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11. 发明申请

US20170261862A1 MASKLESS LITHOGRAPHIC APPARATUS MEASURING ACCUMULATED AMOUNT OF LIGHT 有权
公开(公告)号：US20170261862A1
公开(公告)日：2017-09-14
申请号：US15348173
申请日：2016-11-10
申请人： Samsung Electronics Co., Ltd.
发明人： Ji Young CHU , Shiva Ram Krishna , Tae Hyun Kim , Song Woo Bae , Sang Don Jang , Won Don Joo
IPC分类号： G03F7/20
CPC分类号： G03F7/70391 , G03F7/7005 , G03F7/70133 , G03F7/70208 , G03F7/70275 , G03F7/70291 , G03F7/70383 , G03F7/704 , G03F7/70425 , G03F7/70558 , G03F7/7085
摘要： Maskless lithographic apparatus measuring accumulated amount of light is provided. The maskless lithographic apparatus includes a light source which emits light, a stage on which a substrate is disposed, an optical system which converts the light into a beam spot array including a plurality of columns and a plurality of rows and irradiates the beam spot array onto the stage, a slit to which the beam spot array is irradiated and which passes an nth (n is a natural number) row of the beam spot array, an optical sensor which senses the nth row of the beam spot array which has passed through the slit, and a measuring unit which measures an accumulated amount of light in the nth row of the beam spot array sensed by the optical sensor

12. 发明申请

US20170228493A1 INTEGRATED CIRCUIT MANUFACTURE USING DIRECT WRITE LITHOGRAPHY 审中-公开
公开(公告)号：US20170228493A1
公开(公告)日：2017-08-10
申请号：US15498804
申请日：2017-04-27
申请人： ARM Limited
发明人： Gregory Munson YERIC
IPC分类号： G06F17/50 , G03F7/20
CPC分类号： G06F17/5081 , G03F7/70383 , G03F7/70433 , G06F2217/12 , H01L21/027 , H01L22/14 , H01L22/20
摘要： Integrated circuits are manufactured using a direct write lithography step to at least partially form at least one layer within the integrated circuit. The performance characteristics of an at least partially formed integrated circuit are measured and then the layout design to be applied with a direct write lithography step is varied in dependence upon those performance characteristics. Accordingly, the performance of an individual integrated circuit, wafer of integrated circuits or batch of wafers may be altered.

13. 发明授权

US09690200B2 Optical apparatus and manufacturing method using the same 有权
公开(公告)号：US09690200B2
公开(公告)日：2017-06-27
申请号：US14867292
申请日：2015-09-28
申请人： Samsung Electronics Co., Ltd.
发明人： Sangjoon Hong , Jongjin Lee , Hikuk Lee , Sangdon Jang , Inbae Chang
IPC分类号： G03B27/54 , G03F7/16 , G03F7/20
CPC分类号： G03F7/16 , G03F7/70383 , G03F7/70791 , G03F7/7085
摘要： An optical apparatus and a manufacturing method using the optical apparatus are disclosed. The optical apparatus includes a stage supporting a substrate, first optical systems providing a first light onto the substrate, a gantry supporting the first optical systems to transfer them on the stage, and second optical systems disposed between the gantry and the stage and detecting displacement of the first optical systems. Each of the second optical systems includes a beam source generating a second light different with the first light, and sensor arrays for sensing the second light provided to the first optical systems to detect displacement of the first optical systems.

14. 发明授权

US09672316B2 Integrated circuit manufacture using direct write lithography 有权
公开(公告)号：US09672316B2
公开(公告)日：2017-06-06
申请号：US13944129
申请日：2013-07-17
申请人： ARM LIMITED
发明人： Gregory Munson Yeric
IPC分类号： G06F17/50 , H01L21/027 , G03F7/20 , H01L21/66
CPC分类号： G06F17/5081 , G03F7/70383 , G03F7/70433 , G06F2217/12 , H01L21/027 , H01L22/14 , H01L22/20
摘要： Integrated circuits are manufactured using a direct write lithography step to at least partially form at least one layer within the integrated circuit. The performance characteristics of an at least partially formed integrated circuit are measured and then the layout design to be applied with a direct write lithography step is varied in dependence upon those performance characteristics. Accordingly, the performance of an individual integrated circuit, wafer of integrated circuits or batch of wafers may be altered.

