专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US07700061B2 Heat-resistant material for low-melting metal casting machine 有权
标题翻译：低熔点金属铸造机用耐热材料
公开(公告)号：US07700061B2
公开(公告)日：2010-04-20
申请号：US11727646
申请日：2007-03-27
申请人： Akifumi Sakamoto
发明人： Akifumi Sakamoto
IPC分类号： C04B35/03 , C04B35/14 , C04B35/16 , C01B33/24 , C01B33/08
CPC分类号： C04B28/188 , C04B2111/0087 , C04B2111/28 , C04B2201/20 , C04B2201/50 , C04B22/126
摘要： The present invention provides a heat-resistant material for a low-melting metal casting machine, which comprises calcium silicate and a fluoride.
摘要翻译：本发明提供一种低熔点金属铸造机的耐热材料，其包括硅酸钙和氟化物。

12. 发明申请

US20090317317A1 Fluid Storage and Purification Method and System 失效
标题翻译：流体储存和净化方法与系统
公开(公告)号：US20090317317A1
公开(公告)日：2009-12-24
申请号：US12551627
申请日：2009-09-01
申请人： Carrie L. Wyse , Robert Torres, JR. , Joseph V. Vininski
发明人： Carrie L. Wyse , Robert Torres, JR. , Joseph V. Vininski
IPC分类号： B01D19/00 , C01B6/10 , C01B33/08 , C01B25/00 , C01B6/00 , C01B7/07
CPC分类号： F17C11/00 , B01D11/0288 , G06Q99/00 , Y10T137/0318 , Y10T137/0379 , Y10T137/0396
摘要： A method of storing and dispensing a fluid includes providing a vessel configured for selective dispensing of the fluid therefrom. A solvent mixture comprising an ionic liquid and a cosolvent is provided within the vessel. The fluid is contacted with the solvent mixture for take-up of the fluid by the solvent mixture. The fluid is released from the ionic liquid and dispensed from the vessel.
摘要翻译：存储和分配流体的方法包括提供构造用于从其中选择性地分配流体的容器。在容器内提供包含离子液体和助溶剂的溶剂混合物。流体与溶剂混合物接触，以通过溶剂混合物吸收流体。流体从离子液体中释放并从容器中分配。

13. 发明申请

US20090074646A1 ETCHING PROCESSES USED IN MEMS PRODUCTION 审中-公开
公开(公告)号：US20090074646A1
公开(公告)日：2009-03-19
申请号：US12210138
申请日：2008-09-12
申请人： Teruo Sasagawa , Xiaoming Yan
发明人： Teruo Sasagawa , Xiaoming Yan
IPC分类号： C01B21/06 , B44C1/22 , C01B21/083 , C01B33/08 , C01B33/113 , C01B33/00 , C23F1/08
CPC分类号： H01L21/32135 , B01D53/002 , B01D2257/11 , B01D2257/2027 , H01L21/31116
摘要： The efficiency of an etching process may be increased in various ways, and the cost of an etching process may be decreased. Unused etchant may be isolated and recirculated during the etching process. Etching byproducts may be collected and removed from the etching system during the etching process. Components of the etchant may be isolated and used to general additional etchant. Either or both of the etchant or the layers being etched may also be optimized for a particular etching process.

14. 发明申请

US20080241040A1 Nano-scale metal halide scintillation materials and methods for making same 失效
标题翻译：纳米级金属卤化物闪烁材料及其制造方法
公开(公告)号：US20080241040A1
公开(公告)日：2008-10-02
申请号：US11728399
申请日：2007-03-26
申请人： Brent Allen Clothier , Sergio Paulo Martins Loureiro , Alok Srivastava , Venkat Subramaniam Venkataramani
发明人： Brent Allen Clothier , Sergio Paulo Martins Loureiro , Alok Srivastava , Venkat Subramaniam Venkataramani
IPC分类号： C01F17/00 , C01B21/083 , C01B31/00 , C01B33/08 , C01B35/06 , C01B7/00 , C01B9/00 , C01B9/08 , C01D3/02
CPC分类号： C01F17/0056 , B82Y30/00 , C01B9/00 , C01B9/02 , C01B9/04 , C01B9/06 , C01B9/08 , C01D3/00 , C01F11/22 , C01G1/06 , C01G9/08 , C01G11/02 , C01P2004/64 , C09C3/10 , Y10S977/775 , Y10S977/776 , Y10S977/834
摘要： Crystalline scintillator materials comprising nano-scale particles of metal halides are provided. The nano-scale particles are less than 100 nm in size. Methods are provided for preparing the particles. In these methods, ionic liquids are used in place of water to allow precipitation of the final product. In one method, the metal precursors and halide salts are dissolved in separate ionic liquids to form solutions, which are then combined to form the nano-crystalline end product. In the other methods, micro-emulsions are formed using ionic liquids to control particle size.
摘要翻译：提供了包含金属卤化物的纳米级颗粒的结晶闪烁体材料。纳米级颗粒的尺寸小于100nm。提供了制备颗粒的方法。在这些方法中，使用离子液体代替水以允许最终产物沉淀。在一种方法中，将金属前体和卤化物盐溶解在单独的离子液体中以形成溶液，然后将其合并形成纳米晶体终产物。在其他方法中，使用离子液体形成微乳液以控制粒度。

