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11. 发明授权

US06770418B2 Positive resist compositions containing non-polymeric silicon 失效
标题翻译：含有非聚合硅的正性抗蚀剂组合物
公开(公告)号：US06770418B2
公开(公告)日：2004-08-03
申请号：US10026120
申请日：2001-12-21
申请人： Wenjie Li , Pushkara Rao Varanasi , Ranee Kwong
发明人： Wenjie Li , Pushkara Rao Varanasi , Ranee Kwong
IPC分类号： G03C173
CPC分类号： G03F7/0755 , G03F7/0045 , G03F7/0392 , Y10S430/106 , Y10S430/108 , Y10S430/111
摘要： Acid-catalyzed positive resist compositions suitable for bilayer or multilayer lithographic applications are enabled by the use of a combination of (a) an acid-sensitive imaging polymer, (b) a radiation-sensitive acid generator, and (c) a non-polymeric silicon additive. The imaging polymer is preferably imageable with 193 nm or shorter wavelength imaging radiation. The resist compositions preferably contain at least about 5 wt. % silicon based on the weight of the imaging polymer. The compositions generally provide reduced line edge roughness compared to conventional silicon-containing resists.
摘要翻译：通过使用（a）酸敏感成像聚合物，（b）辐射敏感酸产生剂和（c）非聚合物硅添加剂。成像聚合物优选可以用193nm或更短波长成像辐射成像。抗蚀剂组合物优选含有至少约5wt。基于成像聚合物重量的硅。与常规的含硅抗蚀剂相比，组合物通常提供较少的线边缘粗糙度。

12. 发明授权

US06696216B2 Thiophene-containing photo acid generators for photolithography 有权
标题翻译：含噻吩的光致酸发生剂用于光刻
公开(公告)号：US06696216B2
公开(公告)日：2004-02-24
申请号：US09896538
申请日：2001-06-29
申请人： Wenjie Li , Pushkara Rao Varanasi , Kuang-Jung Chen
发明人： Wenjie Li , Pushkara Rao Varanasi , Kuang-Jung Chen
IPC分类号： G03F7003
CPC分类号： C07C381/00 , C07C2603/74 , C07D333/34 , G03F7/0045 , G03F7/0382 , G03F7/0397 , Y10S430/122
摘要： Thiophene-containing photo acid generators having either of the following general formulas: wherein at least one of R1, R2 or R3 is thiophene or thiophene that is substituted with alkyl, alkoxy or cycloalkyl, and the remaining R1, R2 or R3, not containing a thiophene moiety, are independently selected from the group consisting of alkyl, cycloalkyl and aryl, or at least one of R1, R2 or R3 are joined together to form a cyclic moiety having from about 4 to about 8 ring carbon atoms; and Y is a counter ion, are disclosed as well as the use thereof as a component of a chemically amplified resist composition. In addition to the thiophene-containing photo acid generator, the inventive composition includes a chemically amplified base polymer, a solvent, an optional photosensitizer, an optional base, an optional dissolution modifying agent and an optional surfactant.
摘要翻译：含噻吩的光酸产生剂具有以下通式之一：其中R 1，R 2或R 3中的至少一个是被烷基，烷氧基或环烷基取代的噻吩或噻吩，剩余的 R 1，R 2或R 3不含噻吩部分，独立地选自烷基，环烷基和芳基，或R 1，R 2或 R 3连接在一起形成具有约4-约8个环碳原子的环状部分; 并且Y是抗衡离子，并且作为化学放大抗蚀剂组合物的组分的用途被公开。除了含噻吩的光酸产生剂之外，本发明的组合物还包括化学放大的基础聚合物，溶剂，任选的光敏剂，任选的碱，任选的溶解改性剂和任选的表面活性剂。

