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    • 14. 发明授权
    • Semiconductor structure with metal migration semiconductor barrier layers and method of forming the same
    • 具有金属迁移半导体阻挡层的半导体结构及其形成方法
    • US07202542B2
    • 2007-04-10
    • US10739755
    • 2003-12-17
    • Hojun YoonRichard KingJerry R. KukulkaJames H. ErmerMaggy L. Lau
    • Hojun YoonRichard KingJerry R. KukulkaJames H. ErmerMaggy L. Lau
    • H01L27/14
    • H01L31/022425H01L31/0304H01L31/068Y02E10/544Y02E10/547
    • A semiconductor structure includes a semiconductor substrate, a semiconductor active region, a semiconductor contact layer, at least one metal migration semiconductor barrier layer, and a metal contact. The metal migration semiconductor barrier layer may be embedded within the semiconductor contact layer. Furthermore, the metal migration semiconductor barrier layer may be located underneath or above and in intimate contact with the semiconductor contact layer. The metal migration semiconductor barrier layer and the semiconductor contact layer form a contact structure that prevents metals from migrating from the metal contact into the semiconductor active layer during long-term exposure to high temperatures. By providing a robust contact structure that may be used in semiconductor structures, for example in solar cells that power spacecraft or terrestrial solar cells used under concentrated sunlight, the high temperature reliability of the semiconductor structure will be improved and the operation time will be prolonged.
    • 半导体结构包括半导体衬底,半导体有源区,半导体接触层,至少一个金属迁移半导体阻挡层和金属接触。 金属迁移半导体阻挡层可以嵌入在半导体接触层内。 此外,金属迁移半导体阻挡层可以位于下方或上方并且与半导体接触层紧密接触。 金属迁移半导体势垒层和半导体接触层形成接触结构,该接触结构在长时间暴露于高温期间防止金属从金属接触迁移到半导体有源层中。 通过提供可用于半导体结构中的坚固的接触结构,例如在集中的太阳光下使用的太空电池或太阳能电池的太阳能电池中,将提高半导体结构的高温可靠性并且延长操作时间。
    • 15. 发明申请
    • Solar cells having a transparent composition-graded buffer layer
    • 具有透明组成梯度缓冲层的太阳能电池
    • US20050274411A1
    • 2005-12-15
    • US10868080
    • 2004-06-15
    • Richard KingChristopher FetzerPeter Colter
    • Richard KingChristopher FetzerPeter Colter
    • H01L31/00
    • H01L31/0687H01L31/0735H01L31/1852Y02E10/544Y02P70/521
    • A solar cell includes a first layer having a first-layer lattice parameter, a second layer having a second-layer lattice parameter different from the first-layer lattice parameter, wherein the second layer includes a photoactive second-layer material; and a third layer having a third-layer lattice parameter different from the second-layer lattice parameter, wherein the third layer includes a photoactive third-layer material. A transparent buffer layer extends between and contacts the second layer and the third layer and has a buffer-layer lattice parameter that varies with increasing distance from the second layer toward the third layer, so as to lattice match to the second layer and to the third layer. There may be additional subcell layers and buffer layers in the solar cell.
    • 太阳能电池包括具有第一层晶格参数的第一层,具有不同于第一层晶格参数的第二层晶格参数的第二层,其中第二层包括光活性第二层材料; 以及具有不同于所述第二层晶格参数的第三层晶格参数的第三层,其中所述第三层包括光活性第三层材料。 透明缓冲层在第二层和第三层之间延伸并接触第二层和第三层,并且具有随着从第二层朝向第三层的距离的增加而变化的缓冲层晶格参数,以便与第二层和第三层的晶格匹配 层。 在太阳能电池中可能存在附加的子电池层和缓冲层。
    • 16. 发明申请
    • Semiconductor structure with metal migration semiconductor barrier layers and method of forming the same
    • 具有金属迁移半导体阻挡层的半导体结构及其形成方法
    • US20050133919A1
    • 2005-06-23
    • US10739755
    • 2003-12-17
    • Hojun YoonRichard KingJerry KukulkaJames ErmerMaggy Lau
    • Hojun YoonRichard KingJerry KukulkaJames ErmerMaggy Lau
    • H01L23/48
    • H01L31/022425H01L31/0304H01L31/068Y02E10/544Y02E10/547
    • A semiconductor structure includes a semiconductor substrate, a semiconductor active region, a semiconductor contact layer, at least one metal migration semiconductor barrier layer, and a metal contact. The metal migration semiconductor barrier layer may be embedded within the semiconductor contact layer. Furthermore, the metal migration semiconductor barrier layer may be located underneath or above and in intimate contact with the semiconductor contact layer. The metal migration semiconductor barrier layer and the semiconductor contact layer form a contact structure that prevents metals from migrating from the metal contact into the semiconductor active layer during long-term exposure to high temperatures. By providing a robust contact structure that may be used in semiconductor structures, for example in solar cells that power spacecraft or terrestrial solar cells used under concentrated sunlight, the high temperature reliability of the semiconductor structure will be improved and the operation time will be prolonged.
