专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明授权

US06867468B2 Magnetic shielding for reducing magnetic interference 有权
标题翻译：磁屏蔽减少磁干扰
公开(公告)号：US06867468B2
公开(公告)日：2005-03-15
申请号：US10440279
申请日：2003-05-15
申请人： Manish Sharma , Manoj Bhattacharyya
发明人： Manish Sharma , Manoj Bhattacharyya
IPC分类号： G11C5/02 , G11C11/15 , H01L43/00 , H01L21/00
CPC分类号： G11C11/15 , G11C5/025
摘要： A magnetic memory array comprises a plurality of magnetic memory cells, a magnetic shielding disposed adjacent to at least one of the magnetic memory cells to reduce magnetic interference with respect to another of the magnetic memory cells, and an insulator disposed as to separate at least a portion of the magnetic shielding from the at least one magnetic memory cell. The magnetic shielding may be a magnetic shield layer, patterned magnetic shield materials, and/or magnetic particles embedded in the insulator.
摘要翻译：磁存储器阵列包括多个磁存储器单元，与至少一个磁存储单元相邻设置的磁屏蔽，以减小相对于另一个磁存储单元的磁干扰;以及绝缘体，其被设置为至少分离来自至少一个磁存储单元的部分磁屏蔽。磁屏蔽可以是嵌入绝缘体中的磁屏蔽层，图案化磁屏蔽材料和/或磁性颗粒。

12. 发明授权

US06765819B1 Magnetic memory device having improved switching characteristics 有权
标题翻译：具有改进的开关特性的磁存储器件
公开(公告)号：US06765819B1
公开(公告)日：2004-07-20
申请号：US10205531
申请日：2002-07-25
申请人： Manoj Bhattacharyya , Thomas C. Anthony , Frederick A. Perner , Steven C. Johnson
发明人： Manoj Bhattacharyya , Thomas C. Anthony , Frederick A. Perner , Steven C. Johnson
IPC分类号： G11C1100
CPC分类号： G11C11/16
摘要： Magnetic memory devices are disclosed. In one embodiment, the device comprises a memory cell having an easy axis aligned along a first direction, the memory cell being configured so as to be most easily switched from one logic state to another when only receiving a magnetic field along the first direction, and a magnetic biasing element associated with the memory cell, the magnetic biasing element having a magnetic orientation aligned along a second direction different from the first direction.
摘要翻译：公开了磁存储器件。在一个实施例中，该装置包括具有沿着第一方向对准的容易轴的存储单元，所述存储单元被配置为当仅沿着第一方向接收磁场时最容易从一个逻辑状态切换到另一逻辑状态;以及与所述存储单元相关联的磁偏置元件，所述磁偏置元件具有沿着不同于所述第一方向的第二方向排列的磁取向。

13. 发明申请

US20050169059A1 Current threshold detector 有权
标题翻译：电流阈值检测器
公开(公告)号：US20050169059A1
公开(公告)日：2005-08-04
申请号：US10767428
申请日：2004-01-29
申请人： Frederick Perner , Manoj Bhattacharyya
发明人： Frederick Perner , Manoj Bhattacharyya
IPC分类号： G11C11/15 , G11C5/00 , G11C7/00 , G11C11/16 , G11C29/00 , H01L21/8246 , H01L27/105
CPC分类号： G11C11/1673 , G11C11/1675 , G11C29/021 , G11C29/028 , G11C29/24 , G11C29/50008 , G11C2029/5002 , G11C2029/5006
摘要： A magnetic memory cell write current threshold detector. The magnetic memory cell write current threshold detector includes a first MRAM test cell receiving a write current and sensing when the write current exceeds a first threshold, and a second MRAM test cell receiving the write current and sensing when the write current exceeds a second threshold.
摘要翻译：磁存储单元写入电流阈值检测器。磁存储单元写入电流阈值检测器包括第一MRAM测试单元，其接收写入电流并检测写入电流是否超过第一阈值;以及第二MRAM测试单元接收写入电流并感测写入电流超过第二阈值时。

