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11. 外观设计

USD783692S1 Spin coater/developer 有权
公开(公告)号：USD783692S1
公开(公告)日：2017-04-11
申请号：US29491491
申请日：2014-05-21
申请人： Brewer Science Inc.
设计人： Jim Strothmann , Roger A. Ruesing , Brandon Wilson , Kirk Emory

12. 发明授权

US09349643B2 Apparatus and method for thin wafer transfer 有权
标题翻译：薄晶片传输的装置和方法
公开(公告)号：US09349643B2
公开(公告)日：2016-05-24
申请号：US14229310
申请日：2014-03-28
申请人： Brewer Science Inc.
发明人： Blake Waterworth , Steven Matthew Rich , Molly Hladik , Kirk Emory
IPC分类号： H01L21/687 , H01L21/673 , H01L21/683 , B32B37/14 , B32B38/18 , H01L21/768 , B32B37/26
CPC分类号： H01L21/76898 , H01L21/68707 , H01L21/68714 , H01L21/68757 , H01L21/68785 , Y10T156/11 , Y10T156/1744 , Y10T156/18 , Y10T156/19
摘要： A wafer transfer assembly and method of using the assembly to transfer device wafers between processing tools in a manufacturing process are described herein. The assembly comprises a wafer transfer disk, an end effector configured to receive and support the wafer transfer disk, and an elongated handle extending from the end effector. The wafer transfer disk comprises a wafer-engaging surface configured to support a debonded device wafer placed on the wafer transfer assembly with the device surface adjacent the wafer-engaging surface. The wafer-engaging surface has non-stick properties, and yields a low bonding strength interface between the wafer-engaging surface and device surface. The resulting transfer stack can be transported to other processing tools for additional processing of the debonded device wafer, followed by separating the debonded device wafer and the wafer transfer disk without damaging the device wafer.
摘要翻译：这里描述了晶片转移组件和在制造过程中使用组件在处理工具之间转移装置晶片的方法。组件包括晶片转移盘，配置成接收和支撑晶片转移盘的端部执行器，以及从端部执行器延伸的细长手柄。晶片转移盘包括晶片接合表面，其被配置为支撑位于晶片转移组件上的脱粘器件晶片，其中器件表面邻近晶片接合表面。晶片接合表面具有不粘性，并且在晶片接合表面和器件表面之间产生低粘结强度界面。所得到的转移堆叠可以被运送到其他处理工具以用于附加处理脱粘的器件晶片，随后分离脱粘器件晶片和晶片转移盘而不损坏器件晶片。

13. 发明授权

US09263314B2 Multiple bonding layers for thin-wafer handling 有权
公开(公告)号：US09263314B2
公开(公告)日：2016-02-16
申请号：US13198294
申请日：2011-08-04
申请人： Rama Puligadda , Xing-Fu Zhong , Tony D. Flaim , Jeremy McCutcheon
发明人： Rama Puligadda , Xing-Fu Zhong , Tony D. Flaim , Jeremy McCutcheon
IPC分类号： H01L21/00 , H01L21/683 , H01L21/20 , H01L23/00 , B32B38/00 , B32B38/10 , B32B43/00
CPC分类号： H01L21/6835 , B32B38/0008 , B32B38/10 , B32B43/006 , H01L21/2007 , H01L21/6836 , H01L24/83 , H01L2221/68318 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381 , H01L2924/12041 , H01L2924/12042 , H01L2924/14 , H01L2924/1461 , H01L2924/351 , Y10T156/10 , Y10T156/11 , Y10T156/1126 , Y10T428/24942 , Y10T428/26 , Y10T428/31511 , Y10T428/31551 , Y10T428/31663 , Y10T428/31721 , Y10T428/31725 , Y10T428/31935 , Y10T428/31938 , H01L2924/00
摘要： Multiple bonding layer schemes that temporarily join semiconductor substrates are provided. In the inventive bonding scheme, at least one of the layers is directly in contact with the semiconductor substrate and at least two layers within the scheme are in direct contact with one another. The present invention provides several processing options as the different layers within the multilayer structure perform specific functions. More importantly, it will improve performance of the thin-wafer handling solution by providing higher thermal stability, greater compatibility with harsh backside processing steps, protection of bumps on the front side of the wafer by encapsulation, lower stress in the debonding step, and fewer defects on the front side.

