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11. 发明申请

US20180076070A1 PLASMA-TREATMENT DEVICE FOR WAFERS 审中-公开
公开(公告)号：US20180076070A1
公开(公告)日：2018-03-15
申请号：US15563647
申请日：2016-04-01
申请人： Wilfried Lerch
发明人： Michael Klick , Ralf Rothe , Wilfried Lerch , Johannes Rehli
IPC分类号： H01L21/673 , C23C16/509 , H01J37/32
CPC分类号： H01L21/67313 , C23C16/509 , H01J37/32082 , H01J37/32577 , H01J37/32715 , H01L21/67326
摘要： In order to provide an improved introduction of high-frequency waves into a wafer boat, a plasma treatment apparatus for wafers, in particular for semiconductor wafers for semiconductor or photovoltaic applications, is provided, wherein the apparatus comprises a processing room for holding a wafer boat, the wafer boat having a plurality of electrically conductive carrier elements for the wafers, means of controlling or regulating a process gas atmosphere in the processing room, and at least one voltage source which can be connected with the wafer boat by means of a cable fed into the processing room. The cable is in the form of a coaxial cable with an inner conductor and an outer conductor, and a dielectric is provided between the inner conductor and the outer conductor in such a way that, when a high-frequency voltage is applied, the propagation speed and the wavelength of the electromagnetic wave in the coaxial cable is reduced as opposed to the propagation speed and the wavelength of the electromagnetic wave in a vacuum.

12. 发明申请

US20140179117A1 METHOD FOR FORMING A LAYER ON A SUBSTRATE AT LOW TEMPERATURES 有权
标题翻译：在低温下在基材上形成层的方法
公开(公告)号：US20140179117A1
公开(公告)日：2014-06-26
申请号：US14131943
申请日：2012-07-12
申请人： Jurgen Niess , Wilfried Lerch , Wilhelm Kegel , Alexander Gschwandtner
发明人： Jurgen Niess , Wilfried Lerch , Wilhelm Kegel , Alexander Gschwandtner
IPC分类号： H01L21/02
CPC分类号： H01L21/02238 , C23C8/10 , C23C8/36 , C23C8/38 , H01J37/32192 , H01J37/3222 , H01L21/02164 , H01L21/02252 , H01L21/67115 , H01L31/02167 , H01L31/18 , Y02E10/50
摘要： A method for forming an oxide layer on a substrate is described, wherein a plasma is generated adjacent to at least one surface of the substrate by means of microwaves from a gas containing oxygen, wherein the microwaves are coupled into the gas by a magnetron via at least one microwave rod, which is arranged opposite to the substrate and comprises an outer conductor and an inner conductor. During the formation of the oxide layer, the mean microwave power density is set to P=0.8-10 W/cm2, the plasma duration is set to t=0.1 to 600 s, the pressure is set to p=2.67-266.64 Pa (20 to 2000 mTorr) and a distance between substrate surface and microwave rod is set to d=5-120 mm. The above and potentially further process conditions are matched to each other such that the substrate is held at a temperature below 200° C. and an oxide growth is induced on the surface of the substrate facing the plasma.
摘要翻译：描述了在衬底上形成氧化物层的方法，其中通过来自含氧气体的微波在邻近于衬底的至少一个表面处产生等离子体，其中微波通过磁控管通过至少一个微波棒，其布置成与衬底相对并且包括外部导体和内部导体。在形成氧化物层期间，将平均微波功率密度设定为P = 0.8-10W / cm 2，将等离子体持续时间设定为t = 0.1〜600s，将压力设定为p = 2.67-266.64Pa（ 20〜2000mTorr），将基板表面与微波棒之间的距离设定为d = 5-120mm。上述和潜在的另外的工艺条件彼此匹配，使得衬底保持在低于200℃的温度，并且在面向等离子体的衬底的表面上诱导氧化物生长。

