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11. 发明授权

US3844904A Anodic oxidation of gallium phosphide 失效
标题翻译：阳极氧化磷灰石
公开(公告)号：US3844904A
公开(公告)日：1974-10-29
申请号：US44039574
申请日：1974-02-07
申请人： BELL TELEPHONE LABOR INC
发明人： YAHALOM J
IPC分类号： C01B25/08 , C25D11/32 , H01L21/316 , C23B11/02
CPC分类号： H01L21/02241 , C25D11/32 , H01L21/02258 , H01L21/31679
摘要： A process is described for producing passivating and insulating layers on GaP and related compounds. The process involves anodic oxidation under conditions which permit the use of high current densities without detrimental effects on layer properties.
摘要翻译：描述了在GaP和相关化合物上制备钝化和绝缘层的方法。该方法涉及在允许使用高电流密度而对层性能没有不利影响的条件下的阳极氧化。

12. 发明授权

US3776789A METHOD FOR PROTECTING GaAs WAFER SURFACES 失效
标题翻译：保护GaAs WAFER表面的方法
公开(公告)号：US3776789A
公开(公告)日：1973-12-04
申请号：US3776789D
申请日：1972-05-01
申请人： IBM
发明人： BASI J , HULL E
IPC分类号： H01L21/308 , C30B29/42 , H01L21/316 , H01L23/31 , H01L7/50
CPC分类号： H01L21/31679 , H01L21/02241 , H01L21/02255 , H01L23/3157 , H01L2924/0002 , H01L2924/00
摘要： A process for the protecton of gallium arsenide surfaces comprises treating the surface with sodium oxychloride solution to form an interim protective film and subsequently removing the protective film utilizing sodium oxychloride and sodium carbonate prior to further processing.
摘要翻译：用于保护砷化镓表面的方法包括用氯氧化钠溶液处理表面以形成临时保护膜，随后在进一步加工之前利用氯化钠和碳酸钠除去保护膜。

13. 发明申请

US20060121700A1 Method of forming a gate insulator in group III-V nitride semiconductor devices 有权
标题翻译：在III-V族氮化物半导体器件中形成栅极绝缘体的方法
公开(公告)号：US20060121700A1
公开(公告)日：2006-06-08
申请号：US11005193
申请日：2004-12-06
申请人： Lung-Han Peng , Han-Ming Wu , Jing-Yi Lin
发明人： Lung-Han Peng , Han-Ming Wu , Jing-Yi Lin
IPC分类号： H01L21/84 , H01L21/20
CPC分类号： H01L21/02241 , H01L21/02258 , H01L21/02337 , H01L21/3143 , H01L21/31679 , H01L29/78681
摘要： A method of forming a gate insulator in the manufacture of a semiconductor device comprises conducting a photo-assisted electrochemical process to form a gate-insulating layer on a gallium nitride layer of the semiconductor device, wherein the gate-insulating layer includes gallium oxynitride and gallium oxide, and performing a rapid thermal annealing process. The photo-assisted electrochemical process uses an electrolyte bath including buffered CH3COOH at a pH between about 5.5 and 7.5. The rapid thermal annealing process is conducted in O2 environment at a temperature between about 500° C. and 800° C.
摘要翻译：在制造半导体器件中形成栅极绝缘体的方法包括进行光辅助电化学处理以在半导体器件的氮化镓层上形成栅极绝缘层，其中栅极绝缘层包括氮氧化镓和镓并进行快速热退火处理。光辅助电化学方法在约5.5和7.5之间的pH下使用包括缓冲CH 3 COOH的电解质浴。快速热退火工艺在O 2 O 2环境中在约500℃至800℃的温度下进行。

14. 发明授权

US4863880A InSb device manufacturing by anodic oxidation 失效
标题翻译： InSb器件通过阳极氧化制造
公开(公告)号：US4863880A
公开(公告)日：1989-09-05
申请号：US171779
申请日：1988-03-22
申请人： Hiroyuki Fujisada
发明人： Hiroyuki Fujisada
IPC分类号： C25D11/32 , H01L21/316
CPC分类号： H01L21/02241 , H01L21/02258 , H01L21/31679
摘要： A method of manufacturing an InSb device that uses an anodic oxide layer as a structural element, utilizing a voltage-controlled mechanism to control the thickness of the anodic oxide layer formation, and in which the anodization time under an anodization limiting voltage is not less than 10 seconds and not more than 20 minutes.
摘要翻译：一种制造使用阳极氧化层作为结构元件的InSb器件的方法，利用电压控制机构来控制阳极氧化层形成的厚度，其中在阳极氧化极限电压下的阳极氧化时间不小于 10秒不超过20分钟。

