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11. 发明授权

US09780526B2 Semiconductor-laser-device assembly 有权
公开(公告)号：US09780526B2
公开(公告)日：2017-10-03
申请号：US14933664
申请日：2015-11-05
申请人： Sony Corporation
发明人： Shunsuke Kono , Masaru Kuramoto , Rintaro Koda
IPC分类号： H01S3/098 , H01S5/065 , H01S5/343 , H01S5/50 , H01S5/14 , H01S5/06 , H01S5/40 , H01S3/23 , H01S3/08 , H01S5/00 , H01S5/10 , H01S5/22
CPC分类号： H01S5/0657 , H01S3/08004 , H01S3/08009 , H01S3/2308 , H01S5/0057 , H01S5/0078 , H01S5/0602 , H01S5/065 , H01S5/101 , H01S5/1085 , H01S5/14 , H01S5/141 , H01S5/143 , H01S5/22 , H01S5/343 , H01S5/34333 , H01S5/40 , H01S5/50
摘要： A semiconductor-laser-device assembly includes a mode-locked semiconductor-laser-element assembly including a mode-locked semiconductor laser element, and a dispersion compensation optical system, on which laser light emitted from the mode-locked semiconductor laser element is incident and from which the laser light is emitted; and a semiconductor optical amplifier having a layered structure body including a group III-V nitride-based semiconductor layer, the semiconductor optical amplifier configured to amplify the laser light emitted from the mode-locked semiconductor-laser-element assembly.

12. 发明授权

US09548586B2 Energy integrating device for split semiconductor laser diodes 有权
标题翻译：分体式半导体激光二极管的能量积分装置
公开(公告)号：US09548586B2
公开(公告)日：2017-01-17
申请号：US14775609
申请日：2014-09-19
申请人： Elite Optoelectronics Co., LTD
发明人： Yanlin Wu
IPC分类号： H01S5/022 , G02B6/42 , G02B3/04 , G02B27/10 , G02B27/12 , H01S5/40
CPC分类号： H01S5/02256 , G02B3/04 , G02B6/42 , G02B27/106 , G02B27/123 , H01S5/02 , H01S5/02212 , H01S5/042 , H01S5/40 , H01S5/4012 , H01S5/4025
摘要： An energy integrating device for split semiconductor laser diodes includes: an installing holder, wherein the installing holder has a disc structure with a positioning hole at a center thereof, four module bases for mounting laser modules are symmetrically provided at one side of the disc structure, and the laser modules are embedded inside the module bases; a printed circuit board, connected to the laser modules through sleeves, is mounted at one side of the module bases, and a wire and a plug are mounted on the printed circuit board for connecting a power source; the laser modules are adjusted and positioned through fastening screws, and laser beams thereof are emitted through surface holes of the installing holder with the disc structure; the laser beams from the laser modules are focused onto one laser spot through a positive lens.
摘要翻译：用于分割半导体激光二极管的能量积分装置包括：安装座，其中安装座具有在其中心具有定位孔的盘结构，用于安装激光模块的四个模块基座对称地设置在盘结构的一侧，激光模块嵌入模块底座内; 通过套筒连接到激光模块的印刷电路板安装在模块基座的一侧，并且在印刷电路板上安装电线和插头以连接电源; 激光模块通过紧固螺钉调节和定位，其激光束通过具有盘结构的安装保持器的表面孔发射; 来自激光模块的激光束通过正透镜聚焦到一个激光光斑上。

13. 发明授权

US09257812B2 Laser module, light source device, and method for fabricating laser module 有权
标题翻译：激光模块，光源装置和制造激光模块的方法
公开(公告)号：US09257812B2
公开(公告)日：2016-02-09
申请号：US14427258
申请日：2014-06-17
申请人： CITIZEN HOLDINGS CO., LTD.
发明人： Masafumi Ide , Kaoru Yoda , Shinpei Fukaya
IPC分类号： H01S5/00 , H01S5/026 , H01S5/40 , F21V8/00 , G02B27/01 , H01S5/02
CPC分类号： H01S5/0014 , G02B6/0005 , G02B6/42 , G02B6/4249 , G02B6/4274 , G02B26/00 , G02B27/017 , G02B27/0172 , G02B2027/0178 , G02F1/1335 , G03B21/2033 , G03B33/06 , H01S5/0218 , H01S5/02248 , H01S5/02284 , H01S5/026 , H01S5/0261 , H01S5/40 , H01S5/4012 , H01S5/4025 , H04N9/31 , H04N9/3129 , H05K1/0268 , H05K3/222 , H05K2201/10106
摘要： Provided is a laser module wherein any defective laser device can be isolated by performing burn-in on laser devices mounted on a mounting substrate. The laser module includes laser devices that emit laser light, a driver IC for driving the laser devices, a mounting substrate on which the laser devices and the driver IC are mounted, a common electrode terminal to which a common electrode of the laser devices is connected, individual electrode terminals to which individual electrodes of the laser devices are respectively connected, driver terminals to which the driver IC is connected, and test terminals which are respectively connected to the common electrode terminal and the individual electrode terminals, and to which an external power supply is to be connected when performing burn-in of the laser devices, wherein the number of the laser devices and the number of the test terminals are each larger than the number of the driver terminals.
摘要翻译：提供了一种激光模块，其中可以通过在安装在安装基板上的激光装置上进行老化来隔离任何有缺陷的激光装置。激光模块包括发射激光的激光装置，用于驱动激光装置的驱动器IC，安装有激光装置和驱动器IC的安装基板，激光装置的公共电极连接到的公共电极端子分别连接有激光装置的各个电极的各个电极端子，与驱动器IC连接的驱动端子以及分别与公共电极端子和各个电极端子连接的测试端子，并且外部电源在进行激光装置的老化时，将要连接电源，其中激光装置的数量和测试端子的数量都大于驱动器端子的数量。

