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11. 发明授权

US06656540B2 Method for forming metallic film and apparatus for forming the same 有权
公开(公告)号：US06656540B2
公开(公告)日：2003-12-02
申请号：US09926624
申请日：2001-11-27
申请人： Hitoshi Sakamoto , Toshihiko Nishimori , Saneyuki Goya , Takao Abe , Noriaki Ueda
发明人： Hitoshi Sakamoto , Toshihiko Nishimori , Saneyuki Goya , Takao Abe , Noriaki Ueda
IPC分类号： C23C1608
CPC分类号： C23C16/45565 , C23C16/08 , C23C16/14 , C23C16/4488 , C23C16/452 , C23C16/505 , H01L21/28556
摘要： The present invention provides methods and apparatus for the formation of a thin noble metal film which can achieve a high rate of film growth, can use inexpensive raw materials, and do not allow any impurities to remain in the thin film. Specifically, the present invention relates to a method for the formation of a thin metal film which comprises the steps of feeding a chlorine-containing raw material gas 55 into an inlet vessel 11 having a perforated plate 12 made of Cu; converting the raw material gas 55 into a plasma; etching the perforated plate 12 with the raw material gas plasma to produce a precursor 13 composed of the Cu component contained in the perforated plate 12 and the chlorine contained in the raw material gas 55; converting hydrogen gas into a plasma; after discharging the precursor 13 from the inlet vessel 11, passing the precursor 13 through a rotating magnetic field so as to cause the precursor 13 to travel toward a substrate 15 in an accelerated manner; and passing the precursor 13 through the reducing gas plasma to remove chlorine from the precursor 13 and directing the resulting Cu ions onto the substrate 15 to form a thin Cu film 62 on the substrate 15, as well as an apparatus for carrying out this method.

12. 发明授权

US06616969B2 Apparatus and method for selectively coating internal and external surfaces of an airfoil 失效
标题翻译：用于选择性地涂覆翼型的内表面和外表面的装置和方法
公开(公告)号：US06616969B2
公开(公告)日：2003-09-09
申请号：US09929595
申请日：2001-08-14
申请人： Jeffrey A. Pfaendtner , Joseph D. Rigney , Nripendra N. Das , Ramgopal Darolia
发明人： Jeffrey A. Pfaendtner , Joseph D. Rigney , Nripendra N. Das , Ramgopal Darolia
IPC分类号： C23C1608
CPC分类号： C23C16/042 , C23C16/045 , Y02T50/67
摘要： A gas turbine airfoil has an external surface and an internal passage therethrough. The internal passage is selectively coated by providing a source of a flowable precursor coating material in contact with the internal passage of the airfoil, and providing a coating prevention structure overlying at least a portion of the external surface. The flowable precursor coating material is flowed from the source of the flowable precursor coating material and through the internal passage of the airfoil. The coating prevention structure prevents contact of the flowable precursor coating material with the external surface of the airfoil.
摘要翻译：燃气涡轮机翼型件具有外表面和穿过其的内部通道。通过提供与翼型件的内部通道接触的可流动的前体涂料的源，选择性地涂覆内部通道，并且提供覆盖在外表面的至少一部分上的防涂层结构。可流动的前体涂层材料从可流动的前体涂层材料的源头流过翼型件的内部通道。涂层防止结构防止可流动的前体涂层材料与翼型件的外表面的接触。

