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11. 发明申请

US20070193512A1 Plasma generating method, plasma generating apparatus, and plasma processing apparatus 审中-公开
标题翻译：等离子体产生方法，等离子体产生装置和等离子体处理装置
公开(公告)号：US20070193512A1
公开(公告)日：2007-08-23
申请号：US11707862
申请日：2007-02-20
申请人： Hiroshige Deguchi , Hitoshi Yoneda , Kenji Kato , Akinori Ebe , Yuichi Setsuhara
发明人： Hiroshige Deguchi , Hitoshi Yoneda , Kenji Kato , Akinori Ebe , Yuichi Setsuhara
IPC分类号： C23C16/00
CPC分类号： C23C16/509 , H01J37/32192 , H01J37/3222
摘要： One or more high-frequency antennas is allocated to and disposed in one cubic space C having a side of 0.4 [m] in a plasma generating chamber 1 or in each of plural cubic spaces C, each having a side of 0.4 [m], adjacent ones of the plural cubic spaces being continuous to each other without forming a gap therebetween. The total length L [m] of the high-frequency antennas in each of the cubic spaces C is set in a range which satisfies relationships of (0.2/P)
摘要翻译：在等离子体发生室1中或在具有0.4 [m]侧的多个立方体空间C中的每一个中分配一个或多个高频天线并将其布置在具有0.4 [m]侧的一个立方体C中，多个立体空间中的相邻的空间彼此连续，而不形成间隙。每个立方体空间C中的高频天线的总长度L [m]被设定为满足关于电感耦合等离子体产生（0.2 / P）

12. 发明申请

US20070144672A1 Plasma producing method and apparatus as well as plasma processing apparatus 审中-公开
标题翻译：等离子体制造方法和装置以及等离子体处理装置
公开(公告)号：US20070144672A1
公开(公告)日：2007-06-28
申请号：US11586508
申请日：2006-10-26
申请人： Kenji Kato , Hiroshige Deguchi , Hitoshi Yoneda , Kiyoshi Kubota , Akinori Ebe , Yuichi Setsuhara
发明人： Kenji Kato , Hiroshige Deguchi , Hitoshi Yoneda , Kiyoshi Kubota , Akinori Ebe , Yuichi Setsuhara
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： C23C16/509 , H01J37/321 , H01J37/32183
摘要： Plasma producing method and apparatus as well as plasma processing apparatus including the plasma producing apparatus wherein one or more high-frequency antennas are arranged in a plasma producing chamber, and a high-frequency power is applied to a gas in the chamber from the antenna(s) to produce inductively coupled plasma. Impedance of the high-frequency antenna is set in a range of 45 Ω or lower.
摘要翻译：等离子体制造方法和装置以及包括等离子体制造装置的等离子体处理装置，其中一个或多个高频天线布置在等离子体产生室中，并且高频电力从天线施加到腔室中的气体 s）以产生电感耦合等离子体。高频天线的阻抗设定在45Ω以下的范围内。

13. 发明申请

US20060049138A1 Plasma generation device, plasma control method, and substrate manufacturing method 有权
标题翻译：等离子体发生装置，等离子体控制方法和基板制造方法
公开(公告)号：US20060049138A1
公开(公告)日：2006-03-09
申请号：US10539254
申请日：2003-12-12
申请人： Shoji Miyake , Akinori Ebe , Tatsuo Shoji , Yuichi Setsuhara
发明人： Shoji Miyake , Akinori Ebe , Tatsuo Shoji , Yuichi Setsuhara
IPC分类号： C23F1/00 , C23C16/00 , C03C25/68
CPC分类号： H01J37/321 , H05H1/46 , H05H2001/4667
摘要： The present invention aims to provide a plasma generator capable of creating a spatially uniform distribution of high-density plasma. This object is achieved by the following construction. Multiple antennas 16 are located on the sidewall of a vacuum chamber 11, and a RF power source is connected to three or four antennas 16 in parallel via a plate-shaped conductor 19. The length of the conductor of each antenna 16 is shorter than the quarter wavelength of the induction electromagnetic wave generated within the vacuum chamber. Setting the length of the conductor of the antenna in such a manner prevents the occurrence of a standing wave and thereby maintains the uniformity of the plasma within the vacuum chamber. In addition, the plate-shaped conductor 19 improves the heat-releasing efficiency, which also contributes to the suppression of the impedance.
摘要翻译：本发明的目的在于提供能够产生高密度等离子体的空间均匀分布的等离子体发生器。该目的通过以下结构实现。多个天线16位于真空室11的侧壁上，RF电源通过板状导体19并联连接到三个或四个天线16。每个天线16的导体的长度比真空室内产生的感应电磁波的四分之一波长短。以这种方式设置天线的导体的长度防止驻波的发生，从而保持等离子体在真空室内的均匀性。此外，板状导体19提高散热效率，这也有助于抑制阻抗。

