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211. 发明申请

US20080043797A1 Semiconductor laser device and method for fabricating the same 有权
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US20080043797A1
公开(公告)日：2008-02-21
申请号：US11882173
申请日：2007-07-31
申请人： Toru Takayama , Tomoya Satoh , Koichi Hayakawa , Isao Kidoguchi
发明人： Toru Takayama , Tomoya Satoh , Koichi Hayakawa , Isao Kidoguchi
IPC分类号： H01S5/32 , H01L21/00
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0287 , H01S5/162 , H01S5/2201 , H01S5/221 , H01S5/2218 , H01S5/34326 , H01S5/4087 , H01S2301/18
摘要： A semiconductor laser device includes a red-light-emission portion and an infrared-light-emission portion on a single substrate. The red-light-emission portion has a structure in which an AlGaInP-based active layer is sandwiched by a first cladding layer of a first conductivity type having a striped portion and a second cladding layer of a second conductivity type. The infrared-light-emission portion has a structure in which an AlGaAs-based active layer is sandwiched by a third cladding layer of the first conductivity type having a striped portion and a fourth cladding layer of the second conductivity type. The first, second, third, and fourth cladding layers are all made of an AlGaInP-based material. When in these layers, the Al:Ga contents are represented by X1:1-X1, X2:1-X2, X3:1-X3, and X4:1-X4, respectively, X1≧X2 and X3≧X4 are satisfied.
摘要翻译：半导体激光装置在单个基板上包括红色发光部和红外发光部。红色发光部具有其中AlGaInP基有源层被具有第一导电类型的具有条纹部分的第一包层和第二导电类型的第二包层夹持的结构。红外发光部分具有这样的结构，其中AlGaAs基有源层被具有第一导电类型的第三包层夹在第一导电类型的第三包层中，具有条纹部分和第二导电类型的第四包层。第一，第二，第三和第四覆层均由AlGaInP基材料制成。在这些层中，Al：Ga含量分别由X1：1-X1，X2：1-X2，X3：1-X3和X4：1-X4表示，X1> = X2，X3> = X4分别为满意。

212. 发明授权

US07316947B2 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07316947B2
公开(公告)日：2008-01-08
申请号：US10072931
申请日：2002-02-12
申请人： Shunpei Yamazaki , Osamu Nakamura , Masayuki Kajiwara , Junichi Koezuka , Koji Dairiki , Toru Mitsuki , Toru Takayama , Hideto Ohnuma , Taketomi Asami , Mitsuhiro Ichijo
发明人： Shunpei Yamazaki , Osamu Nakamura , Masayuki Kajiwara , Junichi Koezuka , Koji Dairiki , Toru Mitsuki , Toru Takayama , Hideto Ohnuma , Taketomi Asami , Mitsuhiro Ichijo
IPC分类号： H01L21/00
CPC分类号： H01L29/66757 , G02F1/13454 , H01L27/12 , H01L27/1277 , H01L29/78621 , H01L29/78624 , H01L29/78675 , H01L29/78678
摘要： An object is to reduce the number of high temperature (equal to or greater than 600° C.) heat treatment process steps and achieve lower temperature (equal to or less than 600° C.) processes, and to simplify the process steps and increase throughput in a method of manufacturing a semiconductor device. With the present invention, a barrier layer, a second semiconductor film, and a third semiconductor film containing a noble (rare) gas element are formed on a first semiconductor film having a crystalline structure. Gettering is performed and a metallic element contained in the first semiconductor film passes through the barrier layer and the second semiconductor film by a heat treatment process, and moves to the third semiconductor film. The second semiconductor film and the third semiconductor film are then removed, with the barrier layer used as an etching stopper.
摘要翻译：目的是减少高温（等于或高于600℃）的热处理工艺步骤，达到较低的温度（等于或小于600℃）的工艺，并简化工艺步骤并增加在制造半导体器件的方法中的吞吐量。通过本发明，在具有结晶结构的第一半导体膜上形成有阻挡层，第二半导体膜和含有贵重（稀有）气体元素的第三半导体膜。进行吸气，并且包含在第一半导体膜中的金属元素通过热处理工艺通过阻挡层和第二半导体膜，并移动到第三半导体膜。然后去除第二半导体膜和第三半导体膜，其中阻挡层用作蚀刻停止层。