15. 发明授权

US6086838A Removal of silane from gas streams 失效
标题翻译：从气流中除去硅烷
公开(公告)号：US6086838A
公开(公告)日：2000-07-11
申请号：US213661
申请日：1998-12-17
申请人： Vernon E. Morgan
发明人： Vernon E. Morgan
IPC分类号： C01B33/08
CPC分类号： C01B33/08
摘要： Silane is removed from the exhaust gas of silicon CVD reactors by injecting a stoichiometric excess of halogen to produce halosilanes which are hydrolyzed in water. The removal method permits the use of small individual reactors at each CVD reactor site and eliminates the collection and transport of hazardous gases to a central disposal site for destruction.
摘要翻译：通过注入化学计量过量的卤素制备硅水解硅烷，从硅CVD反应器的废气中除去硅烷。拆除方法允许在每个CVD反应器场所使用小型单个反应器，并消除将危险气体收集和运输到中央处置场所进行破坏。

16. 发明授权

US5688477A Process for reacting dissociated zircon with gaseous hydrogen fluoride 失效
标题翻译：使解离的锆石与气态氟化氢反应的方法
公开(公告)号：US5688477A
公开(公告)日：1997-11-18
申请号：US377425
申请日：1995-01-24
申请人： Jonathan Nel
发明人： Jonathan Nel
IPC分类号： C01B33/107 , C01B33/12 , C01G25/02 , C01G25/04 , C01G25/00 , C01B9/08 , C01B11/00 , C01B33/08
CPC分类号： C01G25/02 , C01G25/04 , B01J2219/0894 , C01P2002/88 , C01P2006/80
摘要： A process for treating dissociated zircon comprises reacting dissociated zircon with gaseous hydrogen fluoride at an elevated reaction temperature. The reaction temperature is controlled to obtain at least one desired zirconium-based compound and at least one desired silicon-based compound.
摘要翻译：用于处理解离的锆石的方法包括在升高的反应温度下使解离的锆石与氟化氢气体反应。控制反应温度以获得至少一种所需的锆基化合物和至少一种所需的硅基化合物。

17. 发明授权

US5346682A Process for the preparation of partially-substituted fluorosilane 失效
标题翻译：制备部分取代的氟硅烷的方法
公开(公告)号：US5346682A
公开(公告)日：1994-09-13
申请号：US156702
申请日：1993-11-24
申请人： Makoto Aritsuka , Atsuhisa Mimoto , Isao Harada
发明人： Makoto Aritsuka , Atsuhisa Mimoto , Isao Harada
IPC分类号： C01B33/107 , C01G9/04 , C01B33/08
CPC分类号： C01B33/107 , C01G9/04
摘要： A process is provided by the present invention for the preparation of a partially-substituted fluorosilane represented by the following formula: SiH.sub.n F.sub.4-n wherein n stands for an integer of 1 to 3. The process comprises converting a corresponding partially-substituted chlorosilane represented by the following formula: SiH.sub.n Cl.sub.4-n wherein n has the same meaning as defined above into the partially-substituted fluorosilane by halogen replacement while using a fluorinating agent. The fluorinating agent is zinc fluoride having a water content not higher than 0.2 wt. %. Preferably, the size of crystallites in the direction of a (110) plane of the zinc fluoride is at least 500 .ANG..
摘要翻译：本发明提供了制备由下式表示的部分取代的氟硅烷的方法：SiHnF4-n，其中n表示1至3的整数。该方法包括将相应的部分取代的氟代硅烷代替下式：SiHnCl4-n其中n具有与上述相同的含义，在使用氟化剂时通过卤素取代进行部分取代的氟硅烷。氟化剂是水含量不高于0.2重量％的氟化锌。％。优选地，在氟化锌的（110）面方向上的微晶尺寸为至少500埃。

