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11. 发明授权

US06844204B2 Magnetic random access memory 有权
标题翻译：磁性随机存取存储器
公开(公告)号：US06844204B2
公开(公告)日：2005-01-18
申请号：US10796061
申请日：2004-03-10
申请人： Yoshiaki Asao
发明人： Yoshiaki Asao
IPC分类号： G11C11/15 , G11C11/00 , H01L21/00 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L29/76 , H01L29/78 , H01L31/062 , H01L31/119 , H01L43/08
CPC分类号： H01L43/08 , B82Y10/00 , H01L27/224 , H01L27/228
摘要： A data selection line (write line) is disposed right on a MTJ element. Upper and side surfaces of the data selection line are coated with yoke materials which have a high permeability. The yoke materials are separated from each other by a barrier layer. Similarly, a write word line is disposed right under the MTJ element. The lower and side surfaces of the write word line are also coated with the yoke materials which have the high permeability. The yoke materials on the lower and side surfaces of the write word line are also separated from each other by the barrier layer.
摘要翻译：数据选择线（写入线）被放置在MTJ元件上。数据选择线的上表面和侧表面涂覆有磁导率高的磁轭材料。磁轭材料通过阻挡层彼此分离。类似地，写字线被布置在MTJ元件的正下方。写字线的下表面和侧表面也涂有具有高磁导率的磁轭材料。写字线的下表面和侧表面上的轭材料也通过阻挡层彼此分离。

12. 发明授权

US06717845B2 Magnetic memory 有权
标题翻译：磁记忆
公开(公告)号：US06717845B2
公开(公告)日：2004-04-06
申请号：US10345253
申请日：2003-01-16
申请人： Yoshiaki Saito , Katsuya Nishiyama , Shigeki Takahashi , Minoru Amano , Tomomasa Ueda , Hiroaki Yoda , Yoshiaki Asao , Yoshihisa Iwata , Tatsuya Kishi
发明人： Yoshiaki Saito , Katsuya Nishiyama , Shigeki Takahashi , Minoru Amano , Tomomasa Ueda , Hiroaki Yoda , Yoshiaki Asao , Yoshihisa Iwata , Tatsuya Kishi
IPC分类号： G11C1115
CPC分类号： G11C11/16
摘要： A magnetic memory includes: a magnetoresistance effect element having a magnetic recording layer; a first wiring extending in a first direction on or below the magnetoresistance effect element; a covering layer provided at least both sides of the first wiring, the covering layer being made of magnetic material, and the covering layer having a uniaxial anisotropy in the first direction along which a magnetization of the covering layer occurs easily; and a writing circuit configured to pass a current through the first wiring in order to record an information in the magnetic recording layer by a magnetic field generated by the current.
摘要翻译：磁存储器包括：具有磁记录层的磁阻效应元件; 在所述磁阻效应元件上或第二方向上延伸的第一布线; 所述覆盖层至少设置在所述第一布线的两侧，所述覆盖层由磁性材料制成，所述覆盖层在容易发生所述覆盖层的磁化的第一方向上具有单轴各向异性; 以及写入电路，被配置为使电流通过第一布线，以便通过由电流产生的磁场将信息记录在磁记录层中。

13. 发明授权

US5032528A Method of forming a contact hole in semiconductor integrated circuit 失效
标题翻译：在半导体集成电路中形成接触孔的方法
公开(公告)号：US5032528A
公开(公告)日：1991-07-16
申请号：US538764
申请日：1990-06-15
申请人： Yoshiaki Asao , Shizuo Sawada
发明人： Yoshiaki Asao , Shizuo Sawada
IPC分类号： H01L21/28 , H01L21/316 , H01L21/768
CPC分类号： H01L21/02238 , H01L21/02255 , H01L21/02299 , H01L21/31662 , H01L21/76802
摘要： Regions having different impurity concentrations are formed in the main surface region of the semiconductor substrate. Accordingly, when the substrate is oxidized, oxide films having different thickness are formed. More specifically, the oxide film is formed more deeply on the surface region of the substrate having a high impurity concentration in which ions are injected than on the surface region in which no ions are injected. In the etching step, since the thinner oxide film is removed while the thicker oxide film remains, the surface of the region under the thinner oxide film is exposed, and thus a contact hole is formed. If, in the step of forming a contact hole, a portion of the thinner oxide film is covered by a resist pattern, only the regiion of the oxide film which is not masked by the resist pattern is etched and the substrate surface thereunder is exposed, and thus a contact hole is formed.