213. 发明授权

US07303942B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07303942B2
公开(公告)日：2007-12-04
申请号：US10735767
申请日：2003-12-16
申请人： Hideaki Kuwabara , Junya Maruyama , Yumiko Ohno , Toru Takayama , Yuugo Goto , Etsuko Arakawa , Shunpei Yamazaki
发明人： Hideaki Kuwabara , Junya Maruyama , Yumiko Ohno , Toru Takayama , Yuugo Goto , Etsuko Arakawa , Shunpei Yamazaki
IPC分类号： H01L21/44
CPC分类号： H01L21/6835 , H01L21/563 , H01L24/27 , H01L24/29 , H01L24/81 , H01L24/83 , H01L29/0657 , H01L29/66757 , H01L29/78675 , H01L2221/68359 , H01L2221/68368 , H01L2224/0401 , H01L2224/04026 , H01L2224/13111 , H01L2224/13144 , H01L2224/16225 , H01L2224/274 , H01L2224/29101 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/293 , H01L2224/32225 , H01L2224/73204 , H01L2224/81191 , H01L2224/81801 , H01L2224/83192 , H01L2224/838 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/04953 , H01L2924/0665 , H01L2924/0781 , H01L2924/12042 , H01L2924/14 , H01L2924/1517 , H01L2924/15311 , H01L2924/1579 , H01L2924/3511 , H01L2924/00 , H01L2924/00012 , H01L2924/01014 , H01L2924/3512 , H01L2924/00014 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299
摘要： It is an object of the present invention to provide a technique for making a semiconductor device thinner without using a back-grinding method for a silicon wafer. According to the present invention, an integrated circuit film is mounted, thereby making a semiconductor device mounting the integrated circuit film thinner. The term “an integrated circuit film” means a film-like integrated circuit which is manufactured based on an integrated circuit manufactured by a semiconductor film formed over a substrate such as a glass substrate or a quartz substrate. In the present invention, the integrated circuit film is manufactured by a technique for transferring.
摘要翻译：本发明的目的是提供一种使半导体器件更薄而不使用用于硅晶片的后磨法的技术。根据本发明，安装集成电路膜，从而使得安装集成电路膜的半导体器件更薄。术语“集成电路膜”是指基于由诸如玻璃基板或石英基板的基板上形成的半导体膜制成的集成电路制造的膜状集成电路。在本发明中，通过转印技术制造集成电路膜。

214. 发明申请

US20070272989A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20070272989A1
公开(公告)日：2007-11-29
申请号：US11752437
申请日：2007-05-23
申请人： Hideomi Suzawa , Koji Ono , Toru Takayama
发明人： Hideomi Suzawa , Koji Ono , Toru Takayama
IPC分类号： H01L29/78
CPC分类号： H01L29/66757 , H01L27/1214 , H01L27/1259 , H01L27/127 , H01L29/42384 , H01L29/4908 , H01L29/66598 , H01L29/78621 , H01L2029/7863
摘要： In the fabrication of semiconductor devices such as active matrix displays, the need to pattern resist masks in photolithography increases the number of steps in the fabrication process and the time required to complete them and consequently represents a substantial cost. This invention provides a method for forming an impurity region in a semiconductor layer 303 by doping an impurity element into the semiconductor layer self-aligningly using as a mask the upper layer (a second conducting film 306) of a gate electrode formed in two layers. The impurity element is doped into the semiconductor layer through the lower layer of the gate electrode (a first conducting film 305), and through a gate insulating film 304. By this means, an LDD region 313 of a GOLD structure is formed in the semiconductor layer 303.
摘要翻译：在诸如有源矩阵显示器的半导体器件的制造中，在光刻中对抗蚀剂掩模进行图案化的需要增加了制造工艺中的步骤数量和完成它们所需的时间，因此代表了大量成本。本发明提供了一种用于在半导体层中以自对准的方式将杂质元素掺杂到半导体层303中以形成两层栅电极的上层（第二导电膜306）作为掩模来形成杂质区的方法。杂质元素通过栅电极（第一导电膜305）的下层，并通过栅极绝缘膜304掺杂到半导体层中。通过这种方式，在半导体层303中形成GOLD结构的LDD区域313。

