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11. 发明授权

US07622734B2 Organic transistor using self-assembled monolayer 有权
标题翻译：有机晶体管采用自组装单层
公开(公告)号：US07622734B2
公开(公告)日：2009-11-24
申请号：US11865769
申请日：2007-10-02
申请人： Yuji Suwa , Tomihiro Hashizume , Masahiko Ando , Takeo Shiba
发明人： Yuji Suwa , Tomihiro Hashizume , Masahiko Ando , Takeo Shiba
IPC分类号： H01L51/00
CPC分类号： H01L51/105 , H01L51/0545
摘要： Disclosed are a method for inexpensively reducing the contact resistance between an electrode and an organic semiconductor upon a p-type operation of the organic semiconductor; and a method for inexpensively operating, as an n-type semiconductor, an organic semiconductor that is likely to work as a p-type semiconductor. In addition, also disclosed are a p-cannel FET, an n-channel FET, and a C-TFT which can be fabricated inexpensively. Specifically, a p-type region and an n-type region is inexpensively prepared on one substrate by arranging an organic semiconductor that is likely to work as a p-type semiconductor in a p-channel FET region and an n-channel FET region of a C-TFT; and arranging a self-assembled monolayer between an electrode and the organic semiconductor in the n-channel FET region, which self-assembled monolayer is capable of allowing the organic semiconductor to work as an n-type semiconductor.
摘要翻译：公开了一种在有机半导体的p型操作时廉价地降低电极和有机半导体之间的接触电阻的方法; 以及作为n型半导体廉价地操作有可能用作p型半导体的有机半导体的方法。此外，还公开了可以廉价制造的p型FET，n沟道FET和C-TFT。具体地说，在一个衬底上廉价地制备p型区域和n型区域，通过在p沟道FET区域和n沟道FET区域中配置可能作为p型半导体的有机半导体，一个C-TFT; 并且在n沟道FET区域中的电极和有机半导体之间布置自组装单层，该自组装单层能够使有机半导体作为n型半导体工作。

12. 发明授权

US06299990B1 Ferromagnetic material and magnetic apparatus employing the ferromagnetic material 失效
标题翻译：使用铁磁材料的铁磁材料和磁性装置
公开(公告)号：US06299990B1
公开(公告)日：2001-10-09
申请号：US09375439
申请日：1999-08-17
申请人： Satoshi Watanabe , Toshiyuki Onogi , Masahiko Ichimura , Yoshimasa Ono , Tomihiro Hashizume , Yasuo Wada , Yuji Suwa
发明人： Satoshi Watanabe , Toshiyuki Onogi , Masahiko Ichimura , Yoshimasa Ono , Tomihiro Hashizume , Yasuo Wada , Yuji Suwa
IPC分类号： G11B566
CPC分类号： B82Y30/00 , B82B1/00 , B82B3/00 , B82Y15/00 , B82Y25/00 , B82Y40/00 , G11B5/00 , G11B5/3945 , G11B5/3961 , G11B5/3967 , G11B5/49 , G11B5/4984 , G11B2005/0005 , H01F1/0036 , H01F1/0302 , Y10S428/90 , Y10T428/1136 , Y10T428/1193 , Y10T428/32
摘要： A ferromagnetic material can be formed in a very small size on the order of an atomic size and is capable of being stably magnetized. The ferromagnetic material comprises basic unit structures each consisting of a first atom (11), a second atom (12) of the same kind as the first atom (11), and a third atom (or atomic group) (13) of the same kind as the first atom (11) or of a kind different from that of the first atom (11). In each of the basic unit structures, the atoms are arranged on a surface of a substrate so that a chemical bond (14) is formed between the first atom or molecule and the third atom or molecule, a chemical bond (14) is formed between the second atom or molecule and the third atom or molecule, and a chemical bond or an electron path (15) not passing the third atom is formed between the first and the second atom or molecule, wherein said third atoms or molecules consist of As atoms.
摘要翻译：铁磁材料可以以原子尺寸的数量级的非常小的尺寸形成，并且能够被稳定地磁化。铁磁材料包括各自由与第一原子（11）相同类型的第一原子（11），第二原子（12）和与第一原子（11）相同种类的第二原子（12）和相同种类的第一原子（或原子团）作为第一原子（11）或与第一原子（11）不同的一种。在每个基本单元结构中，原子布置在基板的表面上，使得在第一原子或分子与第三原子或分子之间形成化学键（14），在第一原子或分子与第三原子或分子之间形成化学键（14），在第一和第二原子或分子之间形成第二原子或分子和第三原子或分子，以及不通过第三原子的化学键或电子通路（15），其中所述第三原子或分子由As原子。

