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11. 发明授权

US08021987B2 Method of modifying insulating film 有权
标题翻译：绝缘膜改性方法
公开(公告)号：US08021987B2
公开(公告)日：2011-09-20
申请号：US12632131
申请日：2009-12-07
申请人： Takuya Sugawara , Yoshihide Tada , Genji Nakamura , Shigenori Ozaki , Toshio Nakanishi , Masaru Sasaki , Seiji Matsuyama , Kazuhide Hasebe , Shigeru Nakajima , Tomonori Fujiwara
发明人： Takuya Sugawara , Yoshihide Tada , Genji Nakamura , Shigenori Ozaki , Toshio Nakanishi , Masaru Sasaki , Seiji Matsuyama , Kazuhide Hasebe , Shigeru Nakajima , Tomonori Fujiwara
IPC分类号： H01L21/38 , H01L21/469
CPC分类号： H01L21/02112 , H01L21/0234 , H01L21/28176 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28211 , H01L21/3144 , H01L21/31658 , H01L29/518 , H01L29/78
摘要： An insulting film is modified by subjecting the insulting film to a modification treatment comprising a combination of a plasma treatment and a thermal annealing treatment. There is provided a method of enhancing the characteristic of an insulating film by improving deterioration in the characteristic of the insulating film due to carbon, a suboxide, a dangling bond or the like contained in the insulating film.
摘要翻译：通过对绝缘膜进行包括等离子体处理和热退火处理的组合的改性处理来修饰绝缘膜。通过改善绝缘膜中所含的碳，低氧化物，悬挂键等导致的绝缘膜的特性劣化，提供了提高绝缘膜特性的方法。

12. 发明授权

US07981785B2 Method for manufacturing semiconductor device and plasma oxidation method 失效
标题翻译：制造半导体器件和等离子体氧化法的方法
公开(公告)号：US07981785B2
公开(公告)日：2011-07-19
申请号：US10591343
申请日：2004-03-01
申请人： Masaru Sasaki , Yoshiro Kabe
发明人： Masaru Sasaki , Yoshiro Kabe
IPC分类号： H01L27/088 , H01L29/768
CPC分类号： H01L21/28247 , H01L21/0223 , H01L21/02238 , H01L21/02252 , H01L21/28061 , H01L21/31662 , H01L29/4941
摘要： A polysilicon electrode layer (103) (a first electrode layer) is formed by forming a polysilicon film on a gate oxide film (102) on a silicon wafer (101). A tungsten layer (105) (a second electrode layer) is formed on this polysilicon electrode layer (103). In addition, a barrier layer (104) is formed on the polysilicon electrode layer (103) before the formation of the tungsten layer (105). Etching is then conducted using a silicon nitride layer (106) as the etching mask. Next, an oxide insulating film (107) is formed on an exposed surface of the polysilicon layer (103) by plasma oxidation wherein a process gas containing oxygen gas and hydrogen gas is used at a process temperature not less than 300° C. With this method, a selective oxidation of the polysilicon electrode layer (103) can be carried out without oxidizing the tungsten layer (105).
摘要翻译：通过在硅晶片（101）上的栅极氧化膜（102）上形成多晶硅膜来形成多晶硅电极层（第一电极层）（第一电极层）。在该多晶硅电极层（103）上形成钨层（105）（第二电极层）。此外，在形成钨层（105）之前，在多晶硅电极层（103）上形成阻挡层（104）。然后使用氮化硅层（106）作为蚀刻掩模进行蚀刻。接下来，通过等离子体氧化在多晶硅层（103）的露出表面上形成氧化物绝缘膜（107），其中在不低于300℃的工艺温度下使用含有氧气和氢气的工艺气体。这样可以在不氧化钨层（105）的情况下进行多晶硅电极层（103）的选择性氧化。

