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11. 发明申请

US20050231853A1 Current-in-the-plane spin valve magnetoresistive sensor with dual metal oxide capping layers 失效
标题翻译：具有双金属氧化物覆盖层的电流在平面自旋阀磁阻传感器
公开(公告)号：US20050231853A1
公开(公告)日：2005-10-20
申请号：US10824701
申请日：2004-04-14
申请人： Jinshan Li , Brian York , Alexander Zeltser
发明人： Jinshan Li , Brian York , Alexander Zeltser
IPC分类号： G11B5/127 , G11B5/33 , G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3929 , G11B2005/3996
摘要： A bottom-pinned current-in-the-plane spin-valve magnetoresistive sensor has a dual metal-oxide capping layer on the top ferromagnetic free layer. The first capping layer is formed on the free layer and is one or more oxides of zinc (Zn). The second capping layer is formed on the first capping layer and is an oxide of a metal having an affinity for oxygen greater than Zn, such as one or more oxides of Ta, Al, Hf, Zr, Y, Ti, W, Si, V, Mg, Cr, Nb, Mo and Mn.
摘要翻译：底部固定的电流在平面中的自旋阀磁阻传感器在顶部铁磁自由层上具有双金属氧化物覆盖层。第一覆盖层形成在自由层上，并且是锌（Zn）的一种或多种氧化物。第二覆盖层形成在第一覆盖层上，并且是具有大于Zn的氧的亲和性的金属的氧化物，例如一种或多种Ta，Al，Hf，Zr，Y，Ti，W，Si， V，Mg，Cr，Nb，Mo和Mn。

12. 发明申请

US20050180112A1 Depositing a pinned layer structure in a self-pinned spin valve 有权
标题翻译：在自锁自旋阀中沉积钉扎层结构
公开(公告)号：US20050180112A1
公开(公告)日：2005-08-18
申请号：US10782208
申请日：2004-02-18
申请人： Daniele Mauri , Alexander Zeltser
发明人： Daniele Mauri , Alexander Zeltser
IPC分类号： G11B5/39 , H05K7/20
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3906 , G11B2005/3996
摘要： The pinned layer structure in a self-pinned spin valve is deposited using a DC aligning field. The deposition of each of the Reference and Keeper layer in the pinned layer occurs within two different polarity DC aligning fields. Thus, a first portion of the Reference layer is deposited with a DC alignment field of a first polarity, i.e., either positive or negative, and a second portion of the Reference layer is deposited in a DC alignment field of opposite polarity. The Keeper layer is similarly deposited, with a first portion of the Keeper layer deposited in a first polarity DC alignment field and the second portion deposited in the opposite polarity DC alignment field. By splitting the deposition of the Reference and Keeper layers into portions using DC aligning fields the pinned layer structure is highly repeatable while providing a good thickness uniformity of the structure.
摘要翻译：使用直流对准场沉积自锁自旋阀中的钉扎层结构。参考和守护层中的每一个在被钉扎层中的沉积发生在两个不同极性的直流对准场内。因此，参考层的第一部分被沉积有第一极性的DC对准场，即正或负，并且参考层的第二部分沉积在相反极性的DC对准场中。 Keeper层类似地沉积，Keeper层的第一部分沉积在第一极性DC对准场中，而第二部分沉积在相反极性的DC对准场中。通过使用直流对准场将参考和守恒分层的沉积分裂成部分，钉扎层结构是高度可重复的，同时提供了良好的结构厚度均匀性。

13. 发明授权

US08392487B1 Programmable matrix processor 有权
标题翻译：可编程矩阵处理器
公开(公告)号：US08392487B1
公开(公告)日：2013-03-05
申请号：US12058783
申请日：2008-03-31
申请人： Michael Mesh , Michael Laor , Alexander Zeltser
发明人： Michael Mesh , Michael Laor , Alexander Zeltser
IPC分类号： G06E1/04 , G06F1/32
CPC分类号： G06F17/16
摘要： A matrix processor and processing method, the processor including a data encoder for receiving an input data stream; a data controller coupled to the data encoder for arranging the input data in an operand matrix, at least one processing unit for processing the data in matrix form by Boolean matrix-matrix multiplication with a selected operator matrix, and an output control module coupled to the processing unit for outputting desired results therefrom.
摘要翻译：一种矩阵处理器和处理方法，所述处理器包括用于接收输入数据流的数据编码器; 耦合到所述数据编码器的数据控制器，用于将所述输入数据布置在操作数矩阵中;至少一个处理单元，用于通过与选择的运算符矩阵的布尔矩阵乘法以矩阵形式处理所述数据;以及输出控制模块，处理单元，用于从其输出期望的结果。