14. 发明申请

US20140216928A1 THIN-FILM FORMATION SPUTTERING DEVICE 审中-公开
标题翻译：薄膜形成溅射装置
公开(公告)号：US20140216928A1
公开(公告)日：2014-08-07
申请号：US14240956
申请日：2011-08-30
申请人： Yuichi Setsuhara , Akinori Ebe
发明人： Yuichi Setsuhara , Akinori Ebe
IPC分类号： H01J37/34
CPC分类号： H01J37/3411 , C23C14/3471 , C23C14/358 , H01J37/321 , H01J37/3211 , H01J37/3408 , H01J37/3417
摘要： A thin-film formation sputtering device capable of forming a high-quality thin film at high rates is provided. A sputtering device includes a target holder provided in a vacuum container, a substrate holder facing the target holder, a means for introducing a plasma generation gas into the vacuum container, a means for generating an electric field for sputtering in a region including a surface of a target, an antenna placement room provided between inner and outer surfaces of a wall of the vacuum container as well as separated from an inner space of the vacuum container by a dielectric window, and a radio-frequency antenna, which is provided in the antenna placement room, for generating a radio-frequency induction electric field in the region including the surface of the target held by the target holder.
摘要翻译：提供能够以高速率形成高质量薄膜的薄膜形成溅射装置。溅射装置包括设置在真空容器中的靶保持器，面向靶保持器的基板保持器，用于将等离子体产生气体引入真空容器的装置，用于在包括表面的区域中产生用于溅射的电场的装置目标，设置在真空容器的壁的内表面和外表面之间以及通过介电窗与真空容器的内部空间分离的天线放置室，以及设置在天线中的射频天线放置室，用于在包括由目标保持器保持的目标表面的区域中产生射频感应电场。

15. 发明授权

US07880392B2 Plasma producing method and apparatus as well as plasma processing apparatus 有权
标题翻译：等离子体制造方法和装置以及等离子体处理装置
公开(公告)号：US07880392B2
公开(公告)日：2011-02-01
申请号：US11586583
申请日：2006-10-26
申请人： Kenji Kato , Hiroshige Deguchi , Hitoshi Yoneda , Kiyoshi Kubota , Akinori Ebe , Yuichi Setsuhara
发明人： Kenji Kato , Hiroshige Deguchi , Hitoshi Yoneda , Kiyoshi Kubota , Akinori Ebe , Yuichi Setsuhara
IPC分类号： C23C16/00
CPC分类号： H01J37/32954 , H01J37/321 , H01J37/32174
摘要： Plasma producing method and apparatus wherein a plurality of high-frequency antennas are arranged in a plasma producing chamber, and a high-frequency power supplied from a high-frequency power supply device (including a power source, a phase controller and the like) is applied to a gas in the chamber from the antennas to produce inductively coupled plasma. At least some of the plurality of high-frequency antennas are arranged in a fashion of such parallel arrangement that the antennas successively neighbor to each other and each of the antennas is opposed to the neighboring antenna. The high-frequency power supply device controls a phase of a high-frequency voltage applied to each antenna, and thereby controls an electron temperature of the inductively coupled plasma.
摘要翻译：等离子体制造方法和装置，其中多个高频天线布置在等离子体产生室中，并且从高频电源装置（包括电源，相位控制器等）提供的高频电力是从天线施加到腔室中的气体以产生电感耦合等离子体。多个高频天线中的至少一些以这样的并行布置的方式布置，使得天线彼此相邻并且每个天线与相邻天线相对。高频电源装置控制施加到每个天线的高频电压的相位，从而控制感应耦合等离子体的电子温度。

