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11. 发明授权

US07009714B2 Method of dry etching a sample and dry etching system 失效
标题翻译：干法蚀刻样品和干蚀刻系统的方法
公开(公告)号：US07009714B2
公开(公告)日：2006-03-07
申请号：US10372838
申请日：2003-02-26
申请人： Yutaka Ohmoto , Ryouji Fukuyama , Mamoru Yakushiji
发明人： Yutaka Ohmoto , Ryouji Fukuyama , Mamoru Yakushiji
IPC分类号： G01B9/02
CPC分类号： H01L21/31138 , G01B11/0625 , G01B11/0683 , G01N21/4788 , G01N21/9501 , H01L21/67069
摘要： A process recipe is controlled by processing reflection interference light on the surface of a wafer with a signal and etching is carried out by suppressing an increase in the surface roughness of the wafer during etching. That is, a dry etching method for use in a dry etching system comprising means of treating a sample by generating plasma in a vacuum process chamber and monitor means of monitoring the reflection interference light of the sample to be treated, the method comprising the step of detecting the spectrum of reflection interference light on the surface of the sample to be treated, the step of obtaining a residual from curve fit between a theoretical value estimated from the film reflection model of the surface of the wafer and the spectrum of reflection interference light, and the step of judging whether the residual from the curve fit falls within a predetermined value.
摘要翻译：通过用信号处理晶片表面上的反射干涉光来控制工艺配方，并且通过抑制蚀刻期间晶片的表面粗糙度的增加来进行蚀刻。也就是说，干蚀刻系统中使用的干法蚀刻方法，包括在真空处理室中产生等离子体处理样品和监测待处理样品的反射干涉光的监测装置的方法，该方法包括以下步骤：检测待处理样品的表面上的反射干涉光的光谱，从由晶片表面的膜反射模型估计出的理论值与反射干涉光的光谱之间的曲线拟合的残差获得的步骤，以及判断曲线拟合的残差是否落在预定值内的步骤。

12. 发明授权

US09150967B2 Plasma processing apparatus and sample stage 有权
标题翻译：等离子体处理装置和样品台
公开(公告)号：US09150967B2
公开(公告)日：2015-10-06
申请号：US12854242
申请日：2010-08-11
申请人： Tomoyuki Watanabe , Mamoru Yakushiji , Yutaka Ohmoto
发明人： Tomoyuki Watanabe , Mamoru Yakushiji , Yutaka Ohmoto
IPC分类号： C23C4/00 , C23C28/00 , C23C4/02
CPC分类号： C23C28/00 , C23C4/02
摘要： A plasma processing apparatus includes a metallic basic material arranged in a sample stage, a dielectric film of dielectric material disposed on an upper surface of the basic material, the dielectric film being formed through a plasma spray process; a film-shaped heater disposed in the dielectric film, the heater being formed through a plasma spray process; an adhesive layer arranged on the dielectric film; a sintered ceramic plate having a thickness ranging from about 0.2 mm to about 0.4 mm, the sintered ceramic plate being adhered onto the dielectric film by the adhesive layer; a sensor disposed in the basic material for sensing a temperature; and a controller for receiving an output from the sensor and adjusting quantity of heat generated by the heater.
摘要翻译：等离子体处理装置包括布置在样品台中的金属基材，设置在基材的上表面上的电介质材料的电介质膜，电介质膜通过等离子体喷涂法形成; 设置在电介质膜中的膜状加热器，加热器通过等离子体喷涂工艺形成; 布置在电介质膜上的粘合剂层; 烧结陶瓷板的厚度范围为约0.2mm至约0.4mm，烧结陶瓷板通过粘合剂层粘附到电介质膜上; 设置在基本材料中以感测温度的传感器; 以及控制器，用于接收来自传感器的输出并调节由加热器产生的热量。