13. 发明授权

US06410432B1 CVD of integrated Ta and TaNx films from tantalum halide precursors 失效
标题翻译：来自卤化钽前体的集成Ta和TaNx膜的CVD
公开(公告)号：US06410432B1
公开(公告)日：2002-06-25
申请号：US09300632
申请日：1999-04-27
申请人： John J. Hautala , Johannes F. M. Westendorp
发明人： John J. Hautala , Johannes F. M. Westendorp
IPC分类号： C23C1608
CPC分类号： H01L21/76843 , C23C16/08 , C23C16/34
摘要： A chemical vapor deposition (CVD) method for depositing high quality conformal tantalum/tantalum nitride (Ta/TaNx) bilayer films from inorganic tantalum pentahalide (TaX5) precursors and nitrogen is described. The inorganic tantalum halide precursors are tantalum pentafluoride (TaF5), tantalum pentachloride (TaCl5) and tantalum pentabromide (TaBr5). A TaX5 vapor is delivered into a heated reaction chamber. The vapor is combined with a process gas to deposit a Ta film and a process gas containing nitrogen to deposit a TaNx film on a substrate that is heated to 300° C.-500° C. The deposited Ta/TaNx bilayer film is useful for integrated circuits containing copper films, especially in small high aspect ratio features. The high conformality of these films is superior to films deposited by PVD.
摘要翻译：描述了一种用于从无机钽五卤化物（TaX5）前体和氮沉积高质量保形钽/氮化钽（Ta / TaNx）双层膜的化学气相沉积（CVD）方法。无机卤化钽前体是五氟化钽（TaF5），五氯化钽（TaCl5）和五溴化钽（TaBr5）。将TaX5蒸气输送到加热的反应室中。将蒸气与处理气体结合以沉积Ta膜和含有氮的工艺气体，以将TaNx膜沉积在加热至300℃-500℃的基底上。沉积的Ta / TaNx双层膜可用于包含铜膜的集成电路，特别是在小高宽比特征中。这些膜的高共形性优于PVD沉积的膜。

14. 发明授权

US06180170B2 Device and method for preparing and/or coating the surfaces of hollow construction elements 失效
标题翻译：用于制备和/或涂覆中空构造元件表面的装置和方法
公开(公告)号：US06180170B2
公开(公告)日：2001-01-30
申请号：US09125655
申请日：1998-08-21
申请人： Valentin Grossmann , Horst Pillhoefer , Martin Thoma
发明人： Valentin Grossmann , Horst Pillhoefer , Martin Thoma
IPC分类号： C23C1608
CPC分类号： C23C10/06 , C23C10/48 , Y10S118/10 , Y10S118/11
摘要： In a method for preparing and/or coating the surfaces of metallic hollow structural elements that have at least two connection openings between their outer and inner surfaces, first and second reaction gas mixtures (I, II) are prepared by reaction gas sources for treating the outer and inner surfaces of the hollow structural elements. The first reaction gas mixture (I) is guided over the outer surfaces and thereafter over the inner surfaces of the structural elements, and then the second reaction gas mixture (II) is guided over the inner surfaces and thereafter over the outer surfaces of the structural elements. An apparatus for carrying out the method includes a reaction vessel enclosing an outer reaction space, a central holding pipe arranged in the reaction vessel and enclosing an inner space, and hollow support arms removably attached on the holding pipe to extend radially outwardly therefrom. Each structural element is mounted on a hollow support arm so that one of the connection openings communicates with the inner space through the hollow support arm and the other one of the connection openings communicates with the outer reaction space.
摘要翻译：在用于制备和/或涂覆在其外表面和内表面之间具有至少两个连接开口的金属中空结构元件的表面的方法中，第一和第二反应气体混合物（I，II）由反应气体源制备，用于处理中空结构元件的外表面和内表面。第一反应气体混合物（I）被引导在外表面上，然后在结构元件的内表面上引导，然后第二反应气体混合物（II）被引导到内表面上，然后在结构的外表面上引导元素。用于执行该方法的装置包括：包围外部反应空间的反应容器，布置在反应容器中并包围内部空间的中央保持管，以及可拆卸地附接在保持管上的径向向外延伸的中空支撑臂。每个结构元件安装在中空支撑臂上，使得一个连接开口通过中空支撑臂与内部空间连通，另一个连接开口与外部反应空间连通。

