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1. 发明授权

US07303942B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07303942B2
公开(公告)日：2007-12-04
申请号：US10735767
申请日：2003-12-16
申请人： Hideaki Kuwabara , Junya Maruyama , Yumiko Ohno , Toru Takayama , Yuugo Goto , Etsuko Arakawa , Shunpei Yamazaki
发明人： Hideaki Kuwabara , Junya Maruyama , Yumiko Ohno , Toru Takayama , Yuugo Goto , Etsuko Arakawa , Shunpei Yamazaki
IPC分类号： H01L21/44
CPC分类号： H01L21/6835 , H01L21/563 , H01L24/27 , H01L24/29 , H01L24/81 , H01L24/83 , H01L29/0657 , H01L29/66757 , H01L29/78675 , H01L2221/68359 , H01L2221/68368 , H01L2224/0401 , H01L2224/04026 , H01L2224/13111 , H01L2224/13144 , H01L2224/16225 , H01L2224/274 , H01L2224/29101 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/293 , H01L2224/32225 , H01L2224/73204 , H01L2224/81191 , H01L2224/81801 , H01L2224/83192 , H01L2224/838 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/04953 , H01L2924/0665 , H01L2924/0781 , H01L2924/12042 , H01L2924/14 , H01L2924/1517 , H01L2924/15311 , H01L2924/1579 , H01L2924/3511 , H01L2924/00 , H01L2924/00012 , H01L2924/01014 , H01L2924/3512 , H01L2924/00014 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299
摘要： It is an object of the present invention to provide a technique for making a semiconductor device thinner without using a back-grinding method for a silicon wafer. According to the present invention, an integrated circuit film is mounted, thereby making a semiconductor device mounting the integrated circuit film thinner. The term “an integrated circuit film” means a film-like integrated circuit which is manufactured based on an integrated circuit manufactured by a semiconductor film formed over a substrate such as a glass substrate or a quartz substrate. In the present invention, the integrated circuit film is manufactured by a technique for transferring.
摘要翻译：本发明的目的是提供一种使半导体器件更薄而不使用用于硅晶片的后磨法的技术。根据本发明，安装集成电路膜，从而使得安装集成电路膜的半导体器件更薄。术语“集成电路膜”是指基于由诸如玻璃基板或石英基板的基板上形成的半导体膜制成的集成电路制造的膜状集成电路。在本发明中，通过转印技术制造集成电路膜。

2. 发明授权

US06872658B2 Method of fabricating semiconductor device by exposing resist mask 失效
标题翻译：通过曝光抗蚀剂掩模制造半导体器件的方法
公开(公告)号：US06872658B2
公开(公告)日：2005-03-29
申请号：US10302693
申请日：2002-11-22
申请人： Etsuko Arakawa , Kiyoshi Kato , Yoshiyuki Kurokawa
发明人： Etsuko Arakawa , Kiyoshi Kato , Yoshiyuki Kurokawa
IPC分类号： H01L21/77 , H01L21/84 , H01L27/12 , H01L29/423 , H01L29/786 , H01L21/44
CPC分类号： H01L29/78621 , H01L27/124 , H01L29/42384 , H01L2029/7863
摘要： A gate metal is formed in a film, the foregoing gate metal is partially etched per each TFT having a different property, and a gate electrode is fabricated. Specifically, a resist mask is fabricated by exposing a resist to light per each TFT having a different property which is required. A gate metal is etched per each TFT having a different property which is required using the foregoing resist mask. At this time, a gate metal covering a semiconductor active layer of a TFT except for the TFT during the time when the patterning of a gate electrode is performed is left as it is covered. The step of fabricating a gate electrode of each TFT may be performed under the conditions optimized in conformity with the required property.
摘要翻译：在薄膜中形成栅极金属，每个具有不同性质的TFT部分地蚀刻上述栅极金属，并且制造栅电极。具体地，通过使每个TFT具有不同性质的抗蚀剂曝光光来制造抗蚀剂掩模。每个TFT蚀刻栅极金属，其具有使用上述抗蚀剂掩模所需的不同性质。此时，在覆盖栅电极的图案形成时的TFT以外的覆盖TFT的半导体有源层的栅极金属被覆盖。可以在根据所需性能优化的条件下进行制造每个TFT的栅电极的步骤。

