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11. 发明授权

US06927158B2 Method of forming a semiconductor device with thermally conductive gas between wirings 失效
标题翻译：在布线之间形成具有导热气体的半导体器件的方法
公开(公告)号：US06927158B2
公开(公告)日：2005-08-09
申请号：US10646508
申请日：2003-08-22
申请人： Junichi Aoyama , Toshio Kobayashi
发明人： Junichi Aoyama , Toshio Kobayashi
IPC分类号： H01L21/312 , H01L21/316 , H01L21/318 , H01L21/768 , H01L23/522 , H01L21/4763
CPC分类号： H01L21/7682 , H01L21/76807 , H01L23/5221 , H01L23/5222 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a semiconductor device to have a gap between wirings formed on a substrate, which gap is filled with a gas having a thermal conductivity equal to or higher than three times that of air at zero degrees Celsius. In the method, the following steps are performed: (A) forming a wiring and a filling layer filled between wirings, on a substrate; (B) forming a gas permeable film on the wiring and the filling layer; (C) removing the filling layer through the gas permeable film so as to form a gap between the wirings; (D) filling a gas having a thermal conductivity equal to or higher than three times that of air at 0.degree. C. through the gas permeable film into the gap; and (E) forming a gas impermeable film on the gas permeable film.
摘要翻译：一种形成半导体器件的方法，其在衬底上形成的布线之间具有间隙，该间隙被填充有等于或高于零摄氏度的空气的热导率的气体。在该方法中，执行以下步骤：（A）在基板上形成布线和在布线之间填充的填充层; （B）在布线和填充层上形成透气膜; （C）通过透气膜去除填充层，以在布线之间形成间隙; （D）填充导热率等于或高于空气温度的3倍的气体的气体。 C.通过透气膜进入间隙; 和（E）在透气膜上形成不透气膜。

12. 发明授权

US06911691B2 Nonvolatile semiconductor memory device 失效
标题翻译：非易失性半导体存储器件
公开(公告)号：US06911691B2
公开(公告)日：2005-06-28
申请号：US10343393
申请日：2002-05-31
申请人： Hideto Tomiie , Toshio Terano , Toshio Kobayashi
发明人： Hideto Tomiie , Toshio Terano , Toshio Kobayashi
IPC分类号： H01L21/8247 , G11C16/04 , H01L21/28 , H01L27/10 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： H01L21/28282 , G11C16/0475 , H01L29/7923
摘要： To propose a new channel structure suitable for high efficiency source side injection, and provide a non-volatile semiconductor memory device and a charge injection method using the same. The non-volatile memory device includes a first conductivity type semiconductor substrate (SUB), a first conductivity type inversion layer-forming region (CH1), second conductivity type accumulation layer-forming regions (ACLa, ACL2b), second conductivity type regions (S/D1, S/D2), an insulating film (GD0) and a first conductive layer (CL) formed on the inversion layer-forming region (CH1). A charge accumulation film (GD) and a second conductive layer (WL) are stacked on an upper surface and side surface of the first conductive layer (CL), an exposure surface of the inversion layer-forming region (CH1), and an upper surface of the accumulation layer-forming regions (ACLa, ACLb) and the second conductivity type regions (S/D1, S/D2). The second conductive layer (WL) is connected to a word line and second conductivity type regions (S/D1, S/D2) are connected to bit lines (Bla, BLb).
摘要翻译：提出一种适用于高效率源侧注入的新型通道结构，并提供一种非易失性半导体存储器件及使用其的电荷注入方法。非易失性存储器件包括第一导电型半导体衬底（SUB），第一导电类型反型层形成区（CH 1），第二导电型蓄积层形成区（ACLa，ACL2b），第二导电类型在反转层形成区域（CH 1）上形成的区域（S / D 1，S / D 2），绝缘膜（GD 0）和第一导电层（CL）。电荷累积膜（GD）和第二导电层（WL）层叠在第一导电层（CL）的上表面和侧表面上，反型层形成区域（CH 1）的曝光表面和蓄积层形成区域（ACLa，ACLb）和第二导电类型区域（S / D 1，S / D 2）的上表面。第二导电层（WL）连接到字线，第二导电类型区域（S / D 1，S / D 2）连接到位线（Bla，BLb）。

