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    • 21. 发明授权
    • Self-oscillation type DC-DC converter having a driving transistor
connected in parallel to a circuit element for starting a switching
element
    • 具有与用于启动开关元件的电路元件并联连接的驱动晶体管的自振荡型DC-DC转换器
    • US5689178A
    • 1997-11-18
    • US680772
    • 1996-07-16
    • Tetsushi Otake
    • Tetsushi Otake
    • H02M3/155H02M3/156G05F1/40G05F1/42G05F1/607
    • H02M3/1563
    • The present invention provides a self-oscillation type DC-DC converter that can perform self-oscillating operation without disposing a feedback winding in a choke coil and realizes the high efficiency, small size and low cost by using a MOSFET as a switching element. The self-oscillation type DC-DC converter comprises a switching transistor Q12 being a P-MOSFET; a first PNP type driving transistor Q2, the collector and emitter of which are connected to the gate and source of the switching transistor Q12, respectively and the base of which is connected to the switching transistor Q12 through a feedback circuit 3; and a second NPN type driving transistor Q3, the gate of the switching transistor Q12 being connected to the ground through the collector and emitter of the second driving transistor Q3 and the base of the second driving transistor Q3 being connected to the feedback circuit 3 through a capacitor C4.
    • 本发明提供了一种自振荡型DC-DC转换器,其可以在不将反馈绕组设置在扼流线圈中的情况下进行自振荡操作,并且通过使用MOSFET作为开关元件来实现高效率,小尺寸和低成本。 自振型DC-DC转换器包括:P-MOSFET的开关晶体管Q12; 第一PNP型驱动晶体管Q2,其集电极和发射极分别连接到开关晶体管Q12的栅极和源极,其基极通过反馈电路3连接到开关晶体管Q12; 和第二NPN型驱动晶体管Q3,开关晶体管Q12的栅极通过第二驱动晶体管Q3的集电极和发射极连接到地,并且第二驱动晶体管Q3的基极通过a连接到反馈电路3 电容器C4。
    • 22. 发明授权
    • Switching power supply
    • 开关电源
    • US5574357A
    • 1996-11-12
    • US337882
    • 1994-11-14
    • Tetsushi OtakeNoriyuki Yoshizawa
    • Tetsushi OtakeNoriyuki Yoshizawa
    • G05F1/565H02M3/158H02M7/217G05F1/10G05F1/613G05F1/652
    • G05F1/565H02M3/1588H02M7/217Y02B70/1466
    • A switching power supply with a high power-conversion-efficiency is obtained by further reducing a loss occurring in a transistor rectifying element. A driving transistor Q3 is arranged between a base of a transistor Q2 as the rectifying element and the ground. A driving signal is inputted from a connection point of the transistor Q2 and a choke coil L1 generating a flyback voltage to the base of the driving transistor Q3, and an ON ad OFF operation of the transistor Q2 is caused to synchronize with an ON ad OFF operation of the switching transistor Q1, thereby preventing a leakage of the current in direction of the base from the collector of the transistor Q2 when it turns off, reducing the loss of the transistor rectifying element and then, improving the power conversion efficiency of the switching power supply.
    • 通过进一步减少在晶体管整流元件中发生的损耗,获得具有高功率转换效率的开关电源。 驱动晶体管Q3配置在作为整流元件的晶体管Q2的基极与地之间。 驱动信号从晶体管Q2的连接点和产生回扫电压的扼流线圈L1输入到驱动晶体管Q3的基极,并且使晶体管Q2的导通截止操作与ON ad OFF同步 开关晶体管Q1的工作,从而防止当晶体管Q2的截止时基极的方向从晶体管Q2的集电极泄漏,减少了晶体管整流元件的损耗,然后提高了开关晶体管Q1的功率转换效率 电源。
    • 23. 发明授权
    • Synchronous rectifying circuit
    • 同步整流电路
    • US5534769A
    • 1996-07-09
    • US245594
    • 1994-05-18
    • Masanori Ishii
    • Masanori Ishii
    • H02M3/155H02M3/158H02M7/217H03K17/0814H02M3/157
    • H03K17/08146H02M3/1588H02M7/217Y02B70/1466
    • A synchronous rectifying circuit for a switching power supply is disclosed which is arranged such that the necessity to provide a diode element in parallel with a rectifying transistor is eliminated so that a highly efficient and stable operation can be achieved. "On" drive signal of a switching transistor (Q1) is detected by a first limiter circuit (6), and a flip-flop circuit (5) causes a rectifying transistor (Q2) to be turned off in response to output of the first limiter circuit (6); turning-off operation of the switching transistor (Q1) is detected by a second limiter circuit (7), and the flip-flop circuit (5) causes the rectifying transistor (Q2) to be turned on in response to output of the second limiter circuit (7). The necessity to provide a diode element in parallel with the rectifying transistor is eliminated. Stable operation can be performed even if the switching element has an indefinite operation delay time. An enhanced efficiency can be achieved.
