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21. 发明授权

US06530341B1 Deposition apparatus for manufacturing thin film 有权
标题翻译：用于制造薄膜的沉积装置
公开(公告)号：US06530341B1
公开(公告)日：2003-03-11
申请号：US09257027
申请日：1999-02-25
申请人： Yuzo Kohda , Shotaro Okabe , Masahiro Kanai , Akira Sakai , Tadashi Hori , Tomonori Nishimoto , Takahiro Yajima
发明人： Yuzo Kohda , Shotaro Okabe , Masahiro Kanai , Akira Sakai , Tadashi Hori , Tomonori Nishimoto , Takahiro Yajima
IPC分类号： H05H100
CPC分类号： H01J37/32009 , H01J37/32082 , H01J37/32541 , H01J37/3277 , H01L31/202 , H01L31/204 , H01L31/206 , Y02E10/50 , Y02P70/521
摘要： A deposition apparatus of the present invention is arranged so that a surface area of a radio-frequency power applying cathode electrode disposed in a glow discharge space, in a space in contact with discharge is greater than a surface area of the whole of a ground electrode (anode electrode) including a beltlike member in the discharge space. This structure can maintain the potential (self-bias) of the cathode electrode disposed in the glow discharge space automatically at a positive potential with respect to the ground (anode) electrode including the beltlike member. As a result, the bias is applied in the direction of irradiation of ions with positive charge to a deposit film on the beltlike member, so that the ions existing in the plasma discharge are accelerated more efficiently toward the beltlike member, thereby effectively giving energy to the surface of deposit film by ion bombardment. Accordingly, since the structural relaxation of film is promoted even at relatively high deposition rates, a microcrystal semiconductor film can be formed at the relatively high deposition rates with good efficiency, with high uniformity, and with good reproducibility.
摘要翻译：本发明的沉积装置被布置成使得设置在辉光放电空间中的与放电接触的空间中的射频施加电极的表面积大于接地电极整体的表面积（阳极电极），其在放电空间中包括带状构件。该结构可以将设置在辉光放电空间中的阴极的电位（自偏压）自动保持在相对于包括结果，将带正电荷的离子的照射方向施加到带状构件上的沉积膜上，使得存在于等离子体放电中的离子更有效地朝向带状构件加速，从而有效地通过离子轰击给沉积膜表面赋予能量。因此，即使在相对高的沉积速率下也能促进膜的结构弛豫，可以以较高的沉积速率以高的均匀性和高的再现性形成微晶半导体膜。

22. 发明授权

US06399411B1 Method for forming non-single-crystal semiconductor thin film, and method for producing photovoltaic device 有权
标题翻译：用于形成非单晶半导体薄膜的方法及其制造方法
公开(公告)号：US06399411B1
公开(公告)日：2002-06-04
申请号：US09594563
申请日：2000-06-15
申请人： Tadashi Hori , Shotaro Okabe , Akira Sakai , Yuzo Kohda , Takahiro Yajima
发明人： Tadashi Hori , Shotaro Okabe , Akira Sakai , Yuzo Kohda , Takahiro Yajima
IPC分类号： H01L2100
CPC分类号： C23C16/545 , C23C14/562 , H01L21/0237 , H01L21/0243 , H01L21/02447 , H01L21/0245 , H01L21/02505 , H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L31/075 , H01L31/202 , H01L31/204 , Y02E10/548 , Y02P70/521 , Y10S438/907
摘要： A method for forming a non-single-crystal semiconductor thin film and a photovoltaic device using an apparatus, which has a film deposition chamber with a film-forming space surrounded by a film deposition chamber wall and a belt-like substrate. An external chamber surrounding the deposition chamber wall is provided in the apparatus. While the belt-like substrate is moved in a longitudinal direction, a film-forming gas is introduced through a gas supply device into the film-forming space and microwave energy is radiated from a microwave applicator into the film-forming space to induce a microwave plasma, and thereby form a non-single-crystal semiconductor thin film on a surface of the belt-like substrate. A cooling mechanism and a temperature-increasing mechanism covering a part of an outside surface of the deposition chamber wall provide temperature control.
摘要翻译：一种用于形成非单晶半导体薄膜的方法和使用具有由成膜室壁和带状衬底围成的成膜空间的成膜室的装置的光电器件。在该装置中设置有围绕沉积室壁的外部室。当带状基板沿纵向移动时，成膜气体通过气体供给装置引入成膜空间，并且微波能量从微波施加器辐射到成膜空间中以引起微波等离子体，从而在带状基板的表面上形成非单晶半导体薄膜。覆盖沉积室壁的外表面的一部分的冷却机构和升温机构提供温度控制。

