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11. 发明授权

US08237242B2 Capacitor, method of producing the same, semiconductor device, and liquid crystal display device 有权
标题翻译：电容器及其制造方法，半导体器件和液晶显示装置
公开(公告)号：US08237242B2
公开(公告)日：2012-08-07
申请号：US11880551
申请日：2007-07-23
申请人： Kiwamu Adachi , Satoshi Horiuchi
发明人： Kiwamu Adachi , Satoshi Horiuchi
IPC分类号： H01L29/92
CPC分类号： H01G4/10 , G02F1/136213 , H01G4/1254 , H01G4/20 , H01G4/33 , H01L28/40 , H01L28/56
摘要： A capacitor includes a first electrode, a dielectric layer, and a second electrode that are sequentially stacked. The dielectric layer has a stacked layer structure including a predetermined number of hafnium oxide sublayers and predetermined number of tantalum oxide sublayers. The number, materials, and thicknesses of the sublayers are determined so that the thickness ratio has a range in which, in voltage-leakage current characteristics showing the relationship between the voltage between the first and second electrodes and the leakage current, a start voltage at which the slope of an increase in the current starts to discontinuously increase satisfies an electric field strength of 3 [MV/cm] or more when the ratio of the total thickness of the predetermined number of tantalum oxide sublayers to the total thickness of the dielectric layer is varied, and the thickness ratio is within the range such that the start voltage is within the range.
摘要翻译：电容器包括依次层叠的第一电极，电介质层和第二电极。电介质层具有包含规定数量的氧化铪层和预定数量的氧化钽层的堆叠层结构。确定子层的数量，材料和厚度，使得厚度比具有这样的范围，其中，在表示第一和第二电极之间的电压与漏电流之间的关系的电压 - 漏电流特性中，当电流增加的斜率开始不连续地增加时，当预定数量的氧化钽层的总厚度与介电层的总厚度的比例达到3 [MV / cm]以上时的电场强度变化，厚度比在起始电压在该范围内的范围内。

12. 发明授权

US08169771B2 High-stability thin-film capacitor and method for making the same 有权
标题翻译：高稳定性薄膜电容器及其制造方法
公开(公告)号：US08169771B2
公开(公告)日：2012-05-01
申请号：US12311529
申请日：2007-10-16
申请人： Emmanuel Defay , Julie Guillan , Serge Blonkowski
发明人： Emmanuel Defay , Julie Guillan , Serge Blonkowski
IPC分类号： H01G4/06 , H01G4/10
CPC分类号： H01G4/1218 , H01G4/1254 , H01G4/33 , H01L27/016 , H01L28/40 , H01L28/56
摘要： The dielectric of a capacitor is formed by superposition of at least two thin layers made from the same metal oxide, respectively in crystalline and amorphous form and respectively presenting quadratic voltage coefficients of capacitance of opposite signs. The respective thicknesses da and dc of the amorphous and crystalline thin layers comply with the following general formulas: d a = ɛ 0 ⁢ ɛ a C s ⁢ ⁢ 0 ⁢ ( 1 1 - ( ɛ c ɛ a ) 2 ⁢ γ a γ c ) ⁢ ⁢ and ⁢ ⁢ d c = ɛ 0 ⁢ ɛ c C s ⁢ ⁢ 0 ⁢ ( 1 1 - ( ɛ a ɛ c ) 2 ⁢ γ c γ a ) in which ∈0 corresponds to the electric constant, ∈c and ∈a correspond to the relative permittivity of the metal oxide respectively in crystalline form and in amorphous form, Cs0 corresponds to the total surface capacitance at zero field, and γc and γa correspond to the quadratic coefficient of capacitance with respect to the electric field of the metal oxide respectively in crystalline form and in amorphous form.
摘要翻译：电容器的电介质通过分别由相同金属氧化物制成的至少两个薄层分别以结晶和非晶形式叠加并且分别呈现相反符号的电容的二次电压系数而形成。无定型和结晶薄层的各自的厚度da和dc符合以下通式：da =εεεC s⁢0（1 1 - （εcεa）2γaγc） ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⁢⁢⁢⁢⁢⁢⁢⁢aɛɛɛɛɛɛɛɛɛɛ∈∈∈∈∈∈∈∈∈∈∈∈∈∈ 分别对应于金属氧化物的结晶形式和非晶形式的相对介电常数，Cs0对应于零场的总表面电容，γc和γa对应于相对于金属氧化物电场的电容的二次系数分别为结晶形式和无定形形式。

