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11. 发明申请

US20130203260A1 ETCHING METHOD AND ETCHING APPARATUS 审中-公开
标题翻译：蚀刻方法和蚀刻装置
公开(公告)号：US20130203260A1
公开(公告)日：2013-08-08
申请号：US13819382
申请日：2011-07-29
申请人： Kenichi Hara , Takashi Hayakawa
发明人： Kenichi Hara , Takashi Hayakawa
IPC分类号： H01L21/768 , H01L21/67
CPC分类号： H01L21/76886 , C23F4/00 , H01J37/3053 , H01J2237/0817 , H01J2237/334 , H01L21/32136 , H01L21/67069 , H01L23/53228 , H01L2924/0002 , H01L2924/00
摘要： This etching method comprises a step for forming an organic compound gas (22) atmosphere around a copper film (101) that has a mask material (102) formed on the surface thereof and a step for using the mask material (102) as a mask on the copper film (101), irradiating with oxygen ions (6), and performing anisotropic etching of the copper film (101) in the organic compound gas (22) atmosphere.
摘要翻译：该蚀刻方法包括在其表面形成有掩模材料（102）的铜膜（101）周围形成有机化合物气体（22）气氛的步骤和使用掩模材料（102）作为掩模的步骤在铜膜（101）上照射氧离子（6），并对有机化合物气体（22）气氛中的铜膜（101）进行各向异性蚀刻。

12. 发明申请

US20080226826A1 Substrate Processing Method and Substrate Processing Apparatus 审中-公开
标题翻译：基板加工方法及基板加工装置
公开(公告)号：US20080226826A1
公开(公告)日：2008-09-18
申请号：US12091197
申请日：2007-06-22
申请人： Takashi Tanaka , Kenichi Hara , Mitsuaki Iwashita
发明人： Takashi Tanaka , Kenichi Hara , Mitsuaki Iwashita
IPC分类号： B05D3/10 , B05C11/08
CPC分类号： H01L21/76849 , C23C18/1689 , C23C18/1834 , C23C18/50 , H01L21/288 , H01L21/67051 , H01L21/6723 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A substrate processing method includes applying electroless plating of CoWB onto a Cu interconnection line formed on a wafer W, and then performing a post-cleaning process by use of a cleaning liquid on the target substrate or wafer before a by-product is precipitated on the surface of the CoWB film formed by the electroless plating to cover the Cu interconnection line.
摘要翻译：基板处理方法包括将CoWB的无电镀施加到形成在晶片W上的Cu互连线上，然后在副产物沉淀在靶基板或晶片上之后，通过使用目标基板或晶片上的清洗液进行后清洗处理通过无电镀形成的CoWB膜的表面覆盖Cu互连线。

13. 发明授权

US4320378A Oxygen sensor 失效
标题翻译：氧传感器
公开(公告)号：US4320378A
公开(公告)日：1982-03-16
申请号：US194248
申请日：1980-03-18
申请人： Harutaka Taniguchi , Kenichi Hara , Hideo Shiraishi , Shinji Kiyofuji
发明人： Harutaka Taniguchi , Kenichi Hara , Hideo Shiraishi , Shinji Kiyofuji
IPC分类号： G01N27/12 , G01N27/403 , G01N27/407 , H01L7/00
CPC分类号： G01N27/4071 , G01N27/4077
摘要： Into a metal tube (24) provided with vent-holes (32) is inserted an oxygen sensor element (10) which comprises a ceramic round rod coated with a porous thick membrane of transition-metal oxide, divided electrode thick membranes (14) and a protective layer therefor, thereby to obtain an oxygen sensor. One electrode of the oxygen sensor element is connected to the metal tube and the opposite electrode is connected to a connecting lead wire (64, 66) electrically insulated from the tube, so that the oxygen sensor is rich in toughness against the mechanical oscillation and impact. The sensor may suitably be used to detect the oxygen content in the waste gas of automobiles.
摘要翻译：在设置有通气孔（32）的金属管（24）中插入氧传感器元件（10），该氧传感器元件（10）包括涂覆有过渡金属氧化物的多孔厚膜的陶瓷圆棒，分隔电极厚膜（14）和其保护层，从而获得氧传感器。氧传感器元件的一个电极连接到金属管，并且相对电极连接到与管电绝缘的连接引线（64,66），使得氧传感器具有相对于机械振荡和冲击的韧性。传感器可适当地用于检测汽车废气中的氧气含量。