14. 发明授权

US08325403B1 Optical programmable matrix processor 有权
标题翻译：光学可编程矩阵处理器
公开(公告)号：US08325403B1
公开(公告)日：2012-12-04
申请号：US12395737
申请日：2009-03-02
申请人： Michael Mesh , Michael Laor , Alexander Zeltser
发明人： Michael Mesh , Michael Laor , Alexander Zeltser
IPC分类号： G02F3/00
CPC分类号： G02F3/028
摘要： A bit-matrix processor including a pair of optoelectronic matrices and a controller for causing the matrices to perform Boolean Matrix transforms to perform logical operations, wherein Boolean logical equivalents include logical AND to replace element-wise multiplication, and logical OR instead of summation. According to one embodiment, the processor includes an optical source matrix for receiving input binary data; a passive optical replicator for replicating a pattern on the optical source matrix and projecting it onto a Spatial Light Modulator (SLM); a database loading device for loading data onto the SLM thereby to perform logical AND with the optical source matrix data; an integrating device for integrating light from the SLM onto a photodiode matrix; and an output signal processing device.
摘要翻译：包括一对光电矩阵的位矩阵处理器和用于使矩阵执行布尔矩阵变换以执行逻辑运算的控制器，其中布尔逻辑等价物包括逻辑“与”以代替逐位乘法，逻辑“否”而不是求和。根据一个实施例，处理器包括用于接收输入二进制数据的光源矩阵; 用于在光源矩阵上复制图案并将其投影到空间光调制器（SLM）上的无源光学复制器; 用于将数据加载到SLM上的数据库加载装置，从而与光源矩阵数据执行逻辑AND; 用于将来自SLM的光集成到光电二极管矩阵上的积分装置; 和输出信号处理装置。

15. 发明申请

US20080194978A1 Apparatus and Method for Analysis of High Frequency Qrs Complexes 有权
标题翻译：高频Qrs复合物分析装置及方法
公开(公告)号：US20080194978A1
公开(公告)日：2008-08-14
申请号：US11579273
申请日：2005-05-01
申请人： Amir Beker , Orna Bregman-Amitai , Alexander Zeltser
发明人： Amir Beker , Orna Bregman-Amitai , Alexander Zeltser
IPC分类号： A61B5/0472
CPC分类号： A61B5/0472 , A61B5/0452
摘要： An apparatus for QRS waveform quantifying, comprising: an input unit, for receiving one or more high frequency (HF) range QRS complexes from one or more ECG leads, a primary analyzer, for calculating a primary index from the high frequency (HF) range QRS complex, and a secondary analyzer, connected after the primary analyzer, for deriving a secondary index from the primary index, thereby to provide a quantification of QRS complexes.
摘要翻译：一种用于QRS波形量化的装置，包括：输入单元，用于从一个或多个ECG导联接收一个或多个高频（HF）范围QRS复合物，主分析器，用于从高频（HF）范围计算主要指标 QRS复合物和次级分析仪，在主分析仪之后连接，用于从主要指标导出次级指数，从而提供QRS复合物的定量。

