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11. 发明授权

US07813180B2 Non-volatile memory devices and methods of operating the same 失效
标题翻译：非易失性存储器件及其操作方法
公开(公告)号：US07813180B2
公开(公告)日：2010-10-12
申请号：US12005376
申请日：2007-12-27
申请人： Won-joo Kim , Yoon-dong Park , June-mo Koo , Suk-pil Kim , Tae-hee Lee
发明人： Won-joo Kim , Yoon-dong Park , June-mo Koo , Suk-pil Kim , Tae-hee Lee
IPC分类号： G11C7/00
CPC分类号： H01L29/7881 , G11C16/3418 , H01L27/115 , H01L27/11521 , H01L29/42328 , H01L29/42336 , H01L29/66825
摘要： Example embodiment non-volatile memory devices may be capable of increased integration and reliability and may provide example methods of operating non-volatile memory devices. Example embodiment non-volatile memory devices may include a first control gate electrode on a semiconductor substrate. A first charge storing layer may be between the semiconductor substrate and the first control gate electrode. A source region may be defined in the semiconductor substrate at one side of the first control gate electrode. A first auxiliary gate electrode may be at the other side of the first control gate electrode and may be recessed into the semiconductor substrate. A first drain region may be defined in the semiconductor substrate at one side of the first auxiliary gate electrode opposite to the first control gate electrode. A bit line may be connected to the first drain region.
摘要翻译：示例性实施例非易失性存储器设备可能能够提高集成度和可靠性，并且可以提供操作非易失性存储器设备的示例性方法。示例性实施例非易失性存储器件可以包括半导体衬底上的第一控制栅电极。第一电荷存储层可以在半导体衬底和第一控制栅电极之间。源区域可以在第一控制栅电极的一侧的半导体衬底中限定。第一辅助栅电极可以在第一控制栅电极的另一侧，并且可以凹入到半导体衬底中。第一漏极区域可以在第一辅助栅电极的与第一控制栅电极相对的一侧的半导体衬底中限定。位线可以连接到第一漏区。

12. 发明授权

US07700935B2 Non-volatile memory device and method of fabricating the same 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US07700935B2
公开(公告)日：2010-04-20
申请号：US11882694
申请日：2007-08-03
申请人： Won-joo Kim , Suk-pil Kim , Yoon-dong Park , June-mo Koo
发明人： Won-joo Kim , Suk-pil Kim , Yoon-dong Park , June-mo Koo
IPC分类号： H01L47/00
CPC分类号： G11C11/5678 , G11C13/0004 , H01L27/24
摘要： A non-volatile memory device and a method of fabricating the same are provided. In the non-volatile memory device, at least one first semiconductor layer of a first conductivity type may be formed spaced apart from each other on a portion of a substrate. A plurality of first resistance variation storage layers may contact first sidewalls of each of the at least one first semiconductor layer. A plurality of second semiconductor layers of a second conductivity type, opposite to the first conductivity type, may be interposed between the first sidewalls of each of the at least one first semiconductor layer and the plurality of first resistance variation storage layers. A plurality of bit line electrodes may be connected to each of the plurality of first resistance variation storage layers.
摘要翻译：提供了一种非易失性存储器件及其制造方法。在非易失性存储器件中，第一导电类型的至少一个第一半导体层可以在衬底的一部分上彼此间隔开形成。多个第一电阻变化存储层可以接触至少一个第一半导体层中的每一个的第一侧壁。与第一导电类型相反的第二导电类型的多个第二半导体层可以插入在至少一个第一半导体层和多个第一电阻变化存储层中的每一个的第一侧壁之间。多个位线电极可以连接到多个第一电阻变化存储层中的每一个。

13. 发明授权

US07560344B2 Semiconductor device having a pair of fins and method of manufacturing the same 失效
公开(公告)号：US07560344B2
公开(公告)日：2009-07-14
申请号：US11976004
申请日：2007-10-19
申请人： Suk-pil Kim , Yoon-dong Park , Jong-jin Lee , Won-joo Kim , June-mo Koo , Seung-hwan Song
发明人： Suk-pil Kim , Yoon-dong Park , Jong-jin Lee , Won-joo Kim , June-mo Koo , Seung-hwan Song
IPC分类号： H01L21/336
CPC分类号： H01L21/28273 , H01L21/28282 , H01L29/66795 , H01L29/66825 , H01L29/66833 , H01L29/785 , H01L29/7881 , H01L29/792
摘要： Example embodiments relate to a semiconductor device and a method of manufacturing the same. A semiconductor device according to example embodiments may have reduced disturbances during reading operations and a reduced short channel effect. The semiconductor device may include a semiconductor substrate having a body and a pair of fins protruding from the body. Inner spacer insulating layers may be formed on an upper portion of an inner sidewall of the pair of fins so as to reduce the entrance to the region between the pair of fins. A gate electrode may cover a portion of the external sidewalls of the pair of fins and may extend across the inner spacer insulating layers so as to define a void between the pair of fins. Gate insulating layers may be interposed between the gate electrode and the pair of fins.