13. 发明授权

US07897009B2 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US07897009B2
公开(公告)日：2011-03-01
申请号：US11722017
申请日：2005-12-16
申请人： Masaru Sasaki
发明人： Masaru Sasaki
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32495 , C23C16/4404 , C23C16/511 , H01J37/32192 , H01L21/0223 , H01L21/02252 , H01L21/31662
摘要： A plasma processing apparatus (100) includes a plasma generation mechanism; a process container defining a process chamber configured to perform a plasma process on a target substrate; a substrate worktable configured to place the target substrate thereon inside the process container; and an exhaust mechanism configured to decrease pressure inside the process container. A wall (27a) of a support portion (27) for supporting a microwave transmission plate (28) is present in an area having an electron temperature of 1.5 eV or more during plasma generation. A covering portion (60) made of a heat resistant insulator, such as quartz, is disposed to cover the wall (27a).
摘要翻译：等离子体处理装置（100）包括等离子体产生机构; 定义处理室的处理容器，其被配置为在目标衬底上执行等离子体处理; 基板工作台，其构造成将所述目标基板放置在所述处理容器内; 以及排气机构，其构造成减小处理容器内部的压力。用于支撑微波透射板（28）的支撑部分（27）的壁（27a）存在于等离子体产生期间电子温度为1.5eV或更高的区域中。由诸如石英的耐热绝缘体制成的覆盖部分（60）被设置成覆盖壁（27a）。

14. 发明授权

US07826137B2 Reflective optical circulator 有权
标题翻译：反光光环行器
公开(公告)号：US07826137B2
公开(公告)日：2010-11-02
申请号：US12281901
申请日：2007-03-08
申请人： Yoshihiro Konno , Masaru Sasaki
发明人： Yoshihiro Konno , Masaru Sasaki
IPC分类号： G02B5/30 , G02B27/28
CPC分类号： G02B27/286 , G02B6/2746 , G02B6/2793 , G02F1/093
摘要： Provided is a reflective optical circulator capable of improving characteristics by preventing the occurrence of PDL and non-uniformity of insertion losses of reciprocating optical paths. The reflective optical circulator includes: an optical element unit having a first polarization separating element, a 45° non-reciprocal polarization plane rotating element, a phase element for rotating a polarization plane of an incident light by 90°, and a second polarization separating element; a light incidence/emission unit; a lens; and a reflector. All waveguides are disposed at an equivalent distance from a central point, and a shift amount of an extraordinary ray in the second polarization separating element is set to be larger than a shift amount of an extraordinary ray in the first polarization separating element. In addition, the phase element is constructed with two phase optical elements, and only one polarization component is allowed to transmit through the two phase optical elements.
摘要翻译：提供了能够通过防止PDL的发生和往复光路的插入损失的不均匀性而改善特性的反射式光循环器。反射式光循环器包括：具有第一偏振分离元件的光学元件单元，45°的非倒数偏振面旋转元件，将入射光的偏振面旋转90°的相位元件和第二偏振分离元件 ; 光入射/发射单元; 镜头和反射器。所有波导设置在与中心点相当的距离处，并且第二偏振分离元件中的非凡光线的偏移量被设定为大于第一偏振光分离元件中的异常光线的偏移量。此外，相位元件由两个相位光学元件构成，并且仅允许一个偏振分量通过两相光学元件透射。

15. 发明申请

US20100096707A1 Method for Forming Insulation Film 审中-公开
标题翻译：绝缘膜成型方法
公开(公告)号：US20100096707A1
公开(公告)日：2010-04-22
申请号：US12647902
申请日：2009-12-28
申请人： Takuya Sugawara , Yoshihide Tada , Genji Nakamura , Shigenori Ozaki , Toshio Nakanishi , Masaru Sasaki , Seiji Matsuyama
发明人： Takuya Sugawara , Yoshihide Tada , Genji Nakamura , Shigenori Ozaki , Toshio Nakanishi , Masaru Sasaki , Seiji Matsuyama
IPC分类号： H01L29/78 , H01L21/28
CPC分类号： H01L21/022 , H01L21/0214 , H01L21/02164 , H01L21/02326 , H01L21/02329 , H01L21/0234 , H01L21/3105 , H01L21/3165 , H01L21/3185 , Y10T428/12736 , Y10T428/12806
摘要： In a process involving the formation of an insulating film on a substrate for an electronic device, the insulating film is formed on the substrate surface by carrying out two or more steps for regulating the characteristic of the insulating film involved in the process under the same operation principle. The formation of an insulating film having a high level of cleanness can be realized by carrying out treatment such as cleaning, oxidation, nitriding, and a film thickness reduction while avoiding exposure to the air. Further, carrying out various steps regarding the formation of an insulating film under the same operation principle can realize simplification of the form of an apparatus and can form an insulating film having excellent property with a high efficiency.
摘要翻译：在涉及在电子器件用基板上形成绝缘膜的工序中，通过进行两个以上的工序来形成绝缘膜，该步骤用于调整在同一操作中涉及的绝缘膜的特性原理。通过进行诸如清洁，氧化，氮化和薄膜厚度减少的处理，同时避免暴露在空气中，可以实现具有高清洁度的绝缘膜的形成。此外，在相同的工作原理下进行关于形成绝缘膜的各种步骤可以实现设备形式的简化，并且可以以高效率形成具有优异性能的绝缘膜。

