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    • 14. 发明授权
    • Fatty acid epoxygenase genes from plants and uses therefor in modifying fatty acid metabolism
    • 来自植物的脂肪酸环氧化酶基因,用于修饰脂肪酸代谢
    • US07589253B2
    • 2009-09-15
    • US09981124
    • 2001-10-17
    • Allan GreenSurinder SinghMarit LenmanSten Stymne
    • Allan GreenSurinder SinghMarit LenmanSten Stymne
    • C12N15/82A01H5/00
    • C12N9/0071C12N9/0004C12N15/8247C12P7/6409C12P7/6427C12P7/6472
    • The present invention relates generally to novel genetic sequences that encode fatty acid epoxygenase enzymes, in particular fatty acid Δ12-epoxygenase enzymes from plants that are mixed function monooxygenase enzymes. More particularly, the present invention exemplifies cDNA sequences from Crepis spp. and Vernonia galamensis that encode fatty acid Δ12-epoxygenases. The genetic sequences of the present invention provide the means by which fatty acid metabolism may be altered or manipulated in organisms, such as, for example, yeasts, moulds, bacteria, insects, birds, mammals and plants, and more particularly in plants. The invention also extends to genetically modified oil-accumulating organisms transformed with the subject genetic sequences and to the oils derived therefrom. The oils thus produced provide the means for the cost-effective raw materials for use in the efficient production of coatings, resins, glues, plastics, surfactants and lubricants.
    • 本发明一般涉及编码脂肪酸环氧化酶的新型遗传序列,特别是来自作为混合功能单加氧酶的植物的脂肪酸Delta12-环氧化酶。 更具体地,本发明举例说明了来自Crepis spp的cDNA序列。 和Vernonia galamensis,编码脂肪酸Delta12-环氧化酶。 本发明的遗传序列提供了在生物体例如酵母,霉菌,细菌,昆虫,鸟类,哺乳动物和植物中,更具体地在植物中可以改变或操纵脂肪酸代谢的方法。 本发明还延伸到用受试者遗传序列转化的转基因油积聚生物和由其衍生的油。 因此生产的油为用于有效生产涂料,树脂,胶水,塑料,表面活性剂和润滑剂的成本效益好的原材料提供了手段。
    • 15. 发明授权
    • Plant fatty acid epoxygenase genes and uses therefor
    • 植物脂肪酸环氧化酶基因及其用途
    • US06329518B1
    • 2001-12-11
    • US09059769
    • 1998-04-14
    • Allan GreenSurinder SinghMarit LenmanSten Stymne
    • Allan GreenSurinder SinghMarit LenmanSten Stymne
    • C12N1582
    • C12N9/0071C12N9/0004C12N15/8247C12P7/6409C12P7/6463
    • The present invention relates generally to novel genetic sequences which encode fatty acid epoxygenase enzymes. In particular, the present invention relates to genetic sequences which encode fatty acid &Dgr;12-epoxygenase enzymes comprising mixed function monooxygenase enzymes. More preferably, the present invention provides cDNA sequences which encode plant fatty acid epoxygenases, in particular the Crepis palaestina &Dgr;12-epoxygenase and homologues, analogues and derivatives thereof. The genetic sequences of the present invention provide the means by which fatty acid metabolism may be altered or manipulated in organisms such as yeasts, moulds, bacteria, insects, birds, mammals and plants, in particular to convert unsaturated fatty acids to epoxygenated fatty acids therein. The invention extends to genetically modified oil-accumulating organisms transformed with the subject genetic sequences and to the oils derived therefrom. The oils thus produced provide the means for the cost-effective raw materials for use in the efficient production of coatings, resins, glues, plastics, surfactants and lubricants, amongst others.
    • 本发明一般涉及编码脂肪酸环氧化酶的新型遗传序列。 特别地,本发明涉及编码包含混合功能单加氧酶的脂肪酸DELTA12-环氧化酶的遗传序列。 更优选地,本发明提供编码植物脂肪酸环氧化酶的cDNA序列,特别是Crepis palaestina DELTA12-环氧化酶及其同系物,类似物和衍生物。 本发明的遗传序列提供了在诸如酵母,霉菌,细菌,昆虫,鸟类,哺乳动物和植物的生物体中脂肪酸代谢可被改变或操作的手段,特别是将不饱和脂肪酸转化为环氧化脂肪酸 。 本发明延伸到用受试者遗传序列转化的转基因油积聚生物和由其衍生的油。 因此生产的油为用于有效生产涂料,树脂,胶水,塑料,表面活性剂和润滑剂等的成本效益好的原料提供了手段。
    • 18. 发明授权
    • U-gate transistors and methods of fabrication
    • U型栅极晶体管及其制造方法
    • US07071064B2
    • 2006-07-04
    • US10949994
    • 2004-09-23
    • Brian DoyleSurinder SinghUday ShahJustin BraskRobert Chau
    • Brian DoyleSurinder SinghUday ShahJustin BraskRobert Chau
    • H01L21/336H01L29/76
    • H01L29/7853H01L29/66795
    • A process is described for manufacturing of non-planar multi-corner transistor structures. A fin of a semiconductor material having a mask on a top surface of the fin is formed on a first insulating layer. A second insulating layer is formed on the fin exposing a top surface of the mask, wherein a protection layer is deposited between the fin and the second insulating layer. Next, the mask is removed and spacers are formed on the fin adjacent to the protection layer. A recess having a bottom and opposing sidewalls is formed in the fin. A gate dielectric layer and a gate electrode are formed on the top surface, the opposing sidewalls of the fin and on the bottom and on the opposing sidewalls of the recess in the fin. A source region and a drain region are formed in the fin at the opposite sides of the gate electrode.
    • 描述了用于制造非平面多角晶体管结构的工艺。 在第一绝缘层上形成具有在鳍的顶表面上的掩模的半导体材料的鳍。 在翅片上形成第二绝缘层,露出掩模的顶表面,其中保护层沉积在散热片和第二绝缘层之间。 接下来,去除掩模,并且在与保护层相邻的翅片上形成间隔物。 在翅片中形成具有底部和相对侧壁的凹部。 栅极电介质层和栅电极形成在翅片的顶表面,翅片的相对侧壁和底部上以及凹槽的相对侧壁上。 源极区域和漏极区域形成在栅极的相对侧的鳍片中。