13. 发明授权

US06885060B2 Non-volatile semiconductor memory device and process for fabricating the same 失效
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US06885060B2
公开(公告)日：2005-04-26
申请号：US10101191
申请日：2002-03-19
申请人： Kazumasa Nomoto , Toshio Kobayashi
发明人： Kazumasa Nomoto , Toshio Kobayashi
IPC分类号： H01L21/8247 , H01L21/8246 , H01L27/115 , H01L29/788 , H01L29/792 , H01L29/00
CPC分类号： H01L27/11568 , H01L27/115 , H01L29/792 , Y10S438/954
摘要： A non-volatile semiconductor memory device comprising a first conductive semiconductor having steps on a surface thereof, a second conductive semiconductor region formed on an upper portion and a bottom portion of each of the steps and being separated in a direction perpendicular to the main surface of the first conductive semiconductor to function as a source or a drain, a gate dielectric film containing therein charge storage means which is spatially discrete and being formed on the first conductive semiconductor so as to coat at least a sidewall of each of the steps, and a gate electrode formed on the gate dielectric film. Accordingly, there are provided a non-volatile semiconductor memory device which suffers almost no deterioration in the properties and can perform the operation of recording of 2 bits per unit memory device even when the size of the semiconductor memory device in the semiconductor substrate is scaled down, and a process for fabricating the non-volatile semiconductor memory device.
摘要翻译：一种非易失性半导体存储器件，包括在其表面上具有台阶的第一导电半导体区，形成在每个台阶的上部和底部上的第二导电半导体区域，并且沿垂直于主表面的方向分离用作源极或漏极的第一导电半导体，其中包含电荷存储装置的栅极电介质膜，空间上离散并形成在第一导电半导体上，以便涂覆至少每一个步骤的侧壁，以及栅电极形成在栅极电介质膜上。因此，提供了几乎不会劣化的性能的非易失性半导体存储器件，并且即使当半导体衬底中的半导体存储器件的尺寸缩小时也可以执行每单位存储器件的2位的记录操作，以及用于制造非易失性半导体存储器件的工艺。

14. 发明申请

US20050007034A1 Discharge power supply apparatus 有权
标题翻译：放电电源装置
公开(公告)号：US20050007034A1
公开(公告)日：2005-01-13
申请号：US10676974
申请日：2003-09-30
申请人： Toshio Kobayashi , Tetsuya Matsumoto , Tadashi Masuda , Hiroyuki Ikoshi , Kazuo Sakai , Kiyoshi Komatsu , Kiyomi Watanabe
发明人： Toshio Kobayashi , Tetsuya Matsumoto , Tadashi Masuda , Hiroyuki Ikoshi , Kazuo Sakai , Kiyoshi Komatsu , Kiyomi Watanabe
IPC分类号： H02M3/28 , H02M7/06 , H05B37/02
CPC分类号： H02M3/28 , H02M7/06
摘要： This discharge power supply apparatus is for supplying a D. C. voltage to a discharge load 6 and discharging the same. The discharge power supply apparatus includes an inverter circuit 2 that converts D. C. voltage to A. C. voltage; a transformer 3 having a primary winding 3a to which the A. C. voltage output by the inverter circuit 2 is supplied and a secondary winding 3b; a full-wave rectifier circuit 4 that has a plurality of diodes 4A to 4D and rectifies the A. C. voltage generated by the secondary winding 3b; and a trigger capacitor 7 connected in parallel to a part of the diodes of the full-wave rectifier circuit 4.
摘要翻译：该放电电源装置用于向放电负载6提供D.C电压并对其放电。放电电源装置包括将C.C.电压转换成A.C电压的反相电路2。变压器3，其具有供给由逆变器电路2输出的A.C电压的初级绕组3a和次级绕组3b; 全波整流电路4具有多个二极管4A〜4D，对由次级绕组3b产生的A.C电压进行整流; 以及与全波整流电路4的二极管的一部分并联连接的触发电容器7。

