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11. 发明申请

US20120276742A1 Chemical Mechanical Polishing Composition and Method For Polishing Germanium-Antimony-Tellurium Alloys 有权
标题翻译：化学机械抛光组合物和抛光锗 - 锑 - 碲合金的方法
公开(公告)号：US20120276742A1
公开(公告)日：2012-11-01
申请号：US13096740
申请日：2011-04-28
申请人： Jaeseok Lee , Yi Guo , Kancharla-Arun Kumar Reddy , Guangyun Zhang
发明人： Jaeseok Lee , Yi Guo , Kancharla-Arun Kumar Reddy , Guangyun Zhang
IPC分类号： H01L21/306
CPC分类号： C09K3/1463 , C09G1/02 , H01L45/06 , H01L45/144 , H01L45/1683
摘要： A method for chemical mechanical polishing of a substrate comprising a germanium-antimony-tellurium chalcogenide phase change alloy (GST) using a chemical mechanical polishing composition consisting essentially of, as initial components: water; an abrasive; a material selected from ethylene diamine tetra acetic acid and salts thereof; and an oxidizing agent; wherein the chemical mechanical polishing composition facilitates a high GST removal rate with low defectivity.
摘要翻译：一种使用化学机械抛光组合物进行化学机械抛光的方法，其包括锗 - 锑 - 碲硫族化物相变合金（GST），所述化学机械抛光组合物基本上由以下组分组成：初始组分：水; 研磨剂选自乙二胺四乙酸及其盐的材料; 和氧化剂; 其中化学机械抛光组合物有利于具有低缺陷性的高GST去除速率。

12. 发明申请

US20110244685A1 Method of chemical mechanical polishing a substrate with polishing composition adapted to enhance silicon oxide removal 有权
标题翻译：用适于增强氧化硅去除的抛光组合物对衬底进行化学机械抛光的方法
公开(公告)号：US20110244685A1
公开(公告)日：2011-10-06
申请号：US12750799
申请日：2010-03-31
申请人： Yi Guo , Zhendong Liu , Kancharla-Arun Kumar Reddy , Guangyun Zhang
发明人： Yi Guo , Zhendong Liu , Kancharla-Arun Kumar Reddy , Guangyun Zhang
IPC分类号： H01L21/306
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1463
摘要： A method for chemical mechanical polishing of a substrate is provided, comprising: providing a substrate, wherein the substrate comprises silicon oxide; providing a chemical mechanical polishing composition, comprising, as initial components: water; an abrasive; and a substance according to formula I wherein R1, R2 and R3 are each independently selected from a C1-4 alky group; providing a chemical mechanical polishing pad with a polishing surface; moving the polishing surface relative to the substrate; dispensing the chemical mechanical polishing composition onto the polishing surface; and, abrading at least a portion of the substrate to polish the substrate; wherein the substance according to formula I included in the chemical mechanical polishing composition provides an enhanced silicon oxide removal rate and an improved polishing defectivity performance; and, wherein at least some of the silicon oxide is removed from the substrate.
摘要翻译：提供了一种用于基板的化学机械抛光的方法，包括：提供基板，其中所述基板包括氧化硅; 提供化学机械抛光组合物，其包含作为初始组分的水; 研磨剂和根据式I的物质，其中R 1，R 2和R 3各自独立地选自C 1-4烷基; 提供具有抛光表面的化学机械抛光垫; 相对于衬底移动抛光表面; 将化学机械抛光组合物分配到抛光表面上; 并且研磨所述衬底的至少一部分以抛光所述衬底; 其中包括在化学机械抛光组合物中的根据式I的物质提供增强的氧化硅去除速率和改善的抛光缺陷性能; 并且其中所述氧化硅中的至少一些从所述衬底去除。

