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11. 发明申请

US20110233781A1 METAL LINE OF SEMICONDUCTOR DEVICE HAVING A DIFFUSION BARRIER WITH AN AMORPHOUS TaBN LAYER AND METHOD FOR FORMING THE SAME 有权
标题翻译：具有无定形TaBN层的扩散阻挡层的半导体器件的金属线及其形成方法
公开(公告)号：US20110233781A1
公开(公告)日：2011-09-29
申请号：US13152665
申请日：2011-06-03
申请人： Dong Ha JUNG , Seung Jin YEOM , Baek Mann KIM , Young Jin LEE , Jeong Tae KIM
发明人： Dong Ha JUNG , Seung Jin YEOM , Baek Mann KIM , Young Jin LEE , Jeong Tae KIM
IPC分类号： H01L23/48
CPC分类号： H01L23/53238 , H01L21/76843 , H01L21/76846 , H01L21/76856 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A metal line in a semiconductor device includes an insulation layer formed on a semiconductor substrate. A metal line forming region is formed in the insulation layer. A metal line is formed to fill the metal line forming region of the insulation layer. And a diffusion barrier that includes an amorphous TaBN layer is formed between the metal line and the insulation layer. The amorphous TaBN layer prevents a copper component from diffusing into the semiconductor substrate, thereby improving upon the characteristics and the reliability of a device.
摘要翻译：半导体器件中的金属线包括形成在半导体衬底上的绝缘层。在绝缘层中形成金属线形成区域。形成金属线以填充绝缘层的金属线形成区域。并且在金属线和绝缘层之间形成包括非晶态TaBN层的扩散阻挡层。无定形TaBN层防止铜成分扩散到半导体衬底中，从而改善器件的特性和可靠性。

12. 发明申请

US20100059890A1 METAL LINE OF SEMICONDUCTOR DEVICE HAVING A DIFFUSION BARRIER INCLUDING CRxBy AND METHOD FOR FORMING THE SAME 失效
标题翻译：具有包含CRxBy的扩张障碍物的半导体器件的金属线及其形成方法
公开(公告)号：US20100059890A1
公开(公告)日：2010-03-11
申请号：US12619147
申请日：2009-11-16
申请人： Dong Ha JUNG , Seung Jin YEOM , Baek Mann KIM , Young Jin LEE , Jeong Tae KIM
发明人： Dong Ha JUNG , Seung Jin YEOM , Baek Mann KIM , Young Jin LEE , Jeong Tae KIM
IPC分类号： H01L23/48
CPC分类号： H01L21/76843 , H01L21/28556 , H01L21/76873 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A metal line of a semiconductor device having a diffusion barrier including CrxBy and a method for forming the same is described. The metal line of a semiconductor device includes an insulation layer formed on a semiconductor substrate. The insulation layer is formed having a metal line forming region. A diffusion barrier including a CrxBy layer is subsequently formed on the surface of the metal line forming region and the insulation layer. A metal line is finally formed to fill the metal line forming region of the insulation layer on the diffusion barrier including a CrxBy layer.
摘要翻译：描述了具有包括CrxBy的扩散阻挡层的半导体器件的金属线及其形成方法。半导体器件的金属线包括形成在半导体衬底上的绝缘层。绝缘层形成有金属线形成区域。随后在金属线形成区域和绝缘层的表面上形成包括Cr x B y层的扩散阻挡层。最后形成金属线以填充包含CrxBy层的扩散阻挡层上的绝缘层的金属线形成区域。

