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11. 发明授权

US07324313B2 Read sensor having an in-stack biasing structure and an AP coupled free layer structure for increased magnetic stability 失效
标题翻译：具有堆叠偏压结构的读取传感器和用于提高磁稳定性的AP耦合自由层结构
公开(公告)号：US07324313B2
公开(公告)日：2008-01-29
申请号：US10955681
申请日：2004-09-30
申请人： Jeffrey Robinson Childress , Robert E. Fontana, Jr. , Kuok San Ho , Ching Hwa Tsang
发明人： Jeffrey Robinson Childress , Robert E. Fontana, Jr. , Kuok San Ho , Ching Hwa Tsang
IPC分类号： G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/313 , G11B5/3903 , G11B5/3909 , G11B5/3932
摘要： Current-perpendicular-to-the-plane (CPP), current-in-to-the-plane (CIP), and tunnel valve type sensors are provided having an antiparallel (AP) coupled free layer structure, an in-stack biasing structure which stabilizes the AP coupled free layer structure and a nonmagnetic spacer layer formed between the in-stack biasing layer and the AP coupled free layer structure. The AP coupled free layer structure has a first AP coupled free layer adjacent to the nonmagnetic spacer layer, a second AP coupled free layer, and an antiparallel coupling (APC) layer formed between the first and the second AP coupled free layers. The net moment of the AP coupled free layer structure has an antiparallel edge magnetostatic coupling with the in-stack biasing structure. At the same time, the first AP coupled free layer has an antiparallel exchange coupling with the second AP coupled free layer. By forming the second AP coupled free layer with a thickness greater than a thickness of the first AP coupled free layer, the AP coupled free layer structure has a net magnetic moment in the direction of the second AP coupled free layer moment. The non-magnetic spacer layer is chosen so that first AP coupled free layer has a parallel interlayer (Neel or Orange-peel or positive exchange) coupling with the in-stack biasing structure, so that the interlayer coupling adds to the edge magnetostatic coupling to increase a stability of the AP coupled free layer structure.
摘要翻译：提供了电流垂直于平面（CPP），电流平面（CIP）和隧道阀式传感器，其具有反平行（AP）耦合自由层结构，堆叠偏置结构其稳定AP耦合的自由层结构和形成在堆叠间偏压层和AP耦合自由层结构之间的非磁性间隔层。 AP耦合自由层结构具有邻近非磁性间隔层的第一AP耦合自由层，第二AP耦合自由层以及形成在第一和第二AP耦合自由层之间的反并联耦合（APC）层。 AP耦合自由层结构的净矩具有与堆叠偏压结构的反平行边缘静磁耦合。同时，第一AP耦合自由层与第二AP耦合自由层具有反平行交换耦合。通过形成厚度大于第一AP耦合自由层的厚度的第二AP耦合自由层，AP耦合自由层结构在第二AP耦合自由层时刻的方向上具有净磁矩。选择非磁性间隔层，使得第一AP耦合自由层具有与堆叠偏压结构耦合的平行中间层（Neel或橙色剥离或正交换），使得层间耦合增加了边缘静磁耦合增加AP耦合自由层结构的稳定性。