14. 发明申请

US20080191263A1 Nonvolatile memory devices and methods of fabricating the same 审中-公开
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20080191263A1
公开(公告)日：2008-08-14
申请号：US11980419
申请日：2007-10-31
申请人： Won-joo Kim , June-mo Koo , Suk-pil Kim , Yoon-dong Park
发明人： Won-joo Kim , June-mo Koo , Suk-pil Kim , Yoon-dong Park
IPC分类号： H01L29/788 , H01L21/336
CPC分类号： H01L29/792 , H01L27/11521 , H01L27/11556 , H01L27/11568 , H01L29/40114 , H01L29/40117 , H01L29/42332 , H01L29/42348 , H01L29/7881 , H01L29/7926
摘要： Provided are a nonvolatile memory device and a method of fabricating the same in which a channel length is effectively increased and high-integration may be possible. In the nonvolatile memory device, a semiconductor device may include an active region defined by a device isolation film. The active region may include at least one projecting portion. A pair of control gate electrodes may cover both side surfaces of the at least one projecting portion, and may be spaced apart from each other. A pair of charge storage layers may be between both side surfaces of the at least one projecting portion and the pair of control gate electrodes.
摘要翻译：提供一种非易失性存储器件及其制造方法，其中沟道长度被有效地增加并且高集成度是可能的。在非易失性存储器件中，半导体器件可以包括由器件隔离膜限定的有源区。有源区域可以包括至少一个突出部分。一对控制栅电极可以覆盖至少一个突出部分的两个侧表面，并且可以彼此间隔开。一对电荷存储层可以位于至少一个突出部分的两个侧表面和一对控制栅极电极之间。

15. 发明申请

US20080175061A1 Non-volatile memory devices and methods of operating the same 失效
标题翻译：非易失性存储器件及其操作方法
公开(公告)号：US20080175061A1
公开(公告)日：2008-07-24
申请号：US12005376
申请日：2007-12-27
申请人： Won-joo Kim , Yoon-dong Park , June-mo Koo , Suk-pil Kim , Tae-hee Lee
发明人： Won-joo Kim , Yoon-dong Park , June-mo Koo , Suk-pil Kim , Tae-hee Lee
IPC分类号： G11C16/06 , H01L29/788
CPC分类号： H01L29/7881 , G11C16/3418 , H01L27/115 , H01L27/11521 , H01L29/42328 , H01L29/42336 , H01L29/66825
摘要： Example embodiment non-volatile memory devices may be capable of increased integration and reliability and may provide example methods of operating non-volatile memory devices. Example embodiment non-volatile memory devices may include a first control gate electrode on a semiconductor substrate. A first charge storing layer may be between the semiconductor substrate and the first control gate electrode. A source region may be defined in the semiconductor substrate at one side of the first control gate electrode. A first auxiliary gate electrode may be at the other side of the first control gate electrode and may be recessed into the semiconductor substrate. A first drain region may be defined in the semiconductor substrate at one side of the first auxiliary gate electrode opposite to the first control gate electrode. A bit line may be connected to the first drain region.
摘要翻译：示例性实施例非易失性存储器设备可能能够提高集成度和可靠性，并且可以提供操作非易失性存储器设备的示例性方法。示例性实施例非易失性存储器件可以包括半导体衬底上的第一控制栅电极。第一电荷存储层可以在半导体衬底和第一控制栅电极之间。源区域可以在第一控制栅电极的一侧的半导体衬底中限定。第一辅助栅电极可以在第一控制栅电极的另一侧，并且可以凹入到半导体衬底中。第一漏极区域可以在第一辅助栅电极的与第一控制栅电极相对的一侧的半导体衬底中限定。位线可以连接到第一漏区。

16. 发明授权

US07910909B2 Non-volatile memory device and method of fabricating the same 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US07910909B2
公开(公告)日：2011-03-22
申请号：US12232745
申请日：2008-09-23
申请人： Suk-pil Kim , Yoon-dong Park , June-mo Koo
发明人： Suk-pil Kim , Yoon-dong Park , June-mo Koo
IPC分类号： H01L45/00
CPC分类号： H01L27/249 , H01L27/2409 , H01L45/04 , H01L45/06 , H01L45/1226 , H01L45/144 , H01L45/146
摘要： Provided are a non-volatile memory device that may be configured in a stacked structure and may be more easily highly integrated, and a method of fabricating the non-volatile memory device. At least one first electrode and at least one second electrode are provided. The at least one second electrode may cross the at least one first electrode. At least one data storage layer may be at an intersection between the at least one first electrode and the at least one second electrode. Any one of the at least one first electrode and the at least one second electrode may include at least one junction diode connected to the at least one data storage layer.
摘要翻译：提供了可以被配置为堆叠结构并且可以更容易地高度集成的非易失性存储器件，以及制造非易失性存储器件的方法。提供至少一个第一电极和至少一个第二电极。所述至少一个第二电极可以穿过所述至少一个第一电极。至少一个数据存储层可以在至少一个第一电极和至少一个第二电极之间的交叉点处。所述至少一个第一电极和所述至少一个第二电极中的任何一个可以包括连接到所述至少一个数据存储层的至少一个结二极管。