14. 发明授权

US08968989B2 Assist layers for EUV lithography 有权
标题翻译：辅助层进行EUV光刻
公开(公告)号：US08968989B2
公开(公告)日：2015-03-03
申请号：US13682050
申请日：2012-11-20
申请人： Brewer Science Inc.
发明人： Tantiboro Ouattara , Carlton Washburn , Vandana Krishnamurthy , Douglas Guerrero , Aline Collin
IPC分类号： G03F7/26 , G03F7/09 , G03F7/20 , G03F7/11 , B82Y30/00 , B82Y40/00
CPC分类号： G03F7/092 , B82Y30/00 , B82Y40/00 , G03F7/11 , G03F7/2004 , Y10S977/755 , Y10T428/24917
摘要： The present invention provides novel methods of fabricating microelectronics structures, and the resulting structures formed thereby, using EUV lithographic processes. The method involves utilizing an assist layer immediately below the photoresist layer. The assist layer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate. The preferred assist layers are formed from spin-coatable, polymeric compositions. The inventive method allows reduced critical dimensions to be achieved with improved dose-to-size ratios, while improving adhesion and reducing or eliminating pattern collapse issues.
摘要翻译：本发明提供了使用EUV光刻工艺制造微电子结构的新颖方法，以及由此形成的所得结构。该方法包括利用光致抗蚀剂层正下方的辅助层。辅助层可以直接施加到基底上，或者可以将其施加到可施加到基底上的任何中间层。优选的辅助层由可旋涂的聚合物组合物形成。本发明的方法允许通过改进的剂量 - 尺寸比来实现减小的临界尺寸，同时改善粘附性并减少或消除图案塌陷问题。

15. 发明授权

US08852391B2 Method and apparatus for removing a reversibly mounted device wafer from a carrier substrate 有权
标题翻译：从载体衬底去除可逆安装的器件晶片的方法和装置
公开(公告)号：US08852391B2
公开(公告)日：2014-10-07
申请号：US12819680
申请日：2010-06-21
申请人： Jeremy W. McCutcheon , Robert D. Brown
发明人： Jeremy W. McCutcheon , Robert D. Brown
IPC分类号： B32B38/10 , H01L21/683 , H01L21/18 , H01L21/687 , H01L21/67
CPC分类号： H01L21/187 , H01L21/67092 , H01L21/6835 , H01L21/68721 , H01L2221/68318 , H01L2221/6834 , H01L2221/68381 , H01L2221/68386 , Y10S156/93 , Y10S156/941 , Y10T156/1168 , Y10T156/1978 , Y10T156/1989
摘要： New demounting methods and apparatuses for separating temporarily, permanently, or semi-permanently bonded substrates and articles formed from those methods and apparatuses are provided. The methods comprise demounting a device wafer from a carrier wafer or substrate that have only been strongly bonded at their outer perimeters. The edge bonds are chemically, mechanically, acoustically, or thermally softened, dissolved, or disrupted to allow the wafers to be easily separated with very low forces and at or near room temperature at the appropriate stage in the fabrication process. A clamp for facilitating separation of the bonded substrates is also provided.
摘要翻译：提供了用于分离由这些方法和装置形成的临时，永久或半永久粘合的基底和物品的新的拆卸方法和装置。这些方法包括从仅在其外周强度结合的载体晶片或基底上拆卸器件晶片。边缘粘合是化学，机械，声学或热软化，溶解或破坏，以允许晶片在非常低的力和在室温或在室温附近在制造过程中的适当阶段容易地分离。还提供了一种用于便于分离键合衬底的夹具。