13. 发明授权

US07638264B2 Positive photoresist composition with a polymer including a fluorosulfonamide group and process for its use 失效
标题翻译：具有包含氟磺酰胺基团的聚合物的正性光致抗蚀剂组合物及其使用方法
公开(公告)号：US07638264B2
公开(公告)日：2009-12-29
申请号：US11438842
申请日：2006-05-23
申请人： Wenjie Li , Pushkara Rao Varanasi
发明人： Wenjie Li , Pushkara Rao Varanasi
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0397 , G03F7/0046 , Y10S430/106 , Y10S430/108 , Y10S430/111
摘要： A positive photoresist composition comprises a radiation sensitive acid generator, and a polymer that includes a first repeating unit derived from a sulfonamide monomer including a fluorosulfonamide functionality, a second repeating unit having a pendant acid-labile moiety, and a third repeating unit having a lactone functionality. The positive photoresist composition may be used to form patterned features on a substrate, such as those used in the manufacture of a semiconductor device.
摘要翻译：正性光致抗蚀剂组合物包含辐射敏感性酸产生剂和包含衍生自包含氟磺酰胺官能团的磺酰胺单体的第一重复单元的聚合物，具有侧酸不稳定部分的第二重复单元和具有内酯的第三重复单元功能。正光致抗蚀剂组合物可以用于在基底上形成图案化的特征，例如用于制造半导体器件的那些。

14. 发明申请

US20080233514A1 POSITIVE PHOTORESIST COMPOSITION WITH A POLYMER INCLUDING A FLUOROSULFONAMIDE GROUP AND PROCESS FOR ITS USE 有权
标题翻译：含聚氟乙烯的聚合物的正性光催化组合物及其使用方法
公开(公告)号：US20080233514A1
公开(公告)日：2008-09-25
申请号：US12136163
申请日：2008-06-10
申请人： Wenjie Li , Pushkara Rao Varanasi
发明人： Wenjie Li , Pushkara Rao Varanasi
IPC分类号： G03F7/004
CPC分类号： G03F7/0397 , G03F7/0046 , Y10S430/106 , Y10S430/108 , Y10S430/111
摘要： A positive photoresist composition comprises a radiation sensitive acid generator, and a polymer that includes a first repeating unit derived from a sulfonamide monomer including a fluorosulfonamide functionality, a second repeating unit having a pendant acid-labile moiety, and a third repeating unit having a lactone functionality. The positive photoresist composition may be used to form patterned features on a substrate, such as those used in the manufacture of a semiconductor device.
摘要翻译：正性光致抗蚀剂组合物包含辐射敏感性酸产生剂和包含衍生自包含氟磺酰胺官能团的磺酰胺单体的第一重复单元的聚合物，具有侧酸不稳定部分的第二重复单元和具有内酯的第三重复单元功能。正光致抗蚀剂组合物可以用于在基底上形成图案化的特征，例如用于制造半导体器件的那些。