13. 发明授权

US08716153B2 Device and method for producing dielectric layers in microwave plasma 有权
标题翻译：用于在微波等离子体中制造电介质层的装置和方法
公开(公告)号：US08716153B2
公开(公告)日：2014-05-06
申请号：US13057841
申请日：2009-08-04
申请人： Wilfried Lerch , Zsolt Nenyel , Thomas Theiler
发明人： Wilfried Lerch , Zsolt Nenyel , Thomas Theiler
IPC分类号： H01L21/31
CPC分类号： H01J37/32211 , C23C8/36 , H01J37/32192 , H01J2237/2001
摘要： A device for producing a microwave plasma, and a device and a method for treating semiconductor substrates with a microwave plasma, the microwave plasma device comprising at least one electrode (21, 22, 23), an electrode (21, 22, 23) comprising a coaxial inner conductor (21) made of electrically conductive material and a coaxial outer conductor (22) made of electrically conductive material and surrounding the inner conductor at least partially and being disposed at a distance thereto, and a plasma ignition device (23) that is connected to the coaxial inner conductor (21), characterized in that the coaxial outer conductor (22) comprises at least one first partial region (31) in which it completely surrounds the coaxial inner conductor (21) along the longitudinal axis thereof and comprises at least one further partial region (32) in which it surrounds the coaxial inner conductor (21) partially such that microwave radiation generated by the microwave generator (20) can exit in the at least one further partial region (32) substantially perpendicular to the longitudinal axis of the coaxial inner conductor (21).
摘要翻译：一种微波等离子体的制造装置，以及利用微波等离子体处理半导体基板的装置和方法，所述微波等离子体装置包括至少一个电极（21,22,23），电极（21,22,23），包括由导电材料制成的同轴内部导体（21）和由导电材料制成并且至少部分地围绕内部导体并且远离其设置的同轴外部导体（22），以及等离子体点火装置（23），其中连接到所述同轴内导体（21），其特征在于，所述同轴外导体（22）包括至少一个第一部分区域（31），其中所述第一部分区域沿着其纵向轴线完全围绕所述同轴内导体（21），并且包括至少一个另外的部分区域（32），其中它部分地围绕同轴内部导体（21），使得由微波发生器（20）产生的微波辐射可以在同一出口基本上垂直于同轴内导体（21）的纵向轴线的另一部分区域（32）。

14. 发明申请

US20110217849A1 DEVICE AND METHOD FOR PRODUCING DIELECTRIC LAYERS IN MICROWAVE PLASMA 有权
标题翻译：微波等离子体生产介质层的装置和方法
公开(公告)号：US20110217849A1
公开(公告)日：2011-09-08
申请号：US13057841
申请日：2009-08-04
申请人： Wilfried Lerch , Zsolt Nenyel , Thomas Theiler
发明人： Wilfried Lerch , Zsolt Nenyel , Thomas Theiler
IPC分类号： H01L21/02 , H01J37/32 , C23C16/458 , C23C16/46
CPC分类号： H01J37/32211 , C23C8/36 , H01J37/32192 , H01J2237/2001
摘要： A device for producing a microwave plasma, and a device and a method for treating semiconductor substrates with a microwave plasma, the microwave plasma device comprising at least one electrode (21, 22, 23), an electrode (21, 22, 23) comprising a coaxial inner conductor (21) made of electrically conductive material and a coaxial outer conductor (22) made of electrically conductive material and surrounding the inner conductor at least partially and being disposed at a distance thereto, and a plasma ignition device (23) that is connected to the coaxial inner conductor (21), characterized in that the coaxial outer conductor (22) comprises at least one first partial region (31) in which it completely surrounds the coaxial inner conductor (21) along the longitudinal axis thereof and comprises at least one further partial region (32) in which it surrounds the coaxial inner conductor (21) partially such that microwave radiation generated by the microwave generator (20) can exit in the at least one further partial region (32) substantially perpendicular to the longitudinal axis of the coaxial inner conductor (21).
摘要翻译：一种微波等离子体的制造装置，以及利用微波等离子体处理半导体基板的装置和方法，所述微波等离子体装置包括至少一个电极（21,22,23），电极（21,22,23），包括由导电材料制成的同轴内部导体（21）和由导电材料制成并且至少部分地围绕内部导体并且远离其设置的同轴外部导体（22），以及等离子体点火装置（23），其中连接到所述同轴内导体（21），其特征在于，所述同轴外导体（22）包括至少一个第一部分区域（31），其中所述第一部分区域沿着其纵向轴线完全围绕所述同轴内导体（21），并且包括至少一个另外的部分区域（32），其中它部分地围绕同轴内部导体（21），使得由微波发生器（20）产生的微波辐射可以在同一出口基本上垂直于同轴内导体（21）的纵向轴线的另一部分区域（32）。

