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11. 发明授权

US06447600B1 Method of removing defects of single crystal material and single crystal material from which defects are removed by the method 有权
标题翻译：通过该方法去除缺陷的单晶材料和单晶材料的缺陷的去除方法
公开(公告)号：US06447600B1
公开(公告)日：2002-09-10
申请号：US09806550
申请日：2001-03-30
申请人： Jun Furukawa , Mitsuru Sudou , Tetsuya Nakai , Takao Fujikawa , Takuya Masui
发明人： Jun Furukawa , Mitsuru Sudou , Tetsuya Nakai , Takao Fujikawa , Takuya Masui
IPC分类号： C30B2502
CPC分类号： C30B29/06 , C30B29/40 , C30B29/42 , C30B29/48 , C30B33/00 , C30B33/02 , H01L21/3225 , H01L21/3228 , H01L21/324 , H01L21/3245
摘要： A hot isostatic pressing treatment is conducted for a single crystal body (11) in an atmosphere where the single crystal body (11) is stable, under a pressure of 0.2 to 304 MPa at a temperature which is 0.85 or more times the melting point in an absolute temperature unit of the single crystal body (11), for 5 minutes to 20 hours; and the single crystal body (11) is annealed. It is preferable that the atmosphere where the single crystal body (11) is stable is an inert gas atmosphere or an atmosphere containing vapor of a high vapor pressure element, and it is more preferable that the HIP treatment is conducted under a pressure of 10 to 200 MPa. Further, the single crystal body (11) may be an ingot of a silicon single crystal, a GaAs single crystal, an InP single crystal, a ZnS single crystal or a ZnSe single crystal, or a block or wafer obtained by slicing the ingot. In this way, there are expelled or dispersed those lattice defects such as vacancy type grown-in defects existing not only at the surface but also at the interior of the single crystal body (11), irrespectively of the size of the single crystal body (11).
摘要翻译：在单晶体（11）稳定的气氛中，在0.2〜304MPa的压力下，在0.85以上的熔点的温度下，对单晶体（11）进行热等静压处理单晶体（11）的绝对温度单位为5分钟〜20小时; 和单晶体（11）进行退火。优选单晶体（11）稳定的气氛是惰性气体气氛或含有高蒸气压元素的蒸汽的气氛，更优选的是，在10〜10的压力下进行HIP处理 200MPa。此外，单晶体（11）可以是硅单晶，GaAs单晶，InP单晶，ZnS单晶或ZnSe单晶的晶锭，或者通过将晶片切片而获得的块或晶片。以这种方式，不仅存在单晶体（11）的表面而且在内部存在空位型生长缺陷的晶格缺陷的排出或分散，而与单晶体的尺寸无关 11）。

12. 发明授权

US6029577A Dampening volume control apparatus for offset press and a method for controlling dampening volume therefor 失效
标题翻译：用于胶版印刷机的减震音量控制装置和用于控制其抑制音量的方法
公开(公告)号：US6029577A
公开(公告)日：2000-02-29
申请号：US34252
申请日：1998-03-04
申请人： Shigeki Fukuoka , Tetsuya Nakai
发明人： Shigeki Fukuoka , Tetsuya Nakai
IPC分类号： B41F7/26 , B41F33/00 , B41F33/10 , B41F7/06
CPC分类号： B41F33/0054
摘要： It is an object of the present invention to provide a dampening volume control apparatus capable of shortening a period of time for adjusting a desired value of characteristics. A switch SW1 is a switch for switching the apparatus either in an automatic control mode or a manual control mode. A dampening volume of the dampening solution being stored in a manual dampening volume storing means 21 is varied by adjusting a switch SW21 and/or a switch 22. Revolution speed of a motor 25 is controlled by a controller 23 in accordance with the dampening volume thus varied. The switch SW1 is turned to the automatic control mode when the operator judges that quality of printing done on the printed papers is qualified to the criteria. The revolution speed of the motor 25 is controlled so as to make the dampening volume on the plate surface coincide with the volume corresponding to the desired value during the automatic control condition.
摘要翻译：本发明的目的是提供一种能够缩短用于调节期望特性值的时间段的阻尼体积控制装置。开关SW1是用于在自动控制模式或手动控制模式下切换装置的开关。通过调节开关SW21和/或开关22来调节存储在手动减振容积存储装置21中的阻尼溶液的阻尼体积。因此，电动机25的转速根据阻尼体积由控制器23控制，因此多变。当操作者判断在打印纸上完成的打印质量符合标准时，开关SW1转到自动控制模式。控制电动机25的转速，使得在自动控制状态下，板表面上的阻尼体积与对应于期望值的体积一致。