15. 发明授权

US06821889B2 Production of elemental thin films using a boron-containing reducing agent 有权
标题翻译：使用含硼还原剂生产元素薄膜
公开(公告)号：US06821889B2
公开(公告)日：2004-11-23
申请号：US10210715
申请日：2002-07-30
申请人： Kai-Erik Elers , Ville Antero Saanila , Sari Johanna Kaipio , Pekka Juha Soininen
发明人： Kai-Erik Elers , Ville Antero Saanila , Sari Johanna Kaipio , Pekka Juha Soininen
IPC分类号： C23C1608
CPC分类号： C23C16/0272 , C23C16/045 , C23C16/08 , C23C16/14 , C23C16/32 , C23C16/34 , C23C16/44 , C23C16/4401 , C23C16/45525 , C23C16/45527 , C23C16/45542 , C23C16/45553 , C23C16/45555 , C30B25/02 , C30B25/14 , C30B29/02 , C30B29/36 , C30B29/38 , H01L21/28562 , H01L21/28568 , H01L21/76807 , H01L21/76838 , H01L21/76843 , H01L21/76871 , H01L21/76876 , H01L21/76877 , H01L23/5226 , H01L23/53223 , H01L23/53228 , H01L23/53238 , H01L23/53242 , H01L23/53252 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates generally to depositing elemental thin films. In particular, the invention concerns a method of growing elemental metal thin films by Atomic Layer Deposition (ALD) using a boron compound as a reducing agent. In a preferred embodiment the method comprises introducing vapor phase pulses of at least one metal source compound and at least one boron source compound into a reaction space that contains a substrate on which the metal thin film is to be deposited. Preferably the boron compound is capable of reducing the adsorbed portion of the metal source compound into its elemental electrical state.
摘要翻译：本发明一般涉及沉积元素薄膜。特别地，本发明涉及使用硼化合物作为还原剂通过原子层沉积（ALD）生长元素金属薄膜的方法。在优选实施方案中，该方法包括将至少一种金属源化合物和至少一种硼源化合物的气相脉冲引入到其中沉积有金属薄膜的基底的反应空间中。优选地，硼化合物能够将金属源化合物的吸附部分还原成其元电态。

16. 发明授权

US06626186B1 Method for stabilizing the internal surface of a PECVD process chamber 失效
标题翻译：稳定PECVD处理室内表面的方法
公开(公告)号：US06626186B1
公开(公告)日：2003-09-30
申请号：US09713935
申请日：2000-11-16
申请人： Joseph Hillman , Steven Caliendo , Gerrit J. Leusink
发明人： Joseph Hillman , Steven Caliendo , Gerrit J. Leusink
IPC分类号： C23C1608
CPC分类号： C23C16/14 , C23C16/4404
摘要： Apparatus and method of processing a substrate comprises positioning a substrate within a processing space of a processing chamber, and depositing a material layer, such as a titanium-containing layer, onto the substrate using plasma-enhanced chemical vapor deposition. The substrate is then removed from the processing chamber and the processing space is purged. A gas mixture containing oxygen is then introduced into the processing space and the gas mixture is excited with RF energy to form an oxygen-containing plasma. The oxygen-containing plasma is sustained for a predetermined amount of time in the processing space.
摘要翻译：设备和处理衬底的方法包括将衬底定位在处理室的处理空间内，并且使用等离子体增强化学气相沉积将诸如含钛层的材料层沉积到衬底上。然后将基板从处理室移除，并且处理空间被清除。然后将含氧的气体混合物引入处理空间，并用RF能量激发气体混合物以形成含氧等离子体。含氧等离子体在处理空间中维持预定量的时间。

17. 发明授权

US06569496B1 CVD of metals capable of receiving nickel or alloys thereof using inert contact 失效
标题翻译：能够使用惰性接触来接收镍的金属或其合金的CVD
公开(公告)号：US06569496B1
公开(公告)日：2003-05-27
申请号：US09050491
申请日：1998-03-30
申请人： Donald Rene Wall , John Joseph Garant , Kevin Michael Prettyman , Srinivasa S. N. Reddy
发明人： Donald Rene Wall , John Joseph Garant , Kevin Michael Prettyman , Srinivasa S. N. Reddy
IPC分类号： C23C1608
CPC分类号： H01L21/28556 , C23C16/14 , C23C16/44
摘要： The present invention discloses a CVD (Chemical Vapor Deposition) process where nickel or alloys thereof, such as, Ni/Cu, Ni/Co, are deposited on metal surfaces which are capable of receiving nickel or alloys thereof, using an Iodide source, preferably an Iodide salt, such as, Ammonium Iodide or Copper Iodide, with at least one inert stand-off in contact with the receiving metal surface. This invention basically allows the CVD of nickel (Ni) on molybdenum (Mo) or tungsten (W) where the nickel source is physically isolated from the refractory metal surface to be plated using at least one inert material that is in floating contact with the refractory metal surface that needs to be coated with at least one layer of nickel or alloy thereof.
摘要翻译：本发明公开了一种CVD（化学气相沉积）方法，其中镍或其合金，例如Ni / Cu，Ni / Co沉积在能够使用碘化物源，能够接收镍或其合金的金属表面上，优选地碘化物盐，例如碘化铵或碘化铜，至少有一个与接收金属表面接触的惰性隔离物。本发明基本上允许镍（Ni）在钼（Mo）或钨（W）上的CVD，其中镍源与耐火金属表面物理隔离）使用至少一种与耐火材料浮动接触的惰性材料进行电镀需要涂覆至少一层镍或其合金的金属表面。