14. 发明授权

US09035402B2 Semiconductor memory device 有权
标题翻译：半导体存储器件
公开(公告)号：US09035402B2
公开(公告)日：2015-05-19
申请号：US13963710
申请日：2013-08-09
申请人： Yoshiaki Asao , Hideaki Harakawa
发明人： Yoshiaki Asao , Hideaki Harakawa
IPC分类号： H01L43/08 , H01L27/22 , G11C11/16
CPC分类号： H01L27/228 , G11C11/161 , G11C11/165 , G11C11/1675 , H01L43/08
摘要： According to one embodiment, a semiconductor memory device comprises a cell transistor includes a first gate electrode buried in a semiconductor substrate and a first diffusion layer and a second diffusion layer formed to sandwich the first gate electrode, a first lower electrode formed on the first diffusion layer, a magnetoresistive element formed on the first lower electrode to store data according to a change in a magnetization state and connected to a bit line located above, a second lower electrode formed on the second diffusion layer, and a first contact formed on the second lower electrode and connected to a source line located above. A contact area between the second lower electrode and the second diffusion layer is larger than a contact area between the first contact and the second lower electrode.
摘要翻译：根据一个实施例，一种半导体存储器件包括：单元晶体管，包括埋在半导体衬底中的第一栅电极和形成为夹着第一栅电极的第一扩散层和第二扩散层;形成在第一扩散层上的第一下电极层，形成在所述第一下电极上以根据磁化状态的变化存储数据并连接到位于上方的位线的磁阻元件，形成在所述第二扩散层上的第二下电极，以及形成在所述第二扩散层上的第一触点下电极并连接到位于上方的源极线。第二下部电极和第二扩散层之间的接触面积大于第一接触部和第二下部电极的接触面积。

15. 发明授权

US08724377B2 Memory device and method for manufacturing the same 有权
标题翻译：存储器件及其制造方法
公开(公告)号：US08724377B2
公开(公告)日：2014-05-13
申请号：US13423700
申请日：2012-03-19
申请人： Takaya Yamanaka , Susumu Shuto , Yoshiaki Asao
发明人： Takaya Yamanaka , Susumu Shuto , Yoshiaki Asao
IPC分类号： G11C11/00
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/5607 , H01L27/228 , H01L43/12
摘要： According to one embodiment, a memory device includes: a first signal line; a second signal line; a transistor; a first memory region; and a second memory region. The transistor controls a conduction of each of a current flowing between the first and the second signal lines and an opposite current. The first memory region has a first magnetic tunnel junction element. A magnetization direction thereof becomes parallel when a current flows in one direction, and the magnetization direction becomes antiparallel when a current in another direction. The second memory region has a second magnetic tunnel junction element. A magnetization direction thereof becomes parallel when a current flows in one direction, and becomes antiparallel when a current flows in another first direction.
摘要翻译：根据一个实施例，存储器件包括：第一信号线; 第二信号线; 晶体管第一存储区; 和第二存储器区域。晶体管控制在第一和第二信号线之间流动的电流和相反电流的导通。第一存储区具有第一磁隧道结元件。当电流沿一个方向流动时，其磁化方向变得平行，并且当另一个方向上的电流时，磁化方向变得反平行。第二存储器区域具有第二磁性隧道结元件。当电流沿一个方向流动时，其磁化方向变得平行，并且当电流在另一个第一方向上流动时，其磁化方向变得反平行。