13. 发明授权

US6020991A Optical amplifier 失效
标题翻译：光放大器
公开(公告)号：US6020991A
公开(公告)日：2000-02-01
申请号：US140708
申请日：1998-08-26
申请人： Mimura Yoshinori , Yukio Noda , Tetsuya Nakai , Toshio Tani , Tomomi Sudo , Shunichi Ohno
发明人： Mimura Yoshinori , Yukio Noda , Tetsuya Nakai , Toshio Tani , Tomomi Sudo , Shunichi Ohno
IPC分类号： H01S3/10 , H01S3/06 , H01S3/067 , H01S3/094 , H01S3/16 , H04B10/29 , H04B10/294 , H01S3/091
CPC分类号： H04B10/291 , H01S3/094003 , H04B10/2912 , H01S3/1608 , H01S3/1613 , H01S3/1698
摘要： A 1.3 .mu.m-band optical amplifier includes an optical amplifying fiber doped with Yb ion for emitting light in 1.02 .mu.m band by pumping of the 0.98 .mu.m band light and Pr ion for amplifying signal light by pumping of the 1.02 .mu.m band light. Both ends of the optical amplifying fiber are connected to optical fiber gratings for selectively reflecting 1.02 .mu.m band light via matching connecting members and tapered core optical fibers. The optical fiber gratings form a 1.02 .mu.m-band resonator. A Wavelength Division Multiplexing (WDM) optical coupler multiplexes the signal light and pumping light from an pumping laser and supplies the thus-multiplexed light to the optical fiber grating. The pumping laser comprises a laser device which causes laser oscillation at 0.98 .mu.m. A 1.5 .mu.m-band optical amplifier having a similar configuration is also disclosed.
摘要翻译：一个1.3微米的带宽光放大器包括一个掺有Yb离子的光放大光纤，用于通过泵浦0.98微米光带和Pr离子来发射1.02微米的光，并通过泵浦1.02微米的光带来放大信号光。光放大光纤的两端连接到光纤光栅，用于通过匹配的连接元件和锥形芯光纤选择性地反射1.02μm的带状光。光纤光栅形成一个1.02微米的带隙谐振器。波分复用（WDM）光耦合器复用来自激光激光器的信号光和泵浦光，并将如此复用的光提供给光纤光栅。激光激光器包括使激光振荡在0.98μm的激光装置。还公开了具有相似配置的1.5μm带宽光放大器。

14. 发明授权

US4674835A Fluoride glass optical fiber 失效
标题翻译：氟化玻璃光纤
公开(公告)号：US4674835A
公开(公告)日：1987-06-23
申请号：US765477
申请日：1985-08-14
申请人： Yoshinori Mimura , Hideharu Tokiwa , Osamu Shinbori , Tetsuya Nakai
发明人： Yoshinori Mimura , Hideharu Tokiwa , Osamu Shinbori , Tetsuya Nakai
IPC分类号： C03C13/04 , G02B6/00 , G02B6/02
CPC分类号： C03C13/042 , Y10T428/2929
摘要： In a fluoride glass optical fiber with extremely small transmission loss for infrared light having a core layer and a clad layer each consisting mainly of ZrF.sub.4 - BaF.sub.2 - LaF.sub.3 - AlF.sub.3, NaF and H.sub.f F.sub.4 are used as additives to obtain a desired refractive index difference between the core layer and the clad layer. The mixing ratio of the NaF to the H.sub.f F.sub.4 satisfies the realtions;.vertline.0.25 .DELTA.H.sub.f F.sub.4 -3.DELTA.NaF.vertline..ltoreq.5,where .DELTA.NaF is the difference between the amount (mol %) of the N.sub.a F to be added to the core layer and that to be added to the clad layer, and .DELTA.H.sub.f F.sub.4 to be added to the core layer and that to be added to the clad layer.
摘要翻译：在具有芯层和包覆层的红外光传输损耗极小的氟化物玻璃光纤中，各自主要由ZrF4-BaF2-LaF3-AlF3组成，使用NaF和HfF4作为添加剂，以获得所需的折射率差芯层和包覆层。 NaF与HfF4的混合比满足实际要求; | 0.025 DELTA HfF4-3 DELTA NaF|