13. 发明授权

US07807496B2 Field effect transistor and its manufacturing method 有权
标题翻译：场效应晶体管及其制造方法
公开(公告)号：US07807496B2
公开(公告)日：2010-10-05
申请号：US11194597
申请日：2005-08-02
申请人： Masaaki Fujimori , Tomihiro Hashizume , Masahiko Ando
发明人： Masaaki Fujimori , Tomihiro Hashizume , Masahiko Ando
IPC分类号： H01L51/40
CPC分类号： H01L51/0012 , H01L51/0003 , H01L51/0541 , H01L51/0545
摘要： To provide a method of easily producing TFT in which the orientation of channel molecules or wires is enhanced, compared with conventional type organic TFT at a low price, a lyophilic TFT pattern encircled by a lyophobic area is formed on a substrate, spontaneous movement is made in a droplet containing organic molecules or nanowires dropped in a channel region by characterizing the form of the pattern, and the organic molecules or the nanowires are oriented in the channel region by the movement.
摘要翻译：为了提供容易制造其中通道分子或导线的取向增强的TFT的方法，与常规型有机TFT相比，以低价格，在基板上形成由疏液区域包围的亲液性TFT图案，自发移动在通过表征图案的形式而含有有机分子或纳米线落入沟道区的液滴中，并且有机分子或纳米线通过运动在通道区域中取向。

14. 发明授权

US07772622B2 Field effect transistor and manufacturing method thereof 有权
标题翻译：场效应晶体管及其制造方法
公开(公告)号：US07772622B2
公开(公告)日：2010-08-10
申请号：US11733794
申请日：2007-04-11
申请人： Masaaki Fujimori , Tomihiro Hashizume , Masahiko Ando
发明人： Masaaki Fujimori , Tomihiro Hashizume , Masahiko Ando
IPC分类号： H01L29/80 , H01L21/84
CPC分类号： H01L51/0012 , H01L51/0003 , H01L51/0545 , H01L51/0558 , H01L51/102
摘要： A manufacturing method of a field effect transistor in which, a patterned gate electrode is provided on a substrate, and a gate insulator is provided on the substrate and the gate electrode, a source electrode and a drain electrode are spaced apart from each other on the gate insulator, a region to be a channel between the source electrode and the drain electrode is provided, a boundary between the region and either one of the source electrode and the drain electrode is linear, a boundary between the region and either one of the drain electrode and the source electrode is non-linear, the boundary has a continuous or discontinuous shape, and the boundary part has a plurality of recess parts, the surface of the region has hydrophilicity and a peripheral region of the region prepares a member having water-repellency, and a solution including semiconductor organic molecules is supplied to the region, and the solution is dried.
摘要翻译：一种场效应晶体管的制造方法，其中，在基板上设置图案化栅电极，并且在基板上设置栅极绝缘体，并且栅电极，源电极和漏极彼此间隔开栅极绝缘体，设置作为源电极和漏电极之间的沟道的区域，该区域与源电极和漏电极中的任一个之间的边界是线性的，该区域与漏极之一之间的边界电极和源电极是非线性的，边界具有连续或不连续的形状，并且边界部分具有多个凹部，该区域的表面具有亲水性，并且该区域的周边区域准备具有水 - 将排斥性和包含半导体有机分子的溶液供给到该区域，并将溶液干燥。

15. 发明申请

US20070117298A1 Field effect transistor and method of manufacturing the same 有权
标题翻译：场效应晶体管及其制造方法
公开(公告)号：US20070117298A1
公开(公告)日：2007-05-24
申请号：US11602404
申请日：2006-11-21
申请人： Masaaki Fujimori , Tomihiro Hashizume , Masahiko Ando
发明人： Masaaki Fujimori , Tomihiro Hashizume , Masahiko Ando
IPC分类号： H01L21/8234
CPC分类号： H01L51/0003 , H01L51/0012 , H01L51/052 , H01L51/0545
摘要： A TFT having a large mobility of carriers that are conducted through a channel as compared with a conventional organic TFT, and a method of manufacturing the TFT inexpensively and easily are provided. The channel is formed of a semiconductor organic molecular crystal thin film which is highly oriented, and a TFT that is large in the mobility of the carriers that are conducted through the channel, and a lyophilic TFT pattern that is surrounded by a lyophobic region on a substrate are formed, and the configuration of the pattern is featured, whereby a solution of the semiconductor organic molecules which is supplied to an appropriate region of a substrate surface including the channel is spontaneously dried in an anisotropic fashion, and highly oriented crystal is grown in the drying process.
摘要翻译：提供了与常规有机TFT相比通过沟道传导的载流子迁移率大的TFT，以及廉价且容易地制造TFT的方法。该通道由高度取向的半导体有机分子晶体薄膜和通过沟道传导的载流子的迁移率大的TFT以及由疏液区域包围的亲液性TFT图案形成形成衬底，并且特征在于图案的构造，由此将供给到包括沟道的衬底表面的适当区域的半导体有机分子的溶液以各向异性方式自发干燥，并且高度取向的晶体生长在干燥过程。

