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21. 发明授权

US07930058B2 Nanotopography control and optimization using feedback from warp data 有权
标题翻译：使用来自翘曲数据的反馈的纳米形成控制和优化
公开(公告)号：US07930058B2
公开(公告)日：2011-04-19
申请号：US11967743
申请日：2007-12-31
申请人： Sumeet S. Bhagavat , Roland R. Vandamme , Tomomi Komura , Tomohiko Kaneko , Takuto Kazama
发明人： Sumeet S. Bhagavat , Roland R. Vandamme , Tomomi Komura , Tomohiko Kaneko , Takuto Kazama
IPC分类号： G05B13/02 , G06F19/00 , B24B49/00 , B24B51/00 , B24B7/00 , B24B9/00 , B24B5/00 , B24B29/00
CPC分类号： B24B37/28 , B24B7/228 , B24B37/005 , B24B51/00
摘要： Processing a wafer using a double side grinder having a pair of grinding wheels. Warp data is obtained by a warp measurement device for measuring warp of a wafer as ground by the double side grinder. The warp data is received and a nanotopography of the wafer is predicted based on the received warp data. A grinding parameter is determined based on the predicted nanotopography of the wafer. Operation of the double side grinder is adjusted based on the determined grinding parameter.
摘要翻译：使用具有一对砂轮的双面研磨机处理晶片。翘曲数据通过用于通过双面研磨机测量晶片的翘曲的翘曲测量装置获得。接收翘曲数据，并且基于接收的翘曲数据预测晶片的纳米形貌。基于晶片的预测的纳米形貌确定研磨参数。基于确定的研磨参数调整双面研磨机的操作。

22. 发明授权

US07927185B2 Method for assessing workpiece nanotopology using a double side wafer grinder 有权
标题翻译：使用双面晶圆研磨机评估工件纳米拓扑的方法
公开(公告)号：US07927185B2
公开(公告)日：2011-04-19
申请号：US12631929
申请日：2009-12-07
申请人： Roland R. Vandamme , Milind S. Bhagavat
发明人： Roland R. Vandamme , Milind S. Bhagavat
IPC分类号： B24B49/00
CPC分类号： B24B37/28 , B24B7/228 , B24B49/02
摘要： A method of processing a semiconductor wafer using a double side grinder of the type that holds the wafer in a plane with a pair of grinding wheels and a pair of hydrostatic pads. The method includes measuring a distance between the wafer and at least one sensor and determining wafer nanotopology using the measured distance. The determining includes using a processor to perform a finite element structural analysis of the wafer based on the measured distance.
摘要翻译：使用将晶片保持在具有一对砂轮的平面中的类型的双面研磨机和一对静压垫来处理半导体晶片的方法。该方法包括测量晶片与至少一个传感器之间的距离并使用所测量的距离来确定晶片纳米拓扑。确定包括使用处理器基于测量的距离来执行晶片的有限元结构分析。

23. 发明申请

US20100242625A1 SYSTEMS FOR WEIGHING A PULLED OBJECT HAVING A CHANGING WEIGHT 有权
标题翻译：用于称重具有改变重量的被牵引对象的系统
公开(公告)号：US20100242625A1
公开(公告)日：2010-09-30
申请号：US12726973
申请日：2010-03-18
申请人： Harold Korb
发明人： Harold Korb
IPC分类号： G01L5/04
CPC分类号： G01G19/18 , C30B15/28 , G01G23/12
摘要： A system for measuring the weight of an object while pulling the object upward includes a puller having a frame and a cable having a first end coupled to the object and a second end engaging a second cylinder. At least a portion of the cable engages the outer circumferential surface of a first cylinder and the second cylinder. The apparatus also includes an upper arm and an actuator. A force measurement device is coupled to the first cylinder and to the upper arm and measures the weight of the object. The actuator is operable to lower and raise the weight measurement device and the first cylinder. In some embodiments, the position of the cable with respect to the frame may be adjusted by a dampening system or a bushing.
摘要翻译：一种用于在向上拉动物体的同时测量物体的重量的系统包括具有框架的牵引器和具有联接到物体的第一端和与第二缸接合的第二端的电缆。电缆的至少一部分接合第一气缸和第二气缸的外圆周表面。该装置还包括上臂和致动器。力测量装置联接到第一气缸和上臂，并测量物体的重量。致动器可操作以降低和升高重量测量装置和第一气缸。在一些实施例中，电缆相对于框架的位置可以通过阻尼系统或衬套来调节。

