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11. 发明授权

US07440082B2 Method of predicting and minimizing model OPC deviation due to mix/match of exposure tools using a calibrated eigen decomposition model 有权
标题翻译：使用校准的特征分解模型预测和最小化由于曝光工具的混合/匹配造成的OPC偏差的方法
公开(公告)号：US07440082B2
公开(公告)日：2008-10-21
申请号：US11819366
申请日：2007-06-27
申请人： Xuelong Shi , Jang Fung Chen
发明人： Xuelong Shi , Jang Fung Chen
IPC分类号： G03B27/32
CPC分类号： G03F7/705 , G03F1/36 , G03F1/68 , G03F1/70 , G03F7/70441 , G03F7/70516 , G03F7/70525
摘要： A method for generating models for simulating the imaging performance of a plurality of exposure tools. The method includes the steps of: generating a calibrated model for a first exposure tool capable of estimating an image to be produced by the first exposure tool for a given photolithography process, where the calibrated model includes a first set of basis functions; generating a model of a second exposure tool capable of estimating an image to be produced by the second exposure tool for the photolithography process, where the model includes a second set of basis functions; and representing the second set of basis functions as a linear combination of the first set of basis functions so as to generate an equivalent model function corresponding to the second exposure tool, where the equivalent model function produces a simulated image corresponding to the image generated by the second exposure tool for the photolithography process.
摘要翻译：一种用于产生用于模拟多个曝光工具的成像性能的模型的方法。该方法包括以下步骤：产生用于第一曝光工具的校准模型，该第一曝光工具能够对于给定的光刻工艺估计由第一曝光工具产生的图像，其中校准模型包括第一组基础函数; 生成第二曝光工具的模型，其能够估计由用于光刻工艺的第二曝光工具产生的图像，其中模型包括第二组基础功能; 并且将所述第二组基函数表示为所述第一组基函数的线性组合，以便生成与所述第二曝光工具相对应的等效模型函数，其中所述等效模型函数产生与由所述第二曝光工具生成的图像相对应的模拟图像用于光刻工艺的第二曝光工具。

12. 发明授权

US07550235B2 Method and apparatus for performing model based placement of phase-balanced scattering bars for sub-wavelength optical lithography 有权
标题翻译：用于亚波长光学光刻的相位平衡散射棒的基于模型的放置方法和装置
公开(公告)号：US07550235B2
公开(公告)日：2009-06-23
申请号：US10933496
申请日：2004-09-03
申请人： Xuelong Shi , Jang Fung Chen , Thomas Laidig , Kurt E. Wampler , Douglas Van Den Broeke
发明人： Xuelong Shi , Jang Fung Chen , Thomas Laidig , Kurt E. Wampler , Douglas Van Den Broeke
IPC分类号： G03F1/02
CPC分类号： G03F7/705 , G03F1/36
摘要： A method of generating a mask design having optical proximity correction features disposed therein. The methods includes the steps of obtaining a desired target pattern having features to be imaged on a substrate; determining a first interference map based on the target pattern, which defines areas of constructive interference between at least one of the features to be imaged and a field area adjacent the at least one feature; placing a first set of assist features having a first phase in the mask design based on the areas of constructive interference defined by the first interference map; determining a second interference map based on the first set of assist features, which defines areas of constructive interference between assist features of the first set of assist features and a field area adjacent at least one of the assist features of the first set of assist features; and placing a second set of assist features having a second phase in the mask design based on the areas of constructive interference defined by the second interference map, wherein the first phase does not equal the second phase.
摘要翻译：一种产生具有设置在其中的光学邻近校正特征的掩模设计的方法。所述方法包括以下步骤：获得具有要在基底上成像的特征的期望目标图案; 基于所述目标图案来确定第一干涉图，所述目标图案定义要成像的至少一个要素与邻近所述至少一个特征的场区域之间的建构性干扰的区域; 基于由第一干涉图定义的建构性干扰的区域，在掩模设计中放置具有第一相位的第一组辅助特征; 基于所述第一组辅助特征确定第二干涉图，所述第一组辅助特征限定所述第一组辅助特征的辅助特征之间的建构性干扰的区域和与所述第一组辅助特征的所述辅助特征中的至少一个邻近的场区域; 以及基于由所述第二干涉图定义的构成性干扰的区域，将具有第二相位的第二组辅助特征放置在所述掩模设计中，其中所述第一相位不等于所述第二相位。