12. 发明授权

US08018765B2 Three-dimensional magnetic memory 有权
标题翻译：三维磁记忆体
公开(公告)号：US08018765B2
公开(公告)日：2011-09-13
申请号：US12553670
申请日：2009-09-03
申请人： Robert E. Fontana, Jr. , Andreas Moser , Hal J. Rosen , Bruce D. Terris , Ching Hwa Tsang
发明人： Robert E. Fontana, Jr. , Andreas Moser , Hal J. Rosen , Bruce D. Terris , Ching Hwa Tsang
IPC分类号： G11C11/15 , G11C11/14
CPC分类号： G11C11/14 , G11C5/02 , G11C19/0808
摘要： Magnetic memories and methods are disclosed. A magnetic memory as described herein includes a plurality of stacked data storage layers to form a three-dimensional magnetic memory. Bits may be written to a data storage layer in the form of magnetic domains. The bits can then be transferred between the stacked data storage layers by heating a neighboring data storage layer, which allows the magnetic fields from the magnetic domains to imprint the magnetic domains in the neighboring data storage layer. By imprinting the magnetic domains into the neighboring data storage layer, the bits are copied from one data storage layer to another.
摘要翻译：公开了磁存储器和方法。如本文所述的磁存储器包括多个堆叠的数据存储层以形成三维磁存储器。位可以以磁畴的形式写入数据存储层。然后可以通过加热相邻数据存储层在堆叠的数据存储层之间传送这些位，这允许来自磁畴的磁场将磁畴压印在相邻的数据存储层中。通过将磁畴印刷到相邻数据存储层中，将这些位从一个数据存储层复制到另一个。

13. 发明授权

US07606065B2 Three-dimensional magnetic memory having bits transferrable between storage layers 有权
标题翻译：具有可在存储层之间传送的位的三维磁存储器
公开(公告)号：US07606065B2
公开(公告)日：2009-10-20
申请号：US12116111
申请日：2008-05-06
申请人： Robert E. Fontana, Jr. , Andreas Moser , Hal J. Rosen , Bruce D. Terris , Ching Hwa Tsang
发明人： Robert E. Fontana, Jr. , Andreas Moser , Hal J. Rosen , Bruce D. Terris , Ching Hwa Tsang
IPC分类号： G11C11/15 , G11C11/14
CPC分类号： G11C11/14 , G11C5/02 , G11C19/0808
摘要： Magnetic memories and methods are disclosed. A magnetic memory as described herein includes a plurality of stacked data storage layers to form a three-dimensional magnetic memory. Bits may be written to a data storage layer in the form of magnetic domains. The bits can then be transferred between the stacked data storage layers by heating a neighboring data storage layer, which allows the magnetic fields from the magnetic domains to imprint the magnetic domains in the neighboring data storage layer. By imprinting the magnetic domains into the neighboring data storage layer, the bits are copied from one data storage layer to another.
摘要翻译：公开了磁存储器和方法。如本文所述的磁存储器包括多个堆叠的数据存储层以形成三维磁存储器。位可以以磁畴的形式写入数据存储层。然后可以通过加热相邻数据存储层在堆叠的数据存储层之间传送这些位，这允许来自磁畴的磁场将磁畴压印在相邻的数据存储层中。通过将磁畴印刷到相邻数据存储层中，将这些位从一个数据存储层复制到另一个。

14. 发明授权

US5164869A Magnetic recording head with integrated magnetoresistive element and open yoke 失效
标题翻译：磁性录音头与集成磁性元件和开放的YOKE
公开(公告)号：US5164869A
公开(公告)日：1992-11-17
申请号：US661797
申请日：1991-02-27
申请人： Robert E. Fontana, Jr. , Lubomyr T. Romankiw , Mason L. Williams, III
发明人： Robert E. Fontana, Jr. , Lubomyr T. Romankiw , Mason L. Williams, III
IPC分类号： G11B5/31 , G11B5/39
CPC分类号： G11B5/3967
摘要： An integrated inductive write, magnetoresistive (MR) read thin film magnetic head comprising an open magnetic yoke having outside legs each having a winding thereon and a central leg having an opening across which the MR element is coupled. The outer legs are overlapped at one end to form confronting pole pieces having a transducing gap between the pole pieces, and the central leg is positioned between the pole pieces at one end and joined with the outer legs at the other end to form a symmetrical magnetic yoke structure. The windings are wound in a direction so that the flux produced by equally energizing the windings is equal and opposite in each of the outside legs, is additive at the transducing gap between the pole pieces, and produces no net flux through the central leg.