14. 发明授权

US06905888B2 Magnetic memory element having controlled nucleation site in data layer 有权
标题翻译：磁记忆元件在数据层中具有受控的成核位点
公开(公告)号：US06905888B2
公开(公告)日：2005-06-14
申请号：US10676414
申请日：2003-09-30
申请人： Janice H. Nickel , Manoj Bhattacharyya
发明人： Janice H. Nickel , Manoj Bhattacharyya
IPC分类号： G11C11/15 , G11C11/16 , H01L21/8246 , H01L27/105 , H01L43/08 , H01L21/00
CPC分类号： G11C11/16 , G11C11/15
摘要： A ferromagnetic data layer of a magnetic memory element is formed with a controlled nucleation site. In some embodiments, the nucleation site may be a divot in the data layer or a protrusion from the data layer. A Magnetic Random Access Memory (“MRAM”) device may include an array of magnetic memory elements having data layers with controlled nucleation sites.
摘要翻译：磁记忆元件的铁磁数据层形成有受控的成核位点。在一些实施方案中，成核位点可以是数据层中的裂缝或来自数据层的突起。磁性随机存取存储器（“MRAM”）器件可以包括具有受控成核位点的数据层的磁存储元件阵列。

15. 发明授权

US06803616B2 Magnetic memory element having controlled nucleation site in data layer 有权
标题翻译：磁记忆元件在数据层中具有受控的成核位点
公开(公告)号：US06803616B2
公开(公告)日：2004-10-12
申请号：US10173195
申请日：2002-06-17
申请人： Janice H. Nickel , Manoj Bhattacharyya
发明人： Janice H. Nickel , Manoj Bhattacharyya
IPC分类号： H01L2976
CPC分类号： G11C11/16 , G11C11/15
摘要： A ferromagnetic data layer of a magnetic memory element is formed with a controlled nucleation site. The controlled nucleation sites improve the switching distribution of the magnetic memory elements, which increases reliability of writing to the magnetic memory elements. A Magnetic Random Access Memory (MRAM) device may include an array of such magnetic memory elements.
摘要翻译：磁记忆元件的铁磁数据层形成有受控的成核位点。受控的成核位点改善了磁存储元件的开关分布，这增加了写入磁存储元件的可靠性。磁性随机存取存储器（MRAM）装置可以包括这种磁存储元件的阵列。

16. 发明申请

US20050180238A1 CONTROLLED TEMPERATURE, THERMAL-ASSISTED MAGNETIC MEMORY DEVICE 有权
标题翻译：受控温度，热辅助磁存储器件
公开(公告)号：US20050180238A1
公开(公告)日：2005-08-18
申请号：US10779909
申请日：2004-02-17
申请人： Frederick Perner , Manoj Bhattacharyya
发明人： Frederick Perner , Manoj Bhattacharyya
IPC分类号： G11C11/15 , H01L21/8246 , H01L27/105 , H01L43/08 , G11C11/14 , G11C7/04
CPC分类号： G11C11/15 , G11C11/1675
摘要： This invention provides a controlled temperature, thermal-assisted magnetic memory device. In a particular embodiment, there is an array of SVM cells, each characterized by an alterable orientation of magnetization and including a material wherein the coercivity is decreased upon an increase in temperature. In addition, at least one reference SVM (RSVM) cell substantially similar to and in close proximity to the SVM cells of the array is provided. A provided feedback control temperature controller receives a feedback voltage from the reference SVM cell, corresponding to temperature, and adjusts power applied to the RSVM cell and SVM cell. An associated method of use is further provided.
摘要翻译：本发明提供一种受控温度的热辅助磁存储器件。在特定实施例中，存在SVM单元阵列，每个SVM单元的特征在于磁化方向的可变方向，并且包括其中矫顽力在温度升高时降低的材料。此外，提供了与阵列的SVM单元基本相似并且非常接近的至少一个参考SVM（RSVM）单元。提供的反馈控制温度控制器从参考SVM单元接收对应于温度的反馈电压，并调整施加到RSVM单元和SVM单元的功率。还提供了相关联的使用方法。

17. 发明授权

US06862212B2 Multi-bit magnetic memory cells 有权
标题翻译：多位磁记忆体单元
公开(公告)号：US06862212B2
公开(公告)日：2005-03-01
申请号：US10697172
申请日：2003-10-30
申请人： Janice H. Nickel , Manoj Bhattacharyya
发明人： Janice H. Nickel , Manoj Bhattacharyya
IPC分类号： G11C11/14 , G11C11/15 , G11C11/16 , G11C11/56 , H01F10/30 , H01L21/8246 , H01L27/105 , H01L43/00 , H01L43/08 , G11C11/00
CPC分类号： H01L43/08 , G11C11/15 , G11C11/16 , G11C11/5607 , G11C2211/5615 , G11C2211/5616 , H01F10/3254 , H01F41/307 , H01L27/222
摘要： A magnetic memory cell includes first and second magneto-resistive devices connected in series. The first and second magneto-resistive devices have sense layers with different coercivities. Magnetic Random Access Memory (MRAM) devices may include arrays of these memory cells.
摘要翻译：磁存储单元包括串联连接的第一和第二磁阻元件。第一和第二磁阻装置具有不同矫顽力的感应层。磁性随机存取存储器（MRAM）设备可以包括这些存储器单元的阵列。