15. 发明授权

US07811878B2 Method of manufacturing SOI substrate 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US07811878B2
公开(公告)日：2010-10-12
申请号：US12423585
申请日：2009-04-14
申请人： Tetsuya Nakai , Bong-Gyun Ko , Takeshi Hamamoto , Takashi Yamada
发明人： Tetsuya Nakai , Bong-Gyun Ko , Takeshi Hamamoto , Takashi Yamada
IPC分类号： H01L21/8238
CPC分类号： H01L21/76243
摘要： To easily and accurately flush a substrate surface serving an SOI area with a substrate surface serving as a bulk area, make a buried oxide film, and prevent an oxide film from being exposed on substrate surface. After partially forming a mask oxide film 23 on the surface of a substrate 12 constituted of single crystal silicon, oxygen ions 16 are implanted into the surface of the substrate through the mask oxide film, and the substrate is annealed to form an buried oxide film 13 inside the substrate. Further included is a step of forming a predetermined-depth concave portion 12c deeper than substrate surface 12b serving as a bulk area on which the mask oxide film is formed on the substrate surface 12a serving as an SOI area by forming a thermally grown oxide film 21 on the substrate surface 12a serving as an SOI area on which the mask oxide film is not formed between the step of forming the mask oxide film and the step of implanting oxygen ions.
摘要翻译：为了容易且准确地将用作SOI区域的基板表面与用作主体区域的基板表面冲洗，形成掩埋氧化膜，并且防止氧化膜暴露在基板表面上。在由单晶硅构成的基板12的表面上部分地形成掩模氧化膜23之后，通过掩模氧化膜将氧离子16注入基板的表面，并将基板退火以形成掩埋氧化膜13 在基板内。进一步包括通过形成热生长氧化物膜21，形成比作为其上形成有掩模氧化膜的体积面的衬底表面12b更深的预定深度凹部12c的步骤，该衬底表面12b形成在用作SOI区域的衬底表面12a上在形成掩模氧化膜的步骤和注入氧离子的步骤之间作为其上未形成掩模氧化物膜的SOI区域的衬底表面12a上。

16. 发明申请

US20070117361A1 Method for Manufacturing an SOI Substrate 失效
标题翻译：制造SOI衬底的方法
公开(公告)号：US20070117361A1
公开(公告)日：2007-05-24
申请号：US11561195
申请日：2006-11-17
申请人： Tetsuya Nakai
发明人： Tetsuya Nakai
IPC分类号： H01L21/425 , H01L23/58
CPC分类号： H01L21/76243 , Y10S438/926 , Y10S438/948
摘要： A substrate surface serving as an SOI region and a substrate surface serving as a bulk region are made to form the same plane easily and highly accurately, a thickness of a buried oxide film is made uniform, and the buried oxide film is also prevented from being exposed on the substrate surface. After partially forming a mask oxide film (19) on a surface of a silicon substrate (12), an oxygen ions (16) are implanted into the surface of the substrate through this mask oxide film, and the substrate is further subjected to annealing treatment to form a buried oxide film (13) inside the substrate. Between the step of forming the mask oxide film and the step of implanting the oxygen ions, a recess portion (12c) with a predetermined depth deeper than a substrate surface (12b) serving as the bulk region where the mask oxide film has been formed is formed in a substrate surface (12a) serving as the SOI region where the mask oxide film is not formed.
摘要翻译：使作为SOI区域的基板表面和用作体区的基板表面容易且高精度地形成相同的平面，使掩埋氧化膜的厚度均匀，并且还防止了掩埋氧化膜暴露在基板表面上。在硅衬底（12）的表面上部分地形成掩模氧化膜（19）之后，通过该掩模氧化膜将氧离子（16）注入到衬底的表面中，并进一步对衬底进行退火处理以在衬底内形成掩埋氧化膜（13）。在形成掩模氧化膜的步骤和注入氧离子的步骤之间，具有比衬底表面（12b）更深的预定深度的凹陷部分（12c），该衬底表面用作掩模氧化膜已经被覆盖的主体区域形成在用作未形成掩模氧化膜的SOI区域的衬底表面（12a）中。

