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11. 发明申请

US20160329684A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件制造方法和半导体器件
公开(公告)号：US20160329684A1
公开(公告)日：2016-11-10
申请号：US15070669
申请日：2016-03-15
申请人： Mitsubishi Electric Corporation
发明人： Hitoshi SAKUMA
IPC分类号： H01S5/227 , H01S5/02
CPC分类号： H01S5/2275 , H01S5/0201 , H01S5/2222 , H01S5/323 , H01S2301/176
摘要： A method of manufacturing a semiconductor device, includes a step of forming, on a semiconductor substrate, a mesa stripe including an active layer, and a semiconductor layer covering the mesa stripe, a masking step of forming, on the semiconductor layer, a mask pattern through which the semiconductor layer is exposed on opposite sides of the mesa stripe, an isotropic etching step of performing isotropic etching on the semiconductor layer exposed through the mask pattern so that concaves having a circular-arc sectional shape are formed in the semiconductor layer, and an anisotropic etching step of performing anisotropic etching on the semiconductor layer through the mask pattern after the isotropic etching step so that etching progresses to the semiconductor substrate.
摘要翻译：一种制造半导体器件的方法包括在半导体衬底上形成包括有源层的台面条和覆盖台面条的半导体层的步骤，在半导体层上形成掩模图案的掩模步骤半导体层通过其暴露在台面条的相对侧上，各向同性蚀刻步骤对通过掩模图案曝光的半导体层进行各向同性蚀刻，使得在半导体层中形成具有圆弧截面形状的凹部，以及各向异性蚀刻步骤，在各向同性蚀刻步骤之后通过掩模图案在半导体层上进行各向异性蚀刻，以使蚀刻进行到半导体衬底。

12. 发明申请

US20160301477A1 EXTERNAL CAVITY LASER BASED WAVELENGTH DIVISION MULTIPLEXING SUPERCHANNEL TRANSCEIVERS 有权
公开(公告)号：US20160301477A1
公开(公告)日：2016-10-13
申请号：US14682158
申请日：2015-04-09
申请人： International Business Machines Corporation
发明人： Jason S. Orcutt
IPC分类号： H04B10/50 , H01S5/30 , H04B10/516 , G02B6/126 , H04J14/02 , H01S5/14 , G02B6/12
CPC分类号： H04B10/503 , G02B6/00 , G02B6/12004 , G02B6/126 , G02B6/2773 , G02B6/29382 , G02B2006/12164 , H01S3/2391 , H01S5/021 , H01S5/0287 , H01S5/041 , H01S5/06246 , H01S5/06821 , H01S5/0687 , H01S5/1028 , H01S5/14 , H01S5/141 , H01S5/142 , H01S5/146 , H01S5/3013 , H01S5/323 , H01S5/4031 , H01S2301/163 , H04B10/5053 , H04B10/506 , H04B10/516 , H04B10/801 , H04J14/02 , H04J14/06
摘要： A technique relates to a superchannel. Laser cavities include a first laser cavity, a next laser cavity, through a last laser cavity. Modulators include a first modulator, a next modulator, through a last modulator, each having a direct input, an add port, and an output. A concatenated arrangement of the laser cavities is configured to form the superchannel, which includes the last laser cavity coupled to the direct input of the last modulator, and the output of the last modulator coupled to the add port of the next modulator. The arrangement includes the next laser cavity coupled to direct input of the next modulator, and the output of the next modulator coupled to add port of first modulator, along with the first laser cavity coupled to direct input of the first modulator, and the output of first modulator coupled to input of a multiplexer, thus forming the superchannel into multiplexer.