15. 发明授权

US5454158A Method of making integral transducer-suspension assemblies for longitudinal recording 失效
标题翻译：制造用于纵向记录的整体式传感器 - 悬挂组件的方法
公开(公告)号：US5454158A
公开(公告)日：1995-10-03
申请号：US270104
申请日：1994-07-01
申请人： Robert E. Fontana, Jr. , David A. Thompson , Mason L. Williams, III , Celia E. Yeack-Scranton
发明人： Robert E. Fontana, Jr. , David A. Thompson , Mason L. Williams, III , Celia E. Yeack-Scranton
IPC分类号： G11B5/31 , G11B5/48 , G11B5/60
CPC分类号： G11B5/6005 , G11B5/3103 , G11B5/3106 , G11B5/3133 , G11B5/3163 , G11B5/484 , Y10T29/49032 , Y10T29/49041 , Y10T29/49044
摘要： An integral combination magnetic transducer and suspension assembly suitable for use in both contact recording and in winchester-type applications is described. A generally rectangular elongate flat suspension member includes a ring-type inductive read/write transducer formed integrally with the suspension member and is embedded in one end of the suspension member. The ring-type inductive transducer is suitable for horizontal recording applications. The transducer magnetic poletips and magnetic gap are formed and positioned such that the poletips and gap are essentially co-planar with the air bearing surface of a slider-shaped protrusion extending from the lower surface of the end of the suspension member adjacent a moving media during operation. The air bearing surface presented to the disk has most of its area covered with a wear layer to minimize wear of the slider surface and poletips.
摘要翻译：描述适用于接触记录和温彻斯特型应用的整体组合磁传感器和悬架组件。大致矩形的细长扁平悬挂构件包括与悬挂构件一体形成并嵌入在悬架构件的一端中的环型感应读/写换能器。环型感应传感器适用于水平记录应用。传感器磁性弹片和磁隙被形成和定位成使得弹片和间隙基本上与从邻近移动介质的悬挂构件的端部的下表面延伸的滑块形突起的空气支承表面共同平齐操作。提供给盘的空气轴承表面的大部分区域覆盖有耐磨层，以最小化滑块表面和弹片的磨损。

16. 发明授权

US08169751B2 Magnetoresistive sensor having a structure for activating and deactivating electrostatic discharge prevention circuitry 失效
标题翻译：具有用于激活和去激活静电放电防止电路的结构的磁阻传感器
公开(公告)号：US08169751B2
公开(公告)日：2012-05-01
申请号：US11426908
申请日：2006-06-27
申请人： Thomas Robert Albrecht , Robert E. Fontana, Jr. , Bruce Alvin Gurney , Timothy Clark Reiley , Xiao Z. Wu
发明人： Thomas Robert Albrecht , Robert E. Fontana, Jr. , Bruce Alvin Gurney , Timothy Clark Reiley , Xiao Z. Wu
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/40
摘要： A structure for preventing Electrostatic Discharge (LSD) damage to a magnetoresistive sensor during manufacture. The structure includes a switching element that can be switched off during testing of the sensor and then switched back on to provide ESD shunting to the sensor. The switch can be a thermally activated mechanical relay built onto the slider. The switch could also be a programmable resistor that includes to solid electrolyte sandwiched between first and second electrodes. One of the electrodes functions as an anode. When voltage is applied in a first direction an ion bridge forms across through the electrolyte across electrodes making the resistor conductive. When a voltage is applied in a second direction, the ion bridge recedes and the programmable resistor becomes essentially non-conductive.
摘要翻译：用于在制造期间防止静电放电（LSD）损坏磁阻传感器的结构。该结构包括开关元件，该开关元件可以在测试传感器期间关闭，然后重新接通以向传感器提供ESD分流。该开关可以是内置在滑块上的热激活机械继电器。开关也可以是可编程电阻器，其包括夹在第一和第二电极之间的固体电解质。电极之一用作阳极。当沿第一方向施加电压时，离子桥跨越电解质跨过电极跨过电极，使电阻器导电。当沿第二个方向施加电压时，离子桥退出，可编程电阻基本上不导电。

