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21. 发明授权

US07812350B2 Image sensor and method for manufacturing the same 失效
标题翻译：图像传感器及其制造方法
公开(公告)号：US07812350B2
公开(公告)日：2010-10-12
申请号：US11842590
申请日：2007-08-21
申请人： Tae Gyu Kim
发明人： Tae Gyu Kim
IPC分类号： H01L29/04
CPC分类号： H01L27/14643 , H01L27/1463 , H01L27/14634 , H01L27/1469
摘要： An image sensor and a method for manufacturing the same are provided. A photodiode region and transistor region are vertically-integrated to improve the fill factor and resolution of the image sensor. Unit pixels can be isolated by a metal isolation layer arranged between adjacent photodiode areas.
摘要翻译：提供了图像传感器及其制造方法。光电二极管区域和晶体管区域被垂直集成，以改善图像传感器的填充因子和分辨率。可以通过布置在相邻光电二极管区域之间的金属隔离层来隔离单位像素。

22. 发明授权

US07809507B2 Lightning detector using an X-ray detector and an E- or B-field detector 有权
标题翻译：使用X射线探测器和E或B场探测器的雷电探测器
公开(公告)号：US07809507B2
公开(公告)日：2010-10-05
申请号：US11721280
申请日：2005-12-12
申请人： Joseph R. Dwyer , Martin A. Uman , Hamid K. Rassoul , Jason Jerauld , Douglas M. Jordan , Keith J. Rambo , Vladimir A. Rakov
发明人： Joseph R. Dwyer , Martin A. Uman , Hamid K. Rassoul , Jason Jerauld , Douglas M. Jordan , Keith J. Rambo , Vladimir A. Rakov
IPC分类号： G01W1/00
CPC分类号： G01W1/16
摘要： A lightning detection system (100) includes at least one lightning detector (101-103). The said lightning detector (101-103) includes at least one x-ray detector (110) for providing x-ray data responsive to x-rays received, and an electric field or magnetic field detector (115) for providing electric field or magnetic field data responsive to electric field or magnetic field received. At least one signal processor (122) is coupled to the x-ray detector and the electric field or magnetic field detector. The processor (122) determines whether lightning will strike or has struck proximate to the lightning detector(s) (101-103) based on the x-ray data and electric field or magnetic field data, and can provide a strike point indication having an accuracy of generally better than (100) m.
摘要翻译：雷电检测系统（100）包括至少一个雷电探测器（101-103）。所述雷电检测器（101-103）包括至少一个用于提供响应于所接收的x射线的X射线数据的X射线检测器（110），以及用于提供电场或磁场的电场或磁场检测器（115）响应于接收的电场或磁场的场数据。至少一个信号处理器（122）耦合到X射线检测器和电场或磁场检测器。处理器（122）基于X射线数据和电场或磁场数据来确定雷电是否将靠近雷电探测器（101-103）撞击或撞击，并且可以提供具有精度一般优于（100）m。

23. 发明授权

US07807758B2 Chemical defunctionalization of polymeric alkylenedioxyheterocyclics 有权
标题翻译：聚合亚烷基二氧杂环化合物的化学去官能化
公开(公告)号：US07807758B2
公开(公告)日：2010-10-05
申请号：US12158941
申请日：2007-01-25
申请人： John R. Reynolds , Benjamin Dennis Reeves
发明人： John R. Reynolds , Benjamin Dennis Reeves
IPC分类号： C08G73/02
CPC分类号： C08G61/122 , C08G61/124 , C08G61/125 , C08G61/126 , C08G2261/1426 , C08G2261/3223 , C08G2261/80 , H01B1/127 , H01L51/0037
摘要： A method for preparing a defunctionalized alkylenedioxyheterocycle polymer or copolymer involves providing a polycarboxylic acid derivative functionalized alkylenedioxyheterocycle polymer or copolymer and transforming the polymer or copolymer into a defunctionalized alkylenedioxyheterocycle polymer or copolymer which is polyhydroxy, polythiol, polyamino, or polycarboxylic acid functionalized alkylenedioxyheterocycle polymer or copolymer. The monomers, homopolymers and copolymers for use in the method are new compositions of matter. The polymers containing polycarboxylic acid derivative functionalized alkylenedioxyheterocycle units are soluble polymers which are defunctionalized to yield insoluble polyhydroxy, polythiol, polyamino, or polycarboxylic acid functionalized alkylenedioxyheterocycle polymers. These polymers can be cast as films for use as: hole transport layers in organic light emitting diodes; active electrochrome in electrochromic windows, mirrors and displays; field effect transistors, supercapacitors, batteries, photovoltaic cells, and other electronic components; electronic paper; anti-stat conductors; and transparent conductors.
摘要翻译：制备非官能化的亚烷基二氧杂环聚合物或共聚物的方法包括提供多元羧酸衍生物官能化的亚烷基二氧杂环化合物或共聚物，并将聚合物或共聚物转化成功能化的亚烷基二氧杂环化合物或共聚物，其是多羟基，多硫醇，聚氨基或多元羧酸官能化亚烷基二氧杂环化合物或共聚物。用于该方法的单体，均聚物和共聚物是物质的新组合物。含有多元羧酸衍生物官能化亚烷基二氧杂环单元的聚合物是可溶性聚合物，其被去官能化以产生不溶性多羟基，多硫醇，聚氨基或多元羧酸官能化亚烷基二氧杂环聚合物。这些聚合物可以浇铸成膜，用作有机发光二极管中的空穴传输层; 电致变色窗，反光镜和显示屏中的主动电镀; 场效应晶体管，超级电容器，电池，光伏电池等电子部件; 电子纸; 防静电导体; 和透明导体。

