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1. 发明授权

US08660162B2 Semiconductor laser apparatus and optical apparatus 失效
标题翻译：半导体激光装置及光学装置
公开(公告)号：US08660162B2
公开(公告)日：2014-02-25
申请号：US13189637
申请日：2011-07-25
申请人： Masayuki Hata , Hideki Yoshikawa
发明人： Masayuki Hata , Hideki Yoshikawa
IPC分类号： H01S5/00
CPC分类号： H01S5/4093 , H01L2224/73265 , H01L2924/10155 , H01S5/02236 , H01S5/0224 , H01S5/02256 , H01S5/02276 , H01S5/0683 , H01S5/4031
摘要： In this semiconductor laser apparatus, a first wire-bonding portion is arranged at a position in a fourth direction from a first semiconductor laser device and in a first direction from a photodetector, and a second wire-bonding portion is arranged at a position in the fourth direction from the first semiconductor laser device and in a third direction from the first wire-bonding portion. A third wire-bonding portion is arranged at a position in a second direction from a third semiconductor laser device and in the first direction from the photodetector, and a fourth wire-bonding portion is arranged at a position in the second direction from the third semiconductor laser device and in the third direction from the third wire-bonding portion.
摘要翻译：在该半导体激光装置中，第一引线接合部配置在从第一半导体激光装置向第四方向的位置，在第一方向配置于光检测器，第二引线接合部配置在从第一半导体激光器件的第四方向和从第一引线接合部分的第三方向。第三引线接合部分布置在距离第三半导体激光器件的第二方向的位置处，并且在第一方向上被布置在从光电检测器的第一方向上，并且第四引线接合部分布置在从第三半导体激光装置，并且从第三引线接合部向第三方向。

2. 发明申请

US20120154825A1 LOCATION IDENTIFICATION SENSOR, ELECTRONIC DEVICE, AND DISPLAY DEVICE 审中-公开
标题翻译：位置识别传感器，电子设备和显示设备
公开(公告)号：US20120154825A1
公开(公告)日：2012-06-21
申请号：US13391729
申请日：2010-04-16
申请人： Masayuki Hata , Toshiaki Nakagawa , Toshiyuki Yoshimizu , Yukio Mizuno
发明人： Masayuki Hata , Toshiaki Nakagawa , Toshiyuki Yoshimizu , Yukio Mizuno
IPC分类号： G01B11/14
CPC分类号： G02F1/13318 , G02F1/13338 , G06F3/0416 , G06F3/0418 , G06F3/042
摘要： The present invention provides a location identification sensor (60) capable of identifying a location and moving pattern of an object with correction made in consideration of the moving pattern even if the object is moving. The sensor (60) identifies a location of an object by triangulation principle, and includes at least one pair of light emitting diodes (10a, 10b), line sensors (13), and location identification means for identifying location of an object (50) between the line sensors (13) and the diodes (10) based on the triangulation principle by using first positional information and second positional information, where the first positional information indicates where the object (50) was at a predetermined timing (T2) when the diode (10a) is on, and the second positional information indicates where the object (50) was at two timings (T1 and T3) when the diode (10b) is on, T1 and T3 being before and after T2, respectively.
摘要翻译：本发明提供了一种位置识别传感器（60），即使对象正在移动，能够通过考虑移动图案进行校正来识别对象的位置和移动模式。传感器（60）通过三角测量原理识别物体的位置，并且包括至少一对发光二极管（10a，10b），线传感器（13）和用于识别物体（50）的位置的位置识别装置基于三角测量原理，通过使用第一位置信息和第二位置信息，在线传感器（13）和二极管（10）之间，其中第一位置信息指示物体（50）处于预定定时（T2）的位置，当二极管（10a）导通，第二位置信息分别表示当二极管（10b）接通时，T1和T3分别在T2之前和之后的目标（50）处于两个定时（T1和T3）的位置。

3. 发明申请

US20120033702A1 SEMICONDUCTOR LASER APPARATUS 审中-公开
标题翻译：半导体激光设备
公开(公告)号：US20120033702A1
公开(公告)日：2012-02-09
申请号：US13276004
申请日：2011-10-18
申请人： Yasuyuki BESSHO , Masayuki HATA , Daijiro INOUE
发明人： Yasuyuki BESSHO , Masayuki HATA , Daijiro INOUE
IPC分类号： H01S5/026
CPC分类号： H01S5/4043 , H01L2224/32145 , H01L2224/48091 , H01L2224/73265 , H01S5/02212 , H01S5/02272 , H01S5/02276 , H01S5/4087 , H01L2924/00014
摘要： A p-type pad electrode in a red semiconductor laser device and a first terminal are connected through a wire. A p-type pad electrode in an infrared semiconductor laser device and a second terminal are connected through a wire. A p-electrode in a blue-violet semiconductor laser device and a third terminal are connected through a wire. An n-electrode in the blue-violet semiconductor laser device is electrically conducting to a mount. An n-electrode in the red semiconductor laser device and the mount are connected through a wire, while an n-electrode in the infrared semiconductor laser device and the mount is connected through a wire. The mount has a fourth terminal inside.
摘要翻译：红色半导体激光器件中的p型焊盘电极和第一端子通过导线连接。红外半导体激光器件中的p型焊盘电极和第二端子通过导线连接。蓝紫色半导体激光器件中的p电极和第三端子通过导线连接。蓝紫色半导体激光器件中的n电极对安装件进行导电。红外半导体激光器件中的n电极和安装件通过导线连接，而红外半导体激光器件中的n电极和安装座通过导线连接。安装座内有第四个终端。