16. 发明申请

US20140225252A1 ON-TRACK REVERSE LITHOGRAPHY TO THIN MASK FOR FABRICATION OF DARK-FIELD FEATURES 审中-公开
标题翻译： ON-TRACK REVERSE LITHOGRAPHY TO THIN MASK FOR BUGICATION OF DARK-FIELD FEATURES
公开(公告)号：US20140225252A1
公开(公告)日：2014-08-14
申请号：US13765429
申请日：2013-02-12
申请人： BREWER SCIENCE INC.
发明人： Qin Lin , Daniel M. Sullivan , Tony D. Flaim , Yubao Wang , Jamie Lea Storie
IPC分类号： H01L21/308 , H01L23/498 , H01L21/768
CPC分类号： H01L23/49811 , H01L21/02126 , H01L21/02282 , H01L21/0337 , H01L21/31116 , H01L21/31133 , H01L21/31138 , H01L21/31144 , H01L21/76816 , H01L2924/0002 , H01L2924/00
摘要： A reversal lithography approach is disclosed in which dark-field features are created on microelectronic substrates using bright-field lithography processes and a pattern reversal method. A wafer stack having a patterned imaging layer is provided that has a plurality of features formed thereon. A pattern reversal composition is applied to the patterned imaging layer overcoating the features, followed by wet etch-back of partially cured portions of the composition to expose the tops of the features. The imaging layer is then removed resulting in reversal of the pattern into the pattern reversal composition. This reversed pattern is then transferred into subsequent layers
摘要翻译：公开了一种反转光刻方法，其中使用亮场光刻工艺和图案反转方法在微电子基板上产生暗场特征。提供具有图案化成像层的晶片叠层，其具有形成在其上的多个特征。将图案反转组合物施加到覆盖特征的图案化成像层上，随后湿法蚀刻组合物的部分固化部分以暴露特征的顶部。然后去除成像层，导致图案反转成图案反转组合物。然后将该反转图案转移到随后的层中

17. 发明申请

US20140162034A2 MULTIPLE BONDING LAYERS FOR THIN-WAFER HANDLING 有权
公开(公告)号：US20140162034A2
公开(公告)日：2014-06-12
申请号：US13198294
申请日：2011-08-04
申请人： Rama Puligadda , Xing-Fu Zhong , Tony D. Flaim , Jeremy McCutcheon
发明人： Rama Puligadda , Xing-Fu Zhong , Tony D. Flaim , Jeremy McCutcheon
IPC分类号： B32B27/32 , B32B7/02 , B32B27/40 , B32B27/36 , B32B27/00 , H01L21/30 , B32B27/38
CPC分类号： H01L21/6835 , B32B38/0008 , B32B38/10 , B32B43/006 , H01L21/2007 , H01L21/6836 , H01L24/83 , H01L2221/68318 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381 , H01L2924/12041 , H01L2924/12042 , H01L2924/14 , H01L2924/1461 , H01L2924/351 , Y10T156/10 , Y10T156/11 , Y10T156/1126 , Y10T428/24942 , Y10T428/26 , Y10T428/31511 , Y10T428/31551 , Y10T428/31663 , Y10T428/31721 , Y10T428/31725 , Y10T428/31935 , Y10T428/31938 , H01L2924/00
摘要： Multiple bonding layer schemes that temporarily join semiconductor substrates are provided. In the inventive bonding scheme, at least one of the layers is directly in contact with the semiconductor substrate and at least two layers within the scheme are in direct contact with one another. The present invention provides several processing options as the different layers within the multilayer structure perform specific functions. More importantly, it will improve performance of the thin-wafer handling solution by providing higher thermal stability, greater compatibility with harsh backside processing steps, protection of bumps on the front side of the wafer by encapsulation, lower stress in the debonding step, and fewer defects on the front side.

18. 发明申请

US20140138588A1 HIGHLY SOLUBLE CARBON NANOTUBES WITH ENHANCED CONDUCTIVITY 有权
标题翻译：具有增强电导率的高度可溶性碳纳米管
公开(公告)号：US20140138588A1
公开(公告)日：2014-05-22
申请号：US14164156
申请日：2014-01-25
申请人： Brewer Science Inc.
发明人： Christopher Landorf , Carissa Jones , Marriana Nelson
IPC分类号： C09D11/00
CPC分类号： C09D11/52 , B82Y30/00 , B82Y40/00 , C01B32/174 , H01B1/24
摘要： New methods for preparing carbon nanotube films having enhanced properties are provided. The method broadly provides reacting carbon nanotubes (CNTs) and compounds comprising a polyaromatic moieties in the presence a strong acid. During the reaction process, the polyaromatic moieties noncovalently bond with the carbon nanotubes. Additionally, the functionalizing moieties are further functionalized by the strong acid. This dual functionalization allows the CNTs to be dispersed at concentrations greater than 0.5 g/L in solution without damaging their desirable electronic and physical properties. The resulting solutions are stable on the shelf for months without observable bundling, and can be incorporated into solutions for printing conductive traces by a variety of means, including inkjet, screen, flexographic, gravure printing, or spin and spray coating.
摘要翻译：提供了制备具有增强性能的碳纳米管膜的新方法。该方法广泛地提供了在存在强酸的情况下使碳纳米管（CNT）和包含多芳族部分的化合物。在反应过程中，多芳族部分与碳纳米管非共价结合。此外，官能化部分进一步由强酸官能化。这种双官能化允许CNT在溶液中以大于0.5g / L的浓度分散，而不损害其所需的电子和物理性质。所得到的溶液在搁板上稳定几个月，不需要可观察到的捆扎，并且可以通过各种方式（包括喷墨，筛网，柔性版，凹版印刷或旋涂和喷涂）结合到用于印刷导电迹线的溶液中。