14. 发明授权

US08023540B2 Pair of optically locked semiconductor narrow linewidth external cavity lasers with frequency offset tuning 有权
标题翻译：一对光锁定半导体窄线宽外腔激光器与频偏调谐
公开(公告)号：US08023540B2
公开(公告)日：2011-09-20
申请号：US12788235
申请日：2010-05-26
申请人： Vladimir Kupershmidt
发明人： Vladimir Kupershmidt
IPC分类号： H01S3/13
CPC分类号： H01S5/14 , H01S5/0623 , H01S5/40
摘要： An optical phase lock loop (OPLL) system is disclosed that includes a master external cavity laser (ECL), and a substantially identical slave ECL. The master and slave ECLs are fabricated using a planar semiconductor device with waveguide-integrated planar Bragg gratings (PBG). Both the master and slave ECLs have a narrow linewidth and a low frequency-noise. Each of the ECLs has their own controller-modulator circuits for thermal tuning or electrical tuning via direct modulation. A laser-select-logic (LSL) module receives and processes a filtered phase error signal from a loop filter coupled to an electronic PLL device, and directs the processed phase error signal to one or both of the master and slave controller-modulators according to a logical determination of a required mode of operation of the OPLL system in order to achieve a stable and identical phase performance of the master and the slave ECLs. The required mode of operation is chosen from a locking mode, a prediction mode, a tracking mode, and a searching mode.
摘要翻译：公开了一种光锁相环（OPLL）系统，其包括主外腔激光器（ECL）和基本相同的从ECL。主和从ECL是使用具有波导集成平面布拉格光栅（PBG）的平面半导体器件制造的。主从ECL都具有窄线宽和低频噪声。每个ECL都有自己的控制器调制器电路，用于通过直接调制进行热调谐或电调谐。激光选择逻辑（LSL）模块从耦合到电子PLL器件的环路滤波器接收并处理经滤波的相位误差信号，并将经处理的相位误差信号引导至主控制器和从属控制器调制器中的一个或两者，根据逻辑确定OPLL系统的所需操作模式，以实现主和从ECL的稳定和相同的相位性能。从锁定模式，预测模式，跟踪模式和搜索模式中选择所需的操作模式。

15. 发明申请

US20110188532A1 Semiconductor Laser Apparatus 审中-公开
标题翻译：半导体激光设备
公开(公告)号：US20110188532A1
公开(公告)日：2011-08-04
申请号：US13020080
申请日：2011-02-03
申请人： Masayuki HATA , Yasuhiko NOMURA , Yasuyuki BESSHO
发明人： Masayuki HATA , Yasuhiko NOMURA , Yasuyuki BESSHO
IPC分类号： H01S5/40 , H01S5/323
CPC分类号： H01S5/323 , H01S5/40
摘要： This semiconductor laser apparatus includes a first semiconductor laser device having a first surface and a second surface, an integrated laser device formed by a second semiconductor laser device and a third semiconductor laser device having a third surface and a fourth surface, and a support substrate. The third surface is bonded onto a first region of the support substrate, a first section of the first surface overlaps with at least part of the fourth surface, and a second section of the first surface is bonded to a second region of the support substrate.
摘要翻译：该半导体激光装置包括具有第一表面和第二表面的第一半导体激光器件，由第二半导体激光器件形成的集成激光器件和具有第三表面和第四表面的第三半导体激光器件以及支撑衬底。第三表面结合到支撑基板的第一区域上，第一表面的第一部分与第四表面的至少一部分重叠，第一表面的第二部分结合到支撑基板的第二区域。