15. 发明授权

US07217496B2 Fluorinated photoresist materials with improved etch resistant properties 有权
标题翻译：具有改善耐蚀性能的氟化光致抗蚀剂材料
公开(公告)号：US07217496B2
公开(公告)日：2007-05-15
申请号：US10988137
申请日：2004-11-12
申请人： Mahmoud Khojasteh , Pushkara Rao Varanasi , Wenjie Li , Kuang-Jung J Chen , Kaushal S. Patel
发明人： Mahmoud Khojasteh , Pushkara Rao Varanasi , Wenjie Li , Kuang-Jung J Chen , Kaushal S. Patel
IPC分类号： G03C1/73 , G03F7/038 , G03F7/039 , G03F7/20 , G03F7/30 , G03F7/36
CPC分类号： G03F7/0397 , C08F220/18 , C08F220/24 , C08F220/28 , G03F7/0046 , G03F7/0382 , Y10S430/108 , Y10S430/111 , Y10S430/122 , Y10S430/126
摘要： A photoresist composition including a polymer is disclosed, wherein the polymer includes at least one monomer having the formula: where R1 represents hydrogen (H), a linear, branched or cyclo alkyl group of 1 to 20 carbons, a semi- or perfluorinated linear, branched or cyclo alkyl group of 1 to 20 carbons or CN; R2 represents an alicyclic group of 5 or more carbon atoms; X represents a methylene, ether, ester, amide or carbonate linkage; R3 represents a linear or branched alkylene group or semi- or perfluorinated linear or branched alkylene group with 1 or more carbon atoms; R4 represents hydrogen (H), methyl (CH3), trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perflourinated aliphatic group; R5 represents trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group; n represents an integer of 1 or more; and OR12 represents OH or at least one acid labile group selected from a tertiary alkyl carbonate, a tertiary alkyl ester, a tertiary alkyl ether, an acetal and a ketal. A method of patterning a substrate is also disclosed, wherein the method includes: applying the photoresist composition mentioned above to the substrate to form a film; patternwise exposing the film to an imaging radiation source; and developing areas of the film to form a patterned substrate.
摘要翻译：公开了包含聚合物的光致抗蚀剂组合物，其中聚合物包括至少一种具有下式的单体：其中R 1表示氢（H），1至20个碳的直链，支链或环烷基，碳原子数为1〜20的半全氟化或全氟化的支链或环状烷基，CN; R 2表示5个以上碳原子的脂环基; X表示亚甲基，醚，酯，酰胺或碳酸酯键; R 3表示具有1个或更多个碳原子的直链或支链亚烷基或半或全氟化的直链或支链亚烷基; R 4表示氢（H），甲基（CH 3），三氟甲基（CF 3），二氟甲基（CHF 2）（CH 2 CH 2），或半或全氟化脂族基团; R 5表示三氟甲基（CF 3），二氟甲基（CH 2）2，氟甲基（CH 2 CH 2），氟甲基或半或全氟取代或未取代的脂族基团; n表示1以上的整数，和OR 12代表OH或选自叔碳酸烷基酯，叔烷基酯，叔烷基醚，缩醛和缩酮中的至少一种酸不稳定基团。还公开了一种图案化衬底的方法，其中该方法包括：将上述光致抗蚀剂组合物施加到衬底上以形成膜; 将膜图案化地曝光到成像辐射源; 和显影区域以形成图案化衬底。

16. 发明授权

US06949325B2 Negative resist composition with fluorosulfonamide-containing polymer 失效
标题翻译：含有氟磺酰胺的聚合物的负光刻胶组合物
公开(公告)号：US06949325B2
公开(公告)日：2005-09-27
申请号：US10663553
申请日：2003-09-16
申请人： Wenjie Li , Pushkara Rao Varanasi
发明人： Wenjie Li , Pushkara Rao Varanasi
IPC分类号： C08F14/18 , C08F214/18 , G03C1/675 , G03C1/73 , G03C5/00 , G03F7/038
CPC分类号： C09D133/14 , C08F214/18 , C08F220/28 , C08F220/38 , C08K5/0025 , C09D133/16 , C09D145/00 , G03F7/0046 , G03F7/0382 , Y10S430/107 , Y10S430/108 , Y10S430/128
摘要： A negative resist composition is disclosed, wherein the resist composition includes a polymer having at least one fluorosulfonamide monomer unit having one of the following two formulae: wherein: M is a polymerizable backbone moiety; Z is a linking moiety selected from the group consisting of —C(O)O—, —C(O)—, —OC(O)—, —O—C(O)—C(O)—O—, or alkyl; P is 0 or 1; R1 is a linear or branched alkyl group of 1 to 20 carbons; R2 is hydrogen, fluorine, a linear or branched alkyl group of 1 to 6 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 6 carbons; and n is an integer from 1 to 6. A method of forming a patterned material layer on a substrate is also disclosed, wherein the method includes applying the fluorosulfonamide-containing resist composition to the substrate to form a resist layer on the material layer; patternwise exposing the resist layer to imaging radiation; removing portions of the resist layer not exposed to the imaging radiation to create spaces in the resist layer corresponding to the pattern; and removing portions of the material layer at the spaces formed in the resist layer, thereby forming a patterned material layer.
摘要翻译：公开了一种负型抗蚀剂组合物，其中抗蚀剂组合物包括具有至少一个具有以下两个式之一的氟磺酰胺单体单元的聚合物：其中：M是可聚合主链部分; Z是选自-C（O）O-，-C（O） - ， - OC（O） - ， - O-C（O）-C（O）-O-或烷基的连接部分。 P为0或1; R 1是具有1至20个碳的直链或支链烷基; R 2是氢，氟，1至6个碳的直链或支链烷基，或1至6个碳的半或全氟化直链或支链烷基; 并且n是1至6的整数。还公开了在基板上形成图案化材料层的方法，其中所述方法包括将含氟磺酰胺的抗蚀剂组合物施加到所述基材上以在所述材料层上形成抗蚀剂层; 将抗蚀剂层图案化地曝光到成像辐射; 除去未暴露于成像辐射的抗蚀剂层的部分，以在对应于图案的抗蚀剂层中产生空间; 并且在形成在抗蚀剂层中的空间处去除材料层的部分，从而形成图案化材料层。