18. 发明授权

US5252307A Method of processing chlorosilane distillation residues with steam 失效
标题翻译：用蒸汽处理氯硅烷蒸馏残渣的方法
公开(公告)号：US5252307A
公开(公告)日：1993-10-12
申请号：US944367
申请日：1992-09-14
申请人： Klaus Ruff
发明人： Klaus Ruff
IPC分类号： A62D3/35 , A62D101/22 , C01B33/107 , C01B33/08
CPC分类号： A62D3/35 , C01B33/10715 , C01B33/10742 , A62D2101/22
摘要： A method for processing chlorosilane distillation residues by hydrolysis with steam, in which the hydrolysis is carried out at escalating temperatures from about 130.degree. C. to at least 170.degree. C.
摘要翻译：一种通过水蒸气处理氯硅烷蒸馏残余物的方法，其中水解在约130℃至至少170℃的升高温度下进行。

19. 发明授权

US4735784A Method of treating fluoride contaminated wastes 失效
标题翻译：处理氟化物污染废物的方法
公开(公告)号：US4735784A
公开(公告)日：1988-04-05
申请号：US884387
申请日：1986-07-11
申请人： Phillip K. Davis , Vijay K. Kakaria
发明人： Phillip K. Davis , Vijay K. Kakaria
IPC分类号： A62D3/00 , A62D3/20 , A62D3/34 , A62D3/35 , A62D101/22 , A62D101/45 , A62D101/49 , C01B7/19 , C01F7/50 , C03C14/00 , C01F1/00 , C01B33/08 , C04B33/08
CPC分类号： A62D3/20 , C01B7/191 , C01F7/50 , C03C14/00 , A62D2101/45 , A62D2101/49 , A62D2203/10 , C03C2214/14
摘要： A process for treating solid substantially non-volatile wastes contaminated with a heat sensitive contaminant is disclosed. The wastes are heated to form a liquid slag. The liquid slag is held at elevated temperature until at least a portion of the contaminating components have either decomposed or evolved from the melt as a gas. The slag is subjected to cooling and the contaminating compounds are bound or encapsulated into a solid glassy slag. The process is particularly suitable for handling fluoride and cyanide contaminated aluminum smelting wastes such as spent potliner material. It is advantageous to add silica to such wastes. The residue from the slagging reaction is a glassy solid sodium metal silicate matrix such that the fluoride residues remaining in the wastes are encapsulated. The amount of silicate blended with the feed material is selected to substantially tie up all of the sodium remaining in the residue after slag melting and is typically 7.5 to 50 weight percent of the feed. The resulting solid, glassy slag material produced is not hazardous to health and is essentially inert to the environment.
摘要翻译：公开了一种处理受热敏污染物污染的固体基本上非挥发性废物的方法。废物被加热以形成液体渣。液体炉渣保持在升高的温度，直到至少一部分污染成分从熔体中分解或放出为气体。炉渣被冷却，污染的化合物被结合或包封在固体玻璃状炉渣中。该方法特别适用于处理氟化物和氰化物污染的铝冶炼废物，例如废瓷砖材料。向这种废物中加入二氧化硅是有利的。来自成渣反应的残留物是玻璃状固体金属硅酸钠基质，使残留在废物中的氟化物残留物被包封。选择与进料材料混合的硅酸盐的量，以基本上将炉渣熔化后剩余的残余物中的所有钠基团结合，并且通常为进料的7.5至50重量％。产生的固体，玻璃状渣物质对健康无害，对环境基本上是惰性的。

20. 发明授权

US4470959A Continuous production of silicon tetrafluoride gas in a vertical column 失效
标题翻译：在垂直柱中连续生产四氟化硅气体
公开(公告)号：US4470959A
公开(公告)日：1984-09-11
申请号：US505620
申请日：1983-06-20
申请人： Jaidev S. Talwar , James Hendrickson, Jr.
发明人： Jaidev S. Talwar , James Hendrickson, Jr.
IPC分类号： C01B33/107 , C01B33/08
CPC分类号： C01B33/10705
摘要： Silicon tetrafluoride gas is produced by reacting aqueous fluosilicic acid and concentrated sulfuric acid in a vertical column. The fluosilicic acid is fed to an intermediate point of the column and the sulfuric acid to the top of the column. Silicon dioxide, both dissolved and suspended, is fed with fluosilicic acid in some forms so as to produce a by-product acid substantially free of silicon and fluoride values.
摘要翻译：通过在垂直柱中反应水性氟硅酸和浓硫酸来制备四氟化硅气体。将氟硅酸进料到塔的中间点，将硫酸加入塔的顶部。溶解和悬浮的二氧化硅以某种形式加入氟硅酸，以产生基本上不含硅和氟化物值的副产物酸。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式