16. 发明申请

US20080142159A1 Plasma Processing Apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US20080142159A1
公开(公告)日：2008-06-19
申请号：US11722017
申请日：2005-12-16
申请人： Masaru Sasaki
发明人： Masaru Sasaki
IPC分类号： H01L21/306
CPC分类号： H01J37/32495 , C23C16/4404 , C23C16/511 , H01J37/32192 , H01L21/0223 , H01L21/02252 , H01L21/31662
摘要： A plasma processing apparatus (100) includes a plasma generation mechanism; a process container defining a process chamber configured to perform a plasma process on a target substrate; a substrate worktable configured to place the target substrate thereon inside the process container; and an exhaust mechanism configured to decrease pressure inside the process container. A wall (27a) of a support portion (27) for supporting a microwave transmission plate (28) is present in an area having an electron temperature of 1.5 eV or more during plasma generation. A covering portion (60) made of a heat resistant insulator, such as quartz, is disposed to cover the wall (27a).
摘要翻译：等离子体处理装置（100）包括等离子体产生机构; 定义处理室的处理容器，其被配置为在目标衬底上执行等离子体处理; 基板工作台，其构造成将所述目标基板放置在所述处理容器内; 以及排气机构，其构造成减小处理容器内部的压力。在等离子体产生期间，在电子温度为1.5eV以上的区域中存在用于支撑微波透射板（28）的支撑部（27）的壁（27a）。由诸如石英的耐热绝缘体制成的覆盖部分（60）被设置成覆盖壁（27a）。

17. 发明授权

US07318662B2 Vehicular headlamp 有权
标题翻译：车载大灯
公开(公告)号：US07318662B2
公开(公告)日：2008-01-15
申请号：US11096458
申请日：2005-04-01
申请人： Hitoshi Takeda , Masaru Sasaki , Masayasu Ito
发明人： Hitoshi Takeda , Masaru Sasaki , Masayasu Ito
IPC分类号： F21V33/00
CPC分类号： B60Q1/04 , B60Q1/14 , F21S41/147 , F21S41/155 , F21S41/663 , F21Y2115/10
摘要： A vehicular head lamp includes a first light source module having a plurality of semiconductor light emitting elements and a second light source module connected in series to the first light source module, having semiconductor light emitting elements the number of which is smaller than that of the first light source module and generating the light of brightness higher than that of the first light source module when an electric current substantially equal to that of the first light source module is supplied.
摘要翻译：一种车用头灯，具有：第一光源模块，具有多个半导体发光元件和与该第一光源模块串联连接的第二光源模块，该半导体发光元件的数量小于第一光源模块的第一光源模块，并且当提供与第一光源模块的电流基本相等的电流时，产生亮度高于第一光源模块的亮度的光。