13. 发明申请

US20100317502A1 SINTERED MATERIAL FOR DIELECTRIC SUBSTANCE AND PROCESS FOR PREPARING THE SAME 审中-公开
标题翻译：用于介电材料的烧结材料及其制备方法
公开(公告)号：US20100317502A1
公开(公告)日：2010-12-16
申请号：US12617122
申请日：2009-11-12
申请人： Sang-Im YOO , Young-Mi KIM , Geo-Myung SHIN , Sung-Yun LEE
发明人： Sang-Im YOO , Young-Mi KIM , Geo-Myung SHIN , Sung-Yun LEE
IPC分类号： C03C14/00 , B05D3/02
CPC分类号： C04B35/01 , C04B35/45 , C04B35/462 , C04B35/62655 , C04B35/62675 , C04B35/62807 , C04B35/6281 , C04B35/62813 , C04B35/62815 , C04B35/62821 , C04B35/62823 , C04B35/62886 , C04B2235/3201 , C04B2235/3203 , C04B2235/3206 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/3217 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3229 , C04B2235/3232 , C04B2235/3279 , C04B2235/3281 , C04B2235/3298 , C04B2235/365 , C04B2235/441 , C04B2235/656 , C04B2235/768 , H01G4/1254 , H01G4/30
摘要： The present invention relates to a sintered material for a dielectric substance and a process for preparing the same. Particularly, the present invention is directed to a sintered material for a dielectric substance comprising a core-shell microstructure including a core of a first material and a shell of a second material, wherein a relative dielectric constant of said first material is larger that a relative dielectric constant of said second material.
摘要翻译：本发明涉及一种电介质物质烧结材料及其制备方法。特别地，本发明涉及一种电介质材料用烧结体，其特征在于，具有包含第一材料的芯和第二材料的壳的芯 - 壳微结构，其中，所述第一材料的相对介电常数大于相对所述第二材料的介电常数。

14. 发明申请

US20100302705A1 Capacitors, And Methods Of Forming Capacitors 有权
标题翻译：电容器和形成电容器的方法
公开(公告)号：US20100302705A1
公开(公告)日：2010-12-02
申请号：US12476948
申请日：2009-06-02
申请人： Vassil Antonov , Vishwanath Bhat , Chris Carlson
发明人： Vassil Antonov , Vishwanath Bhat , Chris Carlson
IPC分类号： H01G4/10 , B05D5/12
CPC分类号： H01G4/1272 , H01G4/1209 , H01G4/1218 , H01G4/1227 , H01G4/1245 , H01G4/1254 , H01G4/33
摘要： Some embodiments include methods of forming capacitors. A metal oxide mixture may be formed over a first capacitor electrode. The metal oxide mixture may have a continuous concentration gradient of a second component relative to a first component. The continuous concentration gradient may correspond to a decreasing concentration of the second component as a distance from the first capacitor electrode increases. The first component may be selected from the group consisting of zirconium oxide, hafnium oxide and mixtures thereof; and the second component may be selected from the group consisting of niobium oxide, titanium oxide, strontium oxide and mixtures thereof. A second capacitor electrode may be formed over the first capacitor electrode. Some embodiments include capacitors that contain at least one metal oxide mixture having a continuous concentration gradient of the above-described second component relative to the above-described first component.
摘要翻译：一些实施例包括形成电容器的方法。可以在第一电容器电极上形成金属氧化物混合物。金属氧化物混合物可以具有相对于第一组分的第二组分的连续浓度梯度。连续浓度梯度可以对应于与第一电容器电极的距离增加时第二组分的浓度降低。第一组分可以选自氧化锆，氧化铪及其混合物; 并且第二组分可以选自氧化铌，氧化钛，氧化锶及其混合物。可以在第一电容器电极上形成第二电容器电极。一些实施方案包括相对于上述第一组分含有至少一种具有上述第二组分的连续浓度梯度的金属氧化物混合物的电容器。