16. 发明申请

US20120281461A1 SEMICONDUCTOR STORAGE DEVICE 有权
标题翻译：半导体存储设备
公开(公告)号：US20120281461A1
公开(公告)日：2012-11-08
申请号：US13419258
申请日：2012-03-13
申请人： Yoshiaki Asao
发明人： Yoshiaki Asao
IPC分类号： G11C11/16
CPC分类号： G11C5/063 , G11C11/161 , G11C11/1659
摘要： A memory includes MTJ elements. Active areas are separated to correspond to cell transistors, respectively, and extend in a first direction substantially orthogonal to an extending direction of gates of the cell transistors. The active areas are arranged in the first direction and constitute a plurality of active area columns. Two active area columns adjacent in a second direction are arranged to be half-pitch staggered in the first direction. As viewed from above surfaces of the active areas, each MTJ element is arranged to overlap with one end of each of the active areas. The first and second wirings extend while being folded back in a direction inclined with respect to the first and second directions in order to overlap with the MTJ elements alternately in the adjacent active area columns.
摘要翻译：内存包括MTJ元素。有源区域分别对应于单元晶体管，并且在与单元晶体管的栅极的延伸方向基本正交的第一方向上延伸。有源区域沿第一方向布置并且构成多个有效区域列。在第二方向相邻的两个有效区列被布置为在第一方向上半间距交错。从有源区域的上表面观察，每个MTJ元件被布置成与每个有源区域的一端重叠。第一和第二布线在相对于第一和第二方向倾斜的方向被折回的同时延伸，以便在相邻的有效区域列中交替地与MTJ元件重叠。

17. 发明授权

US08164147B2 Magnetic random access memory 有权
标题翻译：磁性随机存取存储器
公开(公告)号：US08164147B2
公开(公告)日：2012-04-24
申请号：US12022473
申请日：2008-01-30
申请人： Yoshiaki Asao
发明人： Yoshiaki Asao
IPC分类号： H01L29/82
CPC分类号： H01L27/228
摘要： A magnetic random access memory includes a first bit line and a second bit line, a source line formed for a group having the first bit line and the second bit line, adjacent to the first bit line, and running in a first direction in which the first bit line and the second bit line run, a first magnetoresistive effect element connected to the first bit line, a second magnetoresistive effect element connected to the second bit line, a first transistor connected in series with the first magnetoresistive effect element, and a second transistor connected in series with the second magnetoresistive effect element. A first cell having the first magnetoresistive effect element and the first transistor and a second cell having the second magnetoresistive effect element and the second transistor are connected together to the source line.
摘要翻译：磁性随机存取存储器包括第一位线和第二位线，对于具有与第一位线相邻的第一位线和第二位线的组形成的源极线，并且沿第一方向运行，其中，第一位线和第二位线运行，连接到第一位线的第一磁阻效应元件，连接到第二位线的第二磁阻效应元件，与第一磁阻效应元件串联连接的第一晶体管，晶体管与第二磁阻效应元件串联连接。具有第一磁阻效应元件和第一晶体管的第一单元和具有第二磁阻效应元件和第二晶体管的第二单元连接在源极线上。

18. 发明授权

US08009456B2 Resistance change type memory 有权
标题翻译：电阻变化型存储器
公开(公告)号：US08009456B2
公开(公告)日：2011-08-30
申请号：US12350477
申请日：2009-01-08
申请人： Naoharu Shimomura , Yoshiaki Asao
发明人： Naoharu Shimomura , Yoshiaki Asao
IPC分类号： G11C11/00
CPC分类号： G11C13/0069 , G11C11/1657 , G11C11/1659 , G11C11/1675 , G11C13/0004 , G11C13/0007 , G11C13/0011 , G11C13/0023 , G11C13/0028 , G11C13/003 , G11C2013/0078 , G11C2213/32 , G11C2213/34 , G11C2213/72 , G11C2213/74
摘要： A resistance change type memory includes first, second and third drive lines, a resistance change element having one end connected to the third drive line, a first diode having an anode connected to the first drive line and a cathode connected to other end of the first resistance change element, a second diode having an anode connected to other end of the first resistance change element and a cathode connected to the second drive line, and a driver/sinker which supplies a write current to the resistance change element. A write control circuit is arranged such that when first data is written, the write current is caused to flow in a direction from the first drive line to the third drive line, and when second data is written, the write current is caused to flow in a direction from the third drive line to the second drive line.
摘要翻译：电阻变化型存储器包括第一，第二和第三驱动线，电阻改变元件，其一端连接到第三驱动线，第一二极管，具有连接到第一驱动线的阳极和连接到第一驱动线的另一端的阴极电阻变化元件，具有连接到第一电阻变化元件的另一端的阳极和连接到第二驱动线的阴极的第二二极管，以及向电阻变化元件提供写入电流的驱动器/沉降片。写控制电路被布置成使得当第一数据被写入时，使写入电流在从第一驱动线到第三驱动线的方向上流动，并且当写入第二数据时，使写入电流流入从第三驱动线到第二驱动线的方向。