13. 发明申请

US20110230048A1 Method of polishing a substrate comprising polysilicon, silicon oxide and silicon nitride 有权
标题翻译：抛光包括多晶硅，氧化硅和氮化硅的衬底的方法
公开(公告)号：US20110230048A1
公开(公告)日：2011-09-22
申请号：US12724685
申请日：2010-03-16
申请人： Yi Guo , Zhendong Liu , Kancharla-Arun Kumar Reddy , Guangyun Zhang
发明人： Yi Guo , Zhendong Liu , Kancharla-Arun Kumar Reddy , Guangyun Zhang
IPC分类号： H01L21/306
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1463
摘要： A method for chemical mechanical polishing of a substrate is provided, comprising: providing a substrate, wherein the substrate comprises polysilicon, silicon oxide and silicon nitride; providing a chemical mechanical polishing composition, comprising, as initial components: water; an abrasive; an alkyl aryl polyether sulfonate compound, wherein the alkyl aryl polyether sulfonate compound has a hydrophobic portion having an alkyl group bound to an aryl ring and a nonionic acyclic hydrophilic portion having 4 to 100 carbon atoms; and a substance according to formula I wherein each of R1, R2, R3, R4, R5, R6 and R7 is a bridging group having a formula —(CH2)n—, wherein n is an integer selected from 1 to 10; providing a chemical mechanical polishing pad with a polishing surface; moving the polishing surface relative to the substrate; dispensing the chemical mechanical polishing composition onto the polishing surface; and, abrading at least a portion of the substrate to polish the substrate; wherein at least some of the polysilicon is removed from the substrate; and, wherein at least some of the silicon oxide and silicon nitride is removed from the substrate.
摘要翻译：提供了一种用于基板的化学机械抛光的方法，包括：提供基板，其中所述基板包括多晶硅，氧化硅和氮化硅; 提供化学机械抛光组合物，其包含作为初始组分的水; 研磨剂烷基芳基聚醚磺酸盐化合物，其中烷基芳基聚醚磺酸盐化合物具有与芳环结合的烷基的疏水部分和具有4至100个碳原子的非离子非环状亲水部分; 和根据式I的物质，其中R1，R2，R3，R4，R5，R6和R7中的每一个是具有式 - （CH 2）n - 的桥连基团，其中n是选自1至10的整数; 提供具有抛光表面的化学机械抛光垫; 相对于衬底移动抛光表面; 将化学机械抛光组合物分配到抛光表面上; 并且研磨所述衬底的至少一部分以抛光所述衬底; 其中所述多晶硅中的至少一些从所述衬底移除; 并且其中从所述衬底去除所述氧化硅和氮化硅中的至少一些。

14. 发明申请

US20110111595A1 Chemical mechanical polishing composition and methods relating thereto 有权
公开(公告)号：US20110111595A1
公开(公告)日：2011-05-12
申请号：US12617140
申请日：2009-11-12
申请人： Zhendong Liu , Yi Guo , Kancharla-Arun Kumar Reddy , Guangyun Zhang
发明人： Zhendong Liu , Yi Guo , Kancharla-Arun Kumar Reddy , Guangyun Zhang
IPC分类号： H01L21/306 , C09K13/00
CPC分类号： C09G1/02 , H01L21/31053
摘要： A chemical mechanical polishing composition useful for chemical mechanical polishing of a substrate, wherein the substrate comprises a silicon oxide material and a silicon nitride material; and methods of making and using the chemical mechanical polishing composition. The chemical mechanical polishing composition comprises, as initial components: at least one of a first substance and a second substance; wherein the first substance is according to formula I wherein the second substance is according to formula II an abrasive; and water.

15. 发明申请

US20210329618A1 APPARATUS FOR UE MEASUREMENT DELAY AND GRANULARITY FOR NEW RADIO POSITIONING MEASUREMENT 有权
公开(公告)号：US20210329618A1
公开(公告)日：2021-10-21
申请号：US17320942
申请日：2021-05-14
申请人： Andrey Chervyakov , Rui Huang , Hua Li , Yi Guo , Qiming Li
发明人： Andrey Chervyakov , Rui Huang , Hua Li , Yi Guo , Qiming Li
IPC分类号： H04W72/04 , H04W72/12 , H04W56/00 , H04L5/00
摘要： An apparatus of a New Radio (NR) Node B (gNB), a method, and a storage medium. One or more processors of the apparatus are to: encode for transmission to a user equipment (UE) a message to configure the UE with a measurement gap pattern for positioning reference signal (PRS) measurements; and set a gap pattern length of a measurement gap corresponding to the measurement gap pattern depending on whether an overlap exists between a PRS to be measured and one or more other NR data scheduled to be received by the UE.