15. 发明授权

US07727921B2 Dielectric ceramic composition and monolithic ceramic capacitor 有权
标题翻译：介电陶瓷组合物和单片陶瓷电容器
公开(公告)号：US07727921B2
公开(公告)日：2010-06-01
申请号：US12540824
申请日：2009-08-13
申请人： Toshikazu Takeda
发明人： Toshikazu Takeda
IPC分类号： C04B35/495 , H01G4/12
CPC分类号： H01B3/12 , C04B35/495 , C04B35/62685 , C04B2235/3201 , C04B2235/3203 , C04B2235/3206 , C04B2235/3213 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3239 , C04B2235/3241 , C04B2235/3244 , C04B2235/3251 , C04B2235/3255 , C04B2235/3262 , C04B2235/3272 , C04B2235/3275 , C04B2235/3279 , C04B2235/3284 , C04B2235/3418 , C04B2235/652 , C04B2235/6582 , C04B2235/6584 , C04B2235/6588 , C04B2235/768 , H01G4/1254 , H01G4/30
摘要： A dielectric ceramic composition that is used for a monolithic ceramic capacitor, can be cofired with internal electrodes mainly composed of Ni at a temperature of 1200° C. or less, and has a high resistivity is provided. The dielectric ceramic composition is mainly composed of a tungsten bronze type complex oxide having a composition formula of (K1-xNax)Sr2Nb5O15 (wherein 0≦x
摘要翻译：用于单片陶瓷电容器的电介质陶瓷组合物可以与主要由Ni组成的内部电极在1200℃或更低的温度下共烧，并且具有高电阻率。电介质陶瓷组合物主要由组成式为（K1-xNax）Sr2Nb5O15（其中0＆nlE; x <0.2）的钨青铜型复合氧化物组成，并且还含有0.05〜20摩尔份的R（其中 R是选自Y，La，Pr，Nd，Sm，Eu，Gd，Tb，Dy，Ho，Er，Tm，Yb和Lu中的至少一种）和0.05〜40摩尔份的M M为选自Mn，V，Li，Si，Ni，Cr，Co，Fe，Zn，Mg和Zr中的至少一种）。

16. 发明申请

US20070161497A1 Ferroelectric ceramic composition and applied ferroelectric element including same 有权
标题翻译：铁电陶瓷组合物和应用的铁电元件包括它们
公开(公告)号：US20070161497A1
公开(公告)日：2007-07-12
申请号：US10588147
申请日：2004-11-17
申请人： Yoshifumi Ogiso
发明人： Yoshifumi Ogiso
IPC分类号： H01L41/18 , C04B35/00
CPC分类号： C04B35/495 , C04B35/62675 , C04B35/64 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/3251 , C04B2235/3267 , C04B2235/3291 , C04B2235/3418 , C04B2235/604 , C04B2235/656 , C04B2235/661 , C04B2235/72 , C04B2235/76 , G02F1/0027 , H01G4/1227 , H01G4/1254 , H01L41/18 , H01L41/187
摘要： Disclosed is a ferroelectric ceramic composition that does not contain harmful lead and that have satisfactory sinterability, as well as a nonlinear optical element including the ferroelectric ceramic composition. The ferroelectric ceramic composition includes a main component represented by a general formula (Ba1-x-ySrxCay)Ag1-dNb5O15-d/2 and having a tungsten bronze structure; and auxiliary components represented by a general formula aMnO2+bSiO2 (wherein a and b each represent parts by weight with respect to 100 parts by weight of the main component), wherein x, y, a, b, and d meet expressions 0.1≦x+y≦0.8, a+b≦5, and 0≦d≦0.6.
摘要翻译：公开了不含有害铅并且具有令人满意的烧结性的铁电陶瓷组合物，以及包含铁电陶瓷组合物的非线性光学元件。所述铁电陶瓷组合物包括由通式（Ba 1-xy）Sr x Si y Ag）Ag 1- 具有钨青铜结构的Nb 5 O 15-d / 2 <！ - SIPO

17. 发明授权

US07224573B2 Capacitor having a dielectric ceramic layer 失效
标题翻译：具有介电陶瓷层的电容器
公开(公告)号：US07224573B2
公开(公告)日：2007-05-29
申请号：US10363221
申请日：2001-08-03
申请人： Helmut Sommariva , Christian Hoffmann , Matiaz Valant , Danilo Suvorov
发明人： Helmut Sommariva , Christian Hoffmann , Matiaz Valant , Danilo Suvorov
IPC分类号： H01G4/06
CPC分类号： H01G4/1254 , C04B35/495
摘要： A capacitor includes at least two pairs of opposing electrode layers and an intermediate dielectric layer. The intermediate dielectric layer includes a ceramic material that contains at least two different components existing in separate phases. The at least two different components have a perovskite structure that contains silver in A-positions and niobium and tantalum in B-positions. A composition of a first component and a composition of a second component are such that temperature coefficients of respective permittivities TkεA and TkεB have different signs within a temperature range.
摘要翻译：电容器包括至少两对相对的电极层和中间介电层。中间介电层包括含有分离相中存在的至少两种不同组分的陶瓷材料。所述至少两种不同的组分具有钙钛矿结构，其在A位中含有银，在B位含有铌和钽。第一组分和第二组分的组合物的组成使得各个介电常数T kepsilon A和Tkepsilon B的温度系数在温度范围内具有不同的符号。