    • 半导体结构包括半导体衬底,半导体有源区,半导体接触层,至少一个金属迁移半导体阻挡层和金属接触。 金属迁移半导体阻挡层可以嵌入在半导体接触层内。 此外,金属迁移半导体阻挡层可以位于下方或上方并且与半导体接触层紧密接触。 金属迁移半导体势垒层和半导体接触层形成接触结构,该接触结构在长时间暴露于高温期间防止金属从金属接触迁移到半导体有源层中。 通过提供可用于半导体结构中的坚固的接触结构,例如在集中的太阳光下使用的太空电池或太阳能电池的太阳能电池中,将提高半导体结构的高温可靠性并且延长操作时间。
    • 18. 发明申请
    • Method for Optimizing Heavy Hauler Pneumatic Tire Performance on Multi-Axled and Multi-Tired Vehicles
    • 在多轴和多轮车上优化重型拖拉机气动轮胎性能的方法
    • US20130211673A1
    • 2013-08-15
    • US13768500
    • 2013-02-15
    • Richard King
    • Richard King
    • B60C23/00
    • B60C23/00B60C19/001G01B3/20
    • A method for optimizing pneumatic tire performance on a multi-axled and multi-tired vehicle is disclosed. The method requires three events to occur on any single axle with tires in dual configuration: 1) accurate and correct measurement of all tires mounted on the axle; 2) a known super-imposed load weight on the axle; and 3) tire pressures influenced by tire size and imposed load. The simultaneous occurrence of these three events will allow all tires have the same bottom radii that allows them to rotate at the same surface speed. It is necessary to recognize that tires in operation have two radii; a top radius and a bottom radius which is calculated by subtracting the bottom deflection from the top radius. These manipulations achieve uniform bottom radius of all the tires and is the object of the invention. Also, disclosed is an apparatus for measuring the radius of a tire.
    • 公开了一种在多轴和多重车辆上优化充气轮胎性能的方法。 该方法需要在具有双重配置的轮胎的任何单个轴上发生三个事件:1)对安装在车轴上的所有轮胎进行准确和正确的测量; 2)轴上已知的超载荷重量; 和3)轮胎压力受轮胎尺寸和施加载荷的影响。 这三个事件的同时发生将允许所有轮胎具有相同的底部半径,以允许它们以相同的表面速度旋转。 有必要认识到,运行中的轮胎有两个半径; 通过从顶部半径减去底部偏转来计算的顶部半径和底部半径。 这些操作实现了所有轮胎的均匀的底部半径,并且是本发明的目的。 此外,还公开了一种用于测量轮胎半径的装置。
    • 19. 发明授权
    • Sealing plug removal apparatus
    • 密封塞去除装置
    • US08281469B2
    • 2012-10-09
    • US11814883
    • 2006-04-10
    • Richard King
    • Richard King
    • B23P19/02
    • B25B27/02Y10T29/53657Y10T29/53835Y10T29/53839Y10T29/53843Y10T29/53878Y10T29/53913Y10T29/53939Y10T29/53991
    • Apparatus for removing a sealing plug from a bore, the sealing plug has an outer sleeve and an inner stem retained within the outer sleeve, the removal taking place after a suitable hole has been drilled part-way into the stem, the removal apparatus has a tapered punch for forcible insertion into the hole in the stem to create an interference fit between the punch and the stem and thereafter driving the stem out of the sleeve while also retaining the stem on the punch by virtue of the interference fit, and sleeve-engaging portion engagable with the sleeve after the punch has removed the stem from the sleeve, the sleeve-engaging portion and the punch being thereafter removable from the bore to remove both the sleeve and the stem from the bore while the sleeve and the stem are both retained on the appropriate parts of the apparatus.
    • 用于从孔中去除密封塞的装置,所述密封塞具有外套筒和保持在所述外套筒内的内杆,所述去除在将合适的孔分别钻入所述杆中之后进行,所述移除装置具有 锥形冲头用于强制插入杆中的孔中以在冲头和杆之间产生过盈配合,然后将杆从套筒中驱动,同时还通过过盈配合将杆保持在冲头上,并且套筒接合 所述冲头在所述冲头已经从所述套筒移除所述杆之后可以与所述套筒接合,所述套筒接合部分和所述冲头此后可从所述孔中移除以从所述孔中移除所述套筒和所述杆,同时所述套筒和所述杆都保持 在设备的适当部分。
    • 20. 发明授权
    • Method of forming a semiconductor structure having metal migration semiconductor barrier layers
    • 形成具有金属迁移半导体势垒层的半导体结构的方法
    • US07687386B2
    • 2010-03-30
    • US11676953
    • 2007-02-20
    • Hojun YoonRichard KingJerry R. KukulkaJames H. ErmerMaggy L. Lau
    • Hojun YoonRichard KingJerry R. KukulkaJames H. ErmerMaggy L. Lau
    • H01L21/28
    • H01L31/022425H01L31/0304H01L31/068Y02E10/544Y02E10/547
    • A semiconductor structure includes a semiconductor substrate, a semiconductor active region, a semiconductor contact layer, at least one metal migration semiconductor barrier layer, and a metal contact. The metal migration semiconductor barrier layer may be embedded within the semiconductor contact layer. Furthermore, the metal migration semiconductor barrier layer may be located underneath or above and in intimate contact with the semiconductor contact layer. The metal migration semiconductor barrier layer and the semiconductor contact layer form a contact structure that prevents metals from migrating from the metal contact into the semiconductor active layer during long-term exposure to high temperatures. By providing a robust contact structure that may be used in semiconductor structures, for example in solar cells that power spacecraft or terrestrial solar cells used under concentrated sunlight, the high temperature reliability of the semiconductor structure will be improved and the operation time will be prolonged.
    • 半导体结构包括半导体衬底,半导体有源区,半导体接触层,至少一个金属迁移半导体阻挡层和金属接触。 金属迁移半导体阻挡层可以嵌入在半导体接触层内。 此外,金属迁移半导体阻挡层可以位于下方或上方并且与半导体接触层紧密接触。 金属迁移半导体势垒层和半导体接触层形成接触结构,该接触结构在长时间暴露于高温期间防止金属从金属接触迁移到半导体有源层中。 通过提供可用于半导体结构中的坚固的接触结构,例如在集中的太阳光下使用的太空电池或太阳能电池的太阳能电池中,将提高半导体结构的高温可靠性并且延长操作时间。