14. 发明授权

US08062955B2 Substrate processing method and substrate processing apparatus 有权
标题翻译：基板处理方法和基板处理装置
公开(公告)号：US08062955B2
公开(公告)日：2011-11-22
申请号：US12091131
申请日：2007-06-22
申请人： Takashi Tanaka , Kenichi Hara , Mitsuaki Iwashita
发明人： Takashi Tanaka , Kenichi Hara , Mitsuaki Iwashita
IPC分类号： H01L21/76
CPC分类号： H01L21/76849 , C23C18/1689 , C23C18/1834 , C23C18/50 , H01L21/288 , H01L21/67051 , H01L21/6723 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A CoWB film is formed as a cap metal on a Cu interconnection line formed on a substrate or wafer W, by repeating a plating step and a post-cleaning step a plurality of times. The plating step is arranged to apply electroless plating containing CoWB onto the Cu interconnection line. The post-cleaning step is arranged to clean the wafer W by use of a cleaning liquid, after the plating step.
摘要翻译：通过重复电镀步骤和后清洗步骤多次，在形成在基板或晶片W上的Cu互连线上形成CoWB膜作为帽金属。电镀步骤被布置成将含有CoWB的无电镀施加到Cu互连线上。后清洗步骤被布置成在电镀步骤之后通过使用清洁液体清洁晶片W.

15. 发明授权

US08003509B2 Semiconductor manufacturing apparatus and semiconductor manufacturing method 有权
标题翻译：半导体制造装置及半导体制造方法
公开(公告)号：US08003509B2
公开(公告)日：2011-08-23
申请号：US12405644
申请日：2009-03-17
申请人： Kenichi Hara , Mitsuaki Iwashita , Takashi Tanaka , Takayuki Toshima , Takehiko Orii
发明人： Kenichi Hara , Mitsuaki Iwashita , Takashi Tanaka , Takayuki Toshima , Takehiko Orii
IPC分类号： H01L21/44
CPC分类号： H01L21/288 , C23C18/1628 , H01L21/76849
摘要： A plated film having a uniform film thickness is formed on a surface of a substrate. A semiconductor manufacturing apparatus includes: a holding mechanism for holding a substrate rotatably; a nozzle for supplying a processing solution for performing a plating process on a processing target surface of the substrate; a substrate rotating mechanism for rotating the substrate held by the holding mechanism in a direction along the processing target surface; a nozzle driving mechanism for moving the nozzle in a direction along the processing target surface at a position facing the processing target surface of the substrate held by the holding mechanism; and a control unit for controlling the supply of the processing solution by the nozzle and the movement of the nozzle by the nozzle driving mechanism.
摘要翻译：在基板的表面上形成具有均匀膜厚的镀膜。半导体制造装置包括：可旋转地保持基板的保持机构; 用于向所述基板的处理目标表面供给用于进行电镀处理的处理液的喷嘴; 基板旋转机构，用于沿着所述处理对象表面的方向旋转由所述保持机构保持的所述基板; 喷嘴驱动机构，用于沿着与所述保持机构保持的所述基板的处理对象面对置的位置沿着所述处理对象面的方向移动所述喷嘴; 以及控制单元，用于控制由喷嘴供应处理溶液和通过喷嘴驱动机构移动喷嘴。

