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11. 发明授权

US08299490B2 Nitride-based semiconductor device having electrode on m-plane 有权
标题翻译：在m面上具有电极的氮化物半导体器件
公开(公告)号：US08299490B2
公开(公告)日：2012-10-30
申请号：US13167026
申请日：2011-06-23
申请人： Mitsuaki Oya , Toshiya Yokogawa , Atsushi Yamada , Akihiro Isozaki
发明人： Mitsuaki Oya , Toshiya Yokogawa , Atsushi Yamada , Akihiro Isozaki
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L33/32 , H01S5/0425 , H01S5/3202 , H01S5/32341
摘要： A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10; and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes an Mg layer 32 and an Ag layer 34 provided on the Mg layer 32. The Mg layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.
摘要翻译：氮化物系半导体发光装置100具备：具有m面面12的GaN衬底10; 设置在GaN衬底10的m面表面12上的半导体多层结构20; 以及设置在半导体层叠结构体20上的电极30.电极30包括设置在Mg层32上的Mg层32和Ag层34.Mg层32与p型半导体区域的表面接触半导体多层结构20。

12. 发明申请

US20130126902A1 SEMICONDUCTOR LIGHT EMITTING ELEMENT 有权
标题翻译：半导体发光元件
公开(公告)号：US20130126902A1
公开(公告)日：2013-05-23
申请号：US13813792
申请日：2011-08-05
申请人： Akihiro Isozaki , Akira Inoue , Atsushi Yamada , Toshiya Yokogawa
发明人： Akihiro Isozaki , Akira Inoue , Atsushi Yamada , Toshiya Yokogawa
IPC分类号： H01L33/32
CPC分类号： H01L33/32 , H01L33/0079 , H01L33/16 , H01L33/20 , H01L2933/0083
摘要： A semiconductor light-emitting element according to the present invention includes: an n-type nitride semiconductor layer 21; a p-type nitride semiconductor layer 23; an active layer region 22 which includes an m plane nitride semiconductor layer and which is interposed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer; an n-type electrode 30 which is electrically connected to the n-type nitride semiconductor layer; a p-type electrode 40 which is electrically connected to the p-type nitride semiconductor layer; a light-emitting face, through which polarized light that has been produced in the active layer region is extracted out of this element; and a striped structure 50 which is provided for the light-emitting face and which has a plurality of projections that run substantially parallel to the a-axis direction of the m plane nitride semiconductor layer.
摘要翻译：根据本发明的半导体发光元件包括：n型氮化物半导体层21; p型氮化物半导体层23; 包括m面氮化物半导体层并且介于n型氮化物半导体层和p型氮化物半导体层之间的有源层区域22; 与n型氮化物半导体层电连接的n型电极30; 与p型氮化物半导体层电连接的p型电极40; 从该元件中提取出在有源层区域中产生的偏振光的发光面; 以及条形结构50，其被设置用于发光面，并且具有大致平行于m面氮化物半导体层的a轴方向延伸的多个突起。

13. 发明授权

US09252330B2 Semiconductor light emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：US09252330B2
公开(公告)日：2016-02-02
申请号：US13813792
申请日：2011-08-05
申请人： Akihiro Isozaki , Akira Inoue , Atsushi Yamada , Toshiya Yokogawa
发明人： Akihiro Isozaki , Akira Inoue , Atsushi Yamada , Toshiya Yokogawa
IPC分类号： H01L33/32 , H01L33/16 , H01L33/20 , H01L33/00
CPC分类号： H01L33/32 , H01L33/0079 , H01L33/16 , H01L33/20 , H01L2933/0083
摘要： A semiconductor light-emitting element according to the present invention includes: an n-type nitride semiconductor layer 21; a p-type nitride semiconductor layer 23; an active layer region 22 which includes an m plane nitride semiconductor layer and which is interposed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer; an n-type electrode 30 which is electrically connected to the n-type nitride semiconductor layer; a p-type electrode 40 which is electrically connected to the p-type nitride semiconductor layer; a light-emitting face, through which polarized light that has been produced in the active layer region is extracted out of this element; and a striped structure 50 which is provided for the light-emitting face and which has a plurality of projections that run substantially parallel to the a-axis direction of the m plane nitride semiconductor layer.
摘要翻译：根据本发明的半导体发光元件包括：n型氮化物半导体层21; p型氮化物半导体层23; 包括m面氮化物半导体层并且介于n型氮化物半导体层和p型氮化物半导体层之间的有源层区域22; 与n型氮化物半导体层电连接的n型电极30; 与p型氮化物半导体层电连接的p型电极40; 从该元件中提取出在有源层区域中产生的偏振光的发光面; 以及条形结构50，其被设置用于发光面，并且具有大致平行于m面氮化物半导体层的a轴方向延伸的多个突起。