16. 发明申请

US20210176682A1 MULTIPLE TRIGGER EVENTS BASED CONDITIONAL HANDOVER IN 5G NR NETWORKS 有权
公开(公告)号：US20210176682A1
公开(公告)日：2021-06-10
申请号：US17101543
申请日：2020-11-23
申请人： Yi Guo , Candy Yiu , Youn Hyoung Heo , Bharat Shrestha
发明人： Yi Guo , Candy Yiu , Youn Hyoung Heo , Bharat Shrestha
IPC分类号： H04W36/00 , H04W76/27
摘要： A UE may decode a radio-resource control (RRC) reconfiguration message comprising a conditional handover (CHO) configuration (CHO-Config) which may identify a CHO configuration for at least one target candidate cell. The CHO configuration may include two or more CHO triggering events for an entry condition. The UE may monitor measurement quantities of the target candidate cell for the entry condition to determine if any of the CHO triggering events are met, start a first count-down timer when the entry condition of a first of the CHO triggering events is met and start a second count-down timer when the entry condition of a second of the CHO triggering events is met. The UE may apply the CHO configuration to the target candidate cell when both of the two CHO triggering events remain fulfilled upon expiration of the both timers.

17. 发明申请

US20190215887A1 NR RRC CONNECTION SETUP OPTIMISATION 审中-公开
公开(公告)号：US20190215887A1
公开(公告)日：2019-07-11
申请号：US16242715
申请日：2019-01-08
申请人： Richard C. Burbidge , Seau S. Lim , Sudeep K. Palat , Yi Guo
发明人： Richard C. Burbidge , Seau S. Lim , Sudeep K. Palat , Yi Guo
IPC分类号： H04W76/19 , H04W76/27 , H04W76/11 , H04W48/14
CPC分类号： H04W76/19 , H04W24/02 , H04W48/14 , H04W76/11 , H04W76/27
摘要： Systems and methods of optimizing NR RRC connection establishment are described. The UE transmits a RRC request for establishment of a connection to a gNB. The RRC request is transmitting on a SRB1 rather than SRB0. The SRB1 has a default SRB1 configuration stored in memory. A response from the gNB is received and acknowledged using the SRB1 or a SRB1 having a SRB1 configuration provided in the response. The RRC request is a RRCReestablishmentRequest or RRCResumeRequest.

18. 发明授权

US09393542B2 Multi-stage plasma reactor system with hollow cathodes for cracking carbonaceous material 有权
标题翻译：具有中空阴极的多级等离子体反应器系统用于裂化碳质材料
公开(公告)号：US09393542B2
公开(公告)日：2016-07-19
申请号：US14361616
申请日：2012-08-03
申请人： Xuan Li , Binhang Yan , Changning Wu , Yi Cheng , Yi Guo
发明人： Xuan Li , Binhang Yan , Changning Wu , Yi Cheng , Yi Guo
IPC分类号： B01J19/08 , C10J3/00 , C10J3/48 , C10J3/72 , C10J3/78 , C10J3/84 , B01J19/24
CPC分类号： B01J19/088 , B01J19/2415 , B01J2219/0809 , B01J2219/0869 , B01J2219/0871 , B01J2219/0894 , C10J3/00 , C10J3/485 , C10J3/721 , C10J3/78 , C10J3/84 , C10J2200/12 , C10J2300/093 , C10J2300/0946 , C10J2300/0959 , C10J2300/0976 , C10J2300/1238 , C10J2300/1807
摘要： Disclosed is a multi-stage plasma reactor system with hollow cathodes for cracking carbonaceous material with each stage comprising: hollow cathodes and hollow anodes cooled by recycling cooling medium or refrigerant; working gas inlet(s); inlet(s) of carbonaceous material and carrier gas as feedstock; reaction tubes in connection with the anode or cathode, in addition, the reactor system also comprises: at least one inlet(s) of quench medium located lower portion of last one of the reaction tubes; and at least one outlet(s) of quenched products and gases located on bottom or lower portion of last one of the reaction tubes, wherein chambers are formed between the first hollow cathode or the hollow cathode used as the reaction tube of any stage and the anode so as to generate plasma gas and/or electric arc therein, generated plasma gas jet fully contacts and efficiently mixes with the carbonaceous material and carrier gas as feedstock and/or volatiles caused by pyrolysis within or nearby highest temperature region of the chambers, and pyrolysis of the carbonaceous material and/or gas-phase reaction of volatiles are occurred. The present reactor system has excellent energy efficiency and higher cracked products yield.
摘要翻译：公开了一种具有用于裂化含碳材料的空心阴极的多级等离子体反应器系统，每级包括：通过循环冷却介质或制冷剂冷却的中空阴极和中空阳极; 工作气体入口; 碳质材料和载气作为原料的入口; 与阳极或阴极连接的反应管，此外，反应器系统还包括：位于反应管的最后一个的下部的至少一个骤冷介质入口; 以及位于最后一个反应管的底部或下部的至少一个淬火产物和气体出口，其中在用作任何阶段的反应管的第一空心阴极或中空阴极之间形成腔室，阳极，以便在其中产生等离子体气体和/或电弧，所产生的等离子体气体射流完全接触并有效地与碳质材料和载体混合，作为由室内或附近的最高温度区域内或其附近的热解引起的原料和/或挥发物，以及发生碳质材料的热解和/或挥发物的气相反应。本反应器系统具有优异的能量效率和较高的裂化产物产率。