17. 发明授权

US06635401B2 Resist compositions with polymers having 2-cyano acrylic monomer 有权
标题翻译：具有2-氰基丙烯酸单体的聚合物的抗蚀剂组合物
公开(公告)号：US06635401B2
公开(公告)日：2003-10-21
申请号：US09886428
申请日：2001-06-21
申请人： Wenjie Li , Pushkara Rao Varanasi
发明人： Wenjie Li , Pushkara Rao Varanasi
IPC分类号： G03F7038
CPC分类号： G03F7/0395 , G03F7/0397
摘要： Acid-catalyzed positive resist compositions which are imageable with 193 nm radiation and/or possibly other radiation and are developable to form resist structures of improved development characteristics and improved etch resistance are enabled by the use of resist compositions containing imaging polymer having a 2-cyano acrylic monomer.
摘要翻译：可以通过193nm辐射和/或可能的其它辐射成像并且可显影以形成改善的显影特性和改善的耐蚀刻性的抗蚀剂结构的酸催化的正性抗蚀剂组合物通过使用含有具有2-氰基的成像聚合物的抗蚀剂组合物丙烯酸单体。

18. 发明申请

US20090155715A1 PHOTORESIST COMPOSITIONS AND METHOD FOR MULTIPLE EXPOSURES WITH MULTIPLE LAYER RESIST SYSTEMS 有权
标题翻译：多层耐蚀系统多光照的组合物和方法
公开(公告)号：US20090155715A1
公开(公告)日：2009-06-18
申请号：US12356187
申请日：2009-01-20
申请人： Kuang-Jung Chen , Wu-Song Huang , Wai-Kin Li , Pushkara Rao Varanasi , Sen Liu
发明人： Kuang-Jung Chen , Wu-Song Huang , Wai-Kin Li , Pushkara Rao Varanasi , Sen Liu
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/0045 , G03F7/0035 , G03F7/0397 , G03F7/40
摘要： A method and a resist composition. The resist composition includes a polymer having repeating units having a lactone moiety, a thermal base generator capable of generating a base and a photosensitive acid generator. The polymer has the properties of being substantially soluble in a first solvent and becoming substantially insoluble after heating the polymer. The method includes forming a film of a photoresist including a polymer, a thermal base generator capable of releasing a base, a photosensitive acid generator, and a solvent. The film is patternwise imaged. The imaging includes exposing the film to radiation, resulting in producing an acid catalyst. The film is developed in an aqueous base, resulting in removing base-soluble regions and forming a patterned layer. The patterned layer is baked above the temperature, resulting in the thermal base generator releasing a base within the patterned layer and the patterned layer becoming insoluble in the solvent.
摘要翻译：一种方法和抗蚀剂组合物。抗蚀剂组合物包括具有内酯部分的重复单元的聚合物，能够产生碱的热碱发生剂和感光酸产生剂。聚合物具有基本上可溶于第一溶剂的性质，并且在加热聚合物之后变得基本上不溶。该方法包括形成包含聚合物的光致抗蚀剂膜，能够释放碱的热碱发生器，光敏酸产生剂和溶剂。该影片被图案化成像。成像包括将膜暴露于辐射，导致产生酸催化剂。该膜在水性碱中显影，导致去除碱溶性区域并形成图案层。图案化层被烘烤高于该温度，导致热基发生器释放图案化层内的基底并且图案化层变得不溶于溶剂。

