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11. 发明申请

US20110059562A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20110059562A1
公开(公告)日：2011-03-10
申请号：US12944841
申请日：2010-11-12
申请人： Shunpei YAMAZAKI , Sachiaki TEDUKA , Satoshi TORIUMI , Makoto FURUNO , Yasuhiro JINBO , Koji DAIRIKI , Hideaki KUWABARA
发明人： Shunpei YAMAZAKI , Sachiaki TEDUKA , Satoshi TORIUMI , Makoto FURUNO , Yasuhiro JINBO , Koji DAIRIKI , Hideaki KUWABARA
IPC分类号： H01L21/336
CPC分类号： C23C16/515 , C23C16/509 , H01L27/1288 , H01L29/04 , H01L29/458 , H01L29/4908 , H01L29/78696
摘要： An object is to provide a manufacturing method of a microcrystalline semiconductor film with favorable quality over a large-area substrate. After forming a gate insulating film over a gate electrode, in order to improve quality of a microcrystalline semiconductor film formed in an initial stage, glow discharge plasma is generated by supplying high-frequency powers with different frequencies, and a lower part of the film near an interface with the gate insulating film is formed under a first film formation condition, which is low in film formation rate but results in a good quality film. Thereafter, an upper part of the film is deposited under a second film formation condition with higher film formation rate, and further, a buffer layer is stacked on the microcrystalline semiconductor film.
摘要翻译：本发明的目的是提供一种在大面积基板上具有优良质量的微晶半导体膜的制造方法。在栅电极上形成栅极绝缘膜之后，为了提高在初始阶段形成的微晶半导体膜的质量，通过提供具有不同频率的高频功率并且膜的下部附近产生辉光放电等离子体在第一成膜条件下形成具有栅极绝缘膜的界面，其成膜速率低，但是导致良好的膜质量。此后，在成膜速度较高的第二成膜条件下沉积膜的上部，并且还在微晶半导体膜上层叠缓冲层。

12. 发明申请

US20100127261A1 THIN FILM TRANSISTOR 有权
标题翻译：薄膜晶体管
公开(公告)号：US20100127261A1
公开(公告)日：2010-05-27
申请号：US12467005
申请日：2009-05-15
申请人： Shunpei YAMAZAKI , Koji DAIRIKI , Hidekazu MIYAIRI , Akiharu MIYANAGA , Takuya HIROHASHI
发明人： Shunpei YAMAZAKI , Koji DAIRIKI , Hidekazu MIYAIRI , Akiharu MIYANAGA , Takuya HIROHASHI
IPC分类号： H01L29/786
CPC分类号： H01L29/78696 , H01L27/1288 , H01L29/66765 , H01L29/78669
摘要： The thin film transistor includes, over a substrate having an insulating surface, a gate insulating layer covering a gate electrode, an amorphous semiconductor layer over the gate insulating layer, a semiconductor layer including an impurity element imparting one conductivity type over the amorphous semiconductor layer. The amorphous semiconductor layer comprises an NH radical. Defects of the amorphous semiconductor layer are reduced by cross-linking dangling bonds with the NH radical in the amorphous semiconductor layer.
摘要翻译：薄膜晶体管包括在具有绝缘表面的衬底上，覆盖栅电极的栅极绝缘层，栅极绝缘层上的非晶半导体层，包括在非晶半导体层上赋予一种导电类型的杂质元素的半导体层。非晶半导体层包含NH自由基。通过与非晶半导体层中的NH自由基交联悬挂键来减少非晶半导体层的缺陷。

13. 发明申请

US20090321737A1 THIN FILM TRANSISTOR 有权
标题翻译：薄膜晶体管
公开(公告)号：US20090321737A1
公开(公告)日：2009-12-31
申请号：US12490447
申请日：2009-06-24
申请人： Toshiyuki ISA , Yasuhiro JINBO , Sachiaki TEZUKA , Koji DAIRIKI , Hidekazu MIYAIRI , Shunpei YAMAZAKI , Takuya HIROHASHI
发明人： Toshiyuki ISA , Yasuhiro JINBO , Sachiaki TEZUKA , Koji DAIRIKI , Hidekazu MIYAIRI , Shunpei YAMAZAKI , Takuya HIROHASHI
IPC分类号： H01L29/04
CPC分类号： H01L27/1288 , H01L27/1214 , H01L29/04 , H01L29/66765 , H01L29/78696
摘要： A thin film transistor includes, as a buffer layer, a semiconductor layer which contains nitrogen and includes crystal regions in an amorphous structure between a gate insulating layer and source and drain regions, at least on the source and drain regions side. As compared to a thin film transistor in which an amorphous semiconductor is included in a channel formation region, on-current of a thin film transistor can be increased. In addition, as compared to a thin film transistor in which a microcrystalline semiconductor is included in a channel formation region, off-current of a thin film transistor can be reduced.
摘要翻译：至少在源区和漏区侧，薄膜晶体管包括作为缓冲层的半导体层，该半导体层含有氮并且包括在栅极绝缘层和源极和漏极区之间的非晶结构中的晶体区域。与在沟道形成区域中包含非晶半导体的薄膜晶体管相比，可以提高薄膜晶体管的导通电流。此外，与在沟道形成区域中包含微晶半导体的薄膜晶体管相比，可以减小薄膜晶体管的截止电流。

