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11. 发明申请

US20100155373A1 PLASMA TORCH, PLASMA TORCH NOZZLE, AND PLASMA-WORKING MACHINE 有权
标题翻译：等离子喷枪，等离子喷枪喷嘴和等离子工作机
公开(公告)号：US20100155373A1
公开(公告)日：2010-06-24
申请号：US12600616
申请日：2008-06-27
申请人： Yoshihiro Yamaguchi , Kazuhiro Kuraoka
发明人： Yoshihiro Yamaguchi , Kazuhiro Kuraoka
IPC分类号： B23K10/00
CPC分类号： H05H1/34 , H05H2001/3426 , H05H2001/3457
摘要： A plasma torch includes a torch main unit and a nozzle. The torch main unit has a nozzle seat member on which the nozzle is mounted. The nozzle is arranged to move toward or away from the nozzle seat member in a direction substantially parallel to a center axis of the nozzle when the nozzle is mounted on or removed from the nozzle seat member. The nozzle has an electroconductive surface facing the nozzle seat member. The torch main unit has an elastic electric contact portion contacting with the electroconductive surface of the nozzle to form an electroconductive path for a pilot arc to the nozzle. The electroconductive surface of the nozzle presses the electric contact portion in the direction substantially parallel to the center axis when the nozzle is moved toward the nozzle seat member to mount the nozzle on the nozzle seat member.
摘要翻译：等离子体焰炬包括火炬主单元和喷嘴。割炬主体具有安装喷嘴的喷嘴座构件。喷嘴被布置成当喷嘴安装在喷嘴座构件上或从喷嘴座构件移除时沿大致平行于喷嘴的中心轴线的方向朝向或远离喷嘴座构件移动。喷嘴具有面向喷嘴座构件的导电表面。手电筒主体具有与喷嘴的导电表面接触的弹性电接触部分，以形成用于引导电弧到喷嘴的导电路径。当喷嘴朝向喷嘴座构件移动以将喷嘴安装在喷嘴座构件上时，喷嘴的导电表面在基本上平行于中心轴线的方向上按压电接触部分。

12. 发明授权

US07711190B2 Imaging device, imaging method and imaging program 有权
标题翻译：成像设备，成像方法和成像程序
公开(公告)号：US07711190B2
公开(公告)日：2010-05-04
申请号：US11365671
申请日：2006-03-02
申请人： Yoshihiro Yamaguchi
发明人： Yoshihiro Yamaguchi
IPC分类号： G06K9/00
CPC分类号： G06K9/00281 , G03B7/08 , G03B17/00 , H04N5/232 , H04N5/23219
摘要： The present invention provides an imaging device comprising an imaging unit for photographing an image, a face extracting unit for extracting a face region including a person's face part from said image, a rating calculation unit for calculating a rating from said extracted face region, a threshold setting unit for accepting setting of a threshold for said rating, and a photograph indicating unit for indicating re-photograph based on comparison of said rating and said threshold. According to the imaging device of the present invention, re-photograph is indicated based on comparison of the rating and the threshold. A user can easily obtain a satisfactory image by repeating photograph until the rating obtained from the face region reaches the threshold.
摘要翻译：本发明提供了一种成像装置，其特征在于，具备拍摄图像的摄像部件，从所述图像中提取包含人脸部的面部区域的脸部提取部，从所述提取的面部区域计算出评价值的评价计算部，用于接受所述评级的阈值的设置的设置单元，以及基于所述评级和所述阈值的比较来指示重新拍摄的照片指示单元。根据本发明的成像装置，基于评级和阈值的比较来指示重新拍摄。用户可以通过重复照片容易地获得令人满意的图像，直到从脸部区域获得的评分达到阈值。

