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11. 发明授权

US08368067B2 Oxide semiconductor device with oxide semiconductor layers of different oxygen concentrations and method of manufacturing the same 失效
标题翻译：具有不同氧浓度的氧化物半导体层的氧化物半导体器件及其制造方法
公开(公告)号：US08368067B2
公开(公告)日：2013-02-05
申请号：US12633577
申请日：2009-12-08
申请人： Hiroyuki Uchiyama , Tetsufumi Kawamura , Hironori Wakana
发明人： Hiroyuki Uchiyama , Tetsufumi Kawamura , Hironori Wakana
IPC分类号： H01L29/10
CPC分类号： H01L29/7869 , H01L21/02554 , H01L21/02565 , H01L21/02617 , H01L21/28291 , H01L27/10873 , H01L27/112 , H01L27/11206 , H01L27/1225 , H01L27/3262 , H01L51/5206
摘要： A phenomenon of change of a contact resistance between an oxide semiconductor and a metal depending on an oxygen content ratio in introduced gas upon depositing an oxide semiconductor film made of indium gallium zinc oxide, zinc tin oxide, or others in an oxide semiconductor thin-film transistor. A contact layer is formed with an oxygen content ratio of 10% or higher in a region from a surface, where the metal and the oxide semiconductor are contacted, down to at least 3 nm deep in depth direction, and a region to be a main channel layer is further formed with an oxygen content ratio of 10% or lower, so that a multilayered structure is formed, and both of ohmic characteristics to the electrode metal and reliability such as the suppression of threshold potential shift are achieved.
摘要翻译：在氧化物半导体薄膜中沉积由铟镓锌氧化物，氧化锌锡等制成的氧化物半导体膜时，导入气体中的氧含量比的氧化物半导体与金属之间的接触电阻发生变化的现象晶体管。在从金属和氧化物半导体接触的表面的区域的氧含量比为10％以上形成接触层，深度为深度至少3nm以下的区域进一步形成具有10％或更低的氧含量比的沟道层，从而形成多层结构，并且实现了与电极金属的欧姆特性和诸如抑制阈值电位移动之类的可靠性。

12. 发明申请

US20120280227A1 OXIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：氧化物半导体器件及其制造方法
公开(公告)号：US20120280227A1
公开(公告)日：2012-11-08
申请号：US13512062
申请日：2010-11-22
申请人： Hironori Wakana , Tetsufumi Kawamura , Hiroyuki Uchiyama , Kuniharu Fujii
发明人： Hironori Wakana , Tetsufumi Kawamura , Hiroyuki Uchiyama , Kuniharu Fujii
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7869 , H01L29/78696
摘要： Features are forming a gate electrode on an insulating substrate; forming a first semiconducting layer mainly composed of an indium oxide and having a film thickness of 5 nm or more onto the gate electrode interposing a gate insulating film; forming a second semiconducting layer mainly composed of zinc and tin oxides without containing indium and having a film thickness of 5 to 50 nm on the first semiconducting layer, and including a step of forming a source electrode and a drain electrode on the second semiconducting layer. In this manner, by combining the materials of the first semiconducting layer and the second semiconducting layer with each other, a semiconductor device with a reduced dependency on the film thickness of the semiconducting layer, little characteristic variations on a large area substrate is provided.