13. 发明申请

US20160254411A1 SUBSTRATE HAVING ANNEALED ALUMINUM NITRIDE LAYER FORMED THEREON AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：具有形成其中的硝酸铝的衬底的衬底及其制造方法
公开(公告)号：US20160254411A1
公开(公告)日：2016-09-01
申请号：US14634713
申请日：2015-02-27
申请人： TOHOKU UNIVERSITY , MIE UNIVERSITY
发明人： Hiroyuki FUKUYAMA , Hideto MIYAKE
IPC分类号： H01L33/12 , H01L33/32 , H01S5/323 , H01L33/00
CPC分类号： H01L33/12 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02658 , H01L21/02664 , H01L33/0066 , H01L33/007 , H01L33/0095 , H01L33/32 , H01S5/0206 , H01S5/323 , H01S5/32341 , H01S2304/04
摘要： A substrate having an annealed AlN layer includes a substrate made of a material selected from among a group including sapphire, silicon carbide (SiC), and aluminum nitride (AlN), and an aluminum nitride (AlN) layer formed on the substrate and having a thickness of 100 nm or greater. The aluminum nitride layer is annealed at a prescribed annealing temperature and in a nitrogen/carbon monoxide (N2/CO) mixed gas atmosphere, and the nitrogen/carbon monoxide (N2/CO) mixed gas has a mixture ratio of N2 gas/CO gas in a range of 0.95/0.05 to 0.4/0.6.
摘要翻译：具有退火AlN层的基板包括由选自包括蓝宝石，碳化硅（SiC）和氮化铝（AlN）的组中的材料制成的基板和形成在基板上的氮化铝（AlN）层，并且具有厚度为100nm以上。氮化铝层在规定的退火温度和氮/一氧化碳（N 2 / CO）混合气体气氛中退火，氮/一氧化碳（N 2 / CO）混合气体具有N 2气体/ CO气体在0.95 / 0.05〜0.4 / 0.6的范围内。

14. 发明授权

US09246307B1 Thermal compensation for burst-mode laser wavelength drift 有权
标题翻译：突发模式激光波长漂移的热补偿
公开(公告)号：US09246307B1
公开(公告)日：2016-01-26
申请号：US14509662
申请日：2014-10-08
申请人： Futurewei Technologies, Inc.
发明人： Xuejin Yan , Jianmin Gong , Hongbing Lei , Jianhe Gao
IPC分类号： H01S3/04 , H01S5/06 , H01S5/026 , H01S5/12 , H01S5/323
CPC分类号： H01S5/0612 , H01S5/024 , H01S5/0261 , H01S5/0425 , H01S5/06213 , H01S5/06216 , H01S5/068 , H01S5/12 , H01S5/22 , H01S5/2222 , H01S5/223 , H01S5/227 , H01S5/323 , H01S2301/176
摘要： An apparatus comprising a burst-mode laser comprising an active layer and configured to emit an optical signal during a burst period, wherein a temperature change of the burst-mode laser causes the optical signal to shift in wavelength, and a heater thermally coupled to the active layer and configured to reduce a wavelength shift of the optical signal during the burst period by applying heat to the active layer based on timing of the burst period.
摘要翻译：一种包括突发模式激光器的装置，包括有源层并且被配置为在突发周期期间发射光信号，其中突发模式激光器的温度变化导致光信号在波长上移位，并且加热器热耦合到有源层，并且被配置为基于突发周期的定时，在突发周期期间通过向有源层施加热来减少光信号的波长偏移。

15. 发明申请

US20150333479A1 UNIDIRECTIONAL RING LASERS 有权
公开(公告)号：US20150333479A1
公开(公告)日：2015-11-19
申请号：US14811385
申请日：2015-07-28
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
发明人： Di Liang , David A. Fattal
IPC分类号： H01S5/10 , H01S5/042 , H01S3/083
CPC分类号： H01S3/083 , H01S3/063 , H01S5/021 , H01S5/026 , H01S5/042 , H01S5/0656 , H01S5/1028 , H01S5/1071 , H01S5/323 , H01S5/4087
摘要： A laser includes an active ring, a passive waveguide, and a reflector. The active ring is to generate light. The passive waveguide is associated with the active ring to capture generated light. The reflector is associated with the passive waveguide to cause captured light from the waveguide to be coupled into the active ring to trigger domination of unidirectional lasing in the active ring to generate light.

