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    • 20. 发明授权
    • Method and system for measuring critical dimension and monitoring fabrication uniformity
    • 测量临界尺寸和监测制造均匀性的方法和系统
    • US09100553B2
    • 2015-08-04
    • US13785256
    • 2013-03-05
    • HERMES MICROVISION INC.
    • Wei FangJack JauHong Xiao
    • H04N7/18G06T7/00
    • H04N7/18G06T7/0004G06T7/001G06T2207/10061G06T2207/20016G06T2207/30148H04N7/183
    • A method for measuring critical dimension (CD) includes steps of: scanning at least one area of interest of a die to obtain at least one scanned image; aligning the scanned image to at least one designed layout pattern to identify a plurality of borders within the scanned image; and averaging distances each measured from the border or the plurality of borders of a pattern associated with a specific type of CD corresponding to the designed layout pattern to obtain a value of CD of the die. The value of critical dimensions of dies can be obtained from the scanned image with lower resolution which is obtained by relatively higher scanning speed, so the above-mentioned method can obtain value of CD for every die within entire wafer to monitor the uniformity of the semiconductor manufacturing process within an acceptable inspection time.
    • 用于测量临界尺寸(CD)的方法包括以下步骤:扫描模具的至少一个感兴趣区域以获得至少一个扫描图像; 将扫描图像对准至少一个设计的布局图案,以识别扫描图像内的多个边界; 以及从与设计的布局图案对应的特定类型的CD相关联的图案的边界或多个边界测量的平均距离,以获得模具的CD的值。 可以通过相对较高的扫描速度获得的具有较低分辨率的扫描图像获得模具的临界尺寸的值,因此上述方法可以获得整个晶片内每个管芯的CD值,以监测半导体的均匀性 制造过程在可接受的检验时间内。