13. 发明申请

US20080023145A1 PLASMA PROCESSING APPARATUS AND METHOD 失效
标题翻译：等离子体加工设备和方法
公开(公告)号：US20080023145A1
公开(公告)日：2008-01-31
申请号：US11865836
申请日：2007-10-02
申请人： Yutaka Ohmoto , Hironobu Kawahara , Ken Yoshioka , Kazue Takahashi , Saburou Kanai
发明人： Yutaka Ohmoto , Hironobu Kawahara , Ken Yoshioka , Kazue Takahashi , Saburou Kanai
IPC分类号： H01L21/306
CPC分类号： H01J37/32192 , H01J37/321 , H01J37/32559 , H01J37/32623 , H01J37/32706
摘要： A plasma processing apparatus includes a high-frequency power source for applying bias power to an electrode on which a substrate is disposed, an insulating layer formed on a surface of the electrode, a conductive material buried within the insulating layer, a feeder line connecting the high-frequency power source and the conductive material, a variable capacitor provided in the feeder line, and a direct current power source connected to the electrode at a position between the electrode and the high-frequency power source. One portion of the insulating layer where the conductive material is buried formed on an outer part of the electrode has a thickness which is greater than a thickness of another portion of the insulating layer where the conducting material is not buried and which extends from a central part of the electrode to the one portion of the insulating layer.
摘要翻译：等离子体处理装置包括用于向其上设置基板的电极施加偏置功率的高频电源，形成在电极的表面上的绝缘层，埋在绝缘层内的导电材料，连接高频电源和导电材料，设置在馈电线路中的可变电容器，以及在电极和高频电源之间的位置处连接到电极的直流电源。绝缘层的绝缘层的一部分形成在电极的外部部分上，其厚度大于绝缘层的另一部分的厚度，其中导电材料不被埋入，并且其厚度从中心部分延伸的绝缘层的一部分。

14. 发明授权

US06759338B2 Plasma processing apparatus and method 失效
标题翻译：等离子体处理装置及方法
公开(公告)号：US06759338B2
公开(公告)日：2004-07-06
申请号：US09795487
申请日：2001-03-01
申请人： Yutaka Ohmoto , Hironobu Kawahara , Ken Yoshioka , Kazue Takahashi , Saburou Kanai
发明人： Yutaka Ohmoto , Hironobu Kawahara , Ken Yoshioka , Kazue Takahashi , Saburou Kanai
IPC分类号： H01L21302
CPC分类号： H01J37/32192 , H01J37/321 , H01J37/32559 , H01J37/32623 , H01J37/32706
摘要： A plasma processing apparatus and a plasma processing method for processing a wafer of a large diameter to produce a high speed semiconductor circuit at a high yield are provided. A thickness of an insulating film formed on a surface of an electrode opposing to a substrate to be processed is locally changed, an electrode is provided in the insulating film and a bypassed bias current is supplied to the electrode. An electrode is provided in an insulating film on a surface of the electrode opposing to a material adjacent to the substrate to be processed and a bypassed bias current is supplied to the electrode.
摘要翻译：提供了一种等离子体处理装置和等离子体处理方法，用于处理大直径的晶片以高产率生产高速半导体电路。在与被处理基板相对的电极的表面上形成的绝缘膜的厚度局部变化，在绝缘膜中设置电极，向电极提供旁路偏置电流。在电极的表面上设置有与被处理基板相邻的材料的绝缘膜上的电极，向电极供给旁路偏置电流。

15. 发明授权

US06649021B2 Apparatus and method for plasma processing high-speed semiconductor circuits with increased yield 失效
公开(公告)号：US06649021B2
公开(公告)日：2003-11-18
申请号：US09908844
申请日：2001-07-20
申请人： Yutaka Ohmoto , Hironobu Kawahara , Ken Yoshioka , Kazue Takahashi , Saburou Kanai
发明人： Yutaka Ohmoto , Hironobu Kawahara , Ken Yoshioka , Kazue Takahashi , Saburou Kanai
IPC分类号： H01L2100
CPC分类号： H01J37/32706
摘要： A plasma processing apparatus processes high-speed semiconductor circuits by using plasma with an increased yield. The plasma processing apparatus has a vacuum vessel including an exhaust device, a starting material gas supplying device, an electrode for installing a workpiece (wafer) and a device for applying radio frequency power to the wafer. This apparatus converts the starting material gas to plasma inside the vacuum vessel and plasma-processes a wafer surface, wherein an insulating film is interposed between the electrode for installing the wafer and the wafer and has a conductive material at a part thereof, and the conductive material is electrically grounded through an impedance regulating circuit.