13. 发明申请

US20090001580A1 METAL LINE OF SEMICONDUCTOR DEVICE HAVING A DIFFUSION BARRIER INCLUDING CRxBy AND METHOD FOR FORMING THE SAME 失效
标题翻译：具有包含CRxBy的扩张障碍物的半导体器件的金属线及其形成方法
公开(公告)号：US20090001580A1
公开(公告)日：2009-01-01
申请号：US11940370
申请日：2007-11-15
申请人： Dong Ha JUNG , Seung Jin YEOM , Baek Mann KIM , Young Jin LEE , Jeong Tae KIM
发明人： Dong Ha JUNG , Seung Jin YEOM , Baek Mann KIM , Young Jin LEE , Jeong Tae KIM
IPC分类号： H01L23/52 , H01L21/4763
CPC分类号： H01L21/76843 , H01L21/28556 , H01L21/76873 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A metal line of a semiconductor device having a diffusion barrier including CrxBy and a method for forming the same is described. The metal line of a semiconductor device includes an insulation layer formed on a semiconductor substrate. The insulation layer is formed having a metal line forming region. A diffusion barrier including a CrxBy layer is subsequently formed on the surface of the metal line forming region and the insulation layer. A metal line is finally formed to fill the metal line forming region of the insulation layer on the diffusion barrier including a CrxBy layer.
摘要翻译：描述了具有包括CrxBy的扩散阻挡层的半导体器件的金属线及其形成方法。半导体器件的金属线包括形成在半导体衬底上的绝缘层。绝缘层形成有金属线形成区域。随后在金属线形成区域和绝缘层的表面上形成包括Cr x B y层的扩散阻挡层。最后形成金属线以填充包含CrxBy层的扩散阻挡层上的绝缘层的金属线形成区域。

14. 发明申请

US20090001577A1 METAL LINE OF SEMICONDUCTOR DEVICE WITH A TRIPLE LAYER DIFFUSION BARRIER AND METHOD FOR FORMING THE SAME 审中-公开
标题翻译：具有三层扩散障碍物的半导体器件的金属线及其形成方法
公开(公告)号：US20090001577A1
公开(公告)日：2009-01-01
申请号：US11939054
申请日：2007-11-13
申请人： Jeong Tae KIM , Seung Jin YEOM , Baek Mann KIM , Young Jin LEE , Dong Ha JUNG
发明人： Jeong Tae KIM , Seung Jin YEOM , Baek Mann KIM , Young Jin LEE , Dong Ha JUNG
IPC分类号： H01L23/532 , H01L21/4763
CPC分类号： H01L23/53238 , H01L21/76843 , H01L21/76846 , H01L21/76856 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A metal line in a semiconductor device includes an insulation layer formed on a semiconductor substrate. A metal line forming region is formed in the insulation layer. A diffusion barrier is formed on a surface of the metal line forming region and a metal line is formed to fill the metal line forming region of the insulation layer. The diffusion barrier is formed between the metal line and the insulation layer. The diffusion barrier has a structure in which a TaSixNy layer is interposed between a first Ta-based layer and a second Ta-based layer. A metal line formed in this manner prevents the contact resistance of the metal line from increasing and the leakage current characteristics from degrading, thereby improving the device characteristics and reliability.
摘要翻译：半导体器件中的金属线包括形成在半导体衬底上的绝缘层。在绝缘层中形成金属线形成区域。在金属线形成区域的表面上形成扩散阻挡层，并且形成金属线以填充绝缘层的金属线形成区域。在金属线和绝缘层之间形成扩散阻挡层。扩散阻挡层具有其中TaSixNy层介于第一Ta基层和第二Ta基层之间的结构。以这种方式形成的金属线防止金属线的接触电阻增加，并且漏电流特性降低，从而提高器件特性和可靠性。

15. 发明申请

US20090200672A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20090200672A1
公开(公告)日：2009-08-13
申请号：US12427894
申请日：2009-04-22
申请人： Soo Hyun KIM , Kwan Yong LIM , Baek Mann KIM , Young Jin LEE , Noh Jung KWAK , Hyun Chul SOHN
发明人： Soo Hyun KIM , Kwan Yong LIM , Baek Mann KIM , Young Jin LEE , Noh Jung KWAK , Hyun Chul SOHN
IPC分类号： H01L23/52 , H01L21/336 , H01L21/4763
CPC分类号： H01L21/76841 , H01L21/28562 , H01L27/10873 , H01L27/10885 , H01L2924/0002 , H01L2924/00
摘要： Disclosed is a method for manufacturing a semiconductor device. This method includes the step of forming a diffusion barrier film, which is interposed between a silicon film and a metal film and functions to prevent diffusion between the silicon and metal films. The diffusion barrier film is formed of a WSixNy film or a WSix film by using an ALD process.
摘要翻译：公开了半导体器件的制造方法。该方法包括形成介于硅膜和金属膜之间的扩散阻挡膜的步骤，其功能是防止硅和金属膜之间的扩散。通过使用ALD工艺，由WSixNy膜或WSix膜形成扩散阻挡膜。