16. 发明授权

US07965753B2 Monolithic semiconductor laser 有权
标题翻译：单片半导体激光器
公开(公告)号：US07965753B2
公开(公告)日：2011-06-21
申请号：US11990843
申请日：2006-08-23
申请人： Tetsuhiro Tanabe
发明人： Tetsuhiro Tanabe
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , H01S5/323 , H01S5/40
摘要： An infrared element (10a) which includes at least a light emitting layer forming portion (9a) composed of, for example, a first conductivity type cladding layer (2a), an active layer (3a), and a second conductivity type cladding layer (4a) for emitting infrared light, is formed on a semiconductor substrate (1), and a red element (10b) which includes at least a light emitting layer forming portion (9b) composed of, for example, a first conductivity type cladding layer (2b), an active layer (3b), and a second conductivity type cladding layer (4b) for emitting red light, is formed on the same semiconductor substrate (1). And their second conductivity type cladding layers (4a and 4b) are made of the same material. As a result, forming process of their ridge portions may be communized and both of the elements can be formed respectively, with a window structure capable of high output operation.
摘要翻译：至少包括由例如第一导电型包覆层（2a），有源层（3a）和第二导电型包覆层（2a）构成的发光层形成部分（9a）的红外线元件（10a）形成在半导体衬底（1）上的红色光（4a）和至少包括由例如第一导电型包层（...）构成的发光层形成部分（9b）的红色元件（10b） 2b），有源层（3b）和用于发射红光的第二导电型包覆层（4b）形成在同一半导体衬底（1）上。它们的第二导电型包层（4a和4b）由相同的材料制成。结果，可以使其脊部的形成处理被共同化，并且可以通过具有能够高输出操作的窗口结构分别形成两个元件。

17. 发明申请

US20100118902A1 UNITIZED COOLING MODULE FOR LASER DIODE ARRAY 审中-公开
标题翻译：用于激光二极管阵列的独特冷却模块
公开(公告)号：US20100118902A1
公开(公告)日：2010-05-13
申请号：US12346051
申请日：2008-12-30
申请人： Xin-Yi Wu
发明人： Xin-Yi Wu
IPC分类号： H01S3/04
CPC分类号： H01S5/024 , H01S5/02236 , H01S5/02423 , H01S5/40
摘要： The unitized cooling module for a laser diode array of the invention has at least one cooling unit. The cooling unit has an inlet main channel, an outlet main channel, an inlet subchannel, an outlet subchannel and a chamber. The inlet subchannel connects the inlet main channel and the chamber, and the outlet subchannel connects the outlet main channel and the chamber. A heatsink element carrying a laser diode seals the chamber. With a cooling source flowing through the interior of the cooling unit, the heat produced by the laser diode is removed. Thus, the unitized cooling module of the invention is easily assembled, repaired and expanded, and has the effect of pressing fit. Furthermore, the unitized cooling module of the invention can be arranged and designed according to the heat produced by the laser diode to remove the heat from the laser diode, so that the performance of the unitized cooling module is ensured.
摘要翻译：本发明的激光二极管阵列的组合式冷却模块具有至少一个冷却单元。冷却单元具有入口主通道，出口主通道，入口子通道，出口子通道和室。入口子通道连接入口主通道和腔室，出口子通道连接出口主通道和腔室。携带激光二极管的散热元件密封该腔室。当冷却源流过冷却单元的内部时，消除由激光二极管产生的热量。因此，本发明的单元化冷却模块易于组装，修理和扩展，并且具有压配合的效果。此外，本发明的单元化冷却模块可以根据由激光二极管产生的热量来布置和设计，以消除来自激光二极管的热量，从而确保了组合式冷却模块的性能。

18. 发明授权

US07623559B2 Optical device, laser beam source, laser apparatus and method of producing optical device 失效
公开(公告)号：US07623559B2
公开(公告)日：2009-11-24
申请号：US12018485
申请日：2008-01-23
申请人： Kazuhisa Yamamoto , Kiminori Mizuuchi , Yasuo Kitaoka , Makoto Kato
发明人： Kazuhisa Yamamoto , Kiminori Mizuuchi , Yasuo Kitaoka , Makoto Kato
IPC分类号： H01S3/10
CPC分类号： G02F1/37 , G02F1/3558 , G02F1/3775 , G02F2203/60 , H01S3/09415 , H01S3/109 , H01S3/23 , H01S5/0092 , H01S5/02 , H01S5/40 , H01S5/4087
摘要： After forming domain inverted layers 3 in an LiTaO3 substrate 1, an optical waveguide is formed. By performing low-temperature annealing for the optical wavelength conversion element thus formed, a stable proton exchange layer 8 is formed, where an increase in refractive index generated during high-temperature annealing is lowered, thereby providing a stable optical wavelength conversion element. Thus, the phase-matched wavelength becomes constant, and variation in harmonic wave output is eliminated. Consequently, with respect to an optical wavelength conversion element utilizing a non-linear optical effect, a highly reliable element is provided.