23. 发明授权

US06162988A Photovoltaic element 失效
标题翻译：光伏元件
公开(公告)号：US06162988A
公开(公告)日：2000-12-19
申请号：US923259
申请日：1997-09-04
申请人： Shotaro Okabe , Yasushi Fujioka , Masahiro Kanai , Akira Sakai , Tadashi Sawayama , Yuzo Kohda , Tadashi Hori , Takahiro Yajima
发明人： Shotaro Okabe , Yasushi Fujioka , Masahiro Kanai , Akira Sakai , Tadashi Sawayama , Yuzo Kohda , Tadashi Hori , Takahiro Yajima
IPC分类号： G03G5/08 , C23C16/50 , C23C16/511 , H01L21/205 , H01L31/04 , H01L31/075 , H01L31/076 , H01L31/20 , H01L31/00
CPC分类号： H01L31/076 , H01L31/075 , H01L31/202 , H01L31/204 , H01L31/206 , Y02E10/548 , Y02P70/521
摘要： The photovoltaic element of the present invention is a photovoltaic element comprised of a semiconductor-junctioned element, characterized in that the element includes a first electrically conductive type semiconductor layer, a non-crystalline i type semiconductor layer, a microcrystalline i type semiconductor layer and a microcrystalline second electrically conductive type semiconductor layer and is pin-junctioned, and a method of and an apparatus for manufacturing the same are characterized by efficiently and continuously mass-producing the photovoltaic element having an excellent current-voltage characteristic and excellent photoelectric conversion efficiency. Thereby, there are provided a photovoltaic element in which the junction interface between the non-crystalline i type layer and the microcrystalline electrically conductive type layer has good grating consistency and which has an excellent current-voltage characteristic and excellent photoelectric conversion efficiency, and a method of and an apparatus for continuously mass-producing the same.
摘要翻译：本发明的光电元件是由半导体结合元件构成的光电元件，其特征在于，所述元件包括第一导电型半导体层，非晶i型半导体层，微晶i型半导体层和微结晶第二导电型半导体层，并且是引脚连接的，其制造方法及其制造方法的特征在于有效且连续地批量生产具有优异的电流 - 电压特性和优异的光电转换效率的光电元件。因此，提供了一种光电元件，其中非晶i型层和微晶导电型层之间的结界面具有良好的光栅一致性，并且具有优异的电流 - 电压特性和优异的光电转换效率，以及一种方法以及用于连续批量生产该装置的装置。

24. 发明授权

US6093290A Method of generating a reciprocating plurality of magnetic fluxes on a target 失效
标题翻译：在目标上产生往复运动的多个磁通量的方法
公开(公告)号：US6093290A
公开(公告)日：2000-07-25
申请号：US76238
申请日：1998-05-12
申请人： Hideo Tamura , Yasushi Fujioka , Masahiro Kanai , Akira Sakai
发明人： Hideo Tamura , Yasushi Fujioka , Masahiro Kanai , Akira Sakai
IPC分类号： C23C14/35 , C23C14/56 , H01J37/34 , C23C14/34
CPC分类号： H01J37/3455 , C23C14/35 , C23C14/562 , H01J37/3405
摘要： The sputtering method of the present invention comprises the steps of forming a plurality of tunnel-like magnetic fluxes on a target, forming an electric field between the target and a belt-like substrate, and conveying the belt-like substrate while reciprocating the plurality of tunnel-like magnetic fluxes at least in the direction of conveying the belt-like substrate, wherein the speed v of conveying the substrate, the distance L in the direction of conveying the belt-like substrate between two adjacent points where the magnetic field of the plurality of tunnel-like magnetic fluxes and the electric field cross each other at a right angle, and the period T of the reciprocating motion of the plurality of tunnel-like magnetic fluxes are controlled so as to L/v=(n+1/2)T wherein n is z-1/16
摘要翻译：本发明的溅射方法包括以下步骤：在目标上形成多个隧道状磁通量，在靶和带状基底之间形成电场，并且在传送带状衬底的同时使多个至少在输送带状基板的方向上的隧道状磁通量，其中传送基板的速度v，在传送带状基板的方向上的距离L，两个相邻点之间的磁场多个隧道状磁通和电场以直角彼此交叉，并且多个隧道状磁通的往复运动的周期T被控制为L / v =（n ++ E ，1/2 + EE）T，其中n是z- + E，fra 1/16 + EE