24. 发明授权

US07803786B2 Pharmaceutical co-crystal compositions and related methods of use 有权
标题翻译：药用共晶组合物及相关使用方法
公开(公告)号：US07803786B2
公开(公告)日：2010-09-28
申请号：US11629807
申请日：2005-06-16
申请人： Jennifer McMahon , Matthew Peterson , Michael J. Zaworotko , Tanise Shattock , Magali Bourghol Hickey
发明人： Jennifer McMahon , Matthew Peterson , Michael J. Zaworotko , Tanise Shattock , Magali Bourghol Hickey
IPC分类号： A61K31/7028 , A61K31/55 , A61K31/175 , A61K31/4196 , C07D223/18 , C07H19/048 , C07C275/00
CPC分类号： A61K45/06 , A61K9/145 , A61K38/17 , A61K2300/00
摘要： The present invention comprises pharmaceutical compositions comprising a co-crystal of an API and a co-crystal former, and methods of making and using the same.
摘要翻译：本发明包括包含API和共晶体形成剂的共晶体的药物组合物及其制备和使用方法。

25. 发明授权

US07799708B2 Coated fabrics with increased abrasion resistance 有权
标题翻译：涂层织物具有增加的耐磨性
公开(公告)号：US07799708B2
公开(公告)日：2010-09-21
申请号：US11705892
申请日：2007-02-12
申请人： Robert T. Francis , Albert E. Ortega
发明人： Robert T. Francis , Albert E. Ortega
IPC分类号： B32B5/18
CPC分类号： D06M15/643 , D04H3/16 , D06M11/78 , D06M11/83 , D06N3/128 , D06P1/5292 , D06P5/30 , Y10T442/20 , Y10T442/2139 , Y10T442/2213 , Y10T442/2803 , Y10T442/626 , Y10T442/652 , Y10T442/685
摘要： A silicone coating is applied to fabrics to increase the abrasion resistance while enhancing the natural absorbency and breathability. These fabrics can be used for a variety of applications such as components for shoes, inkjet receptive media, automotive air bags, facing for insulation, tapes and other uses.
摘要翻译：将有机硅涂层施加到织物上以提高耐磨性，同时增强天然吸收性和透气性。这些织物可以用于各种应用，例如用于鞋的组件，喷墨接收介质，汽车安全气囊，面向绝缘，带和其它用途。