16. 发明申请

US20080280437A1 Substrate Processing Method and Substrate Processing Apparatus 有权
标题翻译：基板加工方法及基板加工装置
公开(公告)号：US20080280437A1
公开(公告)日：2008-11-13
申请号：US12091131
申请日：2007-06-22
申请人： Takashi Tanaka , Kenichi Hara , Mitsuaki Iwashita
发明人： Takashi Tanaka , Kenichi Hara , Mitsuaki Iwashita
IPC分类号： H01L21/44 , B05B13/02 , B05C11/10
CPC分类号： H01L21/76849 , C23C18/1689 , C23C18/1834 , C23C18/50 , H01L21/288 , H01L21/67051 , H01L21/6723 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A CoWB film is formed as a cap metal on a Cu interconnection line formed on a substrate or wafer W, by repeating a plating step and a post-cleaning step a plurality of times. The plating step is arranged to apply electroless plating containing CoWB onto the Cu interconnection line. The post-cleaning step is arranged to clean the wafer W by use of a cleaning liquid, after the plating step.
摘要翻译：通过重复电镀步骤和后清洗步骤多次，在形成在基板或晶片W上的Cu互连线上形成CoWB膜作为帽金属。电镀步骤被布置成将含有CoWB的无电镀施加到Cu互连线上。后清洗步骤被布置成在电镀步骤之后通过使用清洁液体清洁晶片W.

17. 发明授权

US4887662A Cooling drum for continuous-casting machines for manufacturing thin metallic strip 失效
标题翻译：用于制造薄金属条的连续铸造机的冷却鼓
公开(公告)号：US4887662A
公开(公告)日：1989-12-19
申请号：US247691
申请日：1988-09-22
申请人： Shigenori Tanaka , Yasuo Itoh , Michiya Hayashida , Kenichi Hara , Keiichi Yamamoto , Hikotaro Itani , Atsumu Yamane , Akio Kasama , Isao Suichi , Hiroyuki Kajioka , Kunimasa Sasaki
发明人： Shigenori Tanaka , Yasuo Itoh , Michiya Hayashida , Kenichi Hara , Keiichi Yamamoto , Hikotaro Itani , Atsumu Yamane , Akio Kasama , Isao Suichi , Hiroyuki Kajioka , Kunimasa Sasaki
IPC分类号： B21B27/00 , B22D11/06
CPC分类号： B21B27/005 , B22D11/0651
摘要： A cooling drum for continuous-casting machines, for manufacturing thin metallic strips, and having a surface composing part of a casting mold wall in contact with molten metal, wherein the surface has numerous dimples disposed uniformly thereon and not in contact with each other, and each of the dimples has an opening portion in the form of a circle or an oval with a diameter of from 0.1 to 1.2 mm and a depth of from 5 to 100 .mu.m.

18. 发明授权

US08770138B2 Semiconductor manufacturing apparatus and semiconductor manufacturing method 有权
标题翻译：半导体制造装置及半导体制造方法
公开(公告)号：US08770138B2
公开(公告)日：2014-07-08
申请号：US13180702
申请日：2011-07-12
申请人： Kenichi Hara , Mitsuaki Iwashita , Takashi Tanaka , Takayuki Toshima , Takehiko Orii
发明人： Kenichi Hara , Mitsuaki Iwashita , Takashi Tanaka , Takayuki Toshima , Takehiko Orii
IPC分类号： B05C11/10 , B05B13/02 , B05B3/00
CPC分类号： H01L21/288 , C23C18/1628 , H01L21/76849
摘要： A plated film having a uniform film thickness is formed on a surface of a substrate. A semiconductor manufacturing apparatus includes: a holding mechanism for holding a substrate rotatably; a nozzle for supplying a processing solution for performing a plating process on a processing target surface of the substrate; a substrate rotating mechanism for rotating the substrate held by the holding mechanism in a direction along the processing target surface; a nozzle driving mechanism for moving the nozzle in a direction along the processing target surface at a position facing the processing target surface of the substrate held by the holding mechanism; and a control unit for controlling the supply of the processing solution by the nozzle and the movement of the nozzle by the nozzle driving mechanism.
摘要翻译：在基板的表面上形成具有均匀膜厚的镀膜。半导体制造装置包括：可旋转地保持基板的保持机构; 用于向所述基板的处理目标表面供给用于进行电镀处理的处理液的喷嘴; 基板旋转机构，用于沿着所述处理对象表面的方向旋转由所述保持机构保持的所述基板; 喷嘴驱动机构，用于沿着与所述保持机构保持的所述基板的处理对象面对置的位置沿着所述处理对象面的方向移动所述喷嘴; 以及控制单元，用于控制由喷嘴供应处理溶液和通过喷嘴驱动机构移动喷嘴。