14. 发明申请

US20090261328A1 THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20090261328A1
公开(公告)日：2009-10-22
申请号：US12423123
申请日：2009-04-14
申请人： Hidekazu MIYAIRI , Koji DAIRIKI , Yuji EGI , Yasuhiro JINBO , Toshiyuki ISA
发明人： Hidekazu MIYAIRI , Koji DAIRIKI , Yuji EGI , Yasuhiro JINBO , Toshiyuki ISA
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L27/1288 , C23C16/0272 , C23C16/24 , C23C16/4404 , H01L27/1214 , H01L29/04 , H01L29/41733 , H01L29/66765 , H01L29/78621 , H01L29/78669 , H01L29/78678 , H01L29/78696
摘要： Disclosed is a thin film transistor which includes, over a substrate having an insulating surface, a gate insulating layer covering a gate electrode; a semiconductor layer which functions as a channel formation region; and a semiconductor layer including an impurity element imparting one conductivity type. The semiconductor layer exists in a state that a plurality of crystalline particles is dispersed in an amorphous silicon and that the crystalline particles have an inverted conical or inverted pyramidal shape. The crystalline particles grow approximately radially in a direction in which the semiconductor layer is deposited. Vertexes of the inverted conical or inverted pyramidal crystal particles are located apart from an interface between the gate insulating layer and the semiconductor layer.
摘要翻译：公开了一种薄膜晶体管，其在具有绝缘表面的衬底上方包括覆盖栅电极的栅绝缘层; 用作沟道形成区域的半导体层; 以及包含赋予一种导电型的杂质元素的半导体层。半导体层以多个结晶粒子分散在非晶硅中的状态存在，并且结晶粒子具有倒锥形或倒棱锥形状。晶体颗粒沿半导体层沉积的方向大致径向生长。倒锥形或倒锥形晶体颗粒的顶点位于与栅极绝缘层和半导体层之间的界面之外。

15. 发明申请

US20090218568A1 THIN FILM TRANSISOTR AND DISPLAY DEVICE 有权
标题翻译：薄膜透镜和显示器件
公开(公告)号：US20090218568A1
公开(公告)日：2009-09-03
申请号：US12391398
申请日：2009-02-24
申请人： Koji DAIRIKI , Takayuki IKEDA , Hidekazu MIYAIRI , Yoshiyuki KUROKAWA , Hiromichi GODO , Daisuke KAWAE , Takayuki INOUE , Satoshi KOBAYASHI
发明人： Koji DAIRIKI , Takayuki IKEDA , Hidekazu MIYAIRI , Yoshiyuki KUROKAWA , Hiromichi GODO , Daisuke KAWAE , Takayuki INOUE , Satoshi KOBAYASHI
IPC分类号： H01L29/786 , H01L33/00
CPC分类号： H01L29/78618 , H01L29/04 , H01L29/41733 , H01L29/4908 , H01L29/66765 , H01L29/78696
摘要： To improve problems with on-state current and off-state current of thin film transistors, a thin film transistor includes a pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added, provided with a space therebetween; a conductive layer which is overlapped, over the gate insulating layer, with the gate electrode and one of the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added; and an amorphous semiconductor layer which is provided successively between the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added in such a manner that the amorphous semiconductor layer extends over the gate insulating layer from the conductive layer and is in contact with both of the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added.
摘要翻译：为了改善薄膜晶体管的导通电流和截止电流的问题，薄膜晶体管包括一对杂质半导体层，赋予一种导电类型的杂质元素，在其间具有间隔; 在所述栅极绝缘层上与所述栅电极和添加了赋予一种导电类型的杂质元素的所述一对杂质半导体层中的一个重叠的导电层; 以及非晶半导体层，其被连续地设置在赋予一种导电类型的杂质元素的一对杂质半导体层之间，使得非晶半导体层从导电层延伸到栅极绝缘层上并且接触同时添加赋予一种导电类型的杂质元素的一对杂质半导体层。