26. 发明授权

US07799080B2 Spinal disc prosthesis and methods of use 有权
标题翻译：脊柱假体及其使用方法
公开(公告)号：US07799080B2
公开(公告)日：2010-09-21
申请号：US11540620
申请日：2006-09-29
申请人： Keith L. Doty
发明人： Keith L. Doty
IPC分类号： A61F2/44
CPC分类号： A61F2/4425 , A61F2/30742 , A61F2/30744 , A61F2/44 , A61F2/441 , A61F2002/30331 , A61F2002/30492 , A61F2002/30495 , A61F2002/30507 , A61F2002/30563 , A61F2002/30566 , A61F2002/30581 , A61F2002/30601 , A61F2002/3064 , A61F2002/30644 , A61F2002/30649 , A61F2002/30662 , A61F2002/30673 , A61F2002/30685 , A61F2002/30841 , A61F2002/443 , A61F2002/4495 , A61F2220/0025 , A61F2220/0033 , A61F2310/00017 , A61F2310/00023 , A61F2310/00029 , A61F2310/00748
摘要： Spinal disc prosthetic devices are provided having up to six-degrees-of-freedom with three rotational and three translational degrees-of-freedom within the entire workspace of a Functional Spinal Unit (FSU). Certain embodiments of the prosthetic disc mechanisms attach to upper and lower plates anchored between vertebrae of an FSU allowing modularity of the devices. Scaling, conjoined mechanical programmability allow the devices to realize almost any nominal required spinal articulation, from the cervical to lumbar regions.
摘要翻译：在功能性脊柱单位（FSU）的整个工作空间内提供具有高达六度自由度的脊椎椎间盘假体装置，具有三个旋转和三个平移自由度。假体椎间盘机构的某些实施例附接到锚固在FSU的椎骨之间的上板和下板，允许装置的模块化。缩放，结合机械可编程性允许设备实现几乎任何名义上所需的脊髓关节，从颈部到腰部区域。

27. 发明授权

US07795065B2 Image sensor and manufacturing method thereof 失效
公开(公告)号：US07795065B2
公开(公告)日：2010-09-14
申请号：US12689598
申请日：2010-01-19
申请人： Joon Hwang
发明人： Joon Hwang
IPC分类号： H01L21/00
CPC分类号： H01L27/14687 , H01L27/14609 , H01L27/14621 , H01L27/1463 , H01L27/14632 , H01L27/14634 , H01L27/14636 , H01L27/14643 , H01L27/14692
摘要： Provided is an image sensor. The image sensor can include a first substrate comprising a pixel portion in which a readout circuitry is provided and a peripheral portion in which a peripheral circuitry is provided. An interlayer dielectric including lines can be formed on the first substrate to connect with the readout circuitry and the peripheral circuitry. A crystalline semiconductor layer can be provided on a portion of the interlayer dielectric corresponding to the pixel portion through a bonding process. The crystalline semiconductor layer can include a first photodiode and second photodiode. The first and second photodiodes can be defined by device isolation trenches in the crystalline semiconductor layer. A device isolation layer can be formed on the crystalline semiconductor layer comprising the device isolation trenches. An upper electrode layer passes through the device isolation layer to connect with a portion of the first photodiode. An expose portion can be formed in the upper electrode layer to selectively expose an upper region of the first photodiode. A passivation layer can be formed on the first substrate on which the expose portion is provided.

28. 发明授权

US07790174B2 G-CSF polypeptides and uses thereof 失效
标题翻译： G-CSF多肽及其用途
公开(公告)号：US07790174B2
公开(公告)日：2010-09-07
申请号：US11722527
申请日：2005-12-21
申请人： Catherine Gonthier , Philippe Millasseau
发明人： Catherine Gonthier , Philippe Millasseau
IPC分类号： A61K39/385 , A61K39/00 , C12N5/00 , C12N15/00 , C12P21/06 , A61K38/24 , C07K1/00
CPC分类号： C07K14/535
摘要： The present invention relates to G-CSF polypeptides and their uses, particularly for therapeutic or prophylactic treatment in human subjects. The invention also relates to nucleic acids encoding said polypeptides, vectors comprising such nucleic acids and recombinant cells containing the same. The invention further discloses methods of producing such polypeptides, as well as methods and tools for detecting or dosing these polypeptides in any sample.
摘要翻译：本发明涉及G-CSF多肽及其用途，特别是用于人类受试者的治疗或预防性治疗。本发明还涉及编码所述多肽的核酸，包含该核酸的载体和含有该核酸的重组细胞。本发明进一步公开了生产此类多肽的方法，以及用于在任何样品中检测或给予这些多肽的方法和工具。