18. 发明授权

US06985350B2 Dielectric composition on the basis of barium titanate 失效
标题翻译：基于钛酸钡的介电组成
公开(公告)号：US06985350B2
公开(公告)日：2006-01-10
申请号：US10515082
申请日：2003-05-19
申请人： Detley Hennings , Baby Seriyati Schreinemacher , Uwe Mackens
发明人： Detley Hennings , Baby Seriyati Schreinemacher , Uwe Mackens
IPC分类号： H01G4/06
CPC分类号： C01G33/006 , B32B18/00 , C04B35/4682 , C04B35/6262 , C04B37/04 , C04B2235/3203 , C04B2235/3215 , C04B2235/3234 , C04B2235/3251 , C04B2235/3255 , C04B2235/3262 , C04B2235/3281 , C04B2235/3284 , C04B2235/3409 , C04B2235/3418 , C04B2235/3427 , C04B2235/5409 , C04B2235/5445 , C04B2235/549 , C04B2235/6025 , C04B2235/77 , C04B2235/9607 , C04B2237/704 , H01B3/12 , H01G4/1227 , H01G4/1254 , Y10T29/43
摘要： The invention relates to the dielectric composition on the basis of barium titanate (BaTiO3) that is present with Ba(Zn1/3Nb2/3)O3 in a perovslite structure, which dielectric composition exhibits an average grain size d50 in the range of 0.2 μm to 0.5 μm and a crystallite size d10 below 0.3 μm.
摘要翻译：本发明涉及基于存在于Ba（Zn 1/3 N 2 Nb 3/3）的钛酸钡（BaTiO 3 3）的电介质组合物，这种电介质组合物在0.2μm至0.5μm的范围内表现出平均晶粒尺寸d 50，微晶尺寸d _{10 0.3μm以下。}

19. 发明授权

US06936481B2 Method of depositing dielectric 有权
标题翻译：电介质沉积方法
公开(公告)号：US06936481B2
公开(公告)日：2005-08-30
申请号：US10336923
申请日：2003-01-06
申请人： Claire Louise Wiggins
发明人： Claire Louise Wiggins
IPC分类号： C23C14/34 , C23C14/00 , C23C14/08 , C23C14/58 , H01G4/12 , H01L21/314 , H01L21/316 , H01L21/822 , H01L27/04 , H01L21/00
CPC分类号： C23C14/5826 , C23C14/0036 , C23C14/083 , C23C14/5853 , H01G4/1254 , H01L21/31604
摘要： This invention relates to a method of depositing dielectric on a semiconductor substrate to form part of a capacitor. The method includes reactive sputtering a metal oxide layer from a target of metal onto the substrate wherein the support is biased to induce a DC voltage across the depositing dielectric as it forms. The voltage may be in the range of 200-300V.
摘要翻译：本发明涉及一种在半导体衬底上沉积电介质以形成电容器的一部分的方法。该方法包括将金属氧化物层从金属靶反应溅射到衬底上，其中支撑体在其形成时被偏置以引导跨越沉积电介质的直流电压。电压可能在200-300V的范围内。

20. 发明申请

US20050162809A1 Dielectric composition on the basis of barium titanate 失效
标题翻译：基于钛酸钡的介电组成
公开(公告)号：US20050162809A1
公开(公告)日：2005-07-28
申请号：US10515082
申请日：2003-05-19
申请人： Detley Hennings , Baby Schreinemacher , Uwe Mackens
发明人： Detley Hennings , Baby Schreinemacher , Uwe Mackens
IPC分类号： C04B35/46 , C01G33/00 , C04B35/468 , H01B3/12 , H01G4/12 , H01G4/30 , H01G4/06
CPC分类号： C01G33/006 , B32B18/00 , C04B35/4682 , C04B35/6262 , C04B37/04 , C04B2235/3203 , C04B2235/3215 , C04B2235/3234 , C04B2235/3251 , C04B2235/3255 , C04B2235/3262 , C04B2235/3281 , C04B2235/3284 , C04B2235/3409 , C04B2235/3418 , C04B2235/3427 , C04B2235/5409 , C04B2235/5445 , C04B2235/549 , C04B2235/6025 , C04B2235/77 , C04B2235/9607 , C04B2237/704 , H01B3/12 , H01G4/1227 , H01G4/1254 , Y10T29/43
摘要： The invention relates to the dielectric composition on the basis of barium titanate (BaTiO3) that is present with Ba(Zn1/3Nb2/3)O3 in a perovslite structure, which dielectric composition exhibits an average grain size d50 in the range of 0.2 μm to 0.5 μm and a crystallite size d10 below 0.3 μm.
摘要翻译：本发明涉及基于存在于Ba（Zn 1/3 N 2 Nb 3/3）的钛酸钡（BaTiO 3 3）的电介质组合物，这种电介质组合物在0.2μm至0.5μm的范围内表现出平均晶粒尺寸d 50，微晶尺寸d _{10 0.3μm以下。}

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