18. 发明授权

US06795281B2 Magneto-resistive device including soft synthetic ferrimagnet reference layer 有权
标题翻译：磁阻器件包括软质合成铁磁参考层
公开(公告)号：US06795281B2
公开(公告)日：2004-09-21
申请号：US09963933
申请日：2001-09-25
申请人： Lung Tran , Manish Sharma , Manoj Bhattacharyya
发明人： Lung Tran , Manish Sharma , Manoj Bhattacharyya
IPC分类号： H01L2984
CPC分类号： B82Y25/00 , G11C11/16 , H01F10/3277
摘要： A memory device includes a data layer having a magnetization that can be oriented in first and second directions; and a synthetic ferrimagnet reference layer. The data and reference layers have different coercivities.
摘要翻译：存储器件包括具有可以在第一和第二方向上定向的磁化的数据层; 和合成亚铁磁参考层。数据和参考层具有不同的矫顽力。

19. 发明授权

US06775196B2 Magnetic memory having a temperature compensated write circuit 有权
标题翻译：具有温度补偿写入电路的磁存储器
公开(公告)号：US06775196B2
公开(公告)日：2004-08-10
申请号：US10194767
申请日：2002-07-12
申请人： Frederick A. Perner , Manoj Bhattacharyya
发明人： Frederick A. Perner , Manoj Bhattacharyya
IPC分类号： G11C704
CPC分类号： G11C7/04 , G11C11/16
摘要： A magnetic memory is disclosed. In one embodiment, the magnetic memory includes a magnetic memory cell, a conductor which crosses the magnetic memory cell and a circuit coupled to the conductor configured to apply a modified magnetic field to the magnetic memory cell in response to temperature variations in the magnetic memory cell.
摘要翻译：公开了磁存储器。在一个实施例中，磁存储器包括磁存储器单元，穿过磁存储单元的导体和耦合到导体的电路，该电路被配置为响应于磁存储单元中的温度变化而将修改的磁场施加到磁存储单元。

20. 发明授权

US06466471B1 Low power MRAM memory array 有权
标题翻译：低功耗MRAM存储器阵列
公开(公告)号：US06466471B1
公开(公告)日：2002-10-15
申请号：US09865596
申请日：2001-05-29
申请人： Manoj Bhattacharyya
发明人： Manoj Bhattacharyya
IPC分类号： G11C702
CPC分类号： G11C11/16
摘要： An MRAM memory array has nonlinear word lines and linear bit lines. The word lines cross the bit lines at memory cell locations, and are substantially coextensive with the bit lines at the crossing points. When a current is passed through the word and bit lines, the magnetic fields generated by the word line and the bit line at a coextensive portion are substantially aligned. The magnitude of the resultant field is therefore greater than in conventional, orthogonally oriented fields. Because the addition of the fields generated by the word and bit lines is enhanced, smaller word and bit line currents can be utilized, which reduces the size required for the memory array. The memory array can also utilize memory cells having a magnetic layer for producing a transverse magnetic field. The transverse field is orthogonally oriented to the magnetic field generated by the word and bit lines, and increases the reproducibility of switching of the memory cell. The transverse field also reduces the current required to switch the memory cell.
摘要翻译： MRAM存储器阵列具有非线性字线和线性位线。字线在存储单元位置处与位线交叉，并且在交叉点处与位线基本上共同延伸。当电流通过字线和位线时，由共线延伸部分上的字线和位线产生的磁场基本对齐。因此，所得场的幅度大于常规的正交取向场。由于增加了由字和位线产生的场的增加，可以利用更小的字和位线电流，这减小了存储器阵列所需的尺寸。存储器阵列还可以利用具有用于产生横向磁场的磁性层的存储单元。横向场与由字和位线产生的磁场正交地取向，并增加了存储单元切换的再现性。横向场还减少了切换存储单元所需的电流。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式