16. 发明申请

US20080081452A1 METHOD OF FORMING TUNGSTEN POLYMETAL GATE HAVING LOW RESISTANCE 失效
标题翻译：形成具有低电阻性的钨金属聚合物的方法
公开(公告)号：US20080081452A1
公开(公告)日：2008-04-03
申请号：US11693137
申请日：2007-03-29
申请人： Soo Hyun KIM , Noh Jung KWAK , Baek Mann KIM , Young Jin LEE , Sun Woo HWANG , Kwan Yong LIM
发明人： Soo Hyun KIM , Noh Jung KWAK , Baek Mann KIM , Young Jin LEE , Sun Woo HWANG , Kwan Yong LIM
IPC分类号： H01L21/3205
CPC分类号： H01L21/28061 , H01L29/4941
摘要： A tungsten polymetal gate is made by forming a gate insulation layer and a polysilicon layer on a semiconductor substrate; depositing a barrier layer on the polysilicon layer; depositing a tungsten nucleation layer on the barrier layer through an ALD process; depositing a tungsten layer on the tungsten nucleation layer through a CVD process; depositing a hard mask layer on the tungsten layer; and etching the hard mask layer, the tungsten layer, the tungsten nucleation layer, the barrier layer, the polysilicon layer, and the gate insulation layer.
摘要翻译：通过在半导体衬底上形成栅极绝缘层和多晶硅层来制造钨多金属栅极; 在所述多晶硅层上沉积阻挡层; 通过ALD工艺在阻挡层上沉积钨成核层; 通过CVD工艺在钨成核层上沉积钨层; 在钨层上沉积硬掩模层; 并且蚀刻硬掩模层，钨层，钨成核层，势垒层，多晶硅层和栅极绝缘层。

17. 发明申请

US20130113111A1 SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20130113111A1
公开(公告)日：2013-05-09
申请号：US13602101
申请日：2012-09-01
申请人： Young Jin LEE
发明人： Young Jin LEE
IPC分类号： H01L23/48 , H01L21/768
CPC分类号： H01L21/76883 , H01L21/76802 , H01L21/7682 , H01L21/76843 , H01L23/5222 , H01L23/5226 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device and methods directed toward preventing a leakage current between a contact plug and a line adjacent to the contact plug, and minimizing capacitance between adjacent lines.
摘要翻译：一种半导体器件和方法，旨在防止接触插塞和与接触插塞相邻的线路之间的漏电流，并使相邻线路之间的电容最小化。

18. 发明申请

US20120056227A1 LIGHT EMITTING DIODE PACKAGE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：发光二极管封装及其制造方法
公开(公告)号：US20120056227A1
公开(公告)日：2012-03-08
申请号：US13224658
申请日：2011-09-02
申请人： Young Jin LEE , Hyung Kun Kim , Kyung Mi Moon , Gwang Bok Woo
发明人： Young Jin LEE , Hyung Kun Kim , Kyung Mi Moon , Gwang Bok Woo
IPC分类号： H01L33/62 , H01L33/58
CPC分类号： H01L33/642 , H01L33/486 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2933/0075 , H01L2924/00014
摘要： A light emitting diode (LED) package is disclosed. The LED package includes a lead frame comprising a thermal pad and at least two electrode pads disposed at a distance from the thermal pad; at least one LED mounted on the thermal pad and electrically connected with the at least two electrode pads through a wire; a package mold comprising a first cavity to receive the thermal pad and the at least two electrode pads and to partially expose the thermal pad and the at least two electrode pads through a first surface of the package mold, the first surface on which the at least one LED is mounted, and exposing the thermal pad and the at least two electrode pads through a surface coplanar with a second surface opposite to the first surface; and a molding unit disposed in the first cavity.
摘要翻译：公开了一种发光二极管（LED）封装。所述LED封装包括引线框架，所述引线框架包括散热焊盘和至少两个设置在距离所述散热焊盘一定距离的电极焊盘; 至少一个LED，其安装在所述散热垫上并通过导线与所述至少两个电极焊盘电连接; 封装模具，其包括用于接收所述热垫和所述至少两个电极焊盘的第一腔，并且通过所述封装模具的第一表面部分地暴露所述热垫和所述至少两个电极焊盘，所述第一表面至少在所述第一表面上，安装一个LED，并且通过与第一表面相对的第二表面共面的表面暴露热衬垫和至少两个电极焊盘; 以及设置在所述第一腔中的模制单元。

