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    • 18. 发明申请
    • Semiconductor device with low resistance contacts
    • 具有低电阻触点的半导体器件
    • US20060017110A1
    • 2006-01-26
    • US10895553
    • 2004-07-21
    • Olubunmi AdetutuWilliam Taylor
    • Olubunmi AdetutuWilliam Taylor
    • H01L21/00H01L21/84H01L21/336H01L29/76H01L29/94H01L31/062H01L31/113H01L31/119
    • H01L21/28518H01L21/26506H01L21/28044H01L21/28052H01L21/823814H01L21/823835H01L29/456
    • An N channel transistor and a P channel transistor have their source/drains contacts with different suicides to provide for low resistance contacts. The silicides are chosen to provide good matching of the work functions. The P-type source/drain contacts of the P channel transistors have a silicide that is close to the P work function of 5.2 electron volts, and the N-type source/drain contacts of the N channel transistors have a silicide that is close to the N work function of 4.1 electron volts. This provides for a lower resistance at the interface between these source/drain contact regions and the corresponding silicide. These suicides with differing work functions are achieved with implants as needed. For example, for N-type source/drain contacts and a base metal of cobalt, titanium, or nickel, the implanted material is platinum and/or iridium. For the P-type, the implanted material is erbium, yttrium, dysprosium, gadolinium, hafnium, or holmium.
    • N沟道晶体管和P沟道晶体管的源极/漏极接触不同的自杀,以提供低电阻触点。 选择硅化物以提供工作功能的良好匹配。 P沟道晶体管的P型源极/漏极触点具有接近5.2电子伏特的P功函数的硅化物,并且N沟道晶体管的N型源极/漏极触点具有接近于 4.1电子伏特的N工作功能。 这提供了在这些源极/漏极接触区域和相应的硅化物之间的界面处的较低电阻。 具有不同工作功能的这些自杀根据需要用植入物实现。 例如,对于N型源极/漏极触点和钴,钛或镍的母体金属,植入的材料是铂和/或铱。 对于P型,植入的材料是铒,钇,镝,钆,铪或钬。
    • 19. 发明申请
    • Method and system for fail-safe renaming of logical circuit identifiers for rerouted logical circuits in a data network
    • 用于数据网络中重新路由逻辑电路的逻辑电路标识符故障安全重命名的方法和系统
    • US20050238006A1
    • 2005-10-27
    • US10829495
    • 2004-04-22
    • William TaylorDavid MassengillJohn Hollingsworth
    • William TaylorDavid MassengillJohn Hollingsworth
    • H04L12/24H04L12/56
    • H04L45/28H04L41/0659H04L41/0806H04L45/02H04L49/557H04L2012/5627
    • A method and system are provided for fail-safe renaming of logical circuit identifiers for rerouted logical circuits in a data network. A network management module is provided for accessing a network device provisioned for routing data over a first logical circuit in the data network. The network management module is further utilized for deleting the first logical circuit in the network device upon detecting a failure in the first logical circuit and provisioning a second logical circuit in the network device for rerouting the data from the first logical circuit. In provisioning the second logical circuit, the network management module is utilized to assign a second logical circuit identifier to identify the second logical circuit. The network management module is further utilized for renaming a first logical circuit identifier to the second logical circuit identifier and renaming a logical circuit label for the first logical circuit in a logical element module in communication with the network management module. The renamed logical circuit label includes the first logical circuit identifier and may be utilized to indicate that the logical circuit data from the failed logical circuit has been rerouted.
    • 提供了一种用于故障安全重命名数据网络中重新路由的逻辑电路的逻辑电路标识符的方法和系统。 提供网络管理模块,用于访问被提供用于通过数据网络中的第一逻辑电路路由数据的网络设备。 网络管理模块进一步用于在检测到第一逻辑电路中的故障并且在网络设备中提供第二逻辑电路以便从第一逻辑电路重新路由数据时,删除网络设备中的第一逻辑电路。 在提供第二逻辑电路时,网络管理模块用于分配第二逻辑电路标识符以识别第二逻辑电路。 网络管理模块还用于将第一逻辑电路标识符重新命名为第二逻辑电路标识符,并且重新命名与网络管理模块通信的逻辑元件模块中的第一逻辑电路的逻辑电路标签。 重命名的逻辑电路标签包括第一逻辑电路标识符,并且可以用于指示来自故障逻辑电路的逻辑电路数据已被重新路由。