13. 发明授权

US07674998B2 Cutting machine 失效
标题翻译：切割机
公开(公告)号：US07674998B2
公开(公告)日：2010-03-09
申请号：US11597286
申请日：2005-05-26
申请人： Satoshi Ohnishi , Yoshihiro Yamaguchi
发明人： Satoshi Ohnishi , Yoshihiro Yamaguchi
IPC分类号： B23K9/00
CPC分类号： B23K26/38 , B23K7/00 , B23K9/013 , B23K9/325 , B23K10/00 , B23K26/0876 , B23K26/142 , B23K37/0229 , B23K37/0461 , B23K2101/18 , Y10T83/05 , Y10T83/7693
摘要： To enable the amount of air capable of bringing smoke to the vicinity of a discharge opening of a gas discharge chamber to be sent into the gas discharge chamber. A cutting machine has gas discharge chambers arranged side by side by partitioning the inside of a table, blower openings each provided on one end side of a gas discharge chamber, gas discharge openings each provided on the other side of the gas discharge chamber, and fans for sending air, while moving to the outside of the table, to at least one gas discharge chamber from the blower opening of the gas discharge chamber and arranged in the direction of the movement. The fans are arranged at intervals such that two or more fans face the blower opening of one gas discharge chamber, and the two or more fans can simultaneously send air to the one gas discharge chamber.
摘要翻译：使能够将气体排出到排气室的排气口附近的空气量送入气体排出室。切割机具有通过分隔桌子内侧并排布置的排气室，设置在排气室的一端侧的鼓风机开口，设置在气体排出室的另一侧的气体排出口，以及风扇用于在从桌子的外部移动到从气体排出室的鼓风机开口至少一个排气室的同时沿着运动方向布置的空气。风扇间隔布置，使得两个或更多个风扇面对一个气体放电室的鼓风机开口，并且两个或更多个风扇可以同时向一个气体放电室发送空气。

14. 发明申请

US20100032890A1 SHEET FEEDING DEVICE AND IMAGE FORMING APPARATUS INCLUDING SHEET FEEDING DEVICE 有权
标题翻译：纸张送料装置和图像形成装置，包括纸张送料装置
公开(公告)号：US20100032890A1
公开(公告)日：2010-02-11
申请号：US12536755
申请日：2009-08-06
申请人： Keiji Okumura , Yoshio Sugishima , Yoshihiro Yamaguchi
发明人： Keiji Okumura , Yoshio Sugishima , Yoshihiro Yamaguchi
IPC分类号： B65H5/22 , B65H1/08
CPC分类号： B65H3/0607 , B65H3/48 , B65H3/60 , B65H2301/5143 , B65H2601/273
摘要： A sheet feeding device has a sheet accommodating portion for accommodating a sheet stack, a sheet carrying plate for carrying the sheet stack and a pickup roller that dispatches the uppermost sheet of the stack. An elevator displaces the sheet carrying plate between a sheet feeding position where an upper face of the sheet stack contacts the pickup roller and a separating position where the upper face of the sheet stack is separated from the pickup roller. A first warm air mechanism blows warm air toward a side face of the sheet stack. A controller causes the first warm air mechanism to blow warm air to the side face of the sheet stack and causes the elevator to displace the sheet carrying plate between the sheet feeding position and the separating position.
摘要翻译：片材进给装置具有用于容纳片材堆叠的片材容纳部分，用于承载片材堆叠的片材承载板和分配堆叠的最上面的片材的拾取辊。升降机将片材承载板置于纸张堆叠的上表面接触拾取辊的送纸位置和纸张堆叠的上表面与拾取辊分离的分离位置之间移动。第一暖空气机构将热空气吹向片材堆叠的侧面。控制器使得第一暖空气机构将热空气吹送到片材堆叠的侧面，并使电梯在片材进给位置和分离位置之间移动片材承载板。