3. 发明申请

US20080088034A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080088034A1
公开(公告)日：2008-04-17
申请号：US11947835
申请日：2007-11-30
申请人： Hideaki Kuwabara , Junya Maruyama , Yumiko Ohno , Toru Takayama , Yuugo Goto , Etsuko Arakawa , Shunpei Yamazaki
发明人： Hideaki Kuwabara , Junya Maruyama , Yumiko Ohno , Toru Takayama , Yuugo Goto , Etsuko Arakawa , Shunpei Yamazaki
IPC分类号： H01L23/50
CPC分类号： H01L21/6835 , H01L21/563 , H01L24/27 , H01L24/29 , H01L24/81 , H01L24/83 , H01L29/0657 , H01L29/66757 , H01L29/78675 , H01L2221/68359 , H01L2221/68368 , H01L2224/0401 , H01L2224/04026 , H01L2224/13111 , H01L2224/13144 , H01L2224/16225 , H01L2224/274 , H01L2224/29101 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/293 , H01L2224/32225 , H01L2224/73204 , H01L2224/81191 , H01L2224/81801 , H01L2224/83192 , H01L2224/838 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/04953 , H01L2924/0665 , H01L2924/0781 , H01L2924/12042 , H01L2924/14 , H01L2924/1517 , H01L2924/15311 , H01L2924/1579 , H01L2924/3511 , H01L2924/00 , H01L2924/00012 , H01L2924/01014 , H01L2924/3512 , H01L2924/00014 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299
摘要： It is an object of the present invention to provide a technique for making a semiconductor device thinner without using a back-grinding method for a silicon wafer. According to the present invention, an integrated circuit film is mounted, thereby making a semiconductor device mounting the integrated circuit film thinner. The term “an integrated circuit film” means a film-like integrated circuit which is manufactured based on an integrated circuit manufactured by a semiconductor film formed over a substrate such as a glass substrate or a quartz substrate. In the present invention, the integrated circuit film is manufactured by a technique for transferring.
摘要翻译：本发明的目的是提供一种使半导体器件更薄而不使用用于硅晶片的后磨法的技术。根据本发明，安装集成电路膜，从而使得安装集成电路膜的半导体器件更薄。术语“集成电路膜”是指基于由诸如玻璃基板或石英基板的基板上形成的半导体膜制成的集成电路制造的膜状集成电路。在本发明中，通过转印技术制造集成电路膜。

4. 发明授权

US07335593B2 Method of fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07335593B2
公开(公告)日：2008-02-26
申请号：US11088644
申请日：2005-03-24
申请人： Etsuko Arakawa , Kiyoshi Kato , Yoshiyuki Kurokawa
发明人： Etsuko Arakawa , Kiyoshi Kato , Yoshiyuki Kurokawa
IPC分类号： H01L21/44
CPC分类号： H01L29/78621 , H01L27/124 , H01L29/42384 , H01L2029/7863
摘要： A gate metal is formed in a film, the foregoing gate metal is partially etched per each TFT having a different property, and a gate electrode is fabricated. Specifically, a resist mask is fabricated by exposing a resist to light per each TFT having a different property which is required. A gate metal is etched per each TFT having a different property which is required using the foregoing resist mask. At this time, a gate metal covering a semiconductor active layer of a TFT except for the TFT during the time when the patterning of a gate electrode is performed is left as it is covered. The step of fabricating a gate electrode of each TFT may be performed under the conditions optimized in conformity with the required property.
摘要翻译：在薄膜中形成栅极金属，每个具有不同性质的TFT部分地蚀刻上述栅极金属，并且制造栅电极。具体地，通过使每个TFT具有不同性质的抗蚀剂曝光光来制造抗蚀剂掩模。每个TFT蚀刻栅极金属，其具有使用上述抗蚀剂掩模所需的不同性质。此时，在覆盖栅电极的图案形成时的TFT以外的覆盖TFT的半导体有源层的栅极金属被覆盖。可以在根据所需性能优化的条件下进行制造每个TFT的栅电极的步骤。