16. 发明申请

US20120184064A1 METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE 失效
标题翻译：制造光电转换器件的方法
公开(公告)号：US20120184064A1
公开(公告)日：2012-07-19
申请号：US13426655
申请日：2012-03-22
申请人： Fumito ISAKA , Sho KATO , Koji DAIRIKI
发明人： Fumito ISAKA , Sho KATO , Koji DAIRIKI
IPC分类号： H01L31/20
CPC分类号： H01L31/1804 , H01L31/02168 , H01L31/022433 , H01L31/03762 , H01L31/0725 , H01L31/1864 , H01L31/202 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A fragile layer is formed in a region at a depth of less than 1000 nm from one surface of a single crystal semiconductor substrate, and a first impurity semiconductor layer and a first electrode are formed at the one surface side. After bonding the first electrode and a supporting substrate, the single crystal semiconductor substrate is separated using the fragile layer or the vicinity as a separation plane, thereby forming a first single crystal semiconductor layer over the supporting substrate. An amorphous semiconductor layer is formed on the first single crystal semiconductor layer, and a second single crystal semiconductor layer is formed by heat treatment for solid phase growth of the amorphous semiconductor layer. A second impurity semiconductor layer having a conductivity type opposite to that of the first impurity semiconductor layer and a second electrode are formed over the second single crystal semiconductor layer.
摘要翻译：在单晶半导体衬底的一个表面的深度小于1000nm的区域形成脆性层，在一个表面侧形成第一杂质半导体层和第一电极。在接合第一电极和支撑衬底之后，使用脆弱层或附近分离单晶半导体衬底作为分离平面，从而在支撑衬底上形成第一单晶半导体层。在第一单晶半导体层上形成非晶半导体层，通过对非晶半导体层的固相生长进行热处理形成第二单晶半导体层。在第二单晶半导体层上形成具有与第一杂质半导体层的导电类型相反的导电类型的第二杂质半导体层和第二电极。

17. 发明申请

US20120061676A1 THIN FILM TRANSISTOR 有权
标题翻译：薄膜晶体管
公开(公告)号：US20120061676A1
公开(公告)日：2012-03-15
申请号：US13226775
申请日：2011-09-07
申请人： Yuji EGI , Tetsuhiro TANAKA , Toshiyuki ISA , Hidekazu MIYAIRI , Koji DAIRIKI , Yoichi KUROSAWA , Kunihiko SUZUKI
发明人： Yuji EGI , Tetsuhiro TANAKA , Toshiyuki ISA , Hidekazu MIYAIRI , Koji DAIRIKI , Yoichi KUROSAWA , Kunihiko SUZUKI
IPC分类号： H01L29/04 , H01L29/786
CPC分类号： H01L29/78618 , H01L29/78648 , H01L29/78669 , H01L29/78678 , H01L29/78696
摘要： A highly reliable transistor in which change in electrical characteristics is suppressed is provided. A highly reliable transistor in which change in electrical characteristics is suppressed is manufactured with high productivity. A display device with less image deterioration over time is provided. An inverted staggered thin film transistor which includes, between a gate insulating film and impurity semiconductor films functioning as source and drain regions, a semiconductor stacked body including a microcrystalline semiconductor region and a pair of amorphous semiconductor regions. In the microcrystalline semiconductor region, the nitrogen concentration on the gate insulating film side is low and the nitrogen concentration in a region in contact with the amorphous semiconductor is high. Further, an interface with the amorphous semiconductor has unevenness.
摘要翻译：提供了其中抑制电特性变化的高度可靠的晶体管。以高生产率制造其中抑制电特性变化的高度可靠的晶体管。提供了具有随时间图像劣化的显示装置。一种倒置交错薄膜晶体管，其包括在栅极绝缘膜和用作源极和漏极区域的杂质半导体膜之间，包括微晶半导体区域和一对非晶半导体区域的半导体层叠体。在微晶半导体区域中，栅绝缘膜侧的氮浓度低，与非晶半导体接触的区域的氮浓度高。此外，与非晶半导体的界面具有不均匀性。

18. 发明申请

US20110220905A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110220905A1
公开(公告)日：2011-09-15
申请号：US13045840
申请日：2011-03-11
申请人： Hidekazu MIYAIRI , Koji DAIRIKI , Satoshi TORIUMI
发明人： Hidekazu MIYAIRI , Koji DAIRIKI , Satoshi TORIUMI
IPC分类号： H01L29/786
CPC分类号： H01L29/78618 , H01L29/66742 , H01L29/78687 , H01L29/78696
摘要： In an inverted staggered thin film transistor, a microcrystalline silicon film and a silicon carbide film are provided between a gate insulating film and wirings serving as a source wiring and a drain wiring. The microcrystalline silicon film is formed on the gate insulating film side and the silicon carbide film is formed on the wiring side. In such a manner, a semiconductor device having favorable electric characteristics can be manufactured with high productivity.
摘要翻译：在倒置的交错薄膜晶体管中，在栅绝缘膜和用作源极布线和漏极布线的布线之间设置微晶硅膜和碳化硅膜。在栅极绝缘膜侧形成微晶硅膜，在布线侧形成碳化硅膜。以这种方式，可以以高生产率制造具有良好电特性的半导体器件。