29. 发明授权

US07789975B2 Shape memory material and method of making the same 有权
标题翻译：形状记忆材料及制作方法
公开(公告)号：US07789975B2
公开(公告)日：2010-09-07
申请号：US11927816
申请日：2007-10-30
申请人： Man Chee Kenneth Cheung , Kelvin W. K. Yeung , William W. Lu , C. Y. Chung
发明人： Man Chee Kenneth Cheung , Kelvin W. K. Yeung , William W. Lu , C. Y. Chung
IPC分类号： C22C19/03
CPC分类号： A61B17/866 , A61B17/72 , A61B17/80 , A61B17/842 , A61B2017/00867 , C22C19/03 , C22C30/00 , C22F1/006 , Y10T428/12
摘要： The present invention relates generally to a shape memory and/or super-elastic material, such as a nickel titanium alloy. Additionally or alternatively, the present invention relates to a super-elastic or pseudo-elastic material that has an initial transition temperature Af above a body temperature. The shape memory material can have a super-elasticity or pseudo-elasticity property at a temperature below the initial transition temperature Af of the material. For example, the shape memory material can have its workable temperature for producing super-elasticity or pseudo-elasticity of about 0° C. to 15° C. below the initial transition temperature Af. The shape memory material can be malleable at a room temperature, and become super-elastic or pseudo-elastic at a body temperature. In addition, the present invention relates to a method of making a shape memory or a super-elastic material. The treatment protocols can include but not limited to thermo-mechanical, thermo-mechanical, radiation, and ternary alloying treatments.
摘要翻译：本发明一般涉及形状记忆和/或超弹性材料，例如镍钛合金。另外或替代地，本发明涉及具有在体温以上的初始转变温度Af的超弹性或假弹性材料。形状记忆材料可以在低于材料的初始转变温度Af的温度下具有超弹性或假弹性性质。例如，形状记忆材料可以具有用于产生低于初始转变温度Af的约0℃至15℃的超弹性或假弹性的可行温度。形状记忆材料可以在室温下延展，并且在体温下变得超弹性或假弹性。此外，本发明涉及一种制作形状记忆或超弹性材料的方法。处理方案可以包括但不限于热机械，热机械，辐射和三元合金化处理。

30. 发明授权

US07777102B2 Soybean varieties 失效
标题翻译：大豆品种
公开(公告)号：US07777102B2
公开(公告)日：2010-08-17
申请号：US11672632
申请日：2007-02-08
申请人： Vincent R. Pantalone , Fred L. Allen , Deborah Landau-Ellis
发明人： Vincent R. Pantalone , Fred L. Allen , Deborah Landau-Ellis
IPC分类号： A01H1/00 , A01H5/00 , C12N15/82
CPC分类号： A01H5/10
摘要： This application is directed to novel soybean plant varieties, designated 5601TRR-292 (named ‘Allen’), 5601TRR-293, and 5601TRR-379. These varieties are glyphosate resistant cultivars, developed from BC3F2 single-plant derivatives of cultivar ‘5601T’. Also provided herein are seeds of the aforementioned soybean varieties, plants arising therefrom, plant parts of soybean varieties 5601TRR-292, 5601TRR-293, and 5601TRR-379 and to methods for producing a soybean plant produced by crossing these soybean varieties with another soybean plant (as either the male or the female parent). The subject application also provides methods for introducing another transgenic trait or another genetic trait into the disclosed soybean varieties and soybean plants and plant parts produced by those methods. Also disclosed herein are soybean varieties or breeding varieties and plant parts derived from soybean varieties 5601TRR-292, 5601TRR-293, and 5601TRR-379, methods for producing other soybean varieties or plant parts from soybean varieties 5601TRR-292, 5601TRR-293, and 5601TRR-379 soybean plants, varieties, and their parts derived from the practice of such methods. In another aspect, this application provides soybean seeds, plants, and plant parts produced by crossing the soybean varieties 5601TRR-292, 5601TRR-293, and 5601TRR-379 with another soybean variety.
摘要翻译：本申请涉及名为5601TRR-292（名为“Allen”），5601TRR-293和5601TRR-379的新型大豆植物品种。这些品种是草甘膦抗性品种，由BC3F2单株植物衍生品种'5601T'开发。本文还提供了上述大豆品种的种子，由其产生的植物，大豆品种5601TRR-292,5601TRR-293和5601TRR-379的植物部分，以及通过将这些大豆品种与另一大豆植物杂交产生的大豆植物的制备方法（作为男性或女性父母）。本申请还提供了将另一种转基因性状或另一遗传性状引入所公开的大豆品种和通过这些方法生产的大豆植物和植物部分的方法。本文还公开了大豆品种或育种品种以及衍生自大豆品种5601TRR-292,5601TRR-293和5601TRR-379的大豆品种或植物成分，从大豆品种5601TRR-292,561ITRR-293和其他大豆品种生产其它大豆品种或植物成分的方法 5601TRR-379大豆植物，品种及其部分来源于这些方法的实践。另一方面，本申请提供了通过将大豆品种5601TRR-292,5601TRR-293和5601TRR-379与另一大豆品种杂交产生的大豆种子，植物和植物部分。

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