17. 发明授权

US07833890B2 Semiconductor device having a pair of fins and method of manufacturing the same 失效
标题翻译：具有一对翅片的半导体器件及其制造方法
公开(公告)号：US07833890B2
公开(公告)日：2010-11-16
申请号：US12457366
申请日：2009-06-09
申请人： Won-joo Kim , June-mo Koo , Seung-hwan Song , Suk-pil Kim , Yoon-dong Park , Jong-jin Lee
发明人： Won-joo Kim , June-mo Koo , Seung-hwan Song , Suk-pil Kim , Yoon-dong Park , Jong-jin Lee
IPC分类号： H01L21/4763
CPC分类号： H01L21/28273 , H01L21/28282 , H01L29/66795 , H01L29/66825 , H01L29/66833 , H01L29/785 , H01L29/7881 , H01L29/792
摘要： Example embodiments relate to a semiconductor device and a method of manufacturing the same. A semiconductor device according to example embodiments may have reduced disturbances during reading operations and a reduced short channel effect. The semiconductor device may include a semiconductor substrate having a body and a pair of fins protruding from the body. Inner spacer insulating layers may be formed on an upper portion of an inner sidewall of the pair of fins so as to reduce the entrance to the region between the pair of fins. A gate electrode may cover a portion of the external sidewalls of the pair of fins and may extend across the inner spacer insulating layers so as to define a void between the pair of fins. Gate insulating layers may be interposed between the gate electrode and the pair of fins.
摘要翻译：示例性实施例涉及半导体器件及其制造方法。根据示例实施例的半导体器件可以在读取操作期间具有减小的干扰，并且减少短信道效应。半导体器件可以包括具有主体和从主体突出的一对鳍片的半导体衬底。可以在一对翅片的内侧壁的上部形成内隔离层绝缘层，以减少对一对翅片之间的区域的入口。栅极电极可以覆盖一对鳍片的外部侧壁的一部分，并且可以跨越内部间隔物绝缘层延伸，以便在一对鳍片之间限定空隙。栅绝缘层可以插入在栅电极和一对鳍之间。

18. 发明申请

US20090253255A1 Semiconductor device having a pair of fins and method of manufacturing the same 失效
标题翻译：具有一对翅片的半导体器件及其制造方法
公开(公告)号：US20090253255A1
公开(公告)日：2009-10-08
申请号：US12457366
申请日：2009-06-09
申请人： Won-joo Kim , June-mo Koo , Seung-hwan Song , Suk-pil Kim , Yoon-dong Park , Jong-jin Lee
发明人： Won-joo Kim , June-mo Koo , Seung-hwan Song , Suk-pil Kim , Yoon-dong Park , Jong-jin Lee
IPC分类号： H01L21/28
CPC分类号： H01L21/28273 , H01L21/28282 , H01L29/66795 , H01L29/66825 , H01L29/66833 , H01L29/785 , H01L29/7881 , H01L29/792
摘要： Example embodiments relate to a semiconductor device and a method of manufacturing the same. A semiconductor device according to example embodiments may have reduced disturbances during reading operations and a reduced short channel effect. The semiconductor device may include a semiconductor substrate having a body and a pair of fins protruding from the body. Inner spacer insulating layers may be formed on an upper portion of an inner sidewall of the pair of fins so as to reduce the entrance to the region between the pair of fins. A gate electrode may cover a portion of the external sidewalls of the pair of fins and may extend across the inner spacer insulating layers so as to define a void between the pair of fins. Gate insulating layers may be interposed between the gate electrode and the pair of fins.
摘要翻译：示例性实施例涉及半导体器件及其制造方法。根据示例实施例的半导体器件可以在读取操作期间具有减小的干扰，并且减少短信道效应。半导体器件可以包括具有主体和从主体突出的一对鳍片的半导体衬底。可以在一对翅片的内侧壁的上部形成内隔离层绝缘层，以减少对一对翅片之间的区域的入口。栅极电极可以覆盖一对鳍片的外部侧壁的一部分，并且可以跨越内部间隔物绝缘层延伸，以便在一对鳍片之间限定空隙。栅绝缘层可以插入在栅电极和一对鳍之间。

