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1. 发明授权

US07074706B2 Semiconductor device and wiring forming method in semiconductor device 失效
公开(公告)号：US07074706B2
公开(公告)日：2006-07-11
申请号：US11112538
申请日：2005-04-22
申请人： Junichi Aoyama , Toshio Kobayashi
发明人： Junichi Aoyama , Toshio Kobayashi
IPC分类号： H01L21/4763
CPC分类号： H01L21/7682 , H01L21/76807 , H01L23/5221 , H01L23/5222 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a semiconductor device in which a problem such as a thermal diffusion defect in a hollow wiring technique can be solved. In the semiconductor device, a gap is formed between wirings formed on a substrate, and the gap is filled with a gas having a thermal conductivity equal to or higher than three times that of air at 0° C.

2. 发明授权

US06765297B2 Semiconductor device and wiring forming method in semiconductor device 失效
标题翻译：半导体器件中的半导体器件和布线形成方法
公开(公告)号：US06765297B2
公开(公告)日：2004-07-20
申请号：US10107568
申请日：2002-03-27
申请人： Junichi Aoyama , Toshio Kobayashi
发明人： Junichi Aoyama , Toshio Kobayashi
IPC分类号： H01L2348
CPC分类号： H01L21/7682 , H01L21/76807 , H01L23/5221 , H01L23/5222 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device in which a problem such as a thermal diffusion defect in a hollow wiring technique can be solved. In the semiconductor device, a gap is formed between wirings formed on a substrate, and the gap is filled with a gas having a thermal conductivity equal to or higher than three times that of air at 0° C.
摘要翻译：能够解决中空布线技术中的热扩散缺陷等问题的半导体装置。在半导体装置中，在形成于基板上的布线之间形成间隙，在0℃的空气填充导热率等于或高于3倍的气体的间隙。

3. 发明申请

US20050191841A1 Semiconductor device and wiring forming method in semiconductor device 失效
标题翻译：半导体器件中的半导体器件和布线形成方法
公开(公告)号：US20050191841A1
公开(公告)日：2005-09-01
申请号：US11112538
申请日：2005-04-22
申请人： Junichi Aoyama , Toshio Kobayashi
发明人： Junichi Aoyama , Toshio Kobayashi
IPC分类号： H01L21/312 , H01L21/316 , H01L21/318 , H01L21/768 , H01L23/522 , H01L21/4763
CPC分类号： H01L21/7682 , H01L21/76807 , H01L23/5221 , H01L23/5222 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a semiconductor device in which a problem such as a thermal diffusion defect in a hollow wiring technique can be solved. In the semiconductor device, a gap is formed between wirings formed on a substrate, and the gap is filled with a gas having a thermal conductivity equal to or higher than three times that of air at 0° C.
摘要翻译：本发明提供一种其中可以解决诸如中空布线技术中的热扩散缺陷的问题的半导体器件。在半导体装置中，在形成于基板上的布线之间形成间隙，在0℃的空气填充导热率等于或高于3倍的气体的间隙。

4. 发明授权

US06927158B2 Method of forming a semiconductor device with thermally conductive gas between wirings 失效
标题翻译：在布线之间形成具有导热气体的半导体器件的方法
公开(公告)号：US06927158B2
公开(公告)日：2005-08-09
申请号：US10646508
申请日：2003-08-22
申请人： Junichi Aoyama , Toshio Kobayashi
发明人： Junichi Aoyama , Toshio Kobayashi
IPC分类号： H01L21/312 , H01L21/316 , H01L21/318 , H01L21/768 , H01L23/522 , H01L21/4763
CPC分类号： H01L21/7682 , H01L21/76807 , H01L23/5221 , H01L23/5222 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a semiconductor device to have a gap between wirings formed on a substrate, which gap is filled with a gas having a thermal conductivity equal to or higher than three times that of air at zero degrees Celsius. In the method, the following steps are performed: (A) forming a wiring and a filling layer filled between wirings, on a substrate; (B) forming a gas permeable film on the wiring and the filling layer; (C) removing the filling layer through the gas permeable film so as to form a gap between the wirings; (D) filling a gas having a thermal conductivity equal to or higher than three times that of air at 0.degree. C. through the gas permeable film into the gap; and (E) forming a gas impermeable film on the gas permeable film.
摘要翻译：一种形成半导体器件的方法，其在衬底上形成的布线之间具有间隙，该间隙被填充有等于或高于零摄氏度的空气的热导率的气体。在该方法中，执行以下步骤：（A）在基板上形成布线和在布线之间填充的填充层; （B）在布线和填充层上形成透气膜; （C）通过透气膜去除填充层，以在布线之间形成间隙; （D）填充导热率等于或高于空气温度的3倍的气体的气体。 C.通过透气膜进入间隙; 和（E）在透气膜上形成不透气膜。