13. 发明授权

US07506299B2 Feature optimization using interference mapping lithography 有权
标题翻译：使用干涉映射光刻的特征优化
公开(公告)号：US07506299B2
公开(公告)日：2009-03-17
申请号：US10975342
申请日：2004-10-29
申请人： Robert John Socha , Xuelong Shi , Douglas Van Den Broeke , Jang Fung Chen
发明人： Robert John Socha , Xuelong Shi , Douglas Van Den Broeke , Jang Fung Chen
IPC分类号： G06F17/50
CPC分类号： G03F7/70441 , G03F1/36 , G03F7/70125
摘要： Disclosed concepts include a method of, and program product for, optimizing an illumination profile of a pattern to be formed in a surface of a substrate relative to a given mask. Steps include mathematically representing resolvable feature(s) from the given mask, generating an interference map representation from the previous step, modifying the interference map representation to maximize intensity corresponding to the resolvable features, and determining assist feature size(s) such that intensity side lobes do not print.
摘要翻译：公开的概念包括用于优化相对于给定掩模在衬底表面中形成的图案的照明轮廓的方法和程序产品。步骤包括在数学上表示来自给定掩码的可解析特征，从前一步骤生成干涉图表示，修改干涉图表示以最大化对应于可解析特征的强度，以及确定辅助特征尺寸，使强度侧裂片不打印。

14. 发明授权

US07376930B2 Method, program product and apparatus for generating assist features utilizing an image field map 有权
标题翻译：用于利用图像场图产生辅助特征的方法，程序产品和装置
公开(公告)号：US07376930B2
公开(公告)日：2008-05-20
申请号：US10878490
申请日：2004-06-29
申请人： Kurt E. Wampler , Douglas Van Den Broeke , Uwe Hollerbach , Xuelong Shi , Jang Fung Chen
发明人： Kurt E. Wampler , Douglas Van Den Broeke , Uwe Hollerbach , Xuelong Shi , Jang Fung Chen
IPC分类号： G06F17/50 , G03F1/00
CPC分类号： G03F1/36 , G03F7/70433 , G03F7/70441
摘要： Disclosed concepts include a method, program product and apparatus for generating assist features for a pattern to be formed on the surface of a substrate by generating an image field map corresponding to the pattern. Characteristics are extracted from the image field map, and assist features are generated for the pattern in accordance with the characteristics extracted in step. The assist features may be oriented relative to a dominant axis of a contour of the image field map. Also, the assist features may be polygon-shaped and sized to surround the contour or relative to the inside of the contour. Moreover, the assist features may be placed in accordance with extrema identified from the image field map. Utilizing the image field map, a conventional and complex two-dimensional rules-based approach for generating assist feature can be obviated.
摘要翻译：所公开的概念包括通过产生对应于图案的图像场图来产生要形成在基板的表面上的图案的辅助特征的方法，程序产品和装置。从图像场图中提取特征，并根据步骤中提取的特征为图案生成辅助特征。辅助特征可以相对于图像场图的轮廓的主轴定向。此外，辅助特征可以是多边形形状并且尺寸设计成围绕轮廓或相对于轮廓的内部。此外，可以根据从图像场地图识别的极值放置辅助特征。利用图像场图，可以避免用于产生辅助特征的常规和复杂的基于二维规则的方法。

15. 发明授权

US07342646B2 Method of manufacturing reliability checking and verification for lithography process using a calibrated eigen decomposition model 有权
标题翻译：使用校准的特征分解模型制造光刻工艺的可靠性检查和验证方法
公开(公告)号：US07342646B2
公开(公告)日：2008-03-11
申请号：US11051559
申请日：2005-01-27
申请人： Xuelong Shi , Jang Fung Chen
发明人： Xuelong Shi , Jang Fung Chen
IPC分类号： G03B27/32
CPC分类号： G06F17/5081 , G03F1/36 , G03F1/44 , G03F1/68 , G03F7/70425 , G03F7/705 , G03F7/70516 , G03F7/70525 , G03F7/70666 , G06F2217/12 , Y02P90/265
摘要： A method for modeling a photolithography process which includes the steps of generating a calibrated model of the photolithography process capable of estimating an image to be produced by the photolithography process when utilized to image a mask pattern containing a plurality features; and determining an operational window of the calibrated model, which defines whether or not the calibrated model can accurately estimate the image to be produced by a given feature in the mask pattern.
摘要翻译：一种用于对光刻工艺进行建模的方法，其包括以下步骤：产生光刻工艺的校准模型，其能够估计当通过光刻工艺生产的图像，以便对含有多个特征的掩模图案进行成像; 以及确定所述校准模型的操作窗口，其定义所述校准模型是否可以准确地估计由所述掩模图案中的给定特征产生的图像。