    • 公开了一种用于开关电源的同步整流电路,其被布置为使得提供与整流晶体管并联的二极管元件的必要性被消除,从而可以实现高效率和稳定的操作。 开关晶体管(Q1)的“开”驱动信号由第一限幅电路(6)检测,触发电路(5)响应于第一限流电路(6)的输出使整流晶体管(Q2)截止 限幅电路(6); 开关晶体管(Q1)的关断动作由第二限幅电路(7)检测,触发电路(5)响应于第二限幅器的输出使整流晶体管(Q2)导通 电路(7)。 消除了与整流晶体管并联提供二极管元件的必要性。 即使开关元件具有不确定的操作延迟时间,也可以进行稳定的动作。 可以提高效率。
    • 24. 发明授权
    • Isolated switching power source
    • 隔离开关电源
    • US5515263A
    • 1996-05-07
    • US396460
    • 1995-02-28
    • Tetushi OtakeNoriyuki Yoshizawa
    • Tetushi OtakeNoriyuki Yoshizawa
    • H02M3/335
    • H02M3/33523Y10S323/902
    • An object of the present invention is to reduce a cost and a power consumption, eliminating a voltage source for generating a reference voltage in an isolated switching power source achieving a feedback from an output side of the power source to a control circuit in an input side of the power source through a photo-coupler. A voltage V.sub.1 obtained by dividing an output voltage V.sub.0 by a voltage dividing resistors 8, 9 is applied to a base of a transistor 11-1 for an error amplifier, and a photo-coupler light emitting element 10-1 is connected between an emitter of the transistor 11-1 and a negative side of an power source output. A forward dropping voltage of the photo-coupler light emitting element becomes approximately constant (approximately 1.1 v) over a variation range of a current flowing to the photo-coupler light emitting element at actually using time. Utilizing such a characteristic, it is possible to cause the photo-coupler 10-1 to have a function generating the reference voltage to be compared with the output voltage V.sub.0 as well as a function achieving a feedback to the control circuit 5 in the input side of the power source.
    • 本发明的目的是降低成本和功耗,消除用于在隔离开关电源中产生参考电压的电压源,从而实现从电源的输出侧到输入侧的控制电路的反馈 的电源通过光耦合器。 通过将输出电压V0除以分压电阻器8,9获得的电压V1被施加到用于误差放大器的晶体管11-1的基极,并且光耦合器发光元件10-1连接在发射极 的晶体管11-1和电源输出的负侧。 光耦合器发光元件的正向下降电压在实际使用时间内流过光耦合器发光元件的电流的变化范围内变得近似恒定(约1.1V)。 利用这种特性,可以使光耦合器10-1具有产生与输出电压V0相比较的参考电压的功能,以及实现对输入侧的控制电路5的反馈的功能 的电源。
    • 26. 发明授权
    • Polar leapfrog filter
    • 极地跨越过滤器
    • US5298813A
    • 1994-03-29
    • US863413
    • 1992-04-03
    • Hiroshi TanigawaIsao FukaiHiroshi KondoTsuneo Tohyama
    • Hiroshi TanigawaIsao FukaiHiroshi KondoTsuneo Tohyama
    • H03H11/12H03H11/04H03F34/04H03F1/34
    • H03H11/0466H03H11/045
    • A polar leapfrog filter includes at least one polar network. The polar network comprises a differentiator constituted by an operational amplifier having input and output terminals, and a first integrator formed by a first capacitor for providing negative feedback to the operational amplifier and a first variable transconductance amplifier; and a second integrator formed by a second capacitor for providing negative feedback to the first integrator, and a second variable transconductance amplifier. A differentiator is provided at each of the input and output portions of the filter, and a third differentiator is provided immediately preceding the output side differentiator. In the case where two or more said polar networks are incorporated, an additional differentiator is provided between the polar networks. The sum of the number of the circuits constituting the differentiators and the number of the polar networks is selected to be even and equal to the order of the filter. The adjacent ones of the circuits are connected in such a manner that leapfrog type negative feedback is effected, and the differentiators except the output side one are constructed in the form of self negative feedback type.
    • 极地跨越式过滤器包括至少一个极性网络。 极性网络包括由具有输入和输出端子的运算放大器构成的微分器和由用于向运算放大器提供负反馈的第一电容器和由第一可变跨导放大器形成的第一积分器; 以及由用于向第一积分器提供负反馈的第二电容器形成的第二积分器和第二可变跨导放大器。 在滤波器的每个输入和输出部分设置微分器,并且紧邻输出侧微分器之前提供第三微分器。 在并入两个或更多个所述极性网络的情况下,在极性网络之间提供附加的微分器。 构成微分器的电路的数量和极性网络的数量之和被选择为均匀且等于滤波器的次序。 相邻的电路以跨越式负反馈的方式连接,除输出侧之外的微分器以自负反馈型的形式构成。
    • 27. 发明授权
    • Polar leapfrog filter
    • 极地跨越过滤器
    • US5296763A
    • 1994-03-22
    • US858010
    • 1992-03-26
    • Hiroshi TanigawaHiroshi KondoIsao FukaiTsuneo Tohyama
    • Hiroshi TanigawaHiroshi KondoIsao FukaiTsuneo Tohyama
    • H03H11/12H03H11/04H03F3/04
    • H03H11/0466H03H11/045
    • A polar leapfrog filter includes at least one polar network. The polar network comprises a differentiator constituted by an operational amplifier having input and output terminals, and a first integrator formed by a first capacitor for providing negative feedback to the operational amplifier and a first variable transconductance amplifier; and a second integrator formed by a second capacitor for providing negative feedback to the first integrator, and a second variable transconductance amplifier. In the case where two or more said polar networks are incorporated, an integrator is provided between adjacent ones of the polar networks. The total number of all the circuits is selected to be odd and equal to the order of the filter. The adjacent ones of the circuits are connected in such a manner that leapfrog type negative feedback is effected.