15. 发明授权

US07605183B2 Inhibitory or blocking agents of molecular generating and/or inducing functions 失效
标题翻译：分子产生和/或诱导功能的抑制剂或阻断剂
公开(公告)号：US07605183B2
公开(公告)日：2009-10-20
申请号：US11889162
申请日：2007-08-09
申请人： Shozo Koyama , Yoshihiro Yamaguchi
发明人： Shozo Koyama , Yoshihiro Yamaguchi
IPC分类号： A61K31/122 , C07C49/607
CPC分类号： C11D3/0084 , A01N35/06 , A61K8/35 , A61K31/12 , A61K31/122 , A61K31/13 , A61K31/40 , A61K31/445 , A61Q5/02 , A61Q19/00 , C08F2/38
摘要： A method for inhibiting or blocking molecular generating and/or inducing functions of molecules using an inhibitory or blocking agent of the formula: wherein R1-6 are as defined herein.
摘要翻译：使用下式的抑制性或阻断剂抑制或阻断分子产生和/或诱导分子功能的方法：其中R1-6如本文所定义。

16. 发明授权

US07485921B2 Trench gate type MOS transistor semiconductor device 失效
标题翻译：沟槽型MOS晶体管半导体器件
公开(公告)号：US07485921B2
公开(公告)日：2009-02-03
申请号：US11674337
申请日：2007-02-13
申请人： Yusuke Kawaguchi , Yoshihiro Yamaguchi , Syotaro Ono , Miwako Akiyama
发明人： Yusuke Kawaguchi , Yoshihiro Yamaguchi , Syotaro Ono , Miwako Akiyama
IPC分类号： H01L29/78
CPC分类号： H01L29/7811 , H01L29/0615 , H01L29/0634 , H01L29/1095 , H01L29/402 , H01L29/41741 , H01L29/41766 , H01L29/7813
摘要： This semiconductor device comprises a first semiconductor layer of a first conductivity type, an epitaxial layer of a first conductivity type formed in the surface on the first semiconductor layer, and a base layer of a second conductivity type formed on the surface of the epitaxial layer. Column layers of a second conductivity type are repeatedly formed in the epitaxial layer under the base layer at a certain interval. Trenches are formed so as to penetrate the base layer to reach the epitaxial layer; and gate electrodes are formed in the trenches via a gate insulation film. A termination layer of a second conductivity type is formed on the epitaxial layer at an end region at the perimeter of the base layer. The termination layer is formed to have a junction depth larger than that of the base layer.
摘要翻译：该半导体器件包括形成在第一半导体层表面上的第一导电类型的第一半导体层，第一导电类型的外延层和形成在外延层的表面上的第二导电类型的基极层。第二导电类型的列层以一定间隔在基底层下的外延层中重复形成。形成沟槽以穿透基底层以到达外延层; 并且栅电极经由栅极绝缘膜形成在沟槽中。在基底层的周边的端部区域，在外延层上形成第二导电类型的端接层。端接层形成为具有大于基底层的结深度的结深度。

17. 发明授权

US07479678B2 Semiconductor element and method of manufacturing the same 失效
标题翻译：半导体元件及其制造方法
公开(公告)号：US07479678B2
公开(公告)日：2009-01-20
申请号：US11485284
申请日：2006-07-13
申请人： Syotaro Ono , Wataru Saito , Yusuke Kawaguchi , Yoshihiro Yamaguchi
发明人： Syotaro Ono , Wataru Saito , Yusuke Kawaguchi , Yoshihiro Yamaguchi
IPC分类号： H01L29/76
CPC分类号： H01L29/7813 , H01L29/0634 , H01L29/0696 , H01L29/4236 , H01L29/66727 , H01L29/66734
摘要： A semiconductor element is provided, comprising a first semiconductor layer of the first conduction type; and a pillar layer including first semiconductor pillars of the first conduction type and second semiconductor pillars of the second conduction type arranged periodically and alternately on the first semiconductor layer. A semiconductor base layer of the second conduction type is formed on the upper surface of the pillar layer, And a second semiconductor layer of the first conduction type is formed on the upper surface of the semiconductor base layer. A control electrode of the trench gate type is formed in a trench, which is formed in depth through the semiconductor base layer to the first semiconductor pillar. The control electrode is tapered such that the width thereof decreases with the distance from a second main electrode toward a first main electrode and the tip thereof locates almost at the center of the first semiconductor pillar.
摘要翻译：提供一种半导体元件，包括第一导电类型的第一半导体层; 以及第一导电型的第一半导体柱和第二导电型的第二半导体柱在第一半导体层上周期性且交替地配置的柱层。第二导电类型的半导体基层形成在柱层的上表面上，第一导电类型的第二半导体层形成在半导体基层的上表面上。沟槽栅型的控制电极形成在沟槽中，该沟槽通过半导体基底层向第一半导体柱形成深度。控制电极是锥形的，使得其宽度随着从第二主电极朝向第一主电极的距离而减小，并且其尖端几乎位于第一半导体柱的中心。