15. 发明授权

US06687099B2 Magnetic head with conductors formed on endlayers of a multilayer film having magnetic layer coercive force difference 失效
标题翻译：具有形成在具有磁性层矫顽力差的多层膜的端层上的导体的磁头
公开(公告)号：US06687099B2
公开(公告)日：2004-02-03
申请号：US10270120
申请日：2002-10-15
申请人： Ryoichi Nakatani , Masahiro Kitada , Naoki Koyama , Isamu Yuito , Hisashi Takano , Eijin Moriwaki , Mikio Suzuki , Masaaki Futamoto , Fumio Kugiya , Yoshibumi Matsuda , Kazuo Shiiki , Yoshinori Miyamura , Kyo Akagi , Takeshi Nakao , Hirotsugu Fukuoka , Takayuki Munemoto , Tokuho Takagaki , Toshio Kobayashi , Hideo Tanabe , Noboru Shimizu
发明人： Ryoichi Nakatani , Masahiro Kitada , Naoki Koyama , Isamu Yuito , Hisashi Takano , Eijin Moriwaki , Mikio Suzuki , Masaaki Futamoto , Fumio Kugiya , Yoshibumi Matsuda , Kazuo Shiiki , Yoshinori Miyamura , Kyo Akagi , Takeshi Nakao , Hirotsugu Fukuoka , Takayuki Munemoto , Tokuho Takagaki , Toshio Kobayashi , Hideo Tanabe , Noboru Shimizu
IPC分类号： G11B539
CPC分类号： G11B5/398 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B5/3929 , G11B5/3967 , G11B2005/0002 , G11B2005/0016 , G11B2005/3996 , H01F10/324 , H01F10/3254 , H01F10/3268 , H01L43/08 , Y10T29/49032 , Y10T29/49043 , Y10T29/49044 , Y10T29/49155
摘要： The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.
摘要翻译：磁阻效应元件是至少具有磁性层和抵抗磁性层的绝缘材料，半导体或反铁磁材料的中间层的多层结构，并且磁阻效应元件至少在相对的磁性层上形成端子，使得构成磁阻效应元件的所有磁性层基本上与磁记录介质的记录表面成直角相对。因此，能够极大地降低与磁记录介质的记录面对置的磁性层的面积，因此能够通过电流检测来自高密度记录磁记录介质的非常窄的区域的磁场穿透特性，穿过中间层。

16. 发明授权

US06662446B2 Method for manufacturing a torque converter 失效
标题翻译：变矩器制造方法
公开(公告)号：US06662446B2
公开(公告)日：2003-12-16
申请号：US10193203
申请日：2002-07-12
申请人： Shigeaki Yamanaka , Toshio Kobayashi
发明人： Shigeaki Yamanaka , Toshio Kobayashi
IPC分类号： B21K2500
CPC分类号： F16H41/28 , B23P15/00 , Y10T29/4933 , Y10T29/49885
摘要： A torque converter comprises an impeller shell, a pump impeller integrally formed with the impeller shell, a turbine runner, a stator, a front cover, and at least one of a flanged portion through which a driving power of an engine is transmitted and a ring gear for a starter. The flanged portion is formed on an outer peripheral portion of an outer hull that includes the impeller shell and the front cover. A pilot boss portion is disposed at an axial portion of the front cover and is adapted to be fitted to a crank shaft of the engine, and a sleeve-like oil pump driving shaft is disposed at an axial portion of the impeller shell and is adapted to drive an oil pump. The pilot boss portion is formed integrally with the front cover through a plastic working operation, and the flanged portion formed at a front portion of the outer periphery of the front cover is increased in thickness through a plastic working operation that forms the flanged portion as a lamination.
摘要翻译：变矩器包括叶轮壳体，与叶轮壳体一体形成的泵叶轮，涡轮机转子，定子，前盖以及发动机的驱动力通过该法兰部分传递的凸缘部分和环起动器齿轮。凸缘部分形成在包括叶轮壳体和前盖的外壳的外周部分上。导向凸台部分设置在前盖的轴向部分处，适于装配到发动机的曲轴上，套筒状的油泵驱动轴设置在叶轮壳体的轴向部分，并适于驱油泵。导向凸台部分通过塑性加工操作与前盖一体地形成，并且形成在前盖的外周的前部的凸缘部分的厚度通过形成凸缘部分的塑性加工操作而增加，作为层压。