16. 发明授权

US07608857B2 Field effect transistor having a structure in which an organic semiconductor that forms a channel is made of a single crystal or a polycrystal of organic molecules 有权
标题翻译：具有其中形成沟道的有机半导体由有机分子的单晶或多晶体构成的场效应晶体管
公开(公告)号：US07608857B2
公开(公告)日：2009-10-27
申请号：US11602404
申请日：2006-11-21
申请人： Masaaki Fujimori , Tomihiro Hashizume , Masahiko Ando
发明人： Masaaki Fujimori , Tomihiro Hashizume , Masahiko Ando
IPC分类号： H01L31/036
CPC分类号： H01L51/0003 , H01L51/0012 , H01L51/052 , H01L51/0545
摘要： A TFT having a large mobility of carriers that are conducted through a channel as compared with a conventional organic TFT, and a method of manufacturing the TFT inexpensively and easily are provided. The channel is formed of a semiconductor organic molecular crystal thin film which is highly oriented, and a TFT that is large in the mobility of the carriers that are conducted through the channel, and a lyophilic TFT pattern that is surrounded by a lyophobic region on a substrate are formed, and the configuration of the pattern is featured, whereby a solution of the semiconductor organic molecules which is supplied to an appropriate region of a substrate surface including the channel is spontaneously dried in an anisotropic fashion, and highly oriented crystal is grown in the drying process.
摘要翻译：提供了与常规有机TFT相比通过沟道传导的载流子迁移率大的TFT，以及廉价且容易地制造TFT的方法。该通道由高度取向的半导体有机分子晶体薄膜和通过沟道传导的载流子的迁移率大的TFT以及由疏液区域包围的亲液性TFT图案形成形成衬底，并且特征在于图案的构造，由此将供给到包括沟道的衬底表面的适当区域的半导体有机分子的溶液以各向异性方式自发干燥，并且高度取向的晶体生长在干燥过程。

17. 发明申请

US20060110847A1 Field effect transistor and its manufacturing method 有权
标题翻译：场效应晶体管及其制造方法
公开(公告)号：US20060110847A1
公开(公告)日：2006-05-25
申请号：US11194597
申请日：2005-08-02
申请人： Masaaki Fujimori , Tomihiro Hashizume , Masahiko Ando
发明人： Masaaki Fujimori , Tomihiro Hashizume , Masahiko Ando
IPC分类号： H01L51/40 , H01L21/84 , H01L21/00
CPC分类号： H01L51/0012 , H01L51/0003 , H01L51/0541 , H01L51/0545
摘要： To provide a method of easily producing TFT in which the orientation of channel molecules or wires is enhanced, compared with conventional type organic TFT at a low price, a lyophilic TFT pattern encircled by a lyophobic area is formed on a substrate, spontaneous movement is made in a droplet containing organic molecules or nanowires dropped in a channel region by characterizing the form of the pattern, and the organic molecules or the nanowires are oriented in the channel region by the movement.
摘要翻译：为了提供容易制造其中通道分子或导线的取向增强的TFT的方法，与常规型有机TFT相比，以低价格，在基板上形成由疏液区域包围的亲液性TFT图案，自发移动在通过表征图案的形式而含有有机分子或纳米线落入沟道区的液滴中，并且有机分子或纳米线通过运动在通道区域中取向。

18. 发明申请

US20080099760A1 Picture element driving circuit of display panel and display device using the same 审中-公开
标题翻译：显示面板的图像元件驱动电路及使用其的显示装置
公开(公告)号：US20080099760A1
公开(公告)日：2008-05-01
申请号：US11976298
申请日：2007-10-23
申请人： Masaaki Fujimori , Takeo Shiba , Masahiko Ando , Masahiro Kawasaki , Tomihiro Hashizume
发明人： Masaaki Fujimori , Takeo Shiba , Masahiko Ando , Masahiro Kawasaki , Tomihiro Hashizume
IPC分类号： H01L51/05
CPC分类号： H01L27/3274 , H01L27/1292 , H01L27/283 , H01L51/0004
摘要： The present invention provides a picture element driving circuit of an active matrix display device, with a configuration of no through-holes, including two or more FETs. A display device of the present invention has a structure in which a first field-effect transistor and a second field-effect transistor are provided, insulation films of the first and second field-effect transistor are formed on the same layer, and semiconductors used as channels of the two field-effect transistors are formed on both surfaces of the insulation film, respectively. The display device has an electric circuit of a structure in which one of source/drain electrodes of the first field-effect transistor is used as a gate electrode of the second field-effect transistor.
摘要翻译：本发明提供一种有源矩阵显示装置的像素驱动电路，具有不包括两个或更多个FET的通孔的结构。本发明的显示装置具有其中设置有第一场效应晶体管和第二场效应晶体管的结构，第一和第二场效应晶体管的绝缘膜形成在同一层上，半导体用作两个场效应晶体管的沟道分别形成在绝缘膜的两个表面上。显示装置具有其中使用第一场效应晶体管的源极/漏极之一作为第二场效应晶体管的栅电极的结构的电路。