    • 极地跨越式过滤器包括至少一个极性网络。 极性网络包括由具有输入和输出端子的运算放大器构成的微分器和由用于向运算放大器提供负反馈的第一电容器和由第一可变跨导放大器形成的第一积分器; 以及由用于向第一积分器提供负反馈的第二电容器形成的第二积分器和第二可变跨导放大器。 在并入两个或多个所述极性网络的情况下,在相邻的极性网络之间提供积分器。 所有电路的总数被选择为奇数,并且等于滤波器的顺序。 相邻的电路以跨越式负反馈的方式连接。
    • 28. 发明授权
    • Variable-capacitance diode element having wide capacitance variation
range
    • 具有宽电容变化范围的变容二极管元件
    • US5017950A
    • 1991-05-21
    • US466204
    • 1990-01-17
    • Takeshi Kasahara
    • Takeshi Kasahara
    • H01L29/93
    • H01L29/93
    • A variable-capacitance diode element is disclosed which comprises a semiconductor substrate of a first conductivity type having an epitaxial layer of the first conductvity type provided on a main surface portion thereof, said epitaxial layer having a higher resistivity than that of said semiconductor substrate; a first diffusion layer of the first conductivity type diffused in said epitaxial layer and having a lower resistivity than that of said epitaxial layer; a second diffusion layer of a second conductivity type surrounded by said first diffusion layer and having a lower resistivity than that of said first diffusion layer; and a third diffusion layer of the second conductivity type of a small diffusion length covering an exposed portion of a major surface of said first diffusion layer and an exposed portion of a major surface of said diffusion layer. With such construction, the capacitance variation range of the diode element is widened, and the high-frequency serial resistance R.sub.S is reduced, so that the quality factor Q is enhanced.
    • 公开了一种变容二极管元件,其包括具有第一导电类型的外延层的第一导电类型的半导体衬底,设置在其主表面部分上,所述外延层具有比所述半导体衬底更高的电阻率; 所述第一导电类型的第一扩散层扩散在所述外延层中并且具有比所述外延层的电阻率低的电阻率; 由所述第一扩散层包围并具有比所述第一扩散层低的电阻率的第二导电类型的第二扩散层; 以及覆盖所述第一扩散层的主表面的暴露部分和所述扩散层的主表面的暴露部分的小扩散长度的第二导电类型的第三扩散层。 通过这样的结构,二极管元件的电容变化范围变宽,高频串联电阻RS减小,从而提高品质因数Q。
    • 29. 发明授权
    • Variable capacitance diode element having wide capacitance variation
range
    • 具有宽电容变化范围的可变电容二极管元件
    • US4987459A
    • 1991-01-22
    • US466244
    • 1990-01-17
    • Takeshi Kasahara
    • Takeshi Kasahara
    • H01L29/93
    • H01L29/93Y10S148/004Y10S257/913
    • A variable-capacitance diode element having a wide capacitance variation range is disclosed which comprises an epitaxial layer of a first conductivity type which is provided on a semiconductor substrate of the first conductivity type; a diffusion layer of the first conductivity type which is formed in the epitaxial layer with a higher concentration than said epitaxial layer by means of ion implantation; at least one diffusion layer of a second conductivity type which is formed in the diffusion layer of the first conductivity type so as to define PN junction; and a first-conductivity type buried layer of a low resistivity which is formed the boundary portion between the semiconductor substrate and the epitaxial layer where a depletion layer reaches which occurs in response to a reverse bias voltage being applied to the PN junction, whereby the depletion layer is caused to extend to a maximum possible effect.
    • 公开了具有宽电容变化范围的变容二极管元件,其包括设置在第一导电类型的半导体衬底上的第一导电类型的外延层; 通过离子注入在所述外延层中形成的浓度比所述外延层高的第一导电类型的扩散层; 至少一个第二导电类型的扩散层,其形成在第一导电类型的扩散层中以限定PN结; 以及低电阻率的第一导电型掩埋层,其形成半导体衬底和外延层之间的边界部分,其中耗尽层到达其上,其响应于向PN结施加的反向偏置电压而发生,从而消耗 导致层扩展到最大可能的效果。