5. 发明授权

US06876079B2 Semiconductor device and method of manufacturing the same 失效
公开(公告)号：US06876079B2
公开(公告)日：2005-04-05
申请号：US10082576
申请日：2002-02-25
申请人： Junichi Aoyama
发明人： Junichi Aoyama
IPC分类号： H01L21/28 , H01L21/285 , H01L21/316 , H01L21/318 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L23/522 , H01L23/532 , H01L23/48 , H01L29/40
CPC分类号： H01L21/76885 , H01L21/28562 , H01L21/76897 , H01L23/5226 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： The present invention is to improve yield and reliability in a wiring step of a semiconductor device. When an Al wiring on an upper layer is connected through an connection pillar onto an Al wiring on a lower layer embedded in a groove formed on an interlayer insulation film, a growth suppression film having an opening whose width is wider than that of the Al wiring is formed on the interlayer insulation film and the Al wiring. In this condition, Al and the like are grown by a selective CVD method and the like. Accordingly, the connection pillar is formed on the Al wiring within the opening, in a self-matching manner with respect to the Al wiring.

6. 发明授权

US07589322B2 Sample measuring device 有权
标题翻译：样品测量装置
公开(公告)号：US07589322B2
公开(公告)日：2009-09-15
申请号：US11477085
申请日：2006-06-28
申请人： Kentaro Nishikata , Yutaka Saijo , Shigeru Kakinuma , Junichi Aoyama , Satoshi Ohashi
发明人： Kentaro Nishikata , Yutaka Saijo , Shigeru Kakinuma , Junichi Aoyama , Satoshi Ohashi
IPC分类号： G01N23/00
CPC分类号： H01J37/228 , H01J37/244 , H01J37/256 , H01J2237/2445 , H01J2237/24485 , H01J2237/24507 , H01J2237/24585 , H01J2237/2808
摘要： An object of this invention is to make it easy to adjust a position of the energy beam to irradiate and a position of a focal point of a light collecting mirror part, and to prevent displacement of the light collecting part due to vibration with a simple arrangement. A sample measuring device in accordance with this invention is to measure light generated from a sample W by irradiating electron beams EB on the sample W, and comprises a electron optical column part 23 that converges the electron beams EB, and a light collecting mirror part 31 that is arranged between the electron optical column part 23 and the sample W and that has an energy beam path 312 to pass the electron beams EB converged by the electron optical column part 23 and to irradiate the electron beams EB on the sample W and a mirror face 311 whose focal point F is set on an axis of the energy beam path 312 and that collects the light L generated from the sample W by means of the mirror face 311, wherein the light collecting mirror part 31 is supported by the electron optical column part 23 so that the axis of the electron beams EB coincides with the focal point F.
摘要翻译：本发明的目的是使得能够容易地调节照射的能量束的位置和聚光镜部的焦点的位置，并且以简单的布置来防止由于振动引起的聚光部的位移。根据本发明的样品测量装置是通过在样品W上照射电子束EB来测量由样品W产生的光，并且包括会聚电子束EB的电子光学柱部分23和聚光反射镜部分31 其布置在电子光学柱部分23和样品W之间，并且具有能量束路径312以使由电子光学柱部分23会聚的电子束EB照射到样品W上的电子束EB和反射镜其焦点F设置在能量束路径312的轴上并且通过镜面311收集从样本W产生的光L的面311，其中聚光镜部31由电子光学柱支撑部分23，使得电子束EB的轴线与焦点F一致。

7. 发明申请

US20050133925A1 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050133925A1
公开(公告)日：2005-06-23
申请号：US11050376
申请日：2005-02-03
申请人： Junichi Aoyama
发明人： Junichi Aoyama
IPC分类号： H01L21/28 , H01L21/285 , H01L21/316 , H01L21/318 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L23/522 , H01L23/532 , H01L21/4763 , H01L21/44 , H01L29/40
CPC分类号： H01L21/76885 , H01L21/28562 , H01L21/76897 , H01L23/5226 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： The present invention is to improve yield and reliability in a wiring step of a semiconductor device. When an Al wiring on an upper layer is connected through an connection pillar onto an Al wiring on a lower layer embedded in a groove formed on an interlayer insulation film, a growth suppression film having an opening whose width is wider than that of the Al wiring is formed on the interlayer insulation film and the Al wiring. In this condition, Al and the like are grown by a selective CVD method and the like. Accordingly, the connection pillar is formed on the Al wiring within the opening, in a self-matching manner with respect to the Al wiring.
摘要翻译：本发明是为了提高半导体装置的配线工序的成品率和可靠性。当上层的Al布线通过连接柱连接到嵌入在层间绝缘膜上形成的沟槽中的下层上的Al布线上时，具有宽度大于Al布线宽度的开口的生长抑制膜形成在层间绝缘膜和Al布线上。在这种条件下，通过选择性CVD法等来生长Al等。因此，连接柱以相对于Al布线的自匹配方式形成在开口内的Al布线上。