4. 发明授权

US08022427B2 Nitride-based semiconductor device and method of manufacturing the same 有权
标题翻译：基于氮化物的半导体器件及其制造方法
公开(公告)号：US08022427B2
公开(公告)日：2011-09-20
申请号：US12429854
申请日：2009-04-24
申请人： Yasuto Miyake , Ryoji Hiroyama , Masayuki Hata , Yasumitsu Kuno
发明人： Yasuto Miyake , Ryoji Hiroyama , Masayuki Hata , Yasumitsu Kuno
IPC分类号： H01L33/00
CPC分类号： H01L29/2003 , B82Y20/00 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L29/812 , H01L33/20 , H01L33/32 , H01L2224/32145 , H01L2224/45144 , H01L2224/48247 , H01L2224/48465 , H01L2224/48471 , H01L2224/73265 , H01S5/0201 , H01S5/02212 , H01S5/02272 , H01S5/02276 , H01S5/0425 , H01S5/22 , H01S5/2201 , H01S5/2214 , H01S5/3202 , H01S5/34333 , H01S2304/12 , H01L2924/00
摘要： A nitride-based semiconductor device includes a substrate, a first step portion formed on a main surface side of a first side end surface of the substrate, a second step portion formed on the main surface side of a second side end surface substantially parallel to the first side end surface on an opposite side of the first side end surface and a nitride-based semiconductor layer whose first side surface is a (000-1) plane starting from a first side wall of the first step portion and a second side surface starting from a second side wall of the second step portion on the main surface.
摘要翻译：氮化物系半导体器件包括基板，形成在基板的第一侧端面的主面侧的第一台阶部，形成在基本上平行于基板的第二侧端面的主面侧的第二台阶部第一侧端面与第一侧端面的相反一侧的第一侧面以及从第一台阶部的第一侧壁开始的第一侧面为（000-1）面的氮化物系半导体层，第二侧面开始从主表面上的第二台阶部分的第二侧壁。

5. 发明申请

US20110200065A1 NITRIDE BASED SEMICONDUCTOR LASER DEVICE 审中-公开
标题翻译：基于氮化物的半导体激光器件
公开(公告)号：US20110200065A1
公开(公告)日：2011-08-18
申请号：US13040798
申请日：2011-03-04
申请人： Shingo KAMEYAMA , Yasuhiko NOMURA , Ryoji HIROYAMA , Masayuki HATA
发明人： Shingo KAMEYAMA , Yasuhiko NOMURA , Ryoji HIROYAMA , Masayuki HATA
IPC分类号： H01S5/028
CPC分类号： H01S5/32341 , H01S5/0282 , H01S5/0287 , H01S5/1082 , H01S5/227 , H01S5/3202 , H01S2301/176
摘要： One facet and the other facet of a nitride based semiconductor laser device are respectively composed of a cleavage plane of (0001) and a cleavage plane of (000 1). Thus, the one facet and the other facet are respectively a Ga polar plane and an N polar plane. A portion of the one facet and a portion of the other facet, which are positioned in an optical waveguide, constitute a pair of cavity facets. A first protective film including oxygen as a constituent element is formed on the one facet. A second protective film including nitrogen as a constituent element is formed on the other facet.
摘要翻译：氮化物基半导体激光器件的一个面和另一个面分别由（0001）的解理面和（000 1）的解理面构成。因此，一个面和另一个面分别是Ga极平面和N极平面。位于光波导中的一个面和另一个面的一部分的一部分构成一对腔面。在一个面上形成包括氧作为构成元素的第一保护膜。在另一方面形成包括氮作为构成元素的第二保护膜。