215. 发明申请

US20070223550A1 Semiconductor laser device and fabrication method therefor 有权
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US20070223550A1
公开(公告)日：2007-09-27
申请号：US11727229
申请日：2007-03-26
申请人： Yasuhiro Fujimoto , Toru Takayama , Satoshi Murasawa , Hisashi Nakayama , Isao Kidoguchi
发明人： Yasuhiro Fujimoto , Toru Takayama , Satoshi Murasawa , Hisashi Nakayama , Isao Kidoguchi
IPC分类号： H01S5/00
CPC分类号： H01S5/2231 , B82Y20/00 , H01S5/0021 , H01S5/2206 , H01S5/3201 , H01S5/3211 , H01S5/34326 , H01S2301/173
摘要： A semiconductor laser device has a multilayer structure including a first clad layer, an active layer, and a second clad layer stacked successively on a semiconductor substrate in order of increasing distance from the semiconductor substrate. At least one of the first clad layer and the second clad layer has a compressive distortion with respect to the semiconductor substrate. At least one of the first clad layer and the second clad layer includes a semiconductor layer having a tensile distortion with respect to the semiconductor substrate.
摘要翻译：半导体激光器件具有多层结构，其包括依次在半导体衬底上堆叠的第一覆盖层，有源层和第二覆盖层，以便与半导体衬底的距离增加。第一覆盖层和第二覆盖层中的至少一个相对于半导体基板具有压缩变形。第一覆盖层和第二覆盖层中的至少一个包括相对于半导体基板具有拉伸变形的半导体层。

216. 发明申请

US20070211189A1 Peeling method and method for manufacturing display device using the peeling method 有权
标题翻译：使用剥离方法制造显示装置的剥离方法和方法
公开(公告)号：US20070211189A1
公开(公告)日：2007-09-13
申请号：US11797535
申请日：2007-05-04
申请人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno
发明人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yuugo Goto , Yumiko Ohno
IPC分类号： G02F1/136
CPC分类号： H01L27/1218 , H01L21/02175 , H01L21/28008 , H01L21/324 , H01L21/425 , H01L21/707 , H01L21/823487 , H01L27/1214 , H01L27/1266 , H01L27/156 , H01L27/3244 , H01L29/78603 , H01L33/005 , H01L33/0054 , H01L51/003 , H01L51/56 , H01L2221/68368 , H01L2227/326 , H01L2933/0016
摘要： The present invention provides a simplifying method for a peeling process as well as peeling and transcribing to a large-size substrate uniformly. A feature of the present invention is to peel a first adhesive and to cure a second adhesive at the same time in a peeling process, thereby to simplify a manufacturing process. In addition, the present invention is to devise the timing of transcribing a peel-off layer in which up to an electrode of a semiconductor are formed to a predetermined substrate. In particular, a feature is that peeling is performed by using a pressure difference in the case that peeling is performed with a state in which plural semiconductor elements are formed on a large-size substrate.
摘要翻译：本发明提供了一种剥离方法的简化方法以及均匀地剥离和转录到大尺寸基板。本发明的一个特征是剥离第一粘合剂并在剥离过程中同时固化第二粘合剂，从而简化制造过程。另外，本发明是为了将形成半导体的电极的剥离层转印为规定的基板的时机。特别地，特征在于，在大尺寸基板上形成有多个半导体元件的状态下进行剥离的情况下，通过使用压差来进行剥离。

217. 发明授权

US07268487B2 Light-emitting apparatus 有权
标题翻译：发光装置
公开(公告)号：US07268487B2
公开(公告)日：2007-09-11
申请号：US10662357
申请日：2003-09-16
申请人： Shunpei Yamazaki , Toru Takayama , Takuya Tsurume , Yuugo Goto
发明人： Shunpei Yamazaki , Toru Takayama , Takuya Tsurume , Yuugo Goto
IPC分类号： H05B33/12
CPC分类号： H01L51/529 , H01L27/3244 , H01L51/5246 , H01L51/5253
摘要： The present invention is to solve the problems of heat release and a metal material corrosion due to fluorine that are arisen in the case of using a film containing fluoroplastics (Teflon®) as a protective film for a light-emitting device. In the present invention, an inorganic film is formed after forming a light-emitting device, and a film containing fluoroplastics is formed thereon for avoiding contact with a metal material for forming the light-emitting device, as a result, a metal material corrosion due to fluorine in the film containing fluoroplastics can be prevented. In addition, the inorganic insulating film has a function of preventing fluorine in the film containing fluoroplastics from reacting to the metal material (barrier property), in addition, the inorganic insulating film is formed of a material having high heat conductivity for releasing heat generated in a light-emitting device.
摘要翻译：本发明是为了解决在使用含有氟塑料（Teflon）的膜作为发光元件的保护膜的情况下产生的放热和金属材料腐蚀的问题。在本发明中，在形成发光装置之后形成无机膜，并且在其上形成含有氟塑料的膜，以避免与用于形成发光装置的金属材料接触，结果导致金属材料腐蚀可以防止含氟塑料的膜中的氟。此外，无机绝缘膜具有防止含氟塑料的膜与金属材料反应的氟（阻隔性）的功能，另外，无机绝缘膜由具有高导热性的材料形成，用于释放在发光装置。