16. 发明申请

US20100189921A1 PLASMA GENERATING METHOD, PLASMA GENERATING APPARATUS, AND PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体发生方法，等离子体发生装置和等离子体处理装置
公开(公告)号：US20100189921A1
公开(公告)日：2010-07-29
申请号：US12753379
申请日：2010-04-02
申请人： Hiroshige DEGUCHI , Hitoshi Yoneda , Kenji Kato , Akinori Ebe , Yuichi Setsuhara
发明人： Hiroshige DEGUCHI , Hitoshi Yoneda , Kenji Kato , Akinori Ebe , Yuichi Setsuhara
IPC分类号： B01J19/08
CPC分类号： C23C16/509 , H01J37/32192 , H01J37/3222
摘要： A plasma generating method and apparatus which use plural high-frequency antennas 2 to generate inductively coupled plasma, and a plasma processing apparatus using the apparatus. The antennas 2 are identical to one another. Application of a high-frequency electric power to the antennas 2 is performed from a high-frequency power source 4 which is disposed commonly to the antennas 2, through one matching circuit 5 and one busbar 3. The busbar 3 is partitioned into sections the number of which is equal to that of the antennas, while setting a portion which is connected to the matching circuit 5, as a reference. One-end portions of the antennas are connected to corresponding sections 31, 32, 33 through power supplying lines 311, 321, 331. The other end portions of the antennas are grounded. The impedances of the sections of the busbar, and those of the power supplying lines are adjusted so that same currents flow through the antennas, and a same voltage is applied to the antennas. Therefore, the inductively coupled plasma is generated while uniformalizing high-frequency electric powers supplied to the antennas 2.
摘要翻译：使用多个高频天线2生成电感耦合等离子体的等离子体产生方法和装置以及使用该装置的等离子体处理装置。天线2彼此相同。通过一个匹配电路5和一个母线3，从天线2共同配置的高频电源4向天线2施加高频电力。母线3被分割为数字在设置连接到匹配电路5的部分作为参考时，其等于天线的天线。天线的一端部分通过供电线311,321,331连接到对应部分31,32,33。天线的另一端接地。调节母线段和供电线的部分的阻抗，使得相同的电流流过天线，并且向天线施加相同的电压。因此，在对提供给天线2的高频电力进行均匀化的同时产生电感耦合等离子体。

17. 发明授权

US06447850B1 Polycrystalline silicon thin film forming method 有权
标题翻译：多晶硅薄膜成型方法
公开(公告)号：US06447850B1
公开(公告)日：2002-09-10
申请号：US09581519
申请日：2000-08-22
申请人： Akinori Ebe , Naoto Kuratani , Eiji Takahashi
发明人： Akinori Ebe , Naoto Kuratani , Eiji Takahashi
IPC分类号： H05C100
CPC分类号： H01L31/182 , C23C16/24 , C23C16/509 , C23C16/52 , H01L21/02422 , H01L21/02532 , H01L21/0262 , Y02E10/546 , Y02P70/521
摘要： A method of forming a thin polycrystalline silicon film and a thin film forming apparatus allowing inexpensive formation of a thin polycrystalline silicon film at a relatively low temperature with high productivity. More specifically, a method of forming a thin polycrystalline silicon film and a thin film forming apparatus in which a state of plasma is controlled to achieve an emission intensity ratio of hydrogen atom radicals (H&bgr;) of one or more to the emission intensity of SiH* radicals in the plasma. The thin film forming apparatus of a plasma CVD type includes a deposition chamber accommodating a deposition target substrate, a discharging electrode for plasma formation connected to a discharging power source, a gas supply device for supplying a gas and an exhaust device, and further includes an emission-spectrometer and a probe measuring device as well as a control portion for controlling at least one of the power supply, the gas supply and gas exhausting, for maintaining a desired state of plasma based on information detected by them.
摘要翻译：一种形成薄多晶硅膜的方法和一种薄膜形成装置，其允许在相对低的温度下以高生产率廉价地形成薄多晶硅膜。更具体地，形成薄多晶硅膜的方法和薄膜形成装置，其中控制等离子体的状态以实现一个或多个氢原子自由基（Hbeta）与发光强度SiH *的发射强度比等离子体中的自由基。等离子体CVD型薄膜形成装置包括容纳沉积靶基板的沉积室，与放电电源连接的等离子体形成用放电电极，用于供给气体的气体供给装置和排气装置，还包括：发射光谱仪和探针测量装置以及用于控制电源，气体供应和气体排出中的至少一个的控制部分，用于基于由它们检测的信息来维持期望的等离子体状态。

18. 发明申请

US20140210337A1 ANTENNA FOR PLASMA PROCESSING DEVICE, AND PLASMA PROCESSING DEVICE USING THE SAME 审中-公开
标题翻译：用于等离子体处理装置的天线和使用该等离子体处理装置的等离子体处理装置
公开(公告)号：US20140210337A1
公开(公告)日：2014-07-31
申请号：US14240915
申请日：2011-08-30
申请人： Yuichi Setsuhara , Akinori Ebe
发明人： Yuichi Setsuhara , Akinori Ebe
IPC分类号： H01J37/32
CPC分类号： H01J37/32651 , C23C14/358 , C23C16/509 , H01J37/32082 , H01J37/321 , H01J37/3211 , H01J2237/0266 , H05H1/46 , H05H2001/4667
摘要： A radio-frequency antenna includes a linear antenna conductor, a dielectric protective pipe provided around the antenna conductor, and a deposit shield provided around the protective pipe, the deposit shield covering at least one portion of the protective pipe and having at least one opening on any line extending along the length of the antenna conductor. Although the thin-film material adheres to the surfaces of the protective pipe and the deposit shield, the deposited substance has at least one discontinuous portion in the longitudinal direction of the antenna conductor. Therefore, in the case where the thin-film material is electrically conductive, the blocking of the radio-frequency induction electric field is prevented. In the case where the thin-film material is not electrically conductive, an attenuation in the intensity of the radio-frequency induction electric field is suppressed.
摘要翻译：射频天线包括线性天线导体，设置在天线导体周围的介质保护管，以及设置在保护管周围的沉积屏蔽层，该沉积屏蔽覆盖至少一部分保护管，并具有至少一个开口任何沿着天线导体的长度延伸的线。尽管薄膜材料粘附在保护管和沉积屏蔽的表面上，但沉积物质在天线导体的纵向上具有至少一个不连续部分。因此，在薄膜材料导电的情况下，防止了射频感应电场的阻塞。在薄膜材料不导电的情况下，抑制了射频感应电场强度的衰减。