17. 发明授权

US08102236B1 Thin film inductor with integrated gaps 有权
标题翻译：具有集成间隙的薄膜电感器
公开(公告)号：US08102236B1
公开(公告)日：2012-01-24
申请号：US12968118
申请日：2010-12-14
申请人： Robert E. Fontana, Jr. , William J. Gallagher , Philipp Herget , Bucknell C. Webb
发明人： Robert E. Fontana, Jr. , William J. Gallagher , Philipp Herget , Bucknell C. Webb
IPC分类号： H01F5/00
CPC分类号： H01F17/0006 , H01F3/14
摘要： A thin film inductor according to one embodiment includes one or more arms; one or more conductors passing through each arm; a first ferromagnetic yoke wrapping partially around the one or more conductors in a first of the one or more arms, the first ferromagnetic yoke comprising a magnetic top section, a magnetic bottom section, and via regions positioned on opposites sides of the one or more conductors in the first of the one or more arms, wherein the magnetic top section and magnetic bottom section are coupled together through a low reluctance path in the via regions; and one or more non-magnetic gaps between the top section and the bottom section in at least one of the via regions. Additional systems and methods are also provided.
摘要翻译：根据一个实施例的薄膜电感器包括一个或多个臂; 穿过每个臂的一个或多个导体; 所述第一铁磁磁轭围绕所述一个或多个臂中的第一个中的所述一个或多个导体包围，所述第一铁磁轭包括磁性顶部，磁性底部部分和位于所述一个或多个导体的相对侧上的通孔区域在一个或多个臂中的第一个中，其中磁性顶部部分和磁性底部部分通过通孔区域中的低磁阻路径耦合在一起; 以及在至少一个通孔区域中的顶部和底部之间的一个或多个非磁性间隙。还提供了附加的系统和方法。

18. 发明授权

US08070554B2 Distributed shunt structure for lapping of current perpendicular plane (CPP) heads 有权
标题翻译：分布式分流结构，用于研磨电流垂直平面（CPP）头
公开(公告)号：US08070554B2
公开(公告)日：2011-12-06
申请号：US10990926
申请日：2004-11-17
申请人： Robert E. Fontana, Jr. , Neil Leslie Robertson , Huey-Ming Tzeng
发明人： Robert E. Fontana, Jr. , Neil Leslie Robertson , Huey-Ming Tzeng
IPC分类号： B24B49/00
CPC分类号： G11B5/3163 , G11B5/3166 , G11B5/3169 , G11B5/332 , G11B5/3906 , G11B5/40
摘要： An apparatus and method for lapping and fabricating a read/write head is described. The lapping method includes performing a first lapping process on a structure having the read/write head fabricated therein. The first lapping process is for reducing a first resistive region. The first resistive region is located proximal to a surface of the structure. The first lapping process is for achieving a first lapping benchmark. The lapping method further includes performing a second lapping process on a second resistive region. The second lapping process laps at a rate lesser than the first lapping process. The second lapping process is for achieving a second lapping benchmark. The second resistive region is interposed between the first resistive region and the read/write head. The second resistive region has a different resistive value than the second resistive region.
摘要翻译：描述了用于研磨和制造读/写头的装置和方法。研磨方法包括对其中制造读/写头的结构执行第一研磨处理。第一次研磨工艺用于减少第一电阻区域。第一电阻区域位于结构的表面附近。第一个研磨过程是实现第一次研磨基准。研磨方法还包括在第二电阻区域上进行第二研磨处理。第二次研磨过程以比第一次研磨过程低的速度进行。第二次研磨过程是实现第二次研磨基准。第二电阻区域介于第一电阻区域和读/写头之间。第二电阻区域具有与第二电阻区域不同的电阻值。