14. 发明申请

US20130126901A1 SEMICONDUCTOR LIGHT-EMITTING ELEMENT 审中-公开
标题翻译：半导体发光元件
公开(公告)号：US20130126901A1
公开(公告)日：2013-05-23
申请号：US13813777
申请日：2011-08-05
申请人： Akihiro Isozaki , Akira Inoue , Atsushi Yamada , Toshiya Yokogawa
发明人： Akihiro Isozaki , Akira Inoue , Atsushi Yamada , Toshiya Yokogawa
IPC分类号： H01L33/32
CPC分类号： H01L33/32 , H01L33/0079 , H01L33/16 , H01L33/20 , H01L2933/0083
摘要： A semiconductor light-emitting element according to the present invention includes: an n-type nitride semiconductor layer 21; a p-type nitride semiconductor layer 23; an active layer region 22 which includes an m-plane nitride semiconductor layer and which is interposed between the n- and p-type nitride semiconductor layers; an n-type electrode 30 which is electrically connected to the n-type nitride semiconductor layer; a p-type electrode 40 which is electrically connected to the p-type nitride semiconductor layer; a light-emitting face, through which polarized light that has been produced in the active layer region is extracted out of this element; and a striped structure 50 which is provided for the light-emitting face and which has a plurality of projections that run in a direction that defines either an angle of 5 degrees to 80 degrees or an angle of −80 degrees to −5 degrees with respect to the a-axis direction of the m-plane nitride semiconductor layer.
摘要翻译：根据本发明的半导体发光元件包括：n型氮化物半导体层21; p型氮化物半导体层23; 包括m面氮化物半导体层并且介于n型和p型氮化物半导体层之间的有源层区22。与n型氮化物半导体层电连接的n型电极30; 与p型氮化物半导体层电连接的p型电极40; 从该元件中提取出在有源层区域中产生的偏振光的发光面; 以及条形结构50，其被设置用于发光面，并且具有多个突起，该多个突起在限定5度至80度的角度或-80度至-5度的角度的方向上延伸，相对于相对于m面氮化物半导体层的a轴方向。

15. 发明授权

US06752129B2 Fuel supply module mounting structure for fuel tank 失效
标题翻译：燃油箱供油模块安装结构
公开(公告)号：US06752129B2
公开(公告)日：2004-06-22
申请号：US10310830
申请日：2002-12-06
申请人： Akihiro Isozaki , Hiroki Isobe
发明人： Akihiro Isozaki , Hiroki Isobe
IPC分类号： F02M3704
CPC分类号： F02M37/103
摘要： A fuel supply module mounting structure for a fuel tank (1) is disclosed having a fuel tank module (6) comprised of a tilting mechanism (TM) disposed between an upper plate (5) and a case (8,30) and operative to cause the case to be tilted in a direction away from a valve (20) in response to vertically upward movement of the case in a value beyond a given amount of stroke upon abutting engagement of the case with a bottom wall portion (3) of the fuel tank, avoiding interference between the valve (20) and a pump (9) contained in the case (8,30).
摘要翻译：公开了一种用于燃料箱（1）的燃料供应模块安装结构，其具有燃料箱模块（6），该燃料箱模块（6）包括设置在上板（5）和壳体（8,30）之间的倾斜机构（TM）使得壳体在远离阀门（20）的方向上倾斜，以响应于壳体在与壳体的底壁部分（3）邻接接合时超过给定量的行程的情况下的壳体的垂直向上运动燃料箱，避免阀（20）和容纳在壳体（8,30）中的泵（9）之间的干涉。

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