25. 发明授权

US5992949A Hydraulic brake control apparatus 失效
标题翻译：液压制动控制装置
公开(公告)号：US5992949A
公开(公告)日：1999-11-30
申请号：US886378
申请日：1997-07-01
申请人： Kiyoharu Nakamura , Fumiaki Kawahata , Masayasu Ohkubo , Hirohiko Morikawa , Akira Sakai , Akihiro Ohtomo
发明人： Kiyoharu Nakamura , Fumiaki Kawahata , Masayasu Ohkubo , Hirohiko Morikawa , Akira Sakai , Akihiro Ohtomo
IPC分类号： B60T8/32 , B60T8/36 , B60T8/94 , B60T13/68 , B60T17/18 , B60T8/40
CPC分类号： B60T8/4081 , B60T13/686 , B60T17/18 , B60T8/326 , B60T8/3655 , B60T8/94
摘要： A hydraulic brake control apparatus in which a master cylinder supplies a brake fluid pressure responsive to a brake operating force to wheel cylinders through a first valve, includes a first control unit which controls second valves and third valves when a brake fluid pressure supplied to the wheel cylinders by a pressure supplying device is detected to be excessively high under a condition in which the supply of the brake fluid pressure to the wheel cylinders by the master cylinder is inhibited by the first valve, so that the supply of the brake fluid pressure to the wheel cylinders by the pressure supplying device is inhibited by the second valves and a flow of the brake fluid from the wheel cylinders into a reservoir tank is allowed by the third valves. A second control unit controls the third valves and the first valve at a predetermined time after the flow of the brake fluid from the wheel cylinders into the reservoir tank is allowed, so that the flow of the brake fluid from the wheel cylinders into the reservoir tank is inhibited by the third valves and the supply of the brake fluid pressure to the wheel cylinders by the master cylinder is allowed by the first valve.
摘要翻译：一种液压制动控制装置，其中主缸通过第一阀将响应于制动器操作力的制动液压力提供给轮缸，包括当提供给车轮的制动液压力时控制第二阀和第三阀的第一控制单元在通过第一阀阻止通过主缸供给轮缸的制动液压力的供给的条件下，通过压力供给装置的气缸被检测为过高，从而向通过第二阀抑制由压力供给装置的轮缸，并且通过第三阀允许制动流体从轮缸流入储存罐的流动。第二控制单元在允许制动流体从轮缸进入储罐之后的预定时间控制第三阀和第一阀，使得制动流体从轮缸流入储罐被第三阀抑制，并且主缸允许通过主缸向轮缸供应制动流体压力。

26. 发明授权

US5946587A Continuous forming method for functional deposited films 失效
标题翻译：功能沉积膜的连续成型方法
公开(公告)号：US5946587A
公开(公告)日：1999-08-31
申请号：US741352
申请日：1996-10-29
申请人： Yasushi Fujioka , Shotaro Okabe , Masahiro Kanai , Takehito Yoshino , Akira Sakai , Tadashi Hori
发明人： Yasushi Fujioka , Shotaro Okabe , Masahiro Kanai , Takehito Yoshino , Akira Sakai , Tadashi Hori
IPC分类号： C23C14/56 , C23C16/54 , H01L31/20 , C23C16/00
CPC分类号： H01L31/206 , C23C14/562 , C23C14/568 , C23C16/545 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： The present invention aims to provide a continuous forming method and apparatus for functional deposited films having excellent characteristics while preventing any mutual mixture of gases between film forming chambers having different pressures, wherein each of semiconductor layers of desired conduction type is deposited on a strip-like substrate within a plurality of film forming chambers, by plasma CVD, while the strip-like substrate is being moved continuously in a longitudinal direction thereof through the plurality of film forming chambers connected via a gas gate having the structure of introducing a scavenging gas into a slit-like separation passage, characterized in that at least one of the gas gates connecting the i-type layer film forming chamber for forming the semiconductor junction and the n- or p-type layer film forming chamber having higher pressure than the i-type layer film forming chamber has the scavenging gas introducing position disposed on the n- or p-type layer film forming chamber side off the center of the separation chamber of the gas gate.
摘要翻译：本发明的目的在于提供一种具有优异特性的功能性沉积膜的连续成型方法和装置，同时防止在具有不同压力的成膜室之间的气体之间的任何相互混合，其中期望的导电类型的每个半导体层沉积在带状通过等离子体CVD在多个成膜室内的基板，同时带状基板沿着其长度方向连续移动通过多个成膜室，该多个成膜室通过具有引入清除气体的结构的气门连接到狭缝状分离通道，其特征在于，连接形成半导体结的i型层成膜室和n型或p型层成膜室中的至少一个具有比i型层成膜室具有设置在n型或p型层上的清除气体导入位置成膜室一侧离开气门分离室的中心。