19. 发明申请

US20070148972A1 Method of repairing seed layer for damascene interconnects 审中-公开
标题翻译：修复大马士革互连种子层的方法
公开(公告)号：US20070148972A1
公开(公告)日：2007-06-28
申请号：US11643959
申请日：2006-12-22
申请人： Kenichi Hara , Mitsuaki Iwashita , Hidetami Yaegashi
发明人： Kenichi Hara , Mitsuaki Iwashita , Hidetami Yaegashi
IPC分类号： H01L21/44
CPC分类号： H01L21/76868 , H01L21/288 , H01L21/76873
摘要： Disclosed is a method of repairing, before embedding a recess with copper, defects of a seed layer formed by sputtering, when forming damascene interconnects. After a copper (silver is also available) nanoparticle-containing sol, e.g., a copper ink is applied onto a substrate, an etch back process for removing the excessive copper ink is performed by supplying an organic solvent onto the substrate. Thereafter, a disperse medium in the copper ink is evaporated by a baking process; and then a dispersant in the copper ink is removed and the nanoparticles are combined with each other to provide a continuous copper film by an annealing process. The etch back process prevents development of defects in a repaired seed layer.
摘要翻译：公开了一种在形成镶嵌互连件之前，在嵌入具有铜的凹槽之前，通过溅射形成的晶种层的缺陷来修复的方法。在铜（也可以使用银）之后，将含有纳米颗粒的溶胶，例如铜油墨施加到基底上，通过向基底上提供有机溶剂来进行用于去除过量铜油墨的回蚀工艺。此后，通过烘烤工艺蒸发铜油墨中的分散介质; 然后除去铜油墨中的分散剂，并将纳米颗粒彼此组合以通过退火工艺提供连续的铜膜。回蚀过程防止修复的种子层中的缺陷的发展。

20. 发明申请

US20060081461A1 Electroless plating apparatus and method 审中-公开
标题翻译：化学镀设备及方法
公开(公告)号：US20060081461A1
公开(公告)日：2006-04-20
申请号：US11248223
申请日：2005-10-13
申请人： Miho Jomen , Kenichi Hara
发明人： Miho Jomen , Kenichi Hara
IPC分类号： C25B9/00
CPC分类号： C23C18/1619
摘要： An electroless plating solution includes a first liquid chemical containing a metal salt and a second liquid chemical containing a reducing agent. In respective liquid chemical supply lines, liquid chemical opening/closing units are installed in the vicinity of a junction therebetween, and at the same time, a plating solution opening/closing unit is provided in the vicinity of an discharge opening in supply line of an electroless plating solution after the first and the second liquid chemical are joined together. A plating solution in the supply line disposed between these opening/closing units corresponds to a discharge amount needed for a plating processing of about one time. Further, both of the liquid chemicals are mixed together only during the time period between the time when a plating processing on one substrate has been started and the time when a plaiting processing is to start on a following substrate.
摘要翻译：化学镀溶液包括含有金属盐的第一液体化学品和含有还原剂的第二液体化学品。在各个液体化学品供应管线中，液体化学品打开/关闭单元安装在它们之间的接合处附近，同时在电子设备的供给管线的排出口附近设置电镀液开闭单元第一和第二液体化学品之后的化学镀溶液接合在一起。设置在这些打开/关闭单元之间的供给管线中的电镀液对应于大约一次的电镀处理所需的排出量。此外，只有在一个基板上的电镀处理已经开始的时间和在随后的基板上开始处理的时间之间的时间段内，才将这两种液体化学品混合在一起。

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