18. 外观设计

USD582951S1 Nozzle for plasma cutting machine 有权
公开(公告)号：USD582951S1
公开(公告)日：2008-12-16
申请号：US29290753
申请日：2008-01-10
申请人： Yoshihiro Yamaguchi , Kazuhiro Kuraoka
设计人： Yoshihiro Yamaguchi , Kazuhiro Kuraoka

19. 发明授权

US07400007B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US07400007B2
公开(公告)日：2008-07-15
申请号：US11305202
申请日：2005-12-19
申请人： Syotaro Ono , Yusuke Kawaguchi , Yoshihiro Yamaguchi , Hirobumi Matsuki , Kiyotaka Arai
发明人： Syotaro Ono , Yusuke Kawaguchi , Yoshihiro Yamaguchi , Hirobumi Matsuki , Kiyotaka Arai
IPC分类号： H01L27/108
CPC分类号： H01L29/7813 , H01L29/0696
摘要： A power MOSFET includes an n-type drift layer and a p-type base layer formed in a layered manner on the n-type drift layer. Trench gates are formed to penetrate the p-type base layer to reach the n-type drift layer. On the p-type base layer, n+-type source regions and p+-type regions are formed. These n+-type source regions and p+-type regions are arranged alternately along a longitudinal direction of the trench gates. The n+-type source regions and the p+-type regions are arranged with a slant with respect to the longitudinal direction of the trench gates.
摘要翻译：功率MOSFET包括在n型漂移层上分层形成的n型漂移层和p型基极层。形成沟槽栅极以穿透p型基极层以到达n型漂移层。在p型基底层上形成n + +型源区和p + + +型区。这些n + + +型源极区域和p + + +区域沿沟槽栅极的纵向方向交替布置。相对于沟槽栅极的纵向方向，n + P +型源极区域和p + H +型区域以倾斜的方式排列。

20. 发明申请

US20080116512A1 SEMICONDUCTOR DEVICE AND METHOD OF MAKING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080116512A1
公开(公告)日：2008-05-22
申请号：US11943181
申请日：2007-11-20
申请人： Yusuke Kawaguchi , Miwako Akiyama , Yoshihiro Yamaguchi
发明人： Yusuke Kawaguchi , Miwako Akiyama , Yoshihiro Yamaguchi
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7811 , H01L29/0634 , H01L29/1095 , H01L29/41766 , H01L29/66727 , H01L29/66734 , H01L29/7813
摘要： A semiconductor device includes a first conductivity type layer and a second conductivity type layer, which are alternately and repeatedly positioned, adjacent to each other, in a column-like fashion on a first conductivity type substrate. The balance of the net charge amount of the impurity between the first conductivity type layer formed under a second conductivity type base layer in the termination region of the semiconductor device and the second conductivity type layer adjacent to the first conductivity type layer is imbalanced in comparison to the balance of the net charge amount of the impurity between the first conductivity type layer in the device-forming region of the semiconductor device and the second conductivity type layer adjacent to the first conductivity type layer.
摘要翻译：半导体器件包括在第一导电类型衬底上以列状方式彼此相邻地交替地和重复地定位的第一导电类型层和第二导电类型层。半导体器件的端接区域内的第二导电型基底层下方形成的第一导电型层与第一导电型层相邻的第二导电型层之间的杂质的净电荷量的平衡与第半导体器件的器件形成区域中的第一导电型层与第一导电型层相邻的第二导电型层之间的杂质的净电荷量的平衡。

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