8. 发明申请

US20070023655A1 Sample measuring device 有权
标题翻译：样品测量装置
公开(公告)号：US20070023655A1
公开(公告)日：2007-02-01
申请号：US11477085
申请日：2006-06-28
申请人： Kentaro Nishikata , Yutaka Saijo , Shigeru Kakinuma , Junichi Aoyama , Satoshi Ohashi
发明人： Kentaro Nishikata , Yutaka Saijo , Shigeru Kakinuma , Junichi Aoyama , Satoshi Ohashi
IPC分类号： G21K7/00
CPC分类号： H01J37/228 , H01J37/244 , H01J37/256 , H01J2237/2445 , H01J2237/24485 , H01J2237/24507 , H01J2237/24585 , H01J2237/2808
摘要： An object of this invention is to make it easy to adjust a position of the energy beam to irradiate and a position of a focal point of a light collecting mirror part, and to prevent displacement of the light collecting part due to vibration with a simple arrangement. A sample measuring device in accordance with this invention is to measure light generated from a sample W by irradiating electron beams EB on the sample W, and comprises a electron optical column part 23 that converges the electron beams EB, and a light collecting mirror part 31 that is arranged between the electron optical column part 23 and the sample W and that has an energy beam path 312 to pass the electron beams EB converged by the electron optical column part 23 and to irradiate the electron beams EB on the sample W and a mirror face 311 whose focal point F is set on an axis of the energy beam path 312 and that collects the light L generated from the sample W by means of the mirror face 311, wherein the light collecting mirror part 31 is supported by the electron optical column part 23 so that the axis of the electron beams EB coincides with the focal point F.
摘要翻译：本发明的目的是使得能够容易地调节照射的能量束的位置和聚光镜部的焦点的位置，并且以简单的布置来防止由于振动引起的聚光部的位移。根据本发明的样品测量装置是通过在样品W上照射电子束EB来测量由样品W产生的光，并且包括会聚电子束EB的电子光学柱部分23和聚光反射镜部分31 其布置在电子光学柱部分23和样品W之间，并且具有能量束路径312以使由电子光学柱部分23会聚的电子束EB照射到样品W上的电子束EB和反射镜其焦点F设置在能量束路径312的轴上并且通过镜面311收集从样本W产生的光L的面311，其中聚光镜部31由电子光学柱支撑部分23，使得电子束EB的轴线与焦点F一致。

9. 发明授权

US06207585B1 Method of forming stacked insulating film and semiconductor device using the same 失效
标题翻译：层叠绝缘膜的形成方法及使用其的半导体装置
公开(公告)号：US06207585B1
公开(公告)日：2001-03-27
申请号：US09128545
申请日：1998-08-04
申请人： Toshiaki Hasegawa , Junichi Aoyama
发明人： Toshiaki Hasegawa , Junichi Aoyama
IPC分类号： H01L2131
CPC分类号： H01L21/02126 , C23C16/402 , H01L21/02211 , H01L21/02271 , H01L21/02304 , H01L21/02362 , H01L21/31051 , H01L21/3122 , H01L21/31612 , H01L21/76801 , H01L21/76828 , H01L21/76834 , H01L21/76837 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： Disclosed is a method of forming a cap insulating film at a high reliability prior to heat-treatment for removing an —OH group from a planarization insulating film (APL film) which is excellent in a gap fill ability and global planarization ability and which is formed by a liquid phase CVD process. The (lower) cap insulating film is formed by plasma CVD using a source gas containing an inorganic silane compound gas, O2 and a hydrocarbon; or an organic silane compound gas and O2. With this method, the cap insulating film can be formed without occurrence of harmful ammonia and particles in plasma.
摘要翻译：公开了一种在热处理之前以高可靠性形成帽绝缘膜的方法，用于从间隙填充能力和全局平坦化能力优异的平坦化绝缘膜（APL膜）中除去-OH基团，并形成通过液相CVD工艺。（下）帽绝缘膜通过使用含有无机硅烷化合物气体O 2和烃的源气体的等离子体CVD形成; 或有机硅烷化合物气体和O 2。通过该方法，可以形成帽绝缘膜，而不会在等离子体中产生有害的氨和颗粒。

10. 发明申请

US20050167845A1 Semiconductor device and method of manufacturing the same 失效
公开(公告)号：US20050167845A1
公开(公告)日：2005-08-04
申请号：US11091840
申请日：2005-03-28
申请人： Junichi Aoyama
发明人： Junichi Aoyama
IPC分类号： H01L21/28 , H01L21/285 , H01L21/316 , H01L21/318 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L23/522 , H01L23/532
CPC分类号： H01L21/76885 , H01L21/28562 , H01L21/76897 , H01L23/5226 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： The present invention is to improve yield and reliability in a wiring step of a semiconductor device. When an Al wiring on an upper layer is connected through an connection pillar onto an Al wiring on a lower layer embedded in a groove formed on an interlayer insulation film, a growth suppression film having an opening whose width is wider than that of the Al wiring is formed on the interlayer insulation film and the Al wiring. In this condition, Al and the like are grown by a selective CVD method and the like. Accordingly, the connection pillar is formed on the Al wiring within the opening, in a self-matching manner with respect to the Al wiring.

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