17. 发明授权

US06538844B2 Method of fabricating a magnetic head by focused ion beam etching 失效
标题翻译：通过聚焦离子束蚀刻制造磁头的方法
公开(公告)号：US06538844B2
公开(公告)日：2003-03-25
申请号：US10083104
申请日：2002-02-27
申请人： Hisashi Takano , Naoki Koyama , Hideo Tanabe , Eijin Moriwaki , Isamu Yuito , Kazuo Shiiki , Tsuyoshi Ohnishi , Tohru Ishitani , Toshio Kobayashi , Hideo Todokoro , Chiaki Ishikawa
发明人： Hisashi Takano , Naoki Koyama , Hideo Tanabe , Eijin Moriwaki , Isamu Yuito , Kazuo Shiiki , Tsuyoshi Ohnishi , Tohru Ishitani , Toshio Kobayashi , Hideo Todokoro , Chiaki Ishikawa
IPC分类号： G11B5187
CPC分类号： G11B5/3903 , G11B5/112 , G11B5/1278 , G11B5/1871 , G11B5/3103 , G11B5/3106 , G11B5/3116 , G11B5/3143 , G11B5/3163 , G11B5/3967
摘要： In a composite magnetic head comprising a magnetoresistive read head including a magnetic thin film having a magnetoresistive effect and soft magnetic members interposing the soft magnetic film between them through a non-magnetic insulation layer, an induction type write head-including poles formed in a moving direction of a medium and a conductor crossing the poles, and disposed in the proximity of the magnetoresistive head, and a substrate supporting these heads, the present invention discloses a composite magnetic head characterized in that part of a floating surface inclusive of the magnetic head constituent members has recesses and the read/write operations to and from the medium are effected by the portion interposed by these recesses.
摘要翻译：在包括具有磁阻效应的磁性薄膜的磁阻读头的复合磁头和通过非磁性绝缘层将软磁体插入到它们之间的软磁性部件的情况下，形成在移动中的感应型写头包含磁极介质和导体的方向，并且设置在磁阻头附近，以及支撑这些磁头的基板，本发明公开了一种复合磁头，其特征在于，包括磁头部件构件具有凹部，并且来自介质的读/写操作由通过这些凹部插入的部分实现。

18. 发明授权

US06531014B1 Process for making elastically stretchable composite sheet 有权
标题翻译：制造弹性伸缩性复合片的方法
公开(公告)号：US06531014B1
公开(公告)日：2003-03-11
申请号：US09610591
申请日：2000-07-05
申请人： Toshio Kobayashi , Hideyuki Ishikawa
发明人： Toshio Kobayashi , Hideyuki Ishikawa
IPC分类号： D04H154
CPC分类号： B32B5/26 , B32B5/022 , B32B5/024 , B32B5/04 , B32B5/06 , B32B37/0084 , B32B37/144 , B32B2038/0028 , B32B2555/02 , D04H1/492 , D04H1/498 , D04H1/555 , D04H1/559 , Y10T156/1023
摘要： A process for making an elastically stretchable composite sheet having a relatively low basis weight. An elastically stretchable second web is placed upon a first web comprising stretchable first continuous fibers and the first and second webs are intermittently bonded together to obtained a first composite web which is stretched under a plastic deformation of the first continuous fibers and then elastically contracted to obtain a second composite web.
摘要翻译：一种制造具有较低基重的弹性伸缩性复合片材的方法。将弹性伸缩的第二纤维网放置在包含可拉伸的第一连续纤维的第一纤维网上，并且将第一和第二纤维网间歇地粘合在一起以获得第一复合纤维网，该纤维网在第一连续纤维的塑性变形下被拉伸，然后弹性收缩第二个复合网。