218. 发明授权

US07257139B2 Semiconductor laser device and optical pickup apparatus using the same 有权
标题翻译：半导体激光器件和使用其的光学拾取器件
公开(公告)号：US07257139B2
公开(公告)日：2007-08-14
申请号：US11038702
申请日：2005-01-20
申请人： Toru Takayama
发明人： Toru Takayama
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , G11B7/123 , H01S5/0071 , H01S5/02248 , H01S5/02292 , H01S5/028 , H01S5/0655 , H01S5/101 , H01S5/1014 , H01S5/2201 , H01S5/2206 , H01S5/2219 , H01S5/2231 , H01S5/34326
摘要： A semiconductor laser device has a striped structure for injecting carriers and includes a first electrically-conductive cladding layer, an active layer, and a second electrically-conductive cladding layer that are formed on a substrate. A width of the stripe changes along a resonator direction, a difference between L1 and Lt is within 200 μm, and Rf
摘要翻译：半导体激光装置具有用于注入载体的条状结构，并且包括形成在基板上的第一导电包覆层，有源层和第二导电覆盖层。条纹的宽度沿着谐振器方向变化，L1和Lt之间的差在200μm以内，Rf

219. 发明申请

US20070178687A1 Method of manufacturing semiconductor device and display device 有权
公开(公告)号：US20070178687A1
公开(公告)日：2007-08-02
申请号：US11724929
申请日：2007-03-16
申请人： Shunpei Yamazaki , Toru Takayama , Tetsuji Yamaguchi
发明人： Shunpei Yamazaki , Toru Takayama , Tetsuji Yamaguchi
IPC分类号： H01L21/44
CPC分类号： G02F1/136227 , G02F1/136286 , G02F2001/136295 , H01L27/1285 , H01L27/1292
摘要： To provide a method of forming a wiring for the purpose of providing a semiconductor device, which is superior in reliability and cost performance. Further, to provide methods of manufacturing a semiconductor device and a display device by using the method of forming the wiring according to the present invention. According to the present invention, when a wiring material and the like is directly patterned on a substrate mainly having an insulating surface by droplet discharging method, a wiring is formed at a position including at least an opening in contact with an underlying portion on an insulating film provided with the opening by dropping a liquid droplet containing a conductive composition by droplet discharging method. By heating the substrate with the wiring formed thereon, a surface of the wiring on the opening and a surface of the wiring other than the wiring on the opening are approximately leveled, and the opening is filled.

220. 发明申请

US20070158745A1 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070158745A1
公开(公告)日：2007-07-12
申请号：US11713606
申请日：2007-03-05
申请人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno
发明人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno
IPC分类号： H01L27/12 , H01L27/01
CPC分类号： H01L27/1218 , H01L23/291 , H01L27/1214 , H01L27/1266 , H01L27/3244 , H01L29/66757 , H01L29/78603 , H01L51/0002 , H01L51/0021 , H01L51/0024 , H01L51/003 , H01L2221/68368 , H01L2924/0002 , Y10S438/928 , Y10S438/982 , H01L2924/00
摘要： (Object) It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled with a small surface area but also a layer to be peeled with a large surface area to be peeled entirely. Further, it is also an object of the present invention to bond a layer to be peeled to various base materials to provide a lighter semiconductor device and a manufacturing method thereof. Particularly, it is an object to bond various elements typified by a TFT, (a thin film diode, a photoelectric conversion element comprising a PIN junction of silicon, or a silicon resistance element) to a flexible film to provide a lighter semiconductor device and a manufacturing method thereof. (Solving Means) When a metal layer 11 is provided over a substrate, an oxide layer 12 is provided in contact with the metal layer 11, a layer to be peeled 13 is formed, and the metal layer 11 is irradiated with a laser beam to perform oxidization and form a metal oxide layer 16, a clear separation is possible with a physical means within the metal oxide layer 12 or at an interface between the metal oxide layer 16 and the oxide layer 12.
摘要翻译：（对象）本发明的目的是提供一种不会对被剥离层造成损害的剥离方法，并且不仅允许以小的表面积剥离层，而且还可以使用剥离层大的表面积要完全剥离。此外，本发明的另一个目的是将要剥离的层粘合到各种基材上以提供更轻的半导体器件及其制造方法。特别地，目的是将由TFT表示的各种元素（薄膜二极管，包含硅的PIN结的光电转换元件或硅电阻元件）粘合到柔性膜上以提供更轻的半导体器件和其制造方法。（解决方案）当在基板上设置金属层11时，设置与金属层11接触的氧化物层12，形成被剥离层13，并且用激光束照射金属层11 进行氧化并形成金属氧化物层16，通过金属氧化物层12内的物理手段或金属氧化物层16与氧化物层12之间的界面，可以进行清晰的分离。

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