19. 发明授权

US07016167B2 Spin valve transistor with stabilization and method for producing the same 失效
标题翻译：具有稳定性的旋转阀晶体管及其制造方法
公开(公告)号：US07016167B2
公开(公告)日：2006-03-21
申请号：US10406779
申请日：2003-04-03
申请人： Robert E. Fontana, Jr. , Jeffrey S. Lille
发明人： Robert E. Fontana, Jr. , Jeffrey S. Lille
IPC分类号： G11B5/127
CPC分类号： H01F10/3268 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/3906 , G11B5/3932 , G11B2005/0008 , G11B2005/3996 , H01F41/302 , H01F41/325 , H01L29/66984 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044
摘要： A method and structure for a spin valve transistor (SVT) comprises a magnetic field sensor, an insulating layer adjacent the magnetic field sensor, a bias layer adjacent the insulating layer, a non-magnetic layer adjacent the bias layer, and a ferromagnetic layer over the non-magnetic layer, wherein the insulating layer and the non-magnetic layer comprise antiferromagnetic materials. The magnetic field sensor comprises a base region, a collector region adjacent the base region, an emitter region adjacent the base region, and a barrier region located between the base region and the emitter region. The bias layer is between the insulating layer and the non-magnetic layer. The bias layer is magnetic and is at least three times the thickness of the magnetic materials in the base region.
摘要翻译：自旋阀晶体管（SVT）的方法和结构包括磁场传感器，与磁场传感器相邻的绝缘层，与绝缘层相邻的偏置层，邻近偏置层的非磁性层，以及铁磁层非磁性层，其中绝缘层和非磁性层包括反铁磁材料。磁场传感器包括基极区域，邻近基极区域的集电极区域，邻近基极区域的发射极区域和位于基极区域和发射极区域之间的势垒区域。偏置层位于绝缘层和非磁性层之间。偏置层是磁性的，并且是基极区域中的磁性材料的厚度的至少三倍。

20. 发明授权

US06778364B2 Current-in-plane magnetoresistive sensor with longitudinal biasing layer having a nonmagnetic oxide central region and method for fabrication of the sensor 失效
标题翻译：具有具有非磁性氧化物中心区域的纵向偏置层的电流平面内磁阻传感器和用于制造传感器的方法
公开(公告)号：US06778364B2
公开(公告)日：2004-08-17
申请号：US10230903
申请日：2002-08-28
申请人： Elizabeth A. Dobisz , Robert E. Fontana, Jr. , James L. Nix , Neil Smith
发明人： Elizabeth A. Dobisz , Robert E. Fontana, Jr. , James L. Nix , Neil Smith
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/012 , G11B5/3116 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , Y10T29/49044
摘要： A current-in-the-plane (CIP) giant magnetoresistive (GMR) spin valve sensor has its free layer magnetization stabilized by longitudinal biasing through the use of free layer end-region antiferromagnetic exchange coupling. An antiparallel coupling (APC) layer, such as Ru, is formed on the free layer and a ferromagnetic bias layer is formed on the APC layer. The bias layer is a continuous layer that extends across the entire width of the free layer. The central region of the bias layer is formed of nonmagnetic oxides of one or more of the elements making up the bias layer, with the bias layer end regions remaining ferromagnetic. The oxidized central region of the bias layer defines the central active trackwidth region of the underlying free layer. The ferromagnetic end regions of the bias layer are antiferromagnetically coupled across the APC layer to the corresponding underlying free layer end regions to provide the longitudinal biasing.
摘要翻译：电流平面（CIP）巨磁阻（GMR）自旋阀传感器通过使用自由层末端反铁磁交换耦合的纵向偏置使其自由层磁化稳定。在自由层上形成诸如Ru的反平行耦合（APC）层，并且在APC层上形成铁磁偏置层。偏置层是在自由层的整个宽度上延伸的连续层。偏置层的中心区域由构成偏置层的一个或多个元件的非磁性氧化物形成，偏置层端部区域保持铁磁性。偏置层的氧化中心区域定义了下层自由层的中心主动轨道宽度区域。偏置层的铁磁端区域跨越APC层反铁磁耦合到相应的下游自由层端部区域以提供纵向偏置。

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