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11. 发明授权

US07719047B2 Non-volatile memory device and fabrication method thereof and memory apparatus including thereof 有权
标题翻译：非易失性存储器件及其制造方法及其包括的存储装置
公开(公告)号：US07719047B2
公开(公告)日：2010-05-18
申请号：US11777637
申请日：2007-07-13
申请人： Byoung Deog Choi , Jun Sin Yi , Sung Wook Jung , Sung Hyung Hwang
发明人： Byoung Deog Choi , Jun Sin Yi , Sung Wook Jung , Sung Hyung Hwang
IPC分类号： H01L29/06
CPC分类号： H01L29/7881 , B82Y10/00 , H01L21/28273 , H01L27/12 , H01L29/04 , H01L29/1037 , H01L29/42332 , H01L29/513
摘要： A non-volatile memory device is capable of reducing an excessive leakage current due to a rough surface of a polysilicon and of realizing improved blocking function by forming the first oxide film including a silicon oxy-nitride (SiOxNy) layer using nitrous oxide (N2O) plasma, and by forming silicon-rich silicon nitride film, and a fabricating method thereof and a memory apparatus including the non-volatile memory device. Further, the non-volatile memory device can be fabricated on the glass substrate without using a high temperature process.
摘要翻译：非易失性存储器件能够通过使用一氧化二氮（N 2 O）形成包括氮氧化硅（SiO x N y）层的第一氧化物膜，从而减少由于多晶硅的粗糙表面引起的过大的漏电流，并且实现改进的阻挡功能，等离子体，并且通过形成富硅的氮化硅膜及其制造方法和包括非易失性存储器件的存储装置。此外，可以在不使用高温处理的情况下在玻璃基板上制造非易失性存储器件。

12. 发明授权

US08424942B2 Industrial gripper with multiple degrees of freedom 有权
标题翻译：工业夹具具有多个自由度
公开(公告)号：US08424942B2
公开(公告)日：2013-04-23
申请号：US12926869
申请日：2010-12-14
申请人： Hahn Park , Sung Wook Jung , Jae Chul Hwang , Yong Won Choi
发明人： Hahn Park , Sung Wook Jung , Jae Chul Hwang , Yong Won Choi
IPC分类号： B66C1/00 , B66C1/42
CPC分类号： B25J15/10 , B25J15/0266
摘要： An industrial gripper includes a base plate, at least three finger units to be moved relative to the base plate, a supporting unit to support the finger units, a first drive unit coupled to the supporting unit to allow simultaneous angular displacement of the finger units toward an object, and a second drive unit coupled to the supporting unit to adjust orientation angles between the finger units. Each of the finger units includes an intermediation member to be moved in a first direction by the first drive unit, a grip member to grip the object by being moved in a second direction different from the first direction as a movement direction of the intermediation member, and a connection member to convert the first direction movement of the intermediation member into the second direction movement of the grip member.
摘要翻译：工业夹持器包括基板，至少三个相对于基板移动的指状单元，支撑单元以支撑指状单元;耦合到支撑单元的第一驱动单元，以允许手指单元朝向物体和耦合到支撑单元的第二驱动单元，以调节指状单元之间的取向角度。每个指状单元包括通过第一驱动单元沿第一方向移动的中间构件，夹持构件，用于通过沿与中间构件的移动方向不同的第一方向的第二方向移动来夹持物体，以及连接构件，用于将中介构件的第一方向运动转换成握持构件的第二方向运动。

13. 发明申请

US20110010756A1 VIRTUAL APPLICATION PROGRAM SYSTEM, STORING DEVICE, METHOD FOR EXECUTING VIRTUAL APPLICATION PROGRAM AND METHOD FOR PROTECTING VIRTUAL ENVIRONMENT 审中-公开
标题翻译：虚拟应用程序系统，存储设备，执行虚拟应用程序的方法和保护虚拟环境的方法
公开(公告)号：US20110010756A1
公开(公告)日：2011-01-13
申请号：US12811596
申请日：2008-12-31
申请人： Jong Uk Choi , Dongha Shin , Sung Wook Jung , Ji Yeon Kim , Muhammad Ali Malik , Samg Yup Shim , Hong Won Lee
发明人： Jong Uk Choi , Dongha Shin , Sung Wook Jung , Ji Yeon Kim , Muhammad Ali Malik , Samg Yup Shim , Hong Won Lee
IPC分类号： G06F21/00 , G06F9/00 , G06F9/445
CPC分类号： G06F21/31 , G06F21/53
摘要： The present invention relates to a virtual application program system, a storage device, a method of executing a virtual application program, and a method of protecting a virtual environment. The virtual application program system includes an execution control module for executing a virtual application program, and a virtual environment protection module loaded by the execution control module and configured to block non-permitted application programs from accessing a virtual environment accessed by the virtual application program. Accordingly, the virtual environment can be protected from a host application program, etc., and independency and security of a task using a virtual application program can be guaranteed.
摘要翻译：本发明涉及虚拟应用程序系统，存储装置，执行虚拟应用程序的方法以及保护虚拟环境的方法。虚拟应用程序系统包括用于执行虚拟应用程序的执行控制模块和由执行控制模块加载并被配置为阻止不允许的应用程序访问由虚拟应用程序访问的虚拟环境的虚拟环境保护模块。因此，可以保护虚拟环境免受主机应用程序等的影响，并且可以保证使用虚拟应用程序的任务的独立性和安全性。

14. 发明申请

US20080121888A1 NONVOLATILE MEMORY CELL, ARRAY THEREOF, FABRICATION METHODS THEREOF AND DEVICE COMPRISING THE SAME 有权
标题翻译：非易失性存储器单元，其阵列，其制造方法和包含其的器件
公开(公告)号：US20080121888A1
公开(公告)日：2008-05-29
申请号：US11777657
申请日：2007-07-13
申请人： Byoung Deog CHOI , Jun Sin Yi , Sung Wook Jung , Sung Hyung Hwang
发明人： Byoung Deog CHOI , Jun Sin Yi , Sung Wook Jung , Sung Hyung Hwang
IPC分类号： H01L29/06 , H01L21/336
CPC分类号： H01L21/28273 , B82Y10/00 , H01L21/84 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L27/12 , H01L29/04 , H01L29/1037 , H01L29/42332 , H01L29/513 , H01L29/66825 , H01L29/7881 , Y10S977/72 , Y10S977/721 , Y10S977/723 , Y10S977/773 , Y10S977/774 , Y10S977/784 , Y10S977/785
摘要： A nonvolatile memory cell is capable of reducing an excessive current leakage due to a rough surface of a polysilicon and of performing even at a low temperature process by forming the first oxide film including a silicon oxynitride (SiOxNy) layer using nitrous oxide plasma and by forming a plurality of silicon nanocrystals in a nitride film by implanting a silicon nanocrystal on the nitride film by an ion implantation method, and a fabricating method thereof and a memory apparatus including the nonvolatile memory cell.
摘要翻译：非易失性存储单元能够通过使用一氧化二氮等离子体形成包含氧氮化硅（SiO x N y）层的第一氧化物膜，并且通过形成多晶硅的粗糙表面而能够减少由于多晶硅的粗糙表面而导致的过大的电流泄漏，甚至在低温工艺通过离子注入法在氮化物膜上注入硅纳米晶体的氮化物膜中的多个硅纳米晶体及其制造方法和包括非易失性存储单元的存储装置。

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