24. 发明申请

US20100163462A1 METHODS TO RECOVER AND PURIFY SILICON PARTICLES FROM SAW KERF 有权
标题翻译：从KARF回收和纯化硅颗粒的方法
公开(公告)号：US20100163462A1
公开(公告)日：2010-07-01
申请号：US12647991
申请日：2009-12-28
申请人： Alexis Grabbe , Tracy M. Ragan
发明人： Alexis Grabbe , Tracy M. Ragan
IPC分类号： B03B7/00 , B28D1/06 , B28D5/00
CPC分类号： B03D1/02 , B01D21/0009 , B03C1/288 , B03C2201/20 , B03D1/085 , B08B3/08 , B24B27/06 , B24B55/12 , B28D5/007 , C10M175/005 , C10M175/02 , C10M2203/1006 , C10M2209/1045 , Y02P70/179
摘要： The present disclosure generally relates to methods for recovering silicon from saw kerf, or an exhausted abrasive slurry, resulting from the cutting of a silicon ingot, such as a single crystal or polycrystalline silicon ingot. More particularly, the present disclosure relates to methods for isolating and purifying silicon from saw kerf or the exhausted slurry, such that the resulting silicon may be used as a raw material, such as a solar grade silicon raw material.
摘要翻译：本公开内容一般涉及从切割硅锭（例如单晶或多晶硅锭）而产生的锯切屑或用尽的磨料浆料回收硅的方法。更具体地说，本公开涉及从锯切或排出的浆料中分离和纯化硅的方法，使得所得的硅可以用作原料，例如太阳能级硅原料。

25. 发明授权

US07662023B2 Double side wafer grinder and methods for assessing workpiece nanotopology 失效
标题翻译：双面晶圆研磨机和评估工件纳米拓扑学的方法
公开(公告)号：US07662023B2
公开(公告)日：2010-02-16
申请号：US11617430
申请日：2006-12-28
申请人： Ronald D. Vandamme , Milind S. Bhagavat
发明人： Ronald D. Vandamme , Milind S. Bhagavat
IPC分类号： B24B49/00
CPC分类号： B24B37/28 , B24B7/228 , B24B49/02
摘要： A double side grinder comprises a pair of grinding wheels and a pair of hydrostatic pads operable to hold a flat workpiece (e.g., semiconductor wafer) so that part of the workpiece is positioned between the grinding wheels and part of the workpiece is positioned between the hydrostatic pads. At least one sensor measures a distance between the workpiece and the respective sensor for assessing nanotopology of the workpiece. In a method of the invention, a distance to the workpiece is measured during grinding and used to assess nanotopology of the workpiece. For instance, a finite element structural analysis of the workpiece can be performed using sensor data to derive at least one boundary condition. The nanotopology assessment can begin before the workpiece is removed from the grinder, providing rapid nanotopology feedback. A spatial filter can be used to predict the likely nanotopology of the workpiece after further processing.
摘要翻译：双面研磨机包括一对砂轮和一对静压垫，其可操作以保持平坦工件（例如，半导体晶片），使得工件的一部分位于砂轮之间并且部分工件位于静水压垫至少一个传感器测量工件和相应传感器之间的距离，用于评估工件的纳米拓扑学。在本发明的方法中，在研磨期间测量与工件的距离，并用于评估工件的纳米拓扑学。例如，可以使用传感器数据来执行工件的有限元结构分析以导出至少一个边界条件。纳米技术评估可以在从研磨机上取出工件之前开始，提供快速的纳米拓扑反馈。可以使用空间滤波器来进一步处理后预测工件的可能纳米拓扑。

26. 发明申请

US20100009844A1 CATALYSTS USEFUL IN THE PURIFICATION OF SILICON TETRAFLUORIDE 审中-公开
标题翻译：催化剂用于硅氧烷四氢呋喃的纯化
公开(公告)号：US20100009844A1
公开(公告)日：2010-01-14
申请号：US12563572
申请日：2009-09-21
申请人： Vithal Revankar , Jameel Ibrahim
发明人： Vithal Revankar , Jameel Ibrahim
IPC分类号： B01J21/08 , B01J21/04 , B01J21/06 , B01J23/08 , B01J23/26 , B01J23/28 , B01J21/02 , B01J23/34 , B01J23/75 , B01J23/72 , B01J23/50 , B01J23/00
CPC分类号： B01J37/349 , B01J21/066 , B01J23/8892 , B01J23/94 , C01B33/10784 , Y02C10/04 , Y02P20/584
摘要： Processes for purifying silicon tetrafluoride source gas by subjecting the source gas to one or more purification processes including: contacting the silicon tetrafluoride source gas with an ion exchange resin to remove acidic contaminants, contacting the silicon tetrafluoride source gas with a catalyst to remove carbon monoxide, by removal of carbon dioxide by use of an absorption liquid, and by removal of inert compounds by cryogenic distillation; catalysts suitable for removal of carbon monoxide from silicon tetrafluoride source gas and processes for producing such catalysts.
摘要翻译：用于通过使源气体进行一种或多种纯化方法来纯化四氟化硅源气体的方法，包括：使四氟化硅源气体与离子交换树脂接触以除去酸性污染物，使四氟化硅源气体与催化剂接触以除去一氧化碳，通过使用吸收液除去二氧化碳，并通过低温蒸馏除去惰性化合物; 适用于从四氟化硅源气体中除去一氧化碳的催化剂及其制备方法。

