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11. 发明授权

US06344082B1 Fabrication method of Si nanocrystals 失效
标题翻译： Si纳米晶体的制备方法
公开(公告)号：US06344082B1
公开(公告)日：2002-02-05
申请号：US09342622
申请日：1999-06-29
申请人： Kazuo Furuya , Masaki Takeguchi , Kazuhiro Yoshihara
发明人： Kazuo Furuya , Masaki Takeguchi , Kazuhiro Yoshihara
IPC分类号： C30B102
CPC分类号： B82Y30/00 , B82Y10/00 , C30B1/023 , C30B29/06 , C30B29/605 , Y10S117/905
摘要： Si nanocrystals are formed by irradiating SiO2 substrates with electron beams at a temperature of 400° C. or higher, thereby causing electron-stimulated decomposition reaction. As a result of the said reaction, single crystalline Si nanostructures are fabricated on the SiO2 substrate with good size and positional controllability.
摘要翻译：通过在400℃或更高的温度下用电子束照射SiO 2衬底形成Si纳米晶体，由此引起电子刺激的分解反应。作为所述反应的结果，在SiO 2衬底上制造单晶Si纳米结构，具有良好的尺寸和位置可控性。

12. 发明授权

US06214427B1 Method of making an electronic device having a single crystal substrate formed by solid state crystal conversion 失效
标题翻译：制造具有通过固态晶体转换形成的单晶衬底的电子器件的方法
公开(公告)号：US06214427B1
公开(公告)日：2001-04-10
申请号：US09141711
申请日：1998-08-28
申请人： Lionel Monty Levinson
发明人： Lionel Monty Levinson
IPC分类号： C30B102
CPC分类号： C30B1/02 , C30B29/20 , H01L21/0242 , H01L21/0243 , H01L33/0095 , Y10T428/15
摘要： A method of making an electronic device, according to an exemplary embodiment of the invention, comprises the steps of: forming a polycrystalline substrate in a desired shape; converting the polycrystalline substrate into a single crystal substrate using a solid state crystal conversion process; and forming an electronic element on the substrate. Typically, alumina is formed in the shape of a wafer, sintered to form a densified polycrystalline alumina wafer, and heated to a temperature between the melting point of alumina and one-half the melting point of alumina to convert the densified polycrystalline alumina wafer into a sapphire wafer. A light-emitting diode or other electronic device, such as a laser diode, a high frequency microwave device, or an optoelectronic detector, can be formed on the wafer by depositing layers of semiconductor material on the wafer. The solid state crystal conversion process provides several advantages in forming electronic devices. For example, the cost of the single crystal substrate is significantly reduced since crystal growing from a melt is not required. Also, less processing is required after the crystal is formed, since the precursor polycrystalline substrate can be formed to near net shape. In addition, the polycrystalline substrate can be made in many shapes, in contrast to the shapes possible when growing a crystal from a melt.
摘要翻译：根据本发明的示例性实施例的制造电子设备的方法包括以下步骤：形成期望形状的多晶衬底; 使用固态晶体转换工艺将多晶衬底转换成单晶衬底; 以及在所述基板上形成电子元件。通常，氧化铝形成为晶片形状，烧结形成致密的多晶氧化铝晶片，并加热至氧化铝的熔点和氧化铝熔点的一半之间的温度，以将致密化的多晶氧化铝晶片转化为蓝宝石晶圆通过在晶片上沉积半导体材料层，可以在晶片上形成诸如激光二极管，高频微波器件或光电子检测器之类的发光二极管或其它电子器件。固态晶体转换工艺在形成电子器件方面提供了几个优点。例如，由于不需要从熔体生长的晶体，所以单晶基板的成本显着降低。此外，在形成晶体之后需要较少的加工，因为前体多晶基板可以形成为近净形状。此外，与从熔体生长晶体时可能的形状相反，多晶衬底可以制成许多形状。

13. 发明授权

US06187087B1 Method of bonding a particle material to near theoretical density 有权
公开(公告)号：US06187087B1
公开(公告)日：2001-02-13
申请号：US09412521
申请日：1999-10-05
申请人： Sang H. Yoo , Krupashankara M. Sethuram , Tirumalai S. Sudarshan
发明人： Sang H. Yoo , Krupashankara M. Sethuram , Tirumalai S. Sudarshan
IPC分类号： C30B102
CPC分类号： C04B35/58071 , B01J3/06 , B01J19/087 , B01J2203/0685 , B22F3/093 , B22F3/105 , B22F2999/00 , B32B18/00 , C04B35/52 , C04B35/528 , C04B35/571 , C04B35/58092 , C04B35/581 , C04B35/645 , C04B37/021 , C04B2235/6567 , C04B2237/343 , C04B2237/365 , C04B2237/366 , C04B2237/403 , C04B2237/405 , C04B2237/567
摘要： A method of bonding a particle material to near theoretical density, includes placing a particle material in a die. In the first stage, a pulsed current of about 1 to 20,000 amps., is applied to the particle material for a predetermined time period, and substantially simultaneously therewith, a shear force of about 5-50 MPa is applied. In the second stage, an axial pressure of about less than 1 to 2,000 MPa is applied to the particle material for a predetermined time period, and substantially simultaneously therewith, a steady current of about 1 to 20,000 amps. is applied. The method can be used to bond metallic, ceramic, intermetallic and composite materials to near-net shape, directly from precursors or elemental particle material without the need for synthesizing the material. The method may also be applied to perform combustion synthesis of a reactive material, followed by consolidation or joining to near-net shaped articles or parts. The method may further be applied to repair a damaged or worn substrate or part, coat a particle onto a substrate, and grow single crystals of a particle material.

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