16. 发明申请

US20150325979A1 EDGE EMITTING SEMICONDUCTOR LASER 审中-公开
标题翻译：边缘发射半导体激光
公开(公告)号：US20150325979A1
公开(公告)日：2015-11-12
申请号：US14805808
申请日：2015-07-22
申请人： OSRAM Opto Semiconductors GmbH
发明人： Christian Lauer , Alvaro Gomez-Iglesias
IPC分类号： H01S5/065 , H01S5/042 , H01S5/32 , H01S5/40 , H01S5/10 , H01S5/20
CPC分类号： H01S5/0655 , H01S5/02284 , H01S5/0425 , H01S5/10 , H01S5/1082 , H01S5/2004 , H01S5/2018 , H01S5/2036 , H01S5/2081 , H01S5/2086 , H01S5/209 , H01S5/3211 , H01S5/3213 , H01S5/323 , H01S5/4031 , H01S2301/166 , H01S2301/176 , H01S2301/18
摘要： An edge emitting semiconductor laser includes a semiconductor body including a waveguide region, the waveguide region including first and second waveguide layers and an active layer arranged between the first and second waveguide layers, that generates laser radiation; the waveguide region is arranged between a first and second cladding layers disposed downstream of the waveguide region; a phase structure for selection of lateral modes of the laser radiation emitted by the active layer, wherein the phase structure includes at least one cutout extending from a top side of the semiconductor body into the second cladding layer; at least one first intermediate layer composed of a semiconductor material different from that of the second cladding layer embedded into the second cladding layer; and the cutout at least partly extends from the top side into the first intermediate layer; the second cladding layer contains a first partial layer adjoining the waveguide region.
摘要翻译：边缘发射半导体激光器包括：半导体本体，其包括波导区域，波导区域包括第一和第二波导层以及布置在第一和第二波导层之间的有源层，其产生激光辐射; 波导区域布置在布置在波导区域下游的第一和第二覆层之间; 用于选择由有源层发射的激光辐射的横向模式的相位结构，其中所述相位结构包括从所述半导体主体的顶侧延伸到所述第二覆层中的至少一个切口; 至少一个第一中间层，由与第二包覆层嵌入的第二包覆层不同的半导体材料构成; 并且所述切口至少部分地从所述顶侧延伸到所述第一中间层中; 第二包层包含邻接波导区域的第一部分层。

17. 发明授权

US09136671B2 Edge emitting semiconductor laser 有权
标题翻译：边缘发射半导体激光器
公开(公告)号：US09136671B2
公开(公告)日：2015-09-15
申请号：US13503661
申请日：2010-08-25
申请人： Christian Lauer , Alvaro Gomez-Iglesias
发明人： Christian Lauer , Alvaro Gomez-Iglesias
IPC分类号： H01S5/00 , H01S5/10 , H01S5/042 , H01S5/065 , H01S5/20 , H01S5/32 , H01S5/40
CPC分类号： H01S5/0655 , H01S5/02284 , H01S5/0425 , H01S5/10 , H01S5/1082 , H01S5/2004 , H01S5/2018 , H01S5/2036 , H01S5/2081 , H01S5/2086 , H01S5/209 , H01S5/3211 , H01S5/3213 , H01S5/323 , H01S5/4031 , H01S2301/166 , H01S2301/176 , H01S2301/18
摘要： An edge emitting semiconductor laser includes a semiconductor body including a waveguide region, wherein the waveguide region includes a first waveguide layer, a second waveguide layer and an active layer arranged between the first and second waveguide layers and generates laser radiation, the waveguide region is arranged between first and second cladding layers disposed downstream of the waveguide region in a growth direction of the semiconductor body, a phase structure is formed in the semiconductor body and includes at least one cutout extending from a top side of the semiconductor body into the second cladding layer, at least one first intermediate layer including a semiconductor material different from the semiconductor material of the second cladding layer is embedded into the second cladding layer, and the cutout extends from a top side of the semiconductor body at least partly into the first intermediate layer.
摘要翻译：边缘发射半导体激光器包括：包括波导区域的半导体本体，其中波导区域包括第一波导层，第二波导层和布置在第一和第二波导层之间的有源层，并且产生激光辐射，波导区域布置在半导体本体的生长方向上设置在波导区域下游的第一和第二覆层之间，在半导体本体中形成相结构，并且包括从半导体本体的顶侧延伸到第二覆层的至少一个切口包含与第二包层的半导体材料不同的半导体材料的至少一个第一中间层嵌入到第二包层中，并且切口从半导体本体的顶侧至少部分地延伸到第一中间层。