16. 发明申请

US20080024937A1 CPP read sensor having constrained current paths made of lithographically-defined conductive vias with surrounding oxidized metal sublayers 有权
标题翻译： CPP读取传感器具有由具有周围的氧化金属子层的光刻定义的导电通孔制成的约束电流路径
公开(公告)号：US20080024937A1
公开(公告)日：2008-01-31
申请号：US11496604
申请日：2006-07-31
申请人： Hardayal Singh Gill , Jordan Asher Katine , Alexander Zeltser
发明人： Hardayal Singh Gill , Jordan Asher Katine , Alexander Zeltser
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/398 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3906 , G11B5/3983 , H01F41/306 , H01F41/308 , Y10T29/49046 , Y10T29/49052
摘要： Current-perpendicular-to-plane (CPP) read sensors having constrained current paths made of lithographically-defined conductive vias with surrounding oxidized metal sublayers, and methods of making the same, are disclosed. In one illustrative example, at least part of a sensor stack structure which includes an electrically conductive spacer layer is formed. A metal (e.g. Ta) sublayer is then deposited over and adjacent the spacer layer, followed by one of an oxidation process, a nitridation process, and an oxynitridation process, to produce an insulator (e.g. TaOx) from the metal sublayer. The metal sublayer deposition and oxidation/nitridation/oxynitridation processes are repeated as necessary to form the insulator with a suitable thickness. Next, a resist structure which exposes one or more portions of the insulator is formed over the insulator. With the resist structure in place, exposed insulator materials are removed by etching to form one or more apertures through the insulator down to the spacer layer. Electrically conductive materials are subsequently deposited within the one or more apertures to form one or more lithographically-defined conductive vias of a current-constraining structure. Advantageously, the lithographically-defined conductive vias increase the current density of the read sensor in the region of the sensing layers to thereby simultaneously increase its resistance and magnetoresistance. With use of the process of oxidation, nitridation, or oxynitridation on each metal sublayer, degradation of the spacer layer is reduced or eliminated such that the desirable soft magnetics of the sensing layers in the read sensor are maintained.
摘要翻译：公开了具有由具有周围氧化金属子层的光刻定义的导电通孔制成的约束电流路径的电流垂直平面（CPP）读取传感器及其制造方法。在一个说明性示例中，形成包括导电间隔层的传感器堆叠结构的至少一部分。然后将金属（例如Ta）子层沉积在间隔层上并与其相邻，随后是氧化工艺，氮化工艺和氧氮化工艺中的一种，以从金属子层产生绝缘体（例如TaO x）。根据需要重复金属亚层沉积和氧化/氮化/氧氮化处理以形成具有合适厚度的绝缘体。接下来，在绝缘体上形成露出绝缘体的一个或多个部分的抗蚀剂结构。在抗蚀剂结构就位的情况下，通过蚀刻去除暴露的绝缘体材料，以形成穿过绝缘体的一个或多个孔向下到间隔层。导电材料随后沉积在一个或多个孔内以形成电流约束结构的一个或多个光刻定义的导电通孔。有利地，光刻定义的导电通孔增加读取传感器在感测层的区域中的电流密度，从而同时增加其电阻和磁阻。通过使用在每个金属子层上的氧化，氮化或氧氮化的过程，间隔层的劣化被减少或消除，使得保持读取传感器中感测层的期望的软磁性。

17. 发明申请

US20070047153A1 Magnetic sensing devices having an insulator structure with a plurality of oxidized, nitrided, or oxynitrided sublayers and methods of making the same 有权
标题翻译：具有多个氧化，氮化或氧氮化亚层的绝缘体结构的磁感测装置及其制造方法
公开(公告)号：US20070047153A1
公开(公告)日：2007-03-01
申请号：US11219107
申请日：2005-09-01
申请人： Alexander Zeltser
发明人： Alexander Zeltser
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3163 , G11B5/3906 , H01F10/3254 , H01F10/3272 , H01F10/3281 , H01F41/18 , H01F41/303 , H01F41/325 , Y10T29/49043 , Y10T29/49044
摘要： A magnetic sensing device for use in a magnetic head includes a sensor stack structure having a sensing layer structure and an insulator structure formed adjacent the sensing layer structure. The insulator structure includes a plurality of oxidized metallic sublayers, a plurality of nitrided metallic sublayers, or a plurality of oxynitrided metallic sublayers. The insulator structure may be a capping layer structure of a giant magnetoresistance sensor or, alternatively, a tunnel barrier layer structure of a tunneling magnetoresistance sensor or a magnetic random access memory. Advantageously, each treated metallic sublayer is sufficiently uniformly treated so as to increase the magnetoresistive effect and improve soft magnetic properties of the magnetic sensing device. A method for use in forming the magnetic sensing device of the present application includes the steps of forming a sensor stack structure which includes a sensing layer structure; depositing a metallic layer; performing, on the metallic layer, either an oxidation, nitridation, or oxynitridation process; and repeating the steps of depositing and performing one or more times to thereby form an insulator structure.
摘要翻译：用于磁头的磁感测装置包括具有传感层结构的传感器堆叠结构和邻近传感层结构形成的绝缘体结构。绝缘体结构包括多个氧化金属子层，多个氮化金属子层或多个氮氧化金属子层。绝缘体结构可以是巨磁阻传感器的封盖层结构，或者是隧道磁阻传感器或磁随机存取存储器的隧道势垒层结构。有利地，每个经处理的金属子层被充分均匀地处理，以增加磁阻效应并改善磁感测装置的软磁特性。用于形成本申请的磁感测装置的方法包括以下步骤：形成包括感测层结构的传感器堆叠结构; 沉积金属层; 在金属层上进行氧化，氮化或氧氮化处理; 并重复沉积和执行一次或多次以形成绝缘体结构的步骤。

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