15. 发明授权

US5935650A Method of oxidation of semiconductor wafers in a rapid thermal processing (RTP) system 失效
标题翻译：在快速热处理（RTP）系统中半导体晶片的氧化方法
公开(公告)号：US5935650A
公开(公告)日：1999-08-10
申请号：US953590
申请日：1997-10-17
申请人： Wilfried Lerch , Georg Roters , Peter Muenzinger , Roland Mader
发明人： Wilfried Lerch , Georg Roters , Peter Muenzinger , Roland Mader
IPC分类号： H01L21/314 , H01L21/316 , C23C16/00 , H01L21/02
CPC分类号： H01L21/31662 , H01L21/0223 , H01L21/02238 , H01L21/02255 , H01L21/31658
摘要： A method of producing a film on the surface of a semiconductor wafer in an RTP system, comprising: a) rapidly processing the wafer at a first temperature T.sub.1 in an atmosphere containing a substantial vapor pressure of a first reactive gas; then b) rapidly processing the wafer at a second temperature T.sub.2 in an atmosphere substantially free of the first reactive gas is described.
摘要翻译：一种在RTP系统中的半导体晶片的表面上制造膜的方法，包括：a）在包含第一反应气体的实质蒸气压的气氛中，以第一温度T1快速处理晶片; 然后b）在基本上不含第一反应气体的气氛中在第二温度T2下快速处理晶片。

16. 发明授权

US5727017A Method and apparatus for determining emissivity of semiconductor material 失效
标题翻译：用于确定半导体材料的辐射率的方法和装置
公开(公告)号：US5727017A
公开(公告)日：1998-03-10
申请号：US632364
申请日：1996-04-10
申请人： Michael Maurer , Wilfried Lerch , Alexander Gschwandtner
发明人： Michael Maurer , Wilfried Lerch , Alexander Gschwandtner
IPC分类号： G01J5/00 , G01J5/10 , G01N25/00
CPC分类号： G01J5/08 , G01J5/0003 , G01J5/0007 , G01J5/0896
摘要： A method and apparatus for measuring the emission coefficient of a semiconductor material for light of wavelength .lambda. having photon energy less than the semiconductor bandgap energy is introduced. The reflection coefficient for the light of wavelength .lambda. is measured while the semiconductor material is being irradiated with sufficient light having photon energy greater than the bandgap energy that the semiconductor material transmits little light of wavelength .lambda., and the emission coefficient is calculated from the measured reflection coefficient. The temperature of the semiconductor material can be calculated from the emission coefficient and the measured intensity of the thermally emitted radiation of wavelength .lambda..
摘要翻译：引入了用于测量具有小于半导体带隙能量的光子能量的波长λ的光的半导体材料的发射系数的方法和装置。在半导体材料被足够的光照射的情况下测量波长λ的光的反射系数，该足够的光具有比半导体材料透射较小的波长λ的光的带隙能量大的带隙能量，并且从测量的反射计算发射系数系数。半导体材料的温度可以根据发射系数和波长λ的热辐射辐射的测量强度来计算。