18. 发明授权

US06565931B1 Corrosion protective coating for a metallic article and a method of applying a corrosion protective coating to a metallic article 有权
标题翻译：用于金属制品的腐蚀保护涂层和将金属制品施加防蚀涂层的方法
公开(公告)号：US06565931B1
公开(公告)日：2003-05-20
申请号：US09690895
申请日：2000-10-18
申请人： David S Rickerby , Richard AB McCall
发明人： David S Rickerby , Richard AB McCall
IPC分类号： C23C1608
CPC分类号： C23C10/52 , C23C26/00 , C23C28/321 , C23C28/324 , C23C28/325 , C23C28/345
摘要： The present invention provides for an etch and mar resistant low VOC clear coating composition most suitable for use as a top clear coat in multi-layered OEM or refinish automotive coatings. The coating composition includes isocyanate, carbonate and melamine components. The isocyanate component includes an aliphatic polyisocyanate. The composition may be formulated as a two-pack or one-pack coating composition, wherein the isocyanate functionalities are blocked with a blocker such as a mono-alcohol.
摘要翻译：本发明提供了最适合用作多层OEM或修补汽车涂料中的顶部透明涂层的耐腐蚀和耐腐蚀的低VOC透明涂层组合物。涂料组合物包括异氰酸酯，碳酸酯和三聚氰胺组分。异氰酸酯组分包括脂族多异氰酸酯。组合物可以配制成双组分或单组分涂料组合物，其中异氰酸酯官能团被封闭剂例如单醇封闭。

19. 发明授权

US06436473B1 Graded reactive element containing aluminide coatings for improved high temperature performance and method for producing 有权
公开(公告)号：US06436473B1
公开(公告)日：2002-08-20
申请号：US09929594
申请日：2001-08-14
申请人： Ramgopal Darolia , Joseph D. Rigney , Joshua L. Miller
发明人： Ramgopal Darolia , Joseph D. Rigney , Joshua L. Miller
IPC分类号： C23C1608
摘要： A diffusion aluminide coating having a graded structure is applied over a nickel base superalloy substrate. The coating has an inner region of a diffusion aluminide adjacent to the substrate rich in a reactive element, typically Hf, Si or combinations of the two. The near surface region is a diffusion aluminide which is substantially free of reactive elements. Such coatings when used as bond coats in thermal barrier coating systems exhibit improved spallation performance.

20. 发明授权

US06413860B1 PECVD of Ta films from tanatalum halide precursors 失效
标题翻译：来自蒽醌卤化物前体的Ta膜的PECVD
公开(公告)号：US06413860B1
公开(公告)日：2002-07-02
申请号：US09300583
申请日：1999-04-27
申请人： John J. Hautala , Johannes F. M. Westendorp
发明人： John J. Hautala , Johannes F. M. Westendorp
IPC分类号： C23C1608
CPC分类号： H01L21/32051 , C23C16/14 , C23C16/4481 , C23C16/52 , H01L21/28556
摘要： A plasma enhanced chemical vapor deposition (PECVD) method for depositing high quality conformal tantalum (Ta) films from inorganic tantalum pentahalide (TaX5) precursors is described. The inorganic tantalum halide precursors are tantalum pentafluoride (TaF5), tantalum pentachloride (TaCl5) and tantalum pentabromide (TaBr5). A TaX5 vapor is delivered into a heated chamber. The vapor is combined with a process gas to deposit a Ta film on a substrate that is heated to 300° C.-500° C. The deposited Ta film is useful for integrated circuits containing copper films, especially in small high aspect ratio features. The high conformality of these films is superior to films deposited by PVD.
摘要翻译：描述了用于从无机钽五卤化物（TaX5）前体沉积高质量保形钽（Ta）膜的等离子体增强化学气相沉积（PECVD）方法。无机卤化钽前体是五氟化钽（TaF5），五氯化钽（TaCl5）和五溴化钽（TaBr5）。将TaX5蒸气输送到加热室中。将蒸气与处理气体结合，以将Ta膜沉积在加热至300℃-500℃的基底上。沉积的Ta膜可用于含有铜膜的集成电路，特别是在小的高纵横比特征中。这些膜的高共形性优于PVD沉积的膜。

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