27. 发明申请

US20090324479A1 FLUIDIZED BED REACTOR SYSTEMS AND METHODS FOR REDUCING THE DEPOSITION OF SILICON ON REACTOR WALLS 有权
标题翻译：流化床反应器系统和减少反应器壁上硅沉积的方法
公开(公告)号：US20090324479A1
公开(公告)日：2009-12-31
申请号：US12494006
申请日：2009-06-29
申请人： Milind S. Kulkarni , Puneet Gupta , Balaji Devulapalli , Jameel Ibrahim , Vithal Revankar , Kwasi Foli
发明人： Milind S. Kulkarni , Puneet Gupta , Balaji Devulapalli , Jameel Ibrahim , Vithal Revankar , Kwasi Foli
IPC分类号： C01B33/02 , F27B15/00 , F27B15/09
CPC分类号： B01J8/1818 , B01J8/44 , B01J2219/00252 , C01B33/027
摘要： Gas distribution units of fluidized bed reactors are configured to direct thermally decomposable compounds to the center portion of the reactor and away from the reactor wall to prevent deposition of material on the reactor wall and process for producing polycrystalline silicon product in a reactor that reduce the amount of silicon which deposits on the reactor wall.
摘要翻译：流化床反应器的气体分配单元被配置成将可热分解的化合物引导到反应器的中心部分并远离反应器壁，以防止材料沉积在反应器壁上，并且在反应器中产生多晶硅产物的方法，其减少量硅沉积在反应器壁上。

28. 发明授权

US07611580B2 Controlling melt-solid interface shape of a growing silicon crystal using a variable magnetic field 有权
标题翻译：使用可变磁场控制生长中的硅晶体的熔体 - 固体界面形状
公开(公告)号：US07611580B2
公开(公告)日：2009-11-03
申请号：US11753722
申请日：2007-05-25
申请人： Zheng Lu
发明人： Zheng Lu
IPC分类号： C30B35/00
CPC分类号： C30B29/06 , C30B15/203 , C30B15/22 , C30B15/305 , Y10S117/917 , Y10T117/10 , Y10T117/1032 , Y10T117/1052
摘要： System for controlling crystal growth in a Czochralski crystal growing apparatus. A magnetic field is applied within the crystal growing apparatus and varied to control a shape of the melt-solid interface where the ingot is being pulled from the melt. The shape of the melt-solid interface is formed to a desired shape in response to the varied magnetic field as a function of a length of the ingot.
摘要翻译：用于控制切克拉斯基晶体生长装置中的晶体生长的系统。在晶体生长装置内施加磁场，并且改变以控制熔体 - 固体界面的形状，其中晶锭从熔体中拉出。熔体 - 固体界面的形状响应于作为锭的长度的函数的变化的磁场而形成为期望的形状。

29. 发明申请

US20090252974A1 EPITAXIAL WAFER HAVING A HEAVILY DOPED SUBSTRATE AND PROCESS FOR THE PREPARATION THEREOF 审中-公开
标题翻译：具有重层基底的外延片及其制备方法
公开(公告)号：US20090252974A1
公开(公告)日：2009-10-08
申请号：US12486569
申请日：2009-06-17
申请人： Robert J. Falster , Vladimir V. Voronkov , Luca Moiraghi , DongMyun Lee , Chanrae Cho , Marco Ravani
发明人： Robert J. Falster , Vladimir V. Voronkov , Luca Moiraghi , DongMyun Lee , Chanrae Cho , Marco Ravani
IPC分类号： H01L21/36 , B32B9/04
CPC分类号： H01L21/2205 , H01L21/26506 , H01L21/3225 , Y10T428/249961
摘要： This invention generally relates to a process for suppressing silicon self-interstitial diffusion near the substrate/epitaxial layer interface of an epitaxial silicon wafer having a heavily doped silicon substrate and a lightly doped silicon epitaxial layer. Interstitial diffusion into the epitaxial layer is suppressed by a silicon self-interstitial sink layer comprising dislocation loops.
摘要翻译：本发明总体上涉及一种用于抑制硅掺杂硅衬底和轻掺杂硅外延层的外延硅晶片的衬底/外延层界面附近的硅自间隙扩散的方法。通过包含位错环的硅自间隙沉积层来抑制进入外延层的间隙扩散。

30. 发明申请

US20090246444A1 EDGE ETCHED SILICON WAFERS 有权
标题翻译：边缘蚀刻硅胶
公开(公告)号：US20090246444A1
公开(公告)日：2009-10-01
申请号：US12415555
申请日：2009-03-31
申请人： Henry F. Erk , Peter D. Albrecht , Eugene R. Hollander , Thomas E. Doane , Judith A. Schmidt , Roland R. Vandamme , Guoqiang (David) Zhang
发明人： Henry F. Erk , Peter D. Albrecht , Eugene R. Hollander , Thomas E. Doane , Judith A. Schmidt , Roland R. Vandamme , Guoqiang (David) Zhang
IPC分类号： B32B3/02
CPC分类号： H01L21/02021 , H01L21/02019 , H01L21/30608 , H01L21/67086 , H01L21/67313 , Y10T428/21 , Y10T428/219
摘要： The present disclosure generally relates to the manufacture of silicon wafers, and more particularly to edge etching apparatus and methods for etching the edge of a silicon wafer.
摘要翻译：本公开一般涉及硅晶片的制造，更具体地涉及用于蚀刻硅晶片边缘的边缘蚀刻装置和方法。

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