15. 发明授权

US09519226B2 Optical imaging writer system 有权
标题翻译：光学成像系统
公开(公告)号：US09519226B2
公开(公告)日：2016-12-13
申请号：US14203168
申请日：2014-03-10
申请人： Applied Materials, Inc.
发明人： Jang Fung Chen , Thomas Laidig
IPC分类号： G03B27/42 , G03B27/54 , G03F7/20
CPC分类号： G03F7/70383 , G03F7/70275 , G03F7/70291 , G03F7/70508 , G03F7/70791
摘要： System and method for applying mask data patterns to substrate in a lithography manufacturing process are disclosed. In one embodiment, a parallel imaging writer system comprises a plurality of spatial light modulator (SLM) imaging units, and a controller configured to control the plurality of SLM imaging units. Each of the plurality of SLM imaging units includes one or more illumination sources, one or more alignment sources, one or more projection lenses, and a plurality of micro mirrors configured to project light from the one or more illumination sources to the corresponding one or more projection lens. The controller synchronizes movements of the plurality of SLM imaging units with movement of a substrate in writing a mask data to the substrate in a lithography manufacturing process.
摘要翻译：公开了在光刻制造工艺中将掩模数据图案应用于衬底的系统和方法。在一个实施例中，并行成像写入器系统包括多个空间光调制器（SLM）成像单元，以及被配置为控制多个SLM成像单元的控制器。多个SLM成像单元中的每一个包括一个或多个照明源，一个或多个对准源，一个或多个投影透镜，以及多个微反射镜，其配置成将来自一个或多个照明源的光投射到相应的一个或多个投影镜头控制器在光刻制造过程中使多个SLM成像单元的运动与基板的移动同步，从而将掩模数据写入基板。

16. 发明申请

US20160254223A1 Coarse Grid Design Methods and Structures 审中-公开
公开(公告)号：US20160254223A1
公开(公告)日：2016-09-01
申请号：US15150152
申请日：2016-05-09
申请人： Tela Innovations, Inc.
发明人： Michael C. Smayling , Scott T. Becker
IPC分类号： H01L23/528 , H01L21/8234 , H01L27/105 , H01L21/027 , H01L27/02
CPC分类号： H01L23/528 , G03F7/70383 , G06F17/5068 , H01L21/027 , H01L21/823437 , H01L21/823475 , H01L27/0207 , H01L27/105
摘要： A layer of a mask material is deposited on a substrate. A beam of energy is scanned across the mask material in a rasterized linear pattern and in accordance with a scan pitch that is based on a pitch of conductive structure segments to be formed on the substrate. The beam of energy is defined to transform the mask material upon which the beam of energy is incident into a removable state. During scanning the beam of energy across the mask material, the beam of energy is turned on at locations where a conductive structure is to be formed on the substrate, and the beam of energy is turned off at locations where a conductive structure is not to be formed on the substrate.

17. 发明申请

US20160233054A1 SELF-ALIGNED DYNAMIC PATTERN GENERATOR DEVICE AND METHOD OF FABRICATION 有权
标题翻译：自对准动态图案发生器装置及其制造方法
公开(公告)号：US20160233054A1
公开(公告)日：2016-08-11
申请号：US15048004
申请日：2016-02-19
申请人： CORPORATION FOR NATIONAL RESEARCH INITIATIVES
发明人： Michael A. HUFF , Michael PEDERSEN
IPC分类号： H01J37/317 , H01L21/67
CPC分类号： H01J37/3175 , G03F7/2059 , G03F7/70383 , H01J37/3177 , H01J2237/3175 , H01J2237/31754 , H01J2237/31774 , H01J2237/31789 , H01L21/0277 , H01L21/67005
摘要： A dynamic pattern generator (DPG) device and method of making a DPG device are disclosed. The DPG device is used in semiconductor processing tools that require multiple electron-beams, such as direct-write lithography. The device is a self-aligned DPG device that enormously reduces the required tolerances for aligning the various electrode layers, as compared to other design configurations including the non-self-aligned approach and also greatly simplifies the process complexity and cost. A process sequence for both integrated and non-integrated versions of the self-aligned DPG device is described. Additionally, an advanced self-aligned DPG device that eliminates the need for a charge dissipating coating or layer to be used on the device is described. Finally, a fabrication process for the implementation of both integrated and non-integrated versions of the advanced self-aligned DPG device is described.
摘要翻译：公开了一种动态图案发生器（DPG）装置和制造DPG装置的方法。 DPG器件用于需要多个电子束的半导体处理工具，例如直写光刻。与其他设计配置（包括非自对准方法）相比，该器件是一种自对准DPG器件，极大地减少了对准各种电极层所需的公差，并大大简化了工艺的复杂性和成本。描述了自对准DPG设备的集成和非集成版本的处理顺序。另外，描述了一种先进的自对准DPG器件，其不需要在器件上使用的电荷消散涂层或层。最后，描述了用于实现高级自对准DPG设备的集成和非集成版本的制造过程。