19. 发明申请

US20130043128A1 SPUTTERING SYSTEM 审中-公开
标题翻译：喷射系统
公开(公告)号：US20130043128A1
公开(公告)日：2013-02-21
申请号：US13583417
申请日：2011-03-08
申请人： Akinori Ebe , Masanori Watanabe
发明人： Akinori Ebe , Masanori Watanabe
IPC分类号： C23C14/34
CPC分类号： C23C14/3407 , C23C14/3464 , H01J37/34 , H01J37/3488
摘要： The present invention aims at providing a sputtering system capable of efficiently generating high-density plasma near the surface of a sputter target and forming a film at a high rate. It also aims at providing a large-area sputtering system and a plasma processing system having a simple structure and allowing the sputter target to be easily attached/detached, maintained, or operated otherwise. The present invention provides a sputtering system in which an inductively-coupled antenna conductor plate is attached to a portion of a vacuum chamber, wherein: a sputter target plate is attached to the inductively-coupled antenna conductor on its plasma formation space side; one end of the antenna conductor is connected to a radio-frequency power source; and the other end is grounded through a capacitor. A plurality of antenna conductors may be provided to form a large-area sputtering system.
摘要翻译：本发明的目的在于提供一种溅射系统，其能够在溅射靶的表面附近有效地生成高密度等离子体并以高速率形成膜。它还旨在提供具有简单结构的大面积溅射系统和等离子体处理系统，并且允许溅射靶容易地附接/分离，维持或操作。本发明提供一种溅射系统，其中感应耦合的天线导体板附着在真空室的一部分上，其中：溅射靶板安装在其等离子体形成空间侧的电感耦合天线导体上; 天线导体的一端连接到射频电源; 另一端通过电容器接地。可以提供多个天线导体以形成大面积溅射系统。

20. 发明申请

US20110203922A1 THIN-FILM FORMING SPUTTERING SYSTEM 有权
标题翻译：薄膜成型粉碎系统
公开(公告)号：US20110203922A1
公开(公告)日：2011-08-25
申请号：US13059318
申请日：2009-08-25
申请人： Yuichi Setsuhara , Akinori Ebe , Jeong Han
发明人： Yuichi Setsuhara , Akinori Ebe , Jeong Han
IPC分类号： C23C14/35
CPC分类号： H01J37/3408 , C23C14/3407 , C23C14/358 , H01J37/321 , H01J37/3211 , H01J37/3411 , H01J37/3417
摘要： A thin-film forming sputtering system capable of a sputtering process at a high rate. A thin-film forming sputtering system includes: a vacuum container; a target holder located inside the vacuum container; a target holder located inside the vacuum container; a substrate holder opposed to the target holder; a power source for applying a voltage between the target holder and the substrate holder: a magnetron-sputtering magnet provided behind the target holder, for generating a magnetic field having a component parallel to a target; and radio-frequency antennae for generating radio-frequency inductively-coupled plasma within a space in the vicinity of the target where the magnetic field generated by the magnetron sputtering magnet has a strength equal to or higher than a predetermined level. The radio-frequency inductively-coupled plasma generated by the radio-frequency antennae promotes the supply of electrons into the aforementioned magnetic field, so that the sputtering process can be performed at a high rate.
摘要翻译：能够高速溅射工艺的薄膜形成溅射系统。薄膜形成溅射系统包括：真空容器; 位于真空容器内的目标支架; 位于真空容器内的目标支架; 与靶保持器相对的衬底保持器; 用于在目标保持器和基板保持器之间施加电压的电源;设置在目标保持器后面的磁控溅射磁体，用于产生具有与目标平行的分量的磁场; 以及用于在由磁控溅射磁体产生的磁场具有等于或高于预定水平的强度的目标附近的空间内产生射频感应耦合等离子体的射频天线。由射频天线产生的射频感应耦合等离子体促进电子向上述磁场的供给，从而可以高速率进行溅射处理。

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