19. 发明申请

US20090143611A1 Hexafluoroalcohol-based Monomers and Processes of Preparation Thereof 审中-公开
标题翻译：六氟乙醇基单体及其制备方法
公开(公告)号：US20090143611A1
公开(公告)日：2009-06-04
申请号：US11719138
申请日：2005-11-14
申请人： Shahrokh Motallebi , Denis Desilets , Ian Marcotte , Luc Bouchard , Khalil Feghali , Pushkara Rao Varanasi , Mahmoud Khojasteh
发明人： Shahrokh Motallebi , Denis Desilets , Ian Marcotte , Luc Bouchard , Khalil Feghali , Pushkara Rao Varanasi , Mahmoud Khojasteh
IPC分类号： C07C69/74
CPC分类号： G03F7/0046 , C07C69/757 , C07C2602/42 , G03F7/0397
摘要： The present invention relates to compounds of formula (I): wherein R1 is H, or a C1-C10 linear, branched or cyclic alkyl group which is unsubstituted or substituted with fluorine; R2 is an alicyclic group having 5 to 20 carbon atoms which is unsubstituted or substituted with fluorine; and R3 represents a C1-C10 linear or branched alkylene which is unsubstituted or substituted with fluorine. Processes for preparing such compounds are also disclosed. The compounds of the present invention can be used as monomers in the fields of photolithography and semiconductor fabrication.
摘要翻译：本发明涉及式（I）化合物：其中R1是H，或未被取代或被氟取代的C1-C10直链，支链或环状烷基; R2是未取代或被氟取代的碳原子数为5〜20的脂环族基团; 并且R 3表示未被取代或被氟取代的C 1 -C 10直链或支链亚烷基。还公开了制备这些化合物的方法。本发明的化合物可以用作光刻和半导体制造领域中的单体。

20. 发明授权

US06770419B2 Low silicon-outgassing resist for bilayer lithography 失效
公开(公告)号：US06770419B2
公开(公告)日：2004-08-03
申请号：US10241937
申请日：2002-09-11
申请人： Mahmoud M. Khojasteh , Ranee W. Kwong , Kuang-Jung Chen , Pushkara Rao Varanasi , Robert D. Allen , Phillip Brock , Frances Houle , Ratnam Sooriyakumaran
发明人： Mahmoud M. Khojasteh , Ranee W. Kwong , Kuang-Jung Chen , Pushkara Rao Varanasi , Robert D. Allen , Phillip Brock , Frances Houle , Ratnam Sooriyakumaran
IPC分类号： G03C173
CPC分类号： G03F7/094 , G03F7/0397 , G03F7/0758 , Y10S430/106 , Y10S430/111 , Y10S430/115
摘要： The silicon-containing resist compositions which have low silicon outgassing and high resolution lithographic performance, especially in bilayer or multilayer lithographic applications using 193 nm or shorter wavelength imaging radiation are enabled by the presence of an imaging polymer having silicon-containing, non-acid-labile pendant groups. The resist compositions of the invention are preferably further characterized by the substantial absence of silicon-containing acid-labile moieties.

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