16. 发明授权

US07124395B2 Automatic optical proximity correction (OPC) rule generation 有权
标题翻译：自动光学邻近校正（OPC）规则生成
公开(公告)号：US07124395B2
公开(公告)日：2006-10-17
申请号：US10626864
申请日：2003-07-25
申请人： Xuelong Shi , Jang Fung Chen
发明人： Xuelong Shi , Jang Fung Chen
IPC分类号： G06F17/50
CPC分类号： G03F7/70441 , G03F1/36
摘要： A method of automatically applying optical proximity correction techniques to a reticle design containing a plurality of features. The method comprises the steps of: (1) generating a first set of rules for applying scatter bar assist features to the plurality of features for a given illumination setting; (2) generating a second set of rules for applying biasing to the plurality of features for said given illumination setting; (3) forming a look-up table containing the first set of rules and the second set of rules; and (4) analyzing each of the plurality of features with the first set of rules and the second set of rules contained in the look-up table to determine if either the first set of rules or the second set of rules is applicable to a given feature. If either the first set of rules or the second set of rules is applicable to the given feature, the given feature is modified in accordance with the applicable rule.
摘要翻译：一种将光学邻近校正技术自动应用于包含多个特征的掩模版设计的方法。该方法包括以下步骤：（1）产生第一组规则，用于在给定的照明设置下将散射条辅助特征应用于多个特征; （2）产生用于对所述给定照明设置对所述多个特征施加偏压的第二组规则; （3）形成包含第一组规则和第二组规则的查找表; 以及（4）利用第一组规则和包含在查找表中的第二组规则来分析多个特征中的每一个，以确定第一组规则或第二组规则是否适用于给定的特征。如果第一组规则或第二组规则适用于给定特征，则给定特征根据适用规则进行修改。

17. 发明申请

US20130055171A1 Method, Program Product and Apparatus for Performing Double Exposure Lithography 有权
标题翻译：用于进行双重曝光光刻的方法，程序产品和装置
公开(公告)号：US20130055171A1
公开(公告)日：2013-02-28
申请号：US13401820
申请日：2012-02-21
申请人： Jang Fung Chen , Duan-Fu Stephen Hsu , Douglas Van Den Broeke
发明人： Jang Fung Chen , Duan-Fu Stephen Hsu , Douglas Van Den Broeke
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , G03F1/144 , G03F1/70 , G03F7/70466 , G06F2217/08 , G06F2217/12
摘要： A method of generating complementary masks based on a target pattern having features to be imaged on a substrate for use in a multiple-exposure lithographic imaging process is disclosed. The method includes defining an initial H-mask and an initial V-mask corresponding to the target pattern; identifying horizontal critical features in the H-mask and vertical critical features in the V-mask; assigning a first phase shift and a first percentage transmission to the horizontal critical features, which are to be formed in the H-mask; and assigning a second phase shift and a second percentage transmission to the vertical critical features, which are to be formed in the V-mask. The method further includes the step of assigning chrome to all non-critical features in the H-mask and the V-mask.
摘要翻译：公开了一种基于具有待成像在基板上的特征的目标图案产生互补掩模以在多次曝光光刻成像过程中使用的方法。该方法包括定义对应于目标图案的初始H掩模和初始V掩模; 识别V面罩中H面罩和垂直关键特征的水平关键特征; 将第一相移和第一百分比传输分配给要在H掩模中形成的水平临界特征; 以及将要在V掩模中形成的垂直关键特征分配第二相移和第二百分比传输。该方法还包括将铬分配给H掩模和V掩模中的所有非关键特征的步骤。

18. 发明申请

US20110236808A1 Method and Apparatus for Performing Dark Field Double Dipole Lithography (DDL) 有权
公开(公告)号：US20110236808A1
公开(公告)日：2011-09-29
申请号：US13155259
申请日：2011-06-07
申请人： Duan-Fu Stephen Hsu , Sangbong Park , Douglas Van Den Broeke , Jang Fung Chen
发明人： Duan-Fu Stephen Hsu , Sangbong Park , Douglas Van Den Broeke , Jang Fung Chen
IPC分类号： G03F1/00
CPC分类号： G03F1/36 , G03F1/70 , G03F7/70125 , G03F7/70466
摘要： A method of generating complementary masks for use in a dark field double dipole imaging process. The method includes the steps of identifying a target pattern having a plurality of features, including horizontal and vertical features; generating a horizontal mask based on the target pattern, where the horizontal mask includes low contrast vertical features. The generation of the horizontal mask includes the steps of optimizing the bias of the low contrast vertical features contained in the horizontal mask; and applying assist features to the horizontal mask. The method further includes generating a vertical mask based on the target pattern, where the vertical mask contains low contrast horizontal features. The generation of the vertical mask includes the steps of optimizing the bias of low contrast horizontal features contained in the vertical mask; and applying assist features to the vertical mask.