19. 发明申请

US20070252229A1 Field Effect Transistor and Manufacturing Method Thereof 有权
标题翻译：场效应晶体管及其制造方法
公开(公告)号：US20070252229A1
公开(公告)日：2007-11-01
申请号：US11733794
申请日：2007-04-11
申请人： MASAAKI FUJIMORI , Tomihiro Hashizume , Masahiko Ando
发明人： MASAAKI FUJIMORI , Tomihiro Hashizume , Masahiko Ando
IPC分类号： H01L23/58
CPC分类号： H01L51/0012 , H01L51/0003 , H01L51/0545 , H01L51/0558 , H01L51/102
摘要： A manufacturing method of a field effect transistor in which, a patterned gate electrode is provided on a substrate, and a gate insulator is provided on the substrate and the gate electrode, a source electrode and a drain electrode are spaced apart from each other on the gate insulator, a region to be a channel between the source electrode and the drain electrode is provided, a boundary between the region and either one of the source electrode and the drain electrode is linear, a boundary between the region and either one of the drain electrode and the source electrode is non-linear, the boundary has a continuous or discontinuous shape, and the boundary part has a plurality of recess parts, the surface of the region has hydrophilicity and a peripheral region of the region prepares a member having water-repellency, and a solution including semiconductor organic molecules is supplied to the region, and the solution is dried.
摘要翻译：一种场效应晶体管的制造方法，其中，在基板上设置图案化栅电极，并且在基板上设置栅极绝缘体，并且栅电极，源电极和漏极彼此间隔开栅极绝缘体，设置作为源电极和漏电极之间的沟道的区域，该区域与源电极和漏电极中的任一个之间的边界是线性的，该区域与漏极之一之间的边界电极和源电极是非线性的，边界具有连续或不连续的形状，并且边界部分具有多个凹部，该区域的表面具有亲水性，并且该区域的周边区域准备具有水 - 将排斥性和包含半导体有机分子的溶液供给到该区域，并将溶液干燥。

20. 发明授权

US5801472A Micro-fabricated device with integrated electrostatic actuator 失效
标题翻译：具有集成静电执行器的微型器件
公开(公告)号：US5801472A
公开(公告)日：1998-09-01
申请号：US696089
申请日：1996-08-13
申请人： Yasuo Wada , Munehisa Mitsuya , Tsuneo Ichiguchi , Tomihiro Hashizume , Seiji Heike , Mark Lutwyche , Satoshi Watanabe
发明人： Yasuo Wada , Munehisa Mitsuya , Tsuneo Ichiguchi , Tomihiro Hashizume , Seiji Heike , Mark Lutwyche , Satoshi Watanabe
IPC分类号： G01Q70/02 , G01Q70/08 , G11B9/00 , H02N1/00 , G01N23/00
CPC分类号： H02N1/008 , G01Q10/045 , G01Q60/16 , G11B9/14 , G11B9/1418 , G01Q70/06 , G11B9/1409 , Y10S977/872
摘要： A device according to the present invention is a miniaturized efficient device wherein electromechanical transduction is enabled and which is provided with at least an integrated electrostatic actuator provide with an actuator in which a fixed portion and a movable portion are opposite, a plurality of which are arranged and the relative amount of movement of which is controlled by controlling electrostatic force operating between both, the movable portion moved by the integrated electrostatic actuator and a portion connected to the movable portion which can be operated mechanically. The probe of a scanning probe microscope is provided to the movable portion of the above actuator. The above transducer is provided with the structure in which a large number of such actuators are arranged two- or one-dimensionally.
摘要翻译：根据本发明的装置是一种小型化的有效装置，其中机电转换是可以实现的，并且至少设置有一个集成的静电致动器，该静电致动器具有固定部分和可动部分相对的致动器，其中多个布置并且通过控制两者之间的静电力操作，由一体式静电致动器移动的可动部分和连接到可机械操作的可动部分的部分来控制其相对移动量。扫描探针显微镜的探针设置在上述致动器的可动部。上述传感器具有其中大量这样的致动器被二维或一维布置的结构。

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