19. 发明申请

US20100059748A1 METHOD FOR MANUFACTURING THIN FILM INTEGRATED CIRCUIT, AND ELEMENT SUBSTRATE 有权
标题翻译：制造薄膜集成电路和元件基板的方法
公开(公告)号：US20100059748A1
公开(公告)日：2010-03-11
申请号：US12613650
申请日：2009-11-06
申请人： Shunpei YAMAZAKI , Koji DAIRIKI
发明人： Shunpei YAMAZAKI , Koji DAIRIKI
IPC分类号： H01L29/04 , H01L21/50 , H01L25/16
CPC分类号： H01L27/1266 , G06K19/07749 , G06K19/07758 , H01L21/02667 , H01L21/02675 , H01L21/2026 , H01L27/1214 , H01L27/13 , H01L29/66757 , H01L29/78675
摘要： Application form of and demand for an IC chip formed with a silicon wafer are expected to increase, and further reduction in cost is required. An object of the invention is to provide a structure of an IC chip and a process capable of producing at a lower cost. In view of the above described object, one feature of the invention is to provide the steps of forming a separation layer over an insulating substrate and forming a thin film integrated circuit having a semiconductor film as an active region over the separation layer, wherein the thin film integrated circuit is not separated. There is less limitation on the shape of a mother substrate in the case of using the insulating substrate, when compared with the case of taking a chip out of a circular silicon wafer. Accordingly, reduction in cost of an IC chip can be achieved.
摘要翻译：预期由硅晶片形成的IC芯片的应用形式和需求将增加，并且需要进一步降低成本。本发明的目的是提供一种IC芯片的结构和能够以较低成本生产的方法。鉴于上述目的，本发明的一个特征是提供在绝缘基板上形成分离层并形成薄膜集成电路的步骤，该薄膜集成电路具有半导体薄膜作为分离层上的活性区域，其中薄的胶片集成电路不分离。与使用圆形硅晶片的情况相比，在使用绝缘基板的情况下，母基板的形状受到限制。因此，可以实现IC芯片的成本降低。

20. 发明申请

US20100029068A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE PRODUCTION SYSTEM 有权
标题翻译：半导体器件和半导体器件生产系统
公开(公告)号：US20100029068A1
公开(公告)日：2010-02-04
申请号：US12533401
申请日：2009-07-31
申请人： Atsuo ISOBE , Shunpei YAMAZAKI , Koji DAIRIKI , Hiroshi SHIBATA , Chiho KOKUBO , Tatsuya ARAO , Masahiko HAYAKAWA , Hidekazu MIYAIRI , Akihisa SHIMOMURA , Koichiro TANAKA , Mai AKIBA
发明人： Atsuo ISOBE , Shunpei YAMAZAKI , Koji DAIRIKI , Hiroshi SHIBATA , Chiho KOKUBO , Tatsuya ARAO , Masahiko HAYAKAWA , Hidekazu MIYAIRI , Akihisa SHIMOMURA , Koichiro TANAKA , Mai AKIBA
IPC分类号： H01L21/311 , H01L21/20
CPC分类号： H01L27/1222 , B23K26/0738 , H01L21/02354 , H01L21/02356 , H01L21/02675 , H01L21/02683 , H01L21/02686 , H01L21/02691 , H01L21/2026 , H01L21/32139 , H01L21/84 , H01L27/1214 , H01L27/1218 , H01L27/124 , H01L27/1255 , H01L27/1274 , H01L27/1281 , H01L27/1296 , H01L29/66757 , H01L29/78603 , H01L29/78675 , H01L29/78696 , Y10S118/90 , Y10T117/10 , Y10T117/1004 , Y10T117/1008
摘要： A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.
摘要翻译：提供了一种使用激光晶化方法的半导体器件制造系统，其可以避免在TFT的沟道形成区域中形成晶界，从而防止晶界大大降低TFT的迁移率，降低导通电流，并且提高截止电流。在绝缘膜上形成矩形或条纹图案凹陷和突出部分。在绝缘膜上形成半导体膜。通过沿着条形图案凹陷和绝缘膜的突出部分沿着矩形的长轴或短轴方向运行激光来对连续波激光照射半导体膜。尽管在激光中最优选连续波激光，但也可以在照射半导体膜时使用脉冲振荡激光。

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