17. 发明申请

US20070077718A1 Process for manufacturing silicon-on-insulator substrate 有权
标题翻译：用于制造绝缘体上硅衬底的工艺
公开(公告)号：US20070077718A1
公开(公告)日：2007-04-05
申请号：US11541385
申请日：2006-09-29
申请人： Tetsuya Nakai
发明人： Tetsuya Nakai
IPC分类号： H01L21/8222
CPC分类号： H01L21/76243
摘要： A process for manufacturing a silicon-on-insulator substrate comprising a single-crystal silicon substrate in which an oxide layer has been locally buried includes forming a step on the silicon substrate so that a region corresponding to the oxide layer has a greater surface height than other regions; then implanting oxygen ions in the silicon substrate so as to form the oxide layer.
摘要翻译：一种用于制造绝缘体上硅衬底的方法，包括其中已经局部掩埋了氧化物层的单晶硅衬底包括在硅衬底上形成台阶，使得与氧化物层相对应的区域具有比其他地区; 然后将氧离子注入到硅衬底中以形成氧化物层。

18. 发明授权

US5891265A SOI substrate having monocrystal silicon layer on insulating film 失效
标题翻译：在绝缘膜上具有单晶硅层的SOI衬底
公开(公告)号：US5891265A
公开(公告)日：1999-04-06
申请号：US907073
申请日：1997-08-06
申请人： Tetsuya Nakai , Hiroshi Shinyashiki , Yasuo Yamaguchi , Tadashi Nishimura
发明人： Tetsuya Nakai , Hiroshi Shinyashiki , Yasuo Yamaguchi , Tadashi Nishimura
IPC分类号： H01L21/20 , H01L21/02 , H01L21/265 , H01L21/322 , H01L21/324 , H01L21/76 , H01L21/762 , H01L27/00 , H01L27/12
CPC分类号： H01L21/324 , H01L21/26533 , H01L21/76243
摘要： Oxygen ion is implanted into a silicon substrate to remain a silicon layer on a surface of the silicon substrate. In this state, a silicon oxide layer is formed under the silicon layer. Silicon oxide particles are formed and remained in the residual silicon layer. While maintaining this state, the silicon substrate is heated to a predetermined temperature not less than 1300.degree. C. Alternatively, the silicon substrate is heated at a high temperature-rise rate to 900-1100.degree. C., and thereafter is heated at a low temperature-rise rate to the temperature not less than 1300.degree. C. The silicon substrate is held at the predetermined temperature not less than 1300.degree. C. for a predetermined time, whereby crystallinity of the residual silicon layer is restored. A pinning effect of the silicon oxide particles prevents the rise of dislocation to the surface of the SOI layer, and also suppresses a rate per a unit time at which interstitial silicon generates during the heating to the high temperature region. Therefore, a dislocation density of the SOI layer can be reduced.
摘要翻译：将氧离子注入硅衬底中以在硅衬底的表面上保留硅层。在该状态下，在硅层的下方形成氧化硅层。形成氧化硅颗粒并残留在残余硅层中。在保持该状态的同时，将硅衬底加热到不低于1300℃的预定温度。或者，将硅衬底以高升温速率加热至900-1100℃，然后在低温下加热温度升至不低于1300℃的温度。硅衬底在预定温度不低于1300℃保持预定时间，从而恢复残留硅层的结晶度。氧化硅颗粒的钉扎效应防止了位于SOI层表面的位错的上升，并且还抑制了在向高温区域加热期间间隙硅产生的每单位时间的速率。因此，可以降低SOI层的位错密度。