19. 发明授权

US06483677B2 Magnetic disk apparatus including magnetic head having multilayered reproducing element using tunneling effect 失效
标题翻译：磁盘装置包括使用隧道效应的具有多层再生元件的磁头
公开(公告)号：US06483677B2
公开(公告)日：2002-11-19
申请号：US09931897
申请日：2001-08-20
申请人： Ryoichi Nakatani , Masahiro Kitada , Naoki Koyama , Isamu Yuito , Hisashi Takano , Eijin Moriwaki , Mikio Suzuki , Masaaki Futamoto , Fumio Kugiya , Yoshibumi Matsuda , Kazuo Shiiki , Yoshinori Miyamura , Kyo Akagi , Takeshi Nakao , Hirotsugu Fukuoka , Takayuki Munemoto , Tokuho Takagaki , Toshio Kobayashi , Hideo Tanabe , Noboru Shimizu
发明人： Ryoichi Nakatani , Masahiro Kitada , Naoki Koyama , Isamu Yuito , Hisashi Takano , Eijin Moriwaki , Mikio Suzuki , Masaaki Futamoto , Fumio Kugiya , Yoshibumi Matsuda , Kazuo Shiiki , Yoshinori Miyamura , Kyo Akagi , Takeshi Nakao , Hirotsugu Fukuoka , Takayuki Munemoto , Tokuho Takagaki , Toshio Kobayashi , Hideo Tanabe , Noboru Shimizu
IPC分类号： G11B539
CPC分类号： G11B5/398 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3903 , G11B5/3909 , G11B5/3929 , G11B5/3967 , G11B2005/0002 , G11B2005/0016 , G11B2005/3996 , H01F10/324 , H01F10/3254 , H01F10/3268 , H01L43/08 , Y10T29/49032 , Y10T29/49043 , Y10T29/49044 , Y10T29/49155
摘要： The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.
摘要翻译：磁阻效应元件是至少具有磁性层和抵抗磁性层的绝缘材料，半导体或反铁磁材料的中间层的多层结构，并且磁阻效应元件至少在相对的磁性层上形成端子，使得电流在中间层中流动。构成磁阻效应元件的所有磁性层的膜表面基本上与磁记录介质的记录表面成直角相对。因此，能够极大地降低与磁记录介质的记录面对置的磁性层的面积，因此能够通过电流检测来自高密度记录磁记录介质的非常窄的区域的磁场穿透特性，穿过中间层。

20. 发明授权

US06347427B2 Wiper device for vehicle 有权
标题翻译：汽车刮水装置
公开(公告)号：US06347427B2
公开(公告)日：2002-02-19
申请号：US09190059
申请日：1998-11-12
申请人： Toshio Kobayashi , Masami Goto , Hiroshi Ohsaki , Hiroshi Kojima , Masaaki Shimuba
发明人： Toshio Kobayashi , Masami Goto , Hiroshi Ohsaki , Hiroshi Kojima , Masaaki Shimuba
IPC分类号： B60S106
CPC分类号： B60S1/0402 , B60S1/0488 , B60S1/34 , B60S1/349 , B60S1/3493 , Y10S403/03
摘要： A wiper device for a vehicle disclosed is provided with a wiper motor, a wiper pivot connected to the wiper motor, and a pivot holder having a base portion attached to the vehicle body and a bearing hole pivotally supporting the wiper pivot in a rotatable manner. Here, the wiper pivot can rotate around the pivot axis thereof by using a drive force from the wiper motor and has a cutout portion, and the wiper pivot extends so as to project toward an outer side of the vehicle body. In such a structure, it is further structured such that a C ring engaged with the cutout portion of the wiper pivot is released from the cutout portion when a load equal to or more than a predetermined value acts on the wiper pivot. In this case, as a result, the wiper pivot is moved to an inner side of the vehicle body.
摘要翻译：一种用于车辆的刮水器装置设置有刮水器马达，连接到刮水器马达的刮水器枢轴和具有附接到车体的基部的枢轴保持器和可旋转地枢转地支撑刮水器枢轴的轴承孔。这里，刮水器枢轴可以通过使用来自刮水器马达的驱动力来绕其枢转轴线旋转，并且具有切口部分，并且刮水器枢轴延伸以朝向车身的外侧突出。在这种结构中，进一步构造成使得当等于或大于预定值的载荷作用在刮水器枢轴上时，与所述刮水器枢轴的切口部分接合的C形环从所述切口部分释放。在这种情况下，结果，刮水器枢轴移动到车体的内侧。

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