19. 发明授权

US07981576B2 Method and apparatus for performing dark field double dipole lithography (DDL) 有权
标题翻译：用于进行暗场双偶极子光刻（DDL）的方法和装置
公开(公告)号：US07981576B2
公开(公告)日：2011-07-19
申请号：US12890494
申请日：2010-09-24
申请人： Duan-Fu Stephen Hsu , Sangbong Park , Douglas Van Den Broeke , Jang Fung Chen
发明人： Duan-Fu Stephen Hsu , Sangbong Park , Douglas Van Den Broeke , Jang Fung Chen
IPC分类号： G03F1/00 , G03F1/14 , G06F17/50
CPC分类号： G03F1/36 , G03F1/70 , G03F7/70125 , G03F7/70466
摘要： A method of generating complementary masks for use in a dark field double dipole imaging process. The method includes the steps of identifying a target pattern having a plurality of features, including horizontal and vertical features; generating a horizontal mask based on the target pattern, where the horizontal mask includes low contrast vertical features. The generation of the horizontal mask includes the steps of optimizing the bias of the low contrast vertical features contained in the horizontal mask; and applying assist features to the horizontal mask. The method further includes generating a vertical mask based on the target pattern, where the vertical mask contains low contrast horizontal features. The generation of the vertical mask includes the steps of optimizing the bias of low contrast horizontal features contained in the vertical mask; and applying assist features to the vertical mask.
摘要翻译：一种产生用于暗场双偶极成像过程的互补掩模的方法。该方法包括以下步骤：识别具有多个特征的目标图案，包括水平和垂直特征; 基于目标图案生成水平掩模，其中水平掩模包括低对比度垂直特征。水平掩模的生成包括优化包含在水平掩模中的低对比度垂直特征的偏压的步骤; 并将辅助特征应用于水平掩模。该方法还包括基于目标图案生成垂直掩模，其中垂直掩模包含低对比度水平特征。垂直掩模的产生包括优化垂直掩模中包含的低对比度水平特征的偏差的步骤; 并将辅助特征应用于垂直掩模。

20. 发明授权

US07523438B2 Method for improved lithographic patterning utilizing optimized illumination conditions and high transmission attenuated PSM 有权
标题翻译：利用优化照明条件和高透射衰减PSM改进光刻图案的方法
公开(公告)号：US07523438B2
公开(公告)日：2009-04-21
申请号：US11108665
申请日：2005-04-19
申请人： Michael Hsu , Stephen Hsu , Thomas Laidig , Douglas Van Den Broeke , Jang Fung Chen
发明人： Michael Hsu , Stephen Hsu , Thomas Laidig , Douglas Van Den Broeke , Jang Fung Chen
IPC分类号： G06F17/50 , G03F1/00
CPC分类号： G03F1/32 , G03F7/70091 , G03F7/70125 , G03F7/70283 , G03F7/70466 , G03F7/70591
摘要： A method for optically transferring a lithographic pattern corresponding to an integrated circuit utilizing a high transmission attenuated phase-shift mask onto a semiconductor substrate by use of an optical exposure tool. The method comprising the steps of generating a diffraction pattern corresponding to the lithographic pattern, where the diffraction pattern indicates a plurality of spatial frequency components corresponding to the lithographic pattern; determining which of the spatial frequency components need to be captured by a lens in the optical exposure tool in order to accurately reproduce the lithographic pattern; determining a set of illumination conditions required for the optical exposure tool to capture the spatial frequency components necessary for accurately reproducing the lithographic pattern; and illuminating the high transmission attenuated phase-shift mask with this set of illumination conditions.
摘要翻译：一种通过使用光学曝光工具将对应于利用高透射衰减相移掩模的集成电路的光刻图案光学转移到半导体衬底上的方法。该方法包括以下步骤：产生对应于光刻图案的衍射图案，其中衍射图案表示对应于光刻图案的多个空间频率分量; 确定哪个空间频率分量需要被光学曝光工具中的透镜捕获，以便准确地再现光刻图案; 确定所述光学曝光工具所需的一组照明条件以捕获准确地再现所述光刻图案所需的空间频率分量; 并用该组照明条件照亮高透射衰减相移掩模。

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