27. 发明授权

US5787565A Continuous rolling method 失效
标题翻译：连续轧制法
公开(公告)号：US5787565A
公开(公告)日：1998-08-04
申请号：US677037
申请日：1996-07-08
申请人： Giichi Matsuo , Soichi Aoyama , Akira Sakai
发明人： Giichi Matsuo , Soichi Aoyama , Akira Sakai
IPC分类号： B21B1/00 , B21B1/18 , B21B1/46 , B21B15/00 , B21B45/04 , B21B45/08 , B23K11/04 , B24B5/38
CPC分类号： B24B5/38 , B21B1/466 , B21B15/0085 , B21B45/04 , B21B1/18 , B21B45/08 , Y10T29/49975 , Y10T29/49988 , Y10T29/49991
摘要： Billets 10 which were continuously cast in a continuous casting machine 1 are directly supplied to a joining line 12. Scale on the billets is removed by a de-scaling apparatus 3. Then the rear end of a preceding billet is welded with the front end of a succeeding billet using a travelling flash butt welder 4 to produce a continuous billet. A burr on the welded part 15 is removed by grinders 51-53 in a travelling burr-removing apparatus 5. The continuous billet is heated in an induction heater 6, and then is continuously rolled in a rolling mill line.
摘要翻译：在连续铸造机1中连续铸造的坯料10直接供给到接合线12.通过除垢装置3除去坯料上的鳞片。然后将前一个坯料的后端焊接在使用旅行闪光对焊机4的后续坯料来生产连续坯料。焊接部15上的毛刺在移动式毛刺去除装置5中由研磨机51-53除去。连续坯料在感应加热器6中加热，然后在轧机生产线中连续轧制。

28. 发明授权

US5769963A Photovoltaic device 失效
标题翻译：光伏装置
公开(公告)号：US5769963A
公开(公告)日：1998-06-23
申请号：US697783
申请日：1996-08-30
申请人： Yasushi Fujioka , Shotaro Okabe , Masahiro Kanai , Akira Sakai , Yuzo Koda , Tadashi Hori , Tomonori Nishimoto , Takahiro Yajima
发明人： Yasushi Fujioka , Shotaro Okabe , Masahiro Kanai , Akira Sakai , Yuzo Koda , Tadashi Hori , Tomonori Nishimoto , Takahiro Yajima
IPC分类号： H01L31/0368 , H01L31/075 , H01L31/20 , H01L31/0352
CPC分类号： H01L31/076 , H01L31/03682 , H01L31/075 , H01L31/206 , Y02E10/546 , Y02E10/548 , Y02P70/521
摘要： A photovoltaic device comprises a semiconductor region having at least one set of semiconductor layers comprised of a first semiconductor layer having a first conductivity type, an intrinsic or substantially intrinsic second semiconductor layer, and a third semiconductor layer having a conductivity type opposite to that of the first conductivity type, the layers being formed in this order, and first and second electrodes provided such that the electrodes interpose the semiconductor region; wherein the density of a dopant impurity determining the conductivity type of the first semiconductor layer in a set of semiconductor layers which is in contact with the first electrode is varied so as to be lower on the side of the first electrode, or the grain size of crystals in the first semiconductor layer is varied so as to be smaller on the side of the first electrode. This provides a photovoltaic device that does not exhibit great lowering of characteristics even when short circuits locally occur in the semiconductor layers during long-term service.
摘要翻译：一种光电器件包括具有至少一组半导体层的半导体区域，该组半导体层由具有第一导电类型的第一半导体层，本征的或基本上本征的第二半导体层组成，以及具有与第第一导电类型，这些层依次形成，第一和第二电极设置成使得电极插入半导体区域; 其中确定与第一电极接触的一组半导体层中的第一半导体层的导电类型的掺杂剂杂质的密度在第一电极的侧面变化，或者在第一电极的一侧的晶粒尺寸第一半导体层中的晶体在第一电极侧变化较小。这提供了即使在长期服务期间在半导体层中局部出现短路的情况下也不会出现特性的降低的光电器件。