6. 发明申请

US20110128467A1 AREA SENSOR AND DISPLAY DEVICE INCLUDING AREA SENSOR 有权
标题翻译：区域传感器和显示设备，包括区域传感器
公开(公告)号：US20110128467A1
公开(公告)日：2011-06-02
申请号：US12994155
申请日：2009-04-17
申请人： Shinichi Miyazaki , Norikazu Hohshi , Masakazu Wada , Kengo Takahama , Toshiaki Nakagawa , Kohji Yabuta , Masayuki Hata
发明人： Shinichi Miyazaki , Norikazu Hohshi , Masakazu Wada , Kengo Takahama , Toshiaki Nakagawa , Kohji Yabuta , Masayuki Hata
IPC分类号： G02F1/1335 , H01J40/14
CPC分类号： G02F1/13338 , G02F2001/13312 , G06F3/0412 , G06F3/042 , G09G2360/148
摘要： A liquid crystal display device (100) of the present invention includes: a liquid crystal panel (20) including: an active matrix substrate (21); a counter substrate (22); and a liquid crystal layer (23) provided between the active matrix substrate (21) and the counter substrate (22); and a backlight (10) illuminating the liquid crystal panel. The liquid crystal display device (100) has an area sensor function for detecting an external input position, and further includes a reflectance changing section (50) that reduces a reflectance of light from the backlight (10) in response to application of pressure on a panel surface (100a). The reflectance changing section (50) is configured so that in a state where no pressure is applied on the panel surface (100a), an air layer (50c) is formed between two elastic films (50a and 50b) whereas in a state where pressure is applied on the panel surface (100a), the two elastic films (50a and 50b) contact each other.
摘要翻译：本发明的液晶显示装置（100）包括：液晶面板（20），包括：有源矩阵基板（21）; 相对基板（22）; 以及设置在有源矩阵基板（21）和对置基板（22）之间的液晶层（23）。以及照亮液晶面板的背光（10）。液晶显示装置（100）具有用于检测外部输入位置的区域传感器功能，并且还包括反射率改变部（50），该反射率改变部（50）响应于对所述背光（10）施加压力而降低来自所述背光（10）的光的反射率面板表面（100a）。反射率变更部（50）构成为在不对面板（100a）施加压力的状态下，在两个弹性膜（50a，50b）之间形成空气层（50c），而在压力施加在面板表面（100a）上，两个弹性膜（50a和50b）彼此接触。

7. 发明申请

US20110101419A1 SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND OPTICAL APPARATUS 审中-公开
标题翻译：半导体器件，制造半导体器件和光学器件的方法
公开(公告)号：US20110101419A1
公开(公告)日：2011-05-05
申请号：US12909136
申请日：2010-10-21
申请人： Masayuki Hata , Yasumitsu Kunoh
发明人： Masayuki Hata , Yasumitsu Kunoh
IPC分类号： H01L29/04 , H01L21/20
CPC分类号： H01L21/0243 , B82Y20/00 , H01L21/02389 , H01L21/02433 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01S5/0202 , H01S5/0207 , H01S5/02212 , H01S5/028 , H01S5/2009 , H01S5/2201 , H01S5/2214 , H01S5/3063 , H01S5/3201 , H01S5/3211 , H01S5/3406 , H01S5/34333 , H01S2301/173 , H01S2304/04
摘要： This semiconductor device includes a substrate, an underlayer formed on a main surface of the substrate, a first semiconductor layer and a second semiconductor layer. Unstrained lattice constants of the underlayer and the second semiconductor layer in a second direction are larger than a lattice constant of the substrate in the second direction in an unstrained state. Lattice constants of the underlayer and the second semiconductor layer in the second direction in a state of being formed on the main surface are larger than the lattice constant of the substrate in the second direction.
摘要翻译：该半导体器件包括衬底，形成在衬底的主表面上的底层，第一半导体层和第二半导体层。在第二方向上的下层和第二半导体层的非限制晶格常数大于基板在无限制状态下在第二方向上的晶格常数。在形成在主表面上的状态下，底层和第二半导体层在第二方向上的晶格常数大于基板在第二方向上的晶格常数。

8. 发明授权

US07885304B2 Nitride-based semiconductor laser device and method of manufacturing the same 失效
标题翻译：氮化物半导体激光器件及其制造方法
公开(公告)号：US07885304B2
公开(公告)日：2011-02-08
申请号：US12415647
申请日：2009-03-31
申请人： Yasuto Miyake , Ryoji Hiroyama , Masayuki Hata , Yasumitsu Kuno
发明人： Yasuto Miyake , Ryoji Hiroyama , Masayuki Hata , Yasumitsu Kuno
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0202 , H01S5/0207 , H01S5/028 , H01S5/0282 , H01S5/2077 , H01S5/2201 , H01S5/2214 , H01S5/34333 , H01S5/4031 , H01S2301/185
摘要： A nitride-based semiconductor laser device includes a nitride-based semiconductor layer formed on a main surface of a substrate and having an emission layer, wherein the nitride-based semiconductor layer includes a first side surface formed by a (000-1) plane and a second side surface inclined with respect to the first side surface, and a ridge having an optical waveguide extending perpendicular to a [0001] direction in an in-plane direction of the main surface of the substrate is formed by a region held between the first side surface and the second side surface.
摘要翻译：氮化物系半导体激光装置包括形成在基板的主表面上并具有发光层的氮化物系半导体层，其中，所述氮化物系半导体层包括由（000-1）面形成的第一侧面和相对于第一侧面倾斜的第二侧面，以及具有沿基板的主面的面内方向垂直于[0001]方向延伸的光波导的脊形成在保持在第一侧表面和第二侧表面。