18. 发明申请

US20070204959A1 SUBSTRATE PROCESSING METHOD AND MATERIAL FOR ELECTRONIC DEVICE 审中-公开
标题翻译：电子设备的基板处理方法和材料
公开(公告)号：US20070204959A1
公开(公告)日：2007-09-06
申请号：US11747289
申请日：2007-05-11
申请人： Toshio NAKANISHI , Takuya Sugawara , Seiji Matsuyama , Masaru Sasaki
发明人： Toshio NAKANISHI , Takuya Sugawara , Seiji Matsuyama , Masaru Sasaki
IPC分类号： H01L21/3065
CPC分类号： H01L21/28185 , H01L21/0217 , H01L21/02247 , H01L21/02332 , H01L21/0234 , H01L21/2236 , H01L21/28202 , H01L21/3003 , H01L21/3144 , H01L21/3185 , H01L29/513 , H01L29/518
摘要： A method of processing a for an electronic device, comprising, at least: a nitridation step (a) of supplying nitrogen radicals on the surface of the electronic device substrate, to thereby form a nitride film on the surface thereof; and a hydrogenation step (b) of supplying hydrogen radicals to the surface of the electronic device substrate. By use of this method, it is possible to recover the degradation in the electric property of an insulating film due to a turnaround phenomenon which can occur at the time of nitriding an Si substrate, etc.
摘要翻译：一种电子设备的处理方法，至少包括：在电子器件基板的表面上提供氮自由基的氮化步骤（a），从而在其表面上形成氮化物膜; 以及将氢自由基供给到电子器件基板的表面的氢化步骤（b）。通过使用该方法，由于在Si衬底等的氮化时可能发生的周转现象，可以恢复绝缘膜的电性能的劣化。

19. 发明授权

US07226848B2 Substrate treating method and production method for semiconductor device 失效
标题翻译：半导体器件的基板处理方法及其制造方法
公开(公告)号：US07226848B2
公开(公告)日：2007-06-05
申请号：US10500214
申请日：2002-12-25
申请人： Takuya Sugawara , Seiji Matsuyama , Masaru Sasaki
发明人： Takuya Sugawara , Seiji Matsuyama , Masaru Sasaki
IPC分类号： H01L21/322
CPC分类号： H01L21/28194 , H01L21/28176 , H01L21/28202 , H01L21/3003 , H01L27/10873 , H01L29/518
摘要： A method of hydrogen sintering a substrate including a semiconductor device formed thereon comprises the steps of exciting a processing gas comprising a noble gas and a hydrogen gas to form a plasma comprising hydrogen radicals and hydrogen ions, and exposing the substrate to the plasma. A preferred method comprises forming a gate insulation film on a substrate, forming a polysilicon electrode on the gate insulation film, and exposing the polysilicon electrode to an atmosphere comprising hydrogen radicals and hydrogen ions.
摘要翻译：一种氢烧结包括形成在其上的半导体器件的衬底的方法包括以下步骤：激发包括惰性气体和氢气的处理气体，以形成包含氢自由基和氢离子的等离子体，并将衬底暴露于等离子体。优选的方法包括在衬底上形成栅极绝缘膜，在栅极绝缘膜上形成多晶硅电极，并将多晶硅电极暴露于包含氢自由基和氢离子的气氛中。

20. 发明申请

US20060154492A1 Forming method of low dielectric constant insulating film of semiconductor device, semiconductor device, and low dielectric constant insulating film forming apparatus 审中-公开
标题翻译：半导体器件，半导体器件和低介电常数绝缘膜形成设备的低介电常数绝缘膜的形成方法
公开(公告)号：US20060154492A1
公开(公告)日：2006-07-13
申请号：US11322318
申请日：2006-01-03
申请人： Shinji Ide , Masaru Sasaki , Satohiko Hoshino
发明人： Shinji Ide , Masaru Sasaki , Satohiko Hoshino
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/02137 , H01L21/02203 , H01L21/02282 , H01L21/0234 , H01L21/3124
摘要： It is an object of the present invention to cure an insulating film of a semiconductor device in a short time while keeping a low dielectric constant. In the present invention, a coating film made of porous MSQ is formed on a substrate, the substrate on which the porous MSQ is formed is placed in a vacuum vessel, and high-density plasma processing at a low electron temperature based on microwave excitation is applied to the coating film by using a plasma substrate processing apparatus, thereby causing an intermolecular dehydration-condensation reaction of hydroxyls in a molecule and another molecule included in the porous MSQ to bond the molecules together, so that a cured insulating film is generated while a low dielectric constant is maintained.
摘要翻译：本发明的目的是在保持低介电常数的同时在短时间内固化半导体器件的绝缘膜。在本发明中，在基板上形成由多孔MSQ制成的涂膜，将形成有多孔质子MSQ的基板放置在真空容器中，基于微波激发的低电子温度的高密度等离子体处理为通过使用等离子体基板处理装置施加到涂膜，从而使分子中的羟基和多孔MSQ中包含的另一个分子的分子间脱水缩合反应将分子结合在一起，从而产生固化的绝缘膜，同时维持低介电常数。

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