15. 发明授权

US4524378A Anodizable metallic contacts to mercury cadmium telleride 失效
标题翻译：可汞化的金属接触到汞镉排水
公开(公告)号：US4524378A
公开(公告)日：1985-06-18
申请号：US516416
申请日：1983-07-21
申请人： Charles A. Cockrum , Joan K. Chia , James F. Kreider
发明人： Charles A. Cockrum , Joan K. Chia , James F. Kreider
IPC分类号： H01L21/285 , H01L21/316 , H01L21/443 , H01L21/469 , H01L23/532 , H01L29/45 , H01L23/48 , H01L21/306
CPC分类号： H01L21/02186 , H01L21/02244 , H01L21/02258 , H01L21/28575 , H01L21/31679 , H01L21/31687 , H01L21/443 , H01L21/469 , H01L23/53209 , H01L29/45 , H01L29/452 , H01L2924/0002
摘要： Metallic contacts to compound semiconductor devices which employ a native oxide for passivation are provided. The metallic contacts of the invention comprise at least two metal layers: a first layer making non-rectifying contact with the semiconductor surface and providing a diffusion barrier and a second layer thereon comprising an easily oxidizable metal. A low resistivity metal layer may optionally be interposed between the two metal layers for improved conductivity.The metallic contact is formed prior to passivation. The diffusion barrier layer prevents diffusion of potentially deleterious materials into the semiconductor, while exposed portions of the oxidizable metal form an insulating oxide during anodic passivation in an electrolyte. The insulating oxide prevents disruption of the electric field distribution in the electrolyte, thereby eliminating passivating oxide and device non-uniformities commonly encountered in the formation of prior art metallic contacts and providing more uniform semiconductor oxide thickness.
摘要翻译：提供了使用钝化的天然氧化物的化合物半导体器件的金属接触。本发明的金属触点包括至少两个金属层：与半导体表面进行非整流接触并提供扩散阻挡层的第一层和在其上的包含易氧化金属的第二层。可以可选地在两个金属层之间插入低电阻率金属层，以改善导电性。在钝化之前形成金属接触。扩散阻挡层防止潜在的有害材料扩散到半导体中，而在电解质中的阳极钝化期间，可氧化金属的暴露部分形成绝缘氧化物。绝缘氧化物防止电解质中的电场分布的破坏，从而消除在现有技术的金属触点的形成中通常遇到的钝化氧化物和器件不均匀性，并提供更均匀的半导体氧化物厚度。

16. 发明授权

US4454008A Electrochemical method for producing a passivated junction in alloy semiconductors 失效
标题翻译：用于在合金半导体中生产钝化结的电化学方法
公开(公告)号：US4454008A
公开(公告)日：1984-06-12
申请号：US469491
申请日：1983-02-24
申请人： Juergen L. W. Pohlmann
发明人： Juergen L. W. Pohlmann
IPC分类号： C25D11/32 , H01L21/316 , H01L21/473
CPC分类号： H01L21/02175 , C25D11/32 , H01L21/02233 , H01L21/02258 , H01L21/31679 , H01L21/473
摘要： A ternary or more complex semiconductor alloy is treated to form simultansly a junction beneath its surface and to passivate the same surface. The treatment consists of connecting the semiconductor to one electrode of an electrolytic circuit, immersing it in an electrolyte which may contain a leachant, and energizing between electrolytic circuit electrodes with a substantially square electric current wave with a direct current average value. After a predetermined time, the semiconductor is removed from the electrolyte, is disconnected from the electrolyte, and is washed, rinsed, and dried. During the process the electric current causes ions of the semiconductor to migrate toward its surface, where they enter the electrolyte. This depletion of ions effectively forms a junction; the current also causes oxidation of the semiconductor surface for passivation.
摘要翻译：处理三元或更复杂的半导体合金以同时形成其表面下方的结，并钝化相同的表面。该处理包括将半导体连接到电解电路的一个电极，将其浸入可包含浸出液的电解质中，并且在具有直流平均值的基本上为方形的电流波的电解电路电极之间通电。在预定时间之后，将半导体从电解质中除去，与电解液断开，并进行清洗，冲洗和干燥。在该过程中，电流导致半导体离子迁移到其表面，在那里它们进入电解质。离子的这种耗尽有效地形成了一个结; 电流也导致半导体表面氧化以进行钝化。

17. 发明授权

US4194954A Electrolytic etch preparation of semiconductor surfaces 失效
标题翻译：半导体表面的电解蚀刻制备
公开(公告)号：US4194954A
公开(公告)日：1980-03-25
申请号：US884388
申请日：1978-03-08
申请人： Marc M. Faktor , John L. Stevenson
发明人： Marc M. Faktor , John L. Stevenson
IPC分类号： C25F3/12 , H01L21/3063 , H01L21/316
CPC分类号： H01L21/02241 , C25F3/12 , H01L21/02258 , H01L21/30635 , H01L21/31679
摘要： The surface of a semiconductor is prepared by electrolytically removing the surface of the semiconductor. A two component electrolyte is used. A first component forms an oxide on the surface of the semiconductor and the second component dissolves the oxide.
摘要翻译：通过电解去除半导体的表面来制备半导体的表面。使用双组分电解质。第一组分在半导体的表面上形成氧化物，第二组分溶解氧化物。

18. 发明授权

US4145262A Method of manufacturing a semiconductor device and semiconductor device manufactured according to the method 失效
标题翻译：根据该方法制造的半导体器件和半导体器件的制造方法
公开(公告)号：US4145262A
公开(公告)日：1979-03-20
申请号：US887647
申请日：1978-03-17
申请人： Rudolf P. Tijburg , Teunis VAN Dongen
发明人： Rudolf P. Tijburg , Teunis VAN Dongen
IPC分类号： H01L21/316 , H01S5/028 , H01S5/22 , C25D9/00 , C25D9/06 , C25D11/32
CPC分类号： H01L21/02233 , H01L21/02258 , H01L21/31679 , H01S5/028 , H01S5/22
摘要： A method of manufacturing a semiconductor device for generating laser beams is disclosed in which the mirror faces of the device are subjected to an oxidation treatment which includes an electrolytic oxidation step.