19. 发明申请

US20090034569A1 Monolithic semiconductor laser 有权
标题翻译：单片半导体激光器
公开(公告)号：US20090034569A1
公开(公告)日：2009-02-05
申请号：US11990859
申请日：2006-08-23
申请人： Tetsuhiro Tanabe
发明人： Tetsuhiro Tanabe
IPC分类号： H01S5/026 , H01S5/02
CPC分类号： H01S5/22 , H01S5/323 , H01S5/40
摘要： There is disclosed a monolithic semiconductor laser which is provided with an AlGaAs based semiconductor laser element (10a) and an InGaAlP based semiconductor laser element (10b) formed on a semiconductor substrate (1). The AlGaAs based semiconductor laser element (10a) is composed of an infrared light emitting layer forming portion (9a), which has an n-type cladding layer (2a), an active layer (3a) and a p-type cladding layer (4a) formed so as to have a ridge portion, and a current constriction layer (5a) provided on sides of the ridge portion, while the InGaP based semiconductor laser element (10b) is composed of a red light emitting layer forming portion (9a), which has an n-type cladding layer (2b), an active layer (3b) and a p-type cladding layer (4b) formed so as to have a ridge portion, and a current constriction layer (5b) provided on sides of the ridge portion. The current constriction layers of the both elements are made of the same material having a larger band gap than that of the active layer (3b) of the red light emitting layer forming portion. Consequently, there can be obtained a monolithic semiconductor laser capable of high temperature and high output operation without increasing the number of processes of the growth.
摘要翻译：公开了一种单片半导体激光器，其设置有形成在半导体衬底（1）上的基于AlGaAs的半导体激光元件（10a）和基于InGaAlP的半导体激光元件（10b）。基于AlGaAs的半导体激光元件（10a）由具有n型包覆层（2a），有源层（3a）和p型覆层（4a）的红外发光层形成部（9a））形成为具有脊部，以及设置在脊部的侧面的电流收缩层（5a），而InGaP基半导体激光元件（10b）由红色发光层形成部（9a）构成，其具有形成为具有脊部的n型包覆层（2b），有源层（3b）和p型覆盖层（4b），以及设置在该侧壁上的电流收缩层（5b）脊部。两个元件的电流收缩层由具有比红色发光层形成部分的有源层（3b）的带隙大的带隙的相同材料制成。因此，可以获得能够在不增加生长过程的情况下能够进行高温和高输出操作的单片半导体激光器。

20. 发明申请

US20080285610A1 MONOLITHICALLY-PUMPED ERBIUM-DOPED WAVEGUIDE AMPLIFIERS AND LASERS 有权
标题翻译：单相泵浦的ERBIUM-DOPED波导放大器和激光器
公开(公告)号：US20080285610A1
公开(公告)日：2008-11-20
申请号：US12123257
申请日：2008-05-19
申请人： Douglas Hall , Mingjun Huang
发明人： Douglas Hall , Mingjun Huang
IPC分类号： H01S5/026 , H01L33/00
CPC分类号： C03C13/048 , C03C17/23 , C03C25/6286 , C03C2217/228 , C03C2217/242 , C03C2218/32 , H01L21/02178 , H01L21/02233 , H01L21/02255 , H01L21/02321 , H01L21/02351 , H01L21/31155 , H01L21/31666 , H01S3/0632 , H01S3/0941 , H01S3/1608 , H01S3/17 , H01S3/175 , H01S5/026 , H01S5/18308 , H01S5/18358 , H01S5/2004 , H01S5/40 , H01S2301/02
摘要： Disclosed is a method of doping an oxide. The example method includes forming at least one of an AlGaAs oxide or an InAlP oxide on a GaAs substrate, and incorporating Erbium into the at least one AlGaAs oxide or InAlP oxide via ion implantation to form an Erbium-doped oxide layer. The example method also includes annealing the substrate and the at least one AlGaAs oxide or InAlP oxide.
摘要翻译：公开了掺杂氧化物的方法。该示例方法包括在GaAs衬底上形成AlGaAs氧化物或InAlP氧化物中的至少一种，并且通过离子注入将铒掺入到至少一种AlGaAs氧化物或InAlP氧化物中以形成掺铒氧化物层。该示例性方法还包括对衬底和至少一种AlGaAs氧化物或InAlP氧化物进行退火。

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