18. 发明授权

US09377681B2 Mask manufacturing apparatus and method of manufacturing mask using laser beam 有权
标题翻译：使用激光束制造掩模的掩模制造装置和方法
公开(公告)号：US09377681B2
公开(公告)日：2016-06-28
申请号：US14021489
申请日：2013-09-09
申请人： Samsung Display Co., Ltd.
发明人： Doh-Hyoung Lee , Jun Ho Jo
IPC分类号： B23K26/00 , B23K26/16 , G03F1/76 , G03F7/20 , B23K26/067
CPC分类号： G03F1/76 , B23K26/067 , G03F7/2053 , G03F7/70383 , G03F7/70875
摘要： A mask manufacturing apparatus includes a laser irradiator, a stage, a frame, and a heat spreader sheet. The laser irradiator divides a laser beam into a plurality of sub-laser beams and irradiates the sub-laser beams to a shadow mask material which is placed over a stage. The frame is disposed over the stage to support the shadow mask material. The heat spreader sheet makes contact with the shadow mask material, absorbs heat generated from the shadow mask material, and dissipates the heat to surroundings of the shadow mask material. Accordingly, the shadow mask material is protected from overheating.
摘要翻译：掩模制造装置包括激光照射器，台架，框架和散热片。激光照射器将激光束分割成多个子激光束，并将副激光束照射到放置在台上的荫罩材料。框架设置在舞台上以支撑荫罩材料。散热片与荫罩材料接触，吸收由荫罩材料产生的热量，并将热量散发到荫罩材料的周围。因此，防止荫罩材料过热。

19. 发明授权

US09312103B2 Self-aligned dynamic pattern generator device and method of fabrication 有权
标题翻译：自对准动态图案发生器装置及其制造方法
公开(公告)号：US09312103B2
公开(公告)日：2016-04-12
申请号：US13838453
申请日：2013-03-15
申请人： CORPORATION FOR NATIONAL RESEARCH INITIATIVES
发明人： Michael A. Huff , Michael Pedersen
IPC分类号： A61N5/00 , G03B27/32 , G03B27/54 , H01J37/317 , G03F7/20 , H01L21/027
CPC分类号： H01J37/3175 , G03F7/2059 , G03F7/70383 , H01J37/3177 , H01J2237/3175 , H01J2237/31754 , H01J2237/31774 , H01J2237/31789 , H01L21/0277 , H01L21/67005
摘要： A dynamic pattern generator (DPG) device and method of making a DPG device are disclosed. The DPG device is used in semiconductor processing tools that require multiple electron-beams, such as direct-write lithography. The device is a self-aligned DPG device that enormously reduces the required tolerances for aligning the various electrode layers, as compared to other design configurations including the non-self-aligned approach and also greatly simplifies the process complexity and cost. A process sequence for both integrated and non-integrated versions of the self-aligned DPG device is described. Additionally, an advanced self-aligned DPG device that eliminates the need for a charge dissipating coating or layer to be used on the device is described. Finally, a fabrication process for the implementation of both integrated and non-integrated versions of the advanced self-aligned DPG device is described.
摘要翻译：公开了一种动态图案发生器（DPG）装置和制造DPG装置的方法。 DPG器件用于需要多个电子束的半导体处理工具，例如直写光刻。与其他设计配置（包括非自对准方法）相比，该器件是一种自对准DPG器件，极大地减少了对准各种电极层所需的公差，并大大简化了工艺的复杂性和成本。描述了自对准DPG设备的集成和非集成版本的处理顺序。另外，描述了一种先进的自对准DPG器件，其不需要在器件上使用的电荷消散涂层或层。最后，描述了用于实现高级自对准DPG设备的集成和非集成版本的制造过程。

20. 发明授权

US09176392B2 Lithographic apparatus and device manufacturing method using dose control 有权
标题翻译：平版印刷设备和使用剂量控制的器件制造方法
公开(公告)号：US09176392B2
公开(公告)日：2015-11-03
申请号：US14190147
申请日：2014-02-26
申请人： ASML Netherlands B.V.
发明人： Kars Zeger Troost , Arno Jan Bleeker
IPC分类号： G03F7/20
CPC分类号： G03F7/70058 , G03F7/70275 , G03F7/70291 , G03F7/70383 , G03F7/70425
摘要： A system and method are used to manufacture a device using at least one exposure step. Each exposure step projects a patterned beam of radiation onto a substrate. The patterned beam includes a plurality of pixels. Each pixel delivers a radiation dose no greater than a predetermined normal maximum dose to the target portion in the exposure step and/or at least one selected pixel delivers an increased radiation dose, greater than the normal maximum dose. The increased dose may be delivered to compensate for the effect of a defective element at a known position in the array on a pixel adjacent a selected pixel or compensate for underexposure of the target portion at the location of a selected pixel resulting from exposure of that location to a pixel affected by a known defective element in another exposure step.
摘要翻译：使用系统和方法来制造使用至少一个曝光步骤的装置。每个曝光步骤将图案化的辐射束投射到衬底上。图案化的波束包括多个像素。每个像素在曝光步骤中向目标部分提供不大于预定正常最大剂量的辐射剂量，和/或至少一个所选择的像素传递大于正常最大剂量的增加的辐射剂量。可以递送增加的剂量以补偿阵列中与已选择像素相邻的像素处的已知位置处的有缺陷元件的影响，或者补偿由于该位置的曝光导致的所选像素的位置处的目标部分的曝光不足涉及在另一曝光步骤中受已知缺陷元件影响的像素。

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