18. 发明授权

US09077152B2 Laser device having a looped cavity capable of being functionalized 有权
标题翻译：具有能够被功能化的环状空腔的激光装置
公开(公告)号：US09077152B2
公开(公告)日：2015-07-07
申请号：US14131497
申请日：2012-07-11
申请人： Badhise Ben Bakir , Antoine Descos , Jean-Marc Fedeli , Nicolas Olivier
发明人： Badhise Ben Bakir , Antoine Descos , Jean-Marc Fedeli , Nicolas Olivier
IPC分类号： H01S5/00 , H01S5/323 , H01S5/10 , H01S5/02 , H01S5/026
CPC分类号： H01S5/323 , H01S5/0206 , H01S5/026 , H01S5/0265 , H01S5/1014 , H01S5/1032 , H01S5/1071
摘要： The laser device includes an amplifier including a III-V heterostructure arranged to generate photons, and a waveguide which forms a loop and is optically coupled to the amplifier. The amplifier is arranged facing the waveguide only in the region of a first section of the waveguide.
摘要翻译：该激光装置包括放大器，该放大器包括布置成产生光子的III-V异质结构，以及形成环并光耦合到放大器的波导。放大器仅布置在波导的第一部分的区域中面向波导。

19. 发明授权

US08891573B2 6.1 angstrom III-V and II-VI semiconductor platform 有权
标题翻译： 6.1埃III-V和II-VI半导体平台
公开(公告)号：US08891573B2
公开(公告)日：2014-11-18
申请号：US13893232
申请日：2013-05-13
申请人： Yong-Hang Zhang
发明人： Yong-Hang Zhang
IPC分类号： H01S5/00 , H01S5/30 , H01S5/323 , H01L21/8252 , H01S5/026 , H01S5/183 , H01L21/8254 , H01L29/78 , H01L29/267 , H01L29/20 , H01L27/06 , H01L21/8258 , H01L29/22 , H01S5/042 , H01S5/02 , H01S5/343
CPC分类号： H01S5/323 , B82Y20/00 , H01L21/8252 , H01L21/8254 , H01L21/8258 , H01L27/0605 , H01L29/20 , H01L29/22 , H01L29/267 , H01L29/78 , H01S5/021 , H01S5/0261 , H01S5/0425 , H01S5/18361 , H01S5/3009 , H01S5/3095 , H01S5/34306
摘要： Use of semiconductor materials having a lattice constant of within +/−1.6% of 6.1 angstroms facilitates improved semiconductor device performance and new semiconductor structures, for example integration of field-effect devices and optoelectronic devices on a single wafer. High-mobility channels are enabled, improving device performance.
摘要翻译：晶格常数在6.1埃+/- 1.6％之内的半导体材料的使用有助于改善半导体器件性能和新的半导体结构，例如将场效应器件和光电器件集成在单个晶片上。启用高移动性通道，提高设备性能。

20. 发明申请

US20140287545A1 HIGH RELIABILITY ETCHED-FACET PHOTONIC DEVICES 有权
公开(公告)号：US20140287545A1
公开(公告)日：2014-09-25
申请号：US14296144
申请日：2014-06-04
申请人： BinOptics Corporation
发明人： Alex A. BEHFAR
IPC分类号： H01S5/323
CPC分类号： H01S5/323 , G02F1/17 , H01S5/0042 , H01S5/0201 , H01S5/0202 , H01S5/0203 , H01S5/028 , H01S5/0282 , H01S5/16 , H01S5/22 , H01S5/2214
摘要： Semiconductor photonic device surfaces are covered with a dielectric or a metal protective layer. The protective layer covers the entire device, including regions near facets at active regions, to prevent bare or unprotected semiconductor regions, thereby to form a very high reliability etched facet photonic device.

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