16. 发明授权

US06867144B2 Apparatus and method for plasma processing high-speed semiconductor circuits with increased yield 失效
标题翻译：用于等离子体处理高速半导体电路的装置和方法，其产量增加
公开(公告)号：US06867144B2
公开(公告)日：2005-03-15
申请号：US10138635
申请日：2002-05-06
申请人： Yutaka Ohmoto , Hironobu Kawahara , Ken Yoshioka , Kazue Takahashi , Saburou Kanai
发明人： Yutaka Ohmoto , Hironobu Kawahara , Ken Yoshioka , Kazue Takahashi , Saburou Kanai
IPC分类号： H01L21/3065 , H01J37/32 , H01L21/302
CPC分类号： H01J37/32706
摘要： A plasma etching method of a wafer includes the steps of electrostatically attracting the wafer which has a gate oxide film onto a wafer mounting electrode in a vacuum processing chamber, introducing a mixed gas into the vacuum processing chamber on the basis of an etching recipe, generating a magnetic field inside the vacuum processing chamber, generating a plasma in the vacuum processing chamber, applying a bias power to the wafer to accelerate ions in the plasma toward the wafer, and setting an impedance of a portion of the wafer mounting electrode which corresponds to an outer periphery of the wafer as viewed from a bias power supply to a value which is greater than that of a center portion of the wafer mounting electrode using an electrode arranged within the wafer mounting electrode at a position corresponding to the outer periphery of the wafer and formed under an insulating film for electrostatically attracting the wafer.
摘要翻译：晶片的等离子体蚀刻方法包括以下步骤：将具有栅极氧化膜的晶片静电吸引到真空处理室中的晶片安装电极上，基于蚀刻配方将混合气体引入真空处理室，产生真空处理室内部的磁场，在真空处理室内产生等离子体，向晶片施加偏置功率，将等离子体中的离子加速朝向晶片，将晶片安装电极的一部分的阻抗设定为对应于从晶片安装电极的晶片安装电极的对应于晶片外周的位置的晶片安装电极的晶片安装电极的中心部分的角度看，晶片的外周是从偏压电源观察到的值并形成在用于静电吸引晶片的绝缘膜下。

17. 发明授权

US07608162B2 Plasma processing apparatus and method 失效
标题翻译：等离子体处理装置及方法
公开(公告)号：US07608162B2
公开(公告)日：2009-10-27
申请号：US11865836
申请日：2007-10-02
申请人： Yutaka Ohmoto , Hironobu Kawahara , Ken Yoshioka , Kazue Takahashi , Saburou Kanai
发明人： Yutaka Ohmoto , Hironobu Kawahara , Ken Yoshioka , Kazue Takahashi , Saburou Kanai
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H01L21/683
CPC分类号： H01J37/32192 , H01J37/321 , H01J37/32559 , H01J37/32623 , H01J37/32706
摘要： A plasma processing apparatus includes a high-frequency power source for applying bias power to an electrode on which a substrate is disposed, an insulating layer formed on a surface of the electrode, a conductive material buried within the insulating layer, a feeder line connecting the high-frequency power source and the conductive material, a variable capacitor provided in the feeder line, and a direct current power source connected to the electrode at a position between the electrode and the high-frequency power source. One portion of the insulating layer where the conductive material is buried formed on an outer part of the electrode has a thickness which is greater than a thickness of another portion of the insulating layer where the conducting material is not buried and which extends from a central part of the electrode to the one portion of the insulating layer.
摘要翻译：等离子体处理装置包括用于向其上设置基板的电极施加偏置功率的高频电源，形成在电极的表面上的绝缘层，埋在绝缘层内的导电材料，连接高频电源和导电材料，设置在馈电线路中的可变电容器，以及在电极和高频电源之间的位置处连接到电极的直流电源。绝缘层的绝缘层的一部分形成在电极的外部部分上，其厚度大于绝缘层的另一部分的厚度，其中导电材料不被埋入，并且其厚度从中心部分延伸的绝缘层的一部分。