19. 发明申请

US20120043896A1 AC DRIVEN LIGHT EMITTING DEVICE 有权
标题翻译：交流驱动发光装置
公开(公告)号：US20120043896A1
公开(公告)日：2012-02-23
申请号：US13215619
申请日：2011-08-23
申请人： Young Jin LEE , Hyung Kun Kim , Kyung Mi Moon
发明人： Young Jin LEE , Hyung Kun Kim , Kyung Mi Moon
IPC分类号： H05B37/02
CPC分类号： H05B33/0821 , H05B33/0806
摘要： There is provided an alternating current (AC) driven light emitting device including a plurality of LED arrays connected in series, each having a structure in which a plurality of LEDs are electrically connected to form a two-terminal circuit and emit light by a bidirectional voltage when an AC voltage is applied to the two-terminal circuit; and a switching device connected to at least one of the plurality of LED arrays and controlling a total driving voltage with respect to the plurality of LED arrays. The AC driven light emitting device permits operation from a low driving voltage Vf while having a high driving voltage at a high voltage Vf, thereby achieving excellence in terms of power factor, THD, and energy efficiency.
摘要翻译：提供了一种包括串联连接的多个LED阵列的交流（AC）驱动的发光器件，每个LED阵列具有多个LED电连接以形成两端电路并通过双向电压发光的结构当对两端电路施加交流电压时; 以及连接到所述多个LED阵列中的至少一个并且控制相对于所述多个LED阵列的总驱动电压的开关装置。交流驱动发光器件允许从低驱动电压Vf进行操作，同时具有高电压Vf的高驱动电压，从而在功率因数，THD和能量效率方面实现卓越。

20. 发明申请

US20090322248A1 LED DRIVING CIRCUIT AND LIGHT EMITTING DIODE ARRAY DEVICE 有权
标题翻译： LED驱动电路和发光二极管阵列器件
公开(公告)号：US20090322248A1
公开(公告)日：2009-12-31
申请号：US12262801
申请日：2008-10-31
申请人： Young Jin LEE , Joong Kon SON , Hyung Kun KIM , Jung Ja YANG , Grigory ONUSHKIN
发明人： Young Jin LEE , Joong Kon SON , Hyung Kun KIM , Jung Ja YANG , Grigory ONUSHKIN
IPC分类号： H05B41/36
CPC分类号： H05B33/0821
摘要： There is provided an LED driving circuit. The LED driving circuit according to an aspect of the invention may include: at least one ladder circuit including: (n−1) number (here, n is a positive integer satisfying n≧2) of first branches provided between first and second junction points, and connected in-line with each other by n number of first middle junction points, (n−1) number of second branches arranged in parallel with the first branches, and connected in-line with each other by n number of second middle junction points between the first and second junction points, and n number of middle branches connecting m-th first and second middle junction points to each other, wherein at least one LED device is disposed on each of the first, second, and middle branches. Here, the number of LED devices included in each of the first and second branches is greater than the number of LED devices included in each of the middle branches.
摘要翻译：提供了LED驱动电路。根据本发明的一个方面的LED驱动电路可以包括：至少一个梯形电路，包括：设置在第一和第二结之间的第一分支的（n-1）个数（这里，n是满足n> = 2的正整数）点，并且通过n个第一中间连接点彼此并排连接，（n-1）个与第一分支平行布置的第二分支，并且彼此连接成n个第二中间第一和第二接合点之间的接合点以及将第m个第一和第二中间接合点彼此连接的n个中间分支，其中至少一个LED器件设置在第一，第二和中间分支中的每一个上。这里，包括在第一和第二分支中的每个中的LED装置的数量大于包括在每个中间分支中的LED装置的数量。

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