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    • 12. 发明授权
    • Low mismatch semiconductor device and method for fabricating same
    • 低失配半导体器件及其制造方法
    • US08610221B2
    • 2013-12-17
    • US12657909
    • 2010-01-29
    • Xiangdong ChenAkira Ito
    • Xiangdong ChenAkira Ito
    • H01L27/088
    • H01L21/28H01L27/092H01L29/78
    • Disclosed is a low mismatch semiconductor device that comprises a lightly doped channel region having a first conductivity type and a first dopant concentration in a semiconductor body, and a high-k metal gate stack including a gate metal layer formed over a high-k gate dielectric without having a dielectric cap on the high-k dielectric. The high-k metal gate stack being formed over the lightly doped channel region. The lightly doped channel region may be a P- or N-conductivity region, for example, and may be part of a corresponding P- or N-semiconductor substrate, or a P- or N-well formed in a substrate of the respectively opposite conductivity type. The disclosed semiconductor device, which may be an NMOS or PMOS analog device, for example, can be fabricated as part of an integrated circuit including one or more CMOS logic devices.
    • 公开了一种低失配半导体器件,其包括在半导体本体中具有第一导电类型和第一掺杂剂浓度的轻掺杂沟道区,以及包括形成在高k栅极电介质上的栅极金属层的高k金属栅堆叠 在高k电介质上没有电介质盖。 高k金属栅堆叠形成在轻掺杂沟道区上。 轻掺杂沟道区可以是例如P型或N-导电性区,并且可以是相应的P-或N-半导体衬底的一部分,也可以是在相对的相对的衬底中形成的P-阱或N阱 导电类型。 所公开的半导体器件(其可以是例如NMOS或PMOS模拟器件)可以被制造为包括一个或多个CMOS逻辑器件的集成电路的一部分。
    • 16. 发明申请
    • FIELD TRANSISTOR STRUCTURE MANUFACTURED USING GATE LAST PROCESS
    • 采用闸门过程制造的现场晶体管结构
    • US20130001574A1
    • 2013-01-03
    • US13174083
    • 2011-06-30
    • Chao-Yang LuGuang-Jye ShiauAkira Ito
    • Chao-Yang LuGuang-Jye ShiauAkira Ito
    • H01L29/78H01L21/28
    • H01L29/7839G11C17/16
    • According to embodiments of the invention, a field transistor structure is provided. The field transistor structure includes a semiconductor substrate, a metal gate, a polycrystalline silicon (polysilicon) layer, and first and second metal portions. The polysilicon layer has first, second, third, and fourth sides and is disposed between the semiconductor substrate on the first side and the metal gate on the second side. The polysilicon layer is also disposed between the first and second metal portions on the third and fourth sides. According to some embodiments of the present invention, the field transistor structure may also include a thin metal layer disposed between the polysilicon layer and the semiconductor substrate. The thin metal layer may be electronically coupled to each of the first and second metal portions.
    • 根据本发明的实施例,提供了场晶体管结构。 场晶体管结构包括半导体衬底,金属栅极,多晶硅(多晶硅)层以及第一和第二金属部分。 多晶硅层具有第一,第二,第三和第四边,并且设置在第一侧的半导体衬底和第二侧上的金属栅极之间。 多晶硅层也设置在第三和第四侧上的第一和第二金属部分之间。 根据本发明的一些实施例,场晶体管结构还可以包括设置在多晶硅层和半导体衬底之间的薄金属层。 薄金属层可以电连接到第一和第二金属部分中的每一个。
    • 19. 发明授权
    • Wireless communication system and transmission device
    • 无线通信系统和传输设备
    • US08116241B2
    • 2012-02-14
    • US11128285
    • 2005-05-13
    • Masahiko ShimizuAkira Ito
    • Masahiko ShimizuAkira Ito
    • H04B7/00H04B7/005H04B7/185H04L12/66H04W72/00
    • H04B7/0452H04B7/0626H04B7/0628
    • The present invention relates to a wireless communication system to properly switch over a transmission method of radio signals corresponding to a configuration of a receiver. The wireless communication system according to the present invention includes a transmitting device having a plurality of antennas and capable of transmitting radio signals different from each other from these antennas, and a receiving device having at least one antenna and receiving the radio signals transmitted from the transmitting device. The receiving device comprises an information transmitting unit transmitting, to the transmitting device, configuration information about a configuration of the receiving device, and the transmitting device includes a transmitting unit transmitting the radio signals by a transmission method corresponding to the configuration information received from the receiving device.
    • 无线通信系统技术领域本发明涉及一种适当切换对应于接收机的配置的无线信号的发送方法的无线通信系统。 根据本发明的无线通信系统包括具有多个天线并且能够从这些天线发送彼此不同的无线电信号的发送设备,以及具有至少一个天线的接收设备,并且接收从发送端发送的无线电信号 设备。 接收装置包括信息发送单元,向发送装置发送关于接收装置的结构的配置信息,发送装置包括发送单元,发送单元通过与从接收到的接收到的配置信息对应的发送方法发送无线信号 设备。
    • 20. 发明授权
    • Tape cassette and tape printer
    • 磁带盒和磁带打印机
    • US08011843B2
    • 2011-09-06
    • US11663697
    • 2005-09-26
    • Koshiro YamaguchiAkira ItoYoshio KuniedaTakahiro Miwa
    • Koshiro YamaguchiAkira ItoYoshio KuniedaTakahiro Miwa
    • B41J2/315B41J11/70B41J29/38
    • B41J15/044B41J3/4075
    • On the back side surface of a release paper of a double-sided adhesive tape 53, sensor marks 65 each in a rectangular shape elongated in the tape width direction when viewed from its front are printed beforehand at a predetermined pitch L along the tape transferring direction to be vertical and symmetric with each other with respect to the center line in the tape width direction. Further, on the double-sided adhesive tape 53, wireless tag circuit element 32 is provided between adjacent sensor marks 65 on the center line in the tape width direction and at a position equal to the distance l1 from each sensor mark 65 in the tape discharging direction (a direction shown by an arrow A1). An antenna 33 and a reflective sensor 35 are distanced from a cutter unit 30 by a distance l1 in the tape transfer direction. The cutter unit 30 and a thermal head 9 are distanced from each other by a distance l2 in the tape transfer direction.
    • 在双面胶带53的剥离纸的背面上,沿着带传送方向预先以预定的间距L预先将从前面观察到的沿带宽度方向延伸的长方形的传感器标记65 相对于带宽度方向的中心线彼此垂直和对称。 此外,在双面胶带53上,无线标签电路元件32设置在带宽度方向上的中心线上的相邻传感器标记65与位于带状放电中的每个传感器标记65的距离l1的位置处 方向(箭头A1所示的方向)。 天线33和反射传感器35在带传送方向上与切割器单元30隔开距离l1。 切割器单元30和热敏头9在带传送方向上彼此间隔距离l2。