29. 发明授权

US5593497A Method for forming a deposited film 失效
标题翻译：沉积膜形成方法
公开(公告)号：US5593497A
公开(公告)日：1997-01-14
申请号：US415580
申请日：1995-04-03
申请人： Jinsho Matsuyama , Yutaka Hirai , Masao Ueki , Akira Sakai
发明人： Jinsho Matsuyama , Yutaka Hirai , Masao Ueki , Akira Sakai
IPC分类号： H01L21/205 , C23C16/02 , C23C16/04 , C23C16/24 , C23C16/30 , C23C16/452 , C30B25/00 , C30B25/18 , H01L21/20 , H01L21/31 , H01L21/84 , C30B25/02
CPC分类号： C23C16/04 , C23C16/24 , C23C16/452 , C30B25/18 , H01L21/02381 , H01L21/02488 , H01L21/02532 , H01L21/0262 , H01L21/02642 , H01L21/02647 , F04C2240/603
摘要： A method for forming a deposited film comprises the step of introducing a starting material (A) which is either one of a gaseous starting material for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidative action on said starting material into a film forming space in which a substrate having a material which becomes crystal neclei for a deposited film to be formed or a material capable of forming crystal nuclei selectively scatteringly on its surface is previously arranged to have said starting material (A) adsorbed onto the surface of said substrate to form an adsorbed layer (I) and the step of introducing a starting material (B) which is the other one into said film forming space, thereby causing surface reaction on said adsorption layer (I) to form a crystalline deposited film (I).
摘要翻译：形成沉积膜的方法包括以下步骤：将用于形成沉积膜的气态原料中的任一种原料（A）和具有氧化作用性质的气态卤化氧化剂引入所述起始材料上，预先设置成膜形成空间，其中具有用于形成沉积膜的具有成为晶体的材料的基板或者能够在其表面上选择性地分散形成晶核的材料预先布置成使所述起始材料（A）吸附在表面上的所述衬底以形成吸附层（I）和将另一种原料（B）引入所述成膜空间的步骤，从而在所述吸附层（I）上引起表面反应以形成结晶沉积膜（一世）。

30. 发明授权

US5350680A Cephalosporinase testing agent 失效
标题翻译：头孢菌素试剂
公开(公告)号：US5350680A
公开(公告)日：1994-09-27
申请号：US976993
申请日：1993-02-02
申请人： Matsuhisa Inoue , Akira Sakai
发明人： Matsuhisa Inoue , Akira Sakai
IPC分类号： C12Q1/34 , C12Q1/04 , A61K31/43
CPC分类号： C12Q1/34 , G01N2333/986 , G01N2415/00 , Y10S435/81 , Y10S435/975
摘要： A cephalosporinase testing agent comprising a cephalosporin antibiotic, a penicillinase inhibitor in an amount of 20% by weight or less based on the weight of the cephalosporin-antibiotic, and a pH indicator which may be bromcresol purple is provided. A cephalosporinase producing bacteria can be judged by smearing a sample containing bacteria to be tested on the testing agent and observing the color tone change. According to this agent, cephalosporinase-active penicillinase producing bacteria are judged cephalosporinase-negative owing to the action of the penicillinase inhibitor, which may be clavulanic acid. Therefore, since only cephalosporinase producing bacteria are judged cephalosporinase-positive, this agent enables error free judgment.
摘要翻译： PCT No.PCT / JP91 / 01732 Sec。 371日期：1993年2月2日 102（e）日期1993年2月2日PCT 1991年12月18日PCT PCT。第WO92 / 11386号公报日期：1992年7月9日。包含头孢菌素抗生素，基于头孢菌素 - 抗生素重量的20重量％以下的青霉素酶抑制剂和可以是溴甲酚紫的pH指示剂的头孢菌素试验剂。可以通过在测试剂上涂抹含有待测细菌的样品并观察色调变化来判断产生头孢菌素的细菌。根据该试剂，由于可能是克拉维酸的青霉素酶抑制剂的作用，头孢菌素酶活性青霉素酶产生菌被判定为头孢菌素阴性。因此，由于只有头孢菌素产生菌被判断为头孢菌素阳性，所以该试剂能够进行无错误判断。

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