9. 发明申请

US20100265981A1 NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DIODE, NITRIDE-BASED SEMICONDUCTOR LASER DEVICE, METHOD OF MANUFACTURING THE SAME, AND METHOD OF FORMING NITRIDE-BASED SEMICONDUCTOR LAYER 审中-公开
标题翻译：基于氮化物的半导体发光二极管，基于氮化物的半导体激光器件，其制造方法和形成基于氮化物的半导体层的方法
公开(公告)号：US20100265981A1
公开(公告)日：2010-10-21
申请号：US12809770
申请日：2008-12-12
申请人： Ryoji Hiroyama , Yasuto Miyake , Yasumitsu Kunoh , Yasuyuki Bessho , Masayuki Hata
发明人： Ryoji Hiroyama , Yasuto Miyake , Yasumitsu Kunoh , Yasuyuki Bessho , Masayuki Hata
IPC分类号： H01S5/323 , H01L33/30 , H01L33/00 , H01L21/20 , H01L33/10
CPC分类号： H01S5/32341 , H01L33/007 , H01L33/16 , H01L33/20 , H01S5/0202 , H01S5/0203 , H01S5/18 , H01S5/2231 , H01S5/3203 , H01S5/4031
摘要： A nitride-based semiconductor light-emitting diode capable of suppressing complication of a manufacturing process while improving light extraction efficiency from a light-emitting layer and further improving flatness of a semiconductor layer is obtained. This nitride-based semiconductor light-emitting diode (30) includes a substrate (11) formed with a recess portion (21) on a main surface and a nitride-based semiconductor layer (12) having a light-emitting layer (14) on the main surface and including a first side surface (12a) having a (000-1) plane formed to start from a first inner side surface (21a) of the recess portion and a second side surface (12b) formed at a region opposite to the first side surface with the light-emitting layer therebetween to start from a second inner side surface (21b) of the recess portion on the main surface.
摘要翻译：能够抑制发光层的光提取效率的提高，进一步提高半导体层的平坦度的氮化物系半导体发光二极管。该氮化物系半导体发光二极管（30）具备在主表面上形成有凹部（21）的基板（11）和具有发光层（14）的氮化物系半导体层（12）所述主表面包括形成为从所述凹部的第一内侧表面（21a）开始的（000-1）面的第一侧表面（12a）和形成在与所述凹部相对的区域形成的第二侧表面（12b）其间具有发光层的第一侧表面从主表面上的凹部的第二内侧表面（21b）开始。

10. 发明授权

US07817694B2 Semiconductor laser apparatus and manufacturing method thereof 失效
标题翻译：半导体激光装置及其制造方法
公开(公告)号：US07817694B2
公开(公告)日：2010-10-19
申请号：US11215066
申请日：2005-08-31
申请人： Masayuki Hata , Yasuyuki Bessho , Yasuhiko Nomura , Masayuki Shono
发明人： Masayuki Hata , Yasuyuki Bessho , Yasuhiko Nomura , Masayuki Shono
IPC分类号： H01S5/00
CPC分类号： H01S5/4025 , H01L2224/32245 , H01L2224/48091 , H01L2224/48464 , H01L2224/73265 , H01S5/4087 , H01L2924/00014
摘要： A one-chip semiconductor laser device for use in a semiconductor laser apparatus has a structure in which a red semiconductor laser device and an infrared semiconductor laser device are stacked on a blue-violet semiconductor laser device. The blue-violet semiconductor laser device is manufactured by forming semiconductor layers on a GaN substrate. Each of the red semiconductor laser device and the infrared semiconductor laser device is manufactured by forming semiconductor layers on a GaAs substrate. The modulus of elasticity of GaAs is smaller than the modulus of elasticity of GaN. The length of each of the red semiconductor laser device and the infrared semiconductor laser device is longer than the length of the blue-violet semiconductor laser device.
摘要翻译：在半导体激光装置中使用的单芯片半导体激光装置具有将红色半导体激光装置和红外半导体激光装置堆叠在蓝紫色半导体激光装置上的结构。通过在GaN衬底上形成半导体层来制造蓝紫色半导体激光器件。通过在GaAs衬底上形成半导体层来制造红色半导体激光器件和红外半导体激光器件。 GaAs的弹性模量小于GaN的弹性模量。红色半导体激光器件和红外半导体激光器件的长度比蓝紫色半导体激光器件的长度长。

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