5. 发明申请

US20050164434A1 Method of fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20050164434A1
公开(公告)日：2005-07-28
申请号：US11088644
申请日：2005-03-24
申请人： Etsuko Arakawa , Kiyoshi Kato , Yoshiyuki Kurokawa
发明人： Etsuko Arakawa , Kiyoshi Kato , Yoshiyuki Kurokawa
IPC分类号： H01L21/77 , H01L21/84 , H01L27/12 , H01L29/423 , H01L29/786 , H01L21/00 , H01L31/036
CPC分类号： H01L29/78621 , H01L27/124 , H01L29/42384 , H01L2029/7863
摘要： A gate metal is formed in a film, the foregoing gate metal is partially etched per each TFT having a different property, and a gate electrode is fabricated. Specifically, a resist mask is fabricated by exposing a resist to light per each TFT having a different property which is required. A gate metal is etched per each TFT having a different property which is required using the foregoing resist mask. At this time, a gate metal covering a semiconductor active layer of a TFT except for the TFT during the time when the patterning of a gate electrode is performed is left as it is covered. The step of fabricating a gate electrode of each TFT may be performed under the conditions optimized in conformity with the required property.
摘要翻译：在薄膜中形成栅极金属，每个具有不同性质的TFT部分地蚀刻上述栅极金属，并且制造栅电极。具体地，通过使每个TFT具有不同性质的抗蚀剂曝光光来制造抗蚀剂掩模。每个TFT蚀刻栅极金属，其具有使用上述抗蚀剂掩模所需的不同性质。此时，在覆盖栅电极的图案形成时的TFT以外的覆盖TFT的半导体有源层的栅极金属被覆盖。可以在根据所需性能优化的条件下进行制造每个TFT的栅电极的步骤。

6. 发明授权

US07564139B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07564139B2
公开(公告)日：2009-07-21
申请号：US11947835
申请日：2007-11-30
申请人： Hideaki Kuwabara , Junya Maruyama , Yumiko Ohno , Toru Takayama , Yuugo Goto , Etsuko Arakawa , Shunpei Yamazaki
发明人： Hideaki Kuwabara , Junya Maruyama , Yumiko Ohno , Toru Takayama , Yuugo Goto , Etsuko Arakawa , Shunpei Yamazaki
IPC分类号： H01L29/40
CPC分类号： H01L21/6835 , H01L21/563 , H01L24/27 , H01L24/29 , H01L24/81 , H01L24/83 , H01L29/0657 , H01L29/66757 , H01L29/78675 , H01L2221/68359 , H01L2221/68368 , H01L2224/0401 , H01L2224/04026 , H01L2224/13111 , H01L2224/13144 , H01L2224/16225 , H01L2224/274 , H01L2224/29101 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/293 , H01L2224/32225 , H01L2224/73204 , H01L2224/81191 , H01L2224/81801 , H01L2224/83192 , H01L2224/838 , H01L2924/00013 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01042 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/04953 , H01L2924/0665 , H01L2924/0781 , H01L2924/12042 , H01L2924/14 , H01L2924/1517 , H01L2924/15311 , H01L2924/1579 , H01L2924/3511 , H01L2924/00 , H01L2924/00012 , H01L2924/01014 , H01L2924/3512 , H01L2924/00014 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299
摘要： It is an object of the present invention to provide a technique for making a semiconductor device thinner without using a back-grinding method for a silicon wafer. According to the present invention, an integrated circuit film is mounted, thereby making a semiconductor device mounting the integrated circuit film thinner. The term “an integrated circuit film” means a film-like integrated circuit which is manufactured based on an integrated circuit manufactured by a semiconductor film formed over a substrate such as a glass substrate or a quartz substrate. In the present invention, the integrated circuit film is manufactured by a technique for transferring.
摘要翻译：本发明的目的是提供一种使半导体器件更薄而不使用用于硅晶片的后磨法的技术。根据本发明，安装集成电路膜，从而使得安装集成电路膜的半导体器件更薄。术语“集成电路膜”是指基于由诸如玻璃基板或石英基板的基板上形成的半导体膜制成的集成电路制造的膜状集成电路。在本发明中，通过转印技术制造集成电路膜。

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