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11. 发明授权

US5629238A Method for forming conductive line of semiconductor device 失效
标题翻译：形成半导体器件导线的方法
公开(公告)号：US5629238A
公开(公告)日：1997-05-13
申请号：US557534
申请日：1995-11-14
申请人： Ji-hyun Choi , Hong-jae Shin , Byung-keun Hwang , U-in Chung
发明人： Ji-hyun Choi , Hong-jae Shin , Byung-keun Hwang , U-in Chung
IPC分类号： H01L21/3205 , H01L21/316 , H01L21/768 , H01L23/522 , H01L21/283
CPC分类号： H01L21/76831 , H01L21/76877
摘要： A method for forming a conductive line uses a fluorine doped oxide layer as an insulating layer between conductive lines. The method comprises the steps of: (a) forming a fluorine doped oxide layer on a semiconductor substrate on which a lower structure is formed; (b) etching the oxide layer of the region where a conductive line is to be formed, thereby forming a trench; (c) forming an insulating layer on the overall surface of the resultant substrate; depositing conductive material on the resultant substrate; and (e) etching back the conductive material so that the conductive material is left on the trench only, thereby forming a conductive line. In this method, the conductive line is formed of aluminum-containing material and the insulating layer is formed of silicon dioxide. In the present invention, the insulating layer is interposed between the fluorine doped oxide layer and the aluminum-containing conductive line and thus the conductive line is free from corrosion.
摘要翻译：形成导线的方法使用氟掺杂氧化物层作为导线之间的绝缘层。该方法包括以下步骤：（a）在形成下部结构的半导体衬底上形成氟掺杂氧化物层; （b）蚀刻要形成导电线的区域的氧化物层，从而形成沟槽; （c）在所得基板的整个表面上形成绝缘层; 在所得基板上沉积导电材料; 和（e）蚀刻导电材料，使得导电材料仅留在沟槽上，从而形成导电线。在该方法中，导电线由含铝材料形成，绝缘层由二氧化硅形成。在本发明中，绝缘层介于氟掺杂氧化物层和含铝导电线之间，因此导电线无腐蚀。

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