19. 发明授权

US07585755B2 Method of fabricating non-volatile memory device 有权
标题翻译：制造非易失性存储器件的方法
公开(公告)号：US07585755B2
公开(公告)日：2009-09-08
申请号：US11978567
申请日：2007-10-30
申请人： Seung-hwan Song , Yoon-dong Park , June-mo Koo , Suk-pil Kim , Jae-woong Hyun , Choong-ho Lee , Tae-hun Kim
发明人： Seung-hwan Song , Yoon-dong Park , June-mo Koo , Suk-pil Kim , Jae-woong Hyun , Choong-ho Lee , Tae-hun Kim
IPC分类号： H01L21/8239 , H01L29/788 , H01L29/792 , H01L27/105
CPC分类号： H01L21/84 , H01L27/105 , H01L27/1052 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L27/1203
摘要： A method of fabricating a non-volatile memory device according to example embodiments may include forming a semiconductor layer on a substrate. A plurality of lower charge storing layers may be formed on a bottom surface of the semiconductor layer. A plurality of lower control gate electrodes may be formed on the plurality of lower charge storing layers. A plurality of upper charge storing layers may be formed on a top surface of the semiconductor layer. A plurality of upper control gate electrodes may be formed on the plurality of upper charge storing layers, wherein the plurality of lower and upper control gate electrodes may be arranged alternately.
摘要翻译：根据示例性实施例的制造非易失性存储器件的方法可包括在衬底上形成半导体层。多个下电荷存储层可以形成在半导体层的底表面上。可以在多个下电荷存储层上形成多个下控制栅电极。多个上电荷存储层可以形成在半导体层的顶表面上。多个上部控制栅极电极可以形成在多个上部电荷存储层上，其中多个下部和上部控制栅电极可以交替布置。

20. 发明授权

US07551491B2 Unit cell of a non-volatile memory device, a non-volatile memory device and method thereof 有权
标题翻译：非易失性存储器件的单元，非易失性存储器件及其方法
公开(公告)号：US07551491B2
公开(公告)日：2009-06-23
申请号：US11715404
申请日：2007-03-08
申请人： Won-joo Kim , Suk-pil Kim , Jae-woong Hyun , Yoon-dong Park , June-mo Koo
发明人： Won-joo Kim , Suk-pil Kim , Jae-woong Hyun , Yoon-dong Park , June-mo Koo
IPC分类号： G11C11/34
CPC分类号： G11C16/0433 , G11C16/0491 , G11C16/10 , H01L27/115 , H01L27/11521 , H01L27/11524 , H01L27/11568
摘要： Unit cells of a non-volatile memory device and a method thereof are provided. In an example, the unit cell may include a first memory transistor and a second memory transistor connected to each other in series and further connected in common to a word line, the first and second memory transistors including first and second storage nodes, respectively, the first and second storage nodes configured to execute concurrent memory operations. In another example, the unit cell may include a semiconductor substrate in which first and second bit line regions are defined, first and second storage node layers respectively formed on the semiconductor substrate between the first and second bit line regions, a first pass gate electrode formed on the semiconductor substrate between the first bit line region and the first storage node layer, a second pass gate electrode formed on the semiconductor substrate between the second bit line region and the second storage node layer, a third pass gate electrode formed on the semiconductor substrate between the first and second storage node layers, a third bit line region formed in a portion of the semiconductor substrate under the third pass gate electrode and a control gate electrode extending across the first and second storage node layers. The example unit cells may be implemented within a non-volatile memory device (e.g., a flash memory device), such that the non-volatile memory device may include a plurality of example unit cells.
摘要翻译：提供非易失性存储器件的单元电池及其方法。在一个示例中，单元可以包括串联连接并进一步连接到字线的第一存储晶体管和第二存储晶体管，第一和第二存储晶体管分别包括第一和第二存储节点，配置为执行并发存储器操作的第一和第二存储节点。在另一示例中，单元可以包括其中限定了第一和第二位线区域的半导体衬底，分别形成在第一和第二位线区域之间的半导体衬底上的第一和第二存储节点层，形成的第一遍栅极电极在第一位线区域和第一存储节点层之间的半导体衬底上，形成在第二位线区域和第二存储节点层之间的半导体衬底上的第二遍栅极电极，形成在半导体衬底上的第三栅极电极在所述第一和第二存储节点层之间形成第三位线区域，所述第三位线区域形成在所述第三栅极电极下方的所述半导体衬底的一部分中，以及跨越所述第一和第二存储节点层延伸的控制栅电极。示例性单元单元可以在非易失性存储器件（例如，闪存器件）内实现，使得非易失性存储器件可以包括多个示例单位单元。

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