17. 发明申请

US20180076071A1 WAFER BOAT AND TREATMENT APPARATUS FOR WAFERS 审中-公开
公开(公告)号：US20180076071A1
公开(公告)日：2018-03-15
申请号：US15563662
申请日：2016-03-31
申请人： Wilfried Lerch
发明人： Michael Klick , Ralf Rothe , Wilfried Lerch , Johannes Rehli
IPC分类号： H01L21/673 , H01J37/32 , H01L21/67 , H01L21/324 , C23C16/458 , C23C16/505 , H01L21/677
CPC分类号： H01L21/67313 , C23C16/4587 , C23C16/505 , H01J37/32715 , H01J37/32724 , H01J37/32733 , H01J37/32908 , H01J37/3299 , H01L21/02123 , H01L21/324 , H01L21/67109 , H01L21/67383 , H01L21/67754 , H01L21/67757 , H01L21/68771
摘要： A wafer boat is described for the plasma treatment of disc-shaped wafers, in particular semiconductor wafers for semiconductor or photovoltaic applications, which has a plurality of plates positioned parallel to each other made of an electrically conductive material which have at least one carrier for a wafer on each side which faces another plate and define a receiving space for the wafers on the plates. The wafer boat also has a plurality of spacer elements, which are positioned between directly adjacent plates in order to position the plates parallel to each other, wherein the spacer elements are electrically conductive. Also a plasma treatment apparatus for wafers and a method for the plasma treatment of wafers is described. The apparatus has a process chamber for the reception of a wafer boat of the previously described type, means for controlling or regulating a process gas atmosphere in the process chamber and at least one voltage source, which is connectable to the plates of the wafer boat in a suitable manner, in order to apply an electrical voltage between directly adjacent plates of the wafer boat wherein the at least one voltage source is suitable for applying at least one DC-voltage or at least one low-frequency AC-voltage and at least one high-frequency AC-voltage. In the method, during the heating phase a DC-voltage or a low-frequency AC-voltage is applied to the plates of the wafer boat in such a way that the spacer elements heat up by current flowing therethrough, and during a processing phase a high-frequency AC-voltage is applied to the plates of the wafer boat, in order to generate a plasma between the wafers inserted into them.

18. 发明授权

US09252011B2 Method for forming a layer on a substrate at low temperatures 有权
标题翻译：在低温下在基材上形成层的方法
公开(公告)号：US09252011B2
公开(公告)日：2016-02-02
申请号：US14131943
申请日：2012-07-12
申请人： Juergen Niess , Wilfried Lerch , Wilhelm Kegel , Alexander Gschwandtner
发明人： Juergen Niess , Wilfried Lerch , Wilhelm Kegel , Alexander Gschwandtner
IPC分类号： H01L21/31 , H01L21/02 , C23C8/10 , C23C8/36 , C23C8/38 , H01J37/32 , H01L21/67 , H01L31/0216 , H01L31/18
CPC分类号： H01L21/02238 , C23C8/10 , C23C8/36 , C23C8/38 , H01J37/32192 , H01J37/3222 , H01L21/02164 , H01L21/02252 , H01L21/67115 , H01L31/02167 , H01L31/18 , Y02E10/50
摘要： A method for forming an oxide layer on a substrate is described, wherein a plasma is generated adjacent to at least one surface of the substrate by means of microwaves from a gas containing oxygen, wherein the microwaves are coupled into the gas by a magnetron via at least one microwave rod, which is arranged opposite to the substrate and comprises an outer conductor and an inner conductor. During the formation of the oxide layer, the mean microwave power density is set to P=0.8-10 W/cm2, the plasma duration is set to t=0.1 to 600 s, the pressure is set to p=2.67-266.64 Pa (20 to 2000 mTorr) and a distance between substrate surface and microwave rod is set to d=5-120 mm. The above and potentially further process conditions are matched to each other such that the substrate is held at a temperature below 200° C. and an oxide growth is induced on the surface of the substrate facing the plasma.
摘要翻译：描述了在衬底上形成氧化物层的方法，其中通过来自含氧气体的微波在邻近于衬底的至少一个表面处产生等离子体，其中微波通过磁控管通过至少一个微波棒，其布置成与衬底相对并且包括外部导体和内部导体。在形成氧化物层期间，将平均微波功率密度设定为P = 0.8-10W / cm 2，将等离子体持续时间设定为t = 0.1〜600s，将压力设定为p = 2.67-266.64Pa（ 20〜2000mTorr），将基板表面与微波棒之间的距离设定为d = 5-120mm。上述和潜在的另外的工艺条件彼此匹配，使得衬底保持在低于200℃的温度，并且在面向等离子体的衬底的表面上诱导氧化物生长。

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