19. 发明申请

US20140124898A1 CVD-FREE, SCALABLE PROCESSES FOR THE PRODUCTION OF SILICON MICRO- AND NANOSTRUCTURES 有权
标题翻译：无CVD，生产硅微结构和纳米结构的可扩展工艺
公开(公告)号：US20140124898A1
公开(公告)日：2014-05-08
申请号：US14076094
申请日：2013-11-08
申请人： Brewer Science Inc.
发明人： Jyoti K. Malhotra , Jeff Leith , Curtis Planje
IPC分类号： H01L21/308 , G03F1/22 , H01L29/06
CPC分类号： H01L29/0676 , B81C1/00111 , B81C99/008 , B82Y10/00 , B82Y40/00 , G03F1/50 , G03F7/0035 , H01L21/0259 , H01L21/02606 , H01L29/0665 , H01L29/0669 , H01L51/0048
摘要： Manufacturing-friendly and scalable methods for the production of silicon micro- and nanostructures, including silicon nanotubes, are described. The inventive methods utilize conventional integrated circuit and MEMS manufacturing processes, including spin-coating, photolithography, wet and dry silicon etching, and photoassisted electrochemical etch processes. The invention also provides a novel mask, for maximizing the number of tubes obtained per surface area unit of the silicon substrate on which the tubes are built. The resulting tubes have thick and straight outer walls, as well as high aspect ratios.
摘要翻译：描述了用于生产硅微纳米结构（包括硅纳米管）的制造友好且可扩展的方法。本发明的方法利用传统的集成电路和MEMS制造工艺，包括旋涂，光刻，湿和干硅蚀刻以及光辅助电化学蚀刻工艺。本发明还提供了一种新颖的掩模，用于最大化在其上构建管的硅衬底的每表面积单位获得的管的数目。所得到的管具有厚而直的外壁以及高纵横比。

20. 发明授权

US08647809B2 Metal-oxide films from small molecules for lithographic applications 有权
标题翻译：用于光刻应用的小分子的金属氧化物膜
公开(公告)号：US08647809B2
公开(公告)日：2014-02-11
申请号：US13178301
申请日：2011-07-07
申请人： Daniel M. Sullivan , Charles J. Neef , Yubao Wang , Tantiboro Ouattara
发明人： Daniel M. Sullivan , Charles J. Neef , Yubao Wang , Tantiboro Ouattara
IPC分类号： G03F7/00 , G03F7/004
CPC分类号： H01L21/0276 , C08G77/58 , C09D183/14 , G03F7/0752 , G03F7/09 , G03F7/091 , G03F7/094 , H01L21/0332 , Y10T428/24802
摘要： Metal-oxide films for lithographic applications are provided. The films are formed from compositions comprising metal-oxide precursor compounds including metals and metalloids other than silicon. These films are easily produced and can be modified with a variety of ligands, including alkoxides, phenoxides, carboxylates, beta-diketones, and beta-ketoesters.
摘要翻译：提供了用于光刻应用的金属氧化物膜。该膜由包含金属和氧化物前体化合物的组合物形成，包括除硅以外的金属和准金属。这些膜容易生产，并且可以用各种配体进行改性，包括醇盐，苯氧化物，羧酸盐，β-二酮和β-酮酯。

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