19. 发明申请

US20110068401A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110068401A1
公开(公告)日：2011-03-24
申请号：US12881415
申请日：2010-09-14
申请人： Takashi Izumida , Nobutoshi Aoki , Masaki Kondo , Yoshiaki Asao , Satoshi Inaba
发明人： Takashi Izumida , Nobutoshi Aoki , Masaki Kondo , Yoshiaki Asao , Satoshi Inaba
IPC分类号： H01L27/12 , H01L21/84
CPC分类号： H01L29/785 , H01L21/823431 , H01L29/66795
摘要： A semiconductor device of an embodiment includes a substrate and a plurality of fins formed on the substrate. The plurality of fins is arranged so that a first distance and a second distance narrower than the first distance are repeated. In addition, the plurality of fins include a semiconductor region in which an impurity concentration of lower portions of side surfaces facing each other in sides forming the first distance is higher than an impurity concentration of lower portions of side surfaces facing each other in sides forming the second distance.
摘要翻译：实施例的半导体器件包括基板和形成在基板上的多个翅片。多个翅片被布置成使得比第一距离窄的第一距离和第二距离被重复。另外，多个散热片包括半导体区域，其中在形成第一距离的侧面中彼此面对的侧面的下部的杂质浓度高于形成第一距离的侧面彼此相对的侧表面的下部的杂质浓度第二距离。

20. 发明授权

US07745894B2 Semiconductor memory device 有权
标题翻译：半导体存储器件
公开(公告)号：US07745894B2
公开(公告)日：2010-06-29
申请号：US11943831
申请日：2007-11-21
申请人： Yoshiaki Asao , Takeshi Kajiyama
发明人： Yoshiaki Asao , Takeshi Kajiyama
IPC分类号： H01L21/98
CPC分类号： G11C11/16 , B82Y10/00 , G11C13/0004 , G11C13/0007 , G11C2213/31 , G11C2213/32 , G11C2213/79 , H01L27/228 , H01L27/24
摘要： A semiconductor memory device includes first to third wiring layers formed above a semiconductor substrate, extending in a first direction, and sequentially arranged in a second direction perpendicular to the first direction, a plurality of active areas formed in the semiconductor substrate, and extending in a direction oblique to the first direction, first and second selection transistors formed in each of the active areas, and sharing a source region electrically connected to the second wiring layer, a first magnetoresistive element having one terminal electrically connected to a drain region of the first selection transistor, and the other terminal electrically connected to the first wiring layer, and a second magnetoresistive element having one terminal electrically connected to a drain region of the second selection transistor, and the other terminal electrically connected to the third wiring layer.
摘要翻译：半导体存储器件包括形成在半导体衬底上的第一至第三布线层，沿第一方向延伸，并且沿垂直于第一方向的第二方向依次布置;形成在半导体衬底中的多个有源区，形成在每个有源区中的第一和第二选择晶体管，并且共用与第二布线层电连接的源极区;第一磁阻元件，具有与第一选择区的漏极区域电连接的一个端子晶体管，另一个端子电连接到第一布线层，以及第二磁阻元件，其具有一个端子电连接到第二选择晶体管的漏极区域，另一个端子电连接到第三布线层。

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