19. 发明授权

US5741717A Method of manufacturing a SOI substrate having a monocrystalline silicon layer on insulating film 失效
标题翻译：制造在绝缘膜上具有单晶硅层的SOI衬底的方法
公开(公告)号：US5741717A
公开(公告)日：1998-04-21
申请号：US391283
申请日：1995-02-21
申请人： Tetsuya Nakai , Hiroshi Shinyashiki , Yasuo Yamaguchi , Tadashi Nishimura
发明人： Tetsuya Nakai , Hiroshi Shinyashiki , Yasuo Yamaguchi , Tadashi Nishimura
IPC分类号： H01L21/20 , H01L21/02 , H01L21/265 , H01L21/322 , H01L21/324 , H01L21/76 , H01L21/762 , H01L27/00 , H01L27/12
CPC分类号： H01L21/324 , H01L21/26533 , H01L21/76243
摘要： Oxygen ion is implanted into a silicon substrate to remain a silicon layer on a surface of the silicon substrate. In this state, a silicon oxide layer is formed under the silicon layer. Silicon oxide particles are formed and remained in the residual silicon layer. While maintaining this state, the silicon substrate is heated to a predetermined temperature not less than 1300.degree. C. Alternatively, the silicon substrate is heated at a high temperature-rise rate to 900.degree.-1100.degree. C., and thereafter is heated at a low temperature-rise rate to the temperature not less than 1300.degree. C. The silicon substrate is held at the predetermined temperature not less than 1300.degree. C. for a predetermined time, whereby crystallinity of the residual silicon layer is restored. A pinning effect of the silicon oxide particles prevents the rise of dislocation to the surface of the SOI layer, and also suppresses a rate per a unit time at which interstitial silicon generates during the heating to the high temperature region. Therefore, a dislocation density of the SOI layer can be reduced.
摘要翻译：将氧离子注入硅衬底中以在硅衬底的表面上保留硅层。在该状态下，在硅层的下方形成氧化硅层。形成氧化硅颗粒并残留在残余硅层中。在保持该状态的同时，将硅衬底加热到不低于1300℃的预定温度。或者，将硅衬底以高升温速率加热到900-111℃，然后在低温升温速率不低于1300℃。硅衬底在预定温度不低于1300℃保持预定时间，从而恢复残余硅层的结晶度。氧化硅颗粒的钉扎效应防止了位于SOI层表面的位错上升，并且还抑制了在加热到高温区域期间间隙硅产生的每单位时间的速率。因此，可以降低SOI层的位错密度。

20. 发明授权

US5708752A Fluoride optical fiber for high power laser transmission 失效
标题翻译：氟化物光纤用于大功率激光传输
公开(公告)号：US5708752A
公开(公告)日：1998-01-13
申请号：US672538
申请日：1996-06-28
申请人： Yukio Noda , Yoshinori Mimura , Tetsuya Nakai , Toshio Tani
发明人： Yukio Noda , Yoshinori Mimura , Tetsuya Nakai , Toshio Tani
IPC分类号： C03C13/04 , G02B6/02 , G02B6/10 , G02B6/00
CPC分类号： G02B6/102 , C03C13/042 , G02B6/02
摘要： A high power laser transmitting fluoride glass fiber of an enhanced 2.94- .mu.m laser damage threshold value is disclosed, in which either of the core with a high refractive index and the cladding with a low refractive index is formed of fluoride glass which contains fluorine (F) as a component but has it substituted with 0 to 4.1 mol % of bromine (Br), chlorine (Cl), or bromine and chlorine. The optical fiber of the present invention may have its core formed of fluoride glass and its cladding formed of fluorine-contained resin, and the core glass has a composition that 70 to 80% of fluorine (F) is substituted with 0 to 4.1 mol % of bromine (Br), or chlorine (Cl), or bromine and chlorine.
摘要翻译：公开了一种具有增强的2.94μm激光损伤阈值的高功率激光透射氟化物玻璃纤维，其中具有高折射率的芯中的任一种和具有低折射率的包层由含氟的氟化物玻璃形成（ F）作为组分，但是用0至4.1mol％的溴（Br），氯（Cl）或溴和氯代替。本发明的光纤可以具有由氟化物玻璃形成的芯和由含氟树脂形成的包层，芯玻璃具有70〜80％的氟（F）被0〜4.1摩尔％的溴（Br）或氯（Cl），或溴和氯。

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