19. 发明授权

US4080721A Fabrication of semiconductor device 失效
标题翻译：半导体器件制造
公开(公告)号：US4080721A
公开(公告)日：1978-03-28
申请号：US591996
申请日：1975-06-30
申请人： Roland Y. Hung
发明人： Roland Y. Hung
IPC分类号： H01L29/78 , H01L21/265 , H01L21/316 , H01L21/331 , H01L21/60 , H01L29/20 , H01L29/73 , B01J17/00
CPC分类号： H01L29/20 , H01L21/02241 , H01L21/02258 , H01L21/26546 , H01L21/31679 , Y10S148/084 , Y10S205/92
摘要： A method for fabricating an indium antimonide semiconductor device which includes anodizing through a portion of the thickness of an indium antimonide substrate containing an active impurity of a first type; selectively ion implanting an active impurity of a second type into the indium antimonide substrate; annealing; providing for ohmic electrical contact between preselected regions of the indium antimonide substrate and subsequently applied electrical contacts; and depositing a plurality of electrical contacts, a predetermined number of which are in ohmic electrical contact with the preselected regions of the substrate to thereby provide the semiconductor device; and semiconductor device obtained thereby.
摘要翻译：一种制造锑化锑半导体器件的方法，其包括通过含有第一类型的有源杂质的铟锑化物衬底的厚度的一部分进行阳极氧化; 选择性地将第二类型的有源杂质注入到锑化铟衬底中; 退火; 提供铟锑化物衬底的预选区域和随后施加的电触点之间的欧姆电接触; 以及沉积多个电触点，其中预定数量的电触头与所述基板的预选区域欧姆电接触，从而提供所述半导体器件; 和由此获得的半导体器件。

20. 发明授权

US3833435A Dielectric optical waveguides and technique for fabricating same 失效
标题翻译：电介质光波导及其制造技术
公开(公告)号：US3833435A
公开(公告)日：1974-09-03
申请号：US29193772
申请日：1972-09-25
申请人： BELL TELEPHONE LABOR INC
发明人： LOGAN R , WIEGMANN W , SCHWARTZ B , TRACY J
IPC分类号： G02B6/12 , G02B6/13 , H01L21/306 , H01L21/316 , H01L33/00 , H01S5/22 , H01L7/50
CPC分类号： H01L21/02178 , G02B6/131 , H01L21/02233 , H01L21/02258 , H01L21/30612 , H01L21/31679 , H01L33/0062 , H01S5/22 , Y10S148/051 , Y10S148/065 , Y10S148/072 , Y10S148/169 , Y10S438/911
摘要： A method of fabricating dielectric optical waveguides comprises the steps of: (1) fabricating a single or double heterostructure from the GaAs-AlGaAs system preferably by liquid phase epitaxy or molecular beam epitaxy; (2) forming a native oxide layer on the top surface of the heterostructure by anodization in H2O2; (3) removing a portion of the oxide layer to form a mask and hence to define the waveguide shape in the direction of light propagation; and (4) forming a mesa-like structure with optically flat side walls by etching at a slow rate in Br2-CH3OH. After step (4) two alternative techniques leading to structurally different waveguides may be followed. In one technique, an AlGaAs layer is epitaxially grown over the mesa to form a two dimensional waveguide. In the other technique, the edges of the active region of an AlGaAs double heterostructure are differentially etched in a neutral solution of H2O2. The latter step is particularly useful in the fabrication of active devices because the resulting structure is self-masking, thereby facilitating the formation of electrical contacts.
摘要翻译：制造介质光波导的方法包括以下步骤：（1）优选地通过液相外延或分子束外延从GaAs-AlGaAs系统制造单或双异质结构; （2）通过阳极氧化在H 2 O 2中在异质结构的顶表面上形成天然氧化物层; （3）除去氧化物层的一部分以形成掩模，从而在光传播的方向上限定波导形状; 和（4）通过在Br 2 -CH 3 OH中以缓慢的速率蚀刻形成具有光学平坦侧壁的台面状结构。在步骤（4）之后，可以遵循导致结构不同的波导的两种替代技术。在一种技术中，在台面上外延生长AlGaAs层以形成二维波导。在另一种技术中，AlHAs双异质结构的有源区的边缘在H 2 O 2的中性溶液中进行差分蚀刻。后一步骤在制造有源器件中特别有用，因为所得到的结构是自掩蔽的，从而有助于电接触的形成。

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