18. 发明授权

US07288166B2 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US07288166B2
公开(公告)日：2007-10-30
申请号：US10663646
申请日：2003-09-17
申请人： Yutaka Ohmoto , Hironobu Kawahara , Ken Yoshioka , Kazue Takahashi , Saburou Kanai
发明人： Yutaka Ohmoto , Hironobu Kawahara , Ken Yoshioka , Kazue Takahashi , Saburou Kanai
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32192 , H01J37/321 , H01J37/32559 , H01J37/32623 , H01J37/32706
摘要： A plasma processing apparatus for manufacturing a semiconductor device includes an apparatus for applying bias powers to a substrate to be processed and a material adjacent to the substrate, an apparatus for adjusting a feeding impedance for the bias power applied to the material, and an apparatus for adjusting feeding impedances for the bias powers to a plurality of positions on the substrate so as to make electrons projected to the substrate from the plasma uniform within a surface of the substrate.
摘要翻译：一种用于制造半导体器件的等离子体处理设备包括：用于向待处理衬底施加偏压功率的设备和与衬底相邻的材料;用于调节施加到该材料上的偏置功率的馈电阻抗的设备;以及用于将所述偏置功率的馈送阻抗调整到所述衬底上的多个位置，以使得在所述衬底的表面内使等离子体投射到所述衬底的电子均匀。

19. 发明授权

US06413876B1 Method for plasma processing high-speed semiconductor circuits with increased yield 失效
标题翻译：用于等离子体处理具有增加的产量的高速半导体电路的方法
公开(公告)号：US06413876B1
公开(公告)日：2002-07-02
申请号：US09797571
申请日：2001-03-05
申请人： Yutaka Ohmoto , Hironobu Kawahara , Ken Yoshioka , Kazue Takahashi , Saburou Kanai
发明人： Yutaka Ohmoto , Hironobu Kawahara , Ken Yoshioka , Kazue Takahashi , Saburou Kanai
IPC分类号： H01L21302
CPC分类号： H01J37/32706
摘要： A plasma processing apparatus processes high-speed semiconductor circuits by using plasma with an increased yield. The plasma processing apparatus has a vacuum vessel including an exhaust device, a starting material gas supplying device, an electrode for installing a workpiece (wafer) and a device for applying radio frequency power to the wafer. This apparatus converts the starting material gas to plasma inside the vacuum vessel and plasma-processes a wafer surface, wherein an insulating film is interposed between the electrode for installing the wafer and the wafer and has a conductive material at a part thereof, and the conductive material is electrically grounded through an impedance regulating circuit.
摘要翻译：等离子体处理装置通过使用具有增加的产量的等离子体来处理高速半导体电路。等离子体处理装置具有包括排气装置，原料气体供给装置，用于安装工件的电极（晶片）和用于向晶片施加射频功率的装置的真空容器。该装置将原料气体转化为真空容器内的等离子体，对晶片表面进行等离子体处理，其中绝缘膜插入在用于安装晶片的电极和晶片之间，并且其一部分具有导电材料，并且导电材料通过阻抗调节电路电接地。

20. 发明授权

US09384946B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US09384946B2
公开(公告)日：2016-07-05
申请号：US13410331
申请日：2012-03-02
申请人： Kohei Sato , Kazunori Nakamoto , Yutaka Ohmoto
发明人： Kohei Sato , Kazunori Nakamoto , Yutaka Ohmoto
IPC分类号： H01L21/683 , H01J37/32 , H01L21/67 , H01L21/687
CPC分类号： H01J37/32082 , H01L21/67126 , H01L21/6833 , H01L21/68785
摘要： In a plasma processing apparatus having a processing chamber, a sample stage, a sample, a dielectric-composed insulating film and an electrode, the sample stage can be divided into an upper member and a lower member, the upper member including the insulating film and an electrode, the apparatus includes a socket which is deployed inside a through hole of the upper member, and which is electrically connected to the electrode, a pin which is brought into contact with the socket by being inserted into the socket, and a seal member which is attached onto the socket in order to implement a hermetic sealing between the upper-member side and the lower-member side inside the through hole, the upper-member side being continuously linked to the decompressed processing chamber, the lower-member side being continuously linked to the substantially-atmospheric-pressure side which is the outside of the processing chamber.
摘要翻译：在具有处理室，样品台，样品，电介质绝缘膜和电极的等离子体处理装置中，样品台可以分为上部构件和下部构件，上部构件包括绝缘膜和一种电极，该装置包括：插座，该插座设置在上部构件的通孔的内部，并与电极电连接;插销插入插座而与插座接触的插头;以及密封构件其安装在插座上，以便在通孔内部实现上部件侧和下部件侧之间的气密密封，上部件侧连续地连接到减压处理室，下部件侧为连续地连接到作为处理室外部的大气压力侧。

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