19. 发明申请

US20130045598A1 Method for chemical mechanical polishing tungsten 有权
标题翻译：钨化学机械抛光方法
公开(公告)号：US20130045598A1
公开(公告)日：2013-02-21
申请号：US13209749
申请日：2011-08-15
申请人： Yi Guo , Jerry Lee , Raymond L. Lavoie, JR. , Guangyun Zhang
发明人： Yi Guo , Jerry Lee , Raymond L. Lavoie, JR. , Guangyun Zhang
IPC分类号： H01L21/304
CPC分类号： C09G1/02 , C09K3/1463 , H01L21/31053 , H01L21/3212 , H01L21/7684
摘要： A method for chemical mechanical polishing of a substrate comprising tungsten using a nonselective chemical mechanical polishing composition.
摘要翻译：使用非选择性化学机械抛光组合物对包含钨的基材进行化学机械抛光的方法。

20. 发明申请

US20120258598A1 Stabilized Chemical Mechanical Polishing Composition and Method of Polishing a Substrate 有权
标题翻译：稳定的化学机械抛光组合物和抛光底物的方法
公开(公告)号：US20120258598A1
公开(公告)日：2012-10-11
申请号：US13494412
申请日：2012-06-12
申请人： Yi Guo , Zhendong Liu , Kancharla-Arun Kumar Reddy , Guangyun Zhang
发明人： Yi Guo , Zhendong Liu , Kancharla-Arun Kumar Reddy , Guangyun Zhang
IPC分类号： C09K13/00 , H01L21/302 , B82Y30/00
CPC分类号： H01L21/31053 , C09G1/02 , C09K3/1463
摘要： A chemical mechanical polishing composition, comprising, as initial components: water; 0.1 to 20 wt % abrasive having an average particle size of 5 to 50 nm; and, 0.001 to 1 wt % of an adamantyl substance according to formula (II): wherein A is selected from N and P; wherein each R8 is independently selected from hydrogen, a saturated or unsaturated C1-15 alkyl group, C6-15 aryl group, C6-15 aralkyl group, C6-15 alkaryl group; and, wherein the anion in formula (II) can be any anion that balances the positive charge on the cation in formula (II).
摘要翻译：化学机械抛光组合物，其包含作为初始组分的水; 0.1〜20重量％的平均粒径为5〜50nm的研磨剂; 和0.001至1重量％的根据式（II）的金刚烷基物质：其中A选自N和P; 其中每个R 8独立地选自氢，饱和或不饱和的C 1-15烷基，C 6-15芳基，C 6-15芳烷基，C 6-15烷芳基; 并且其中式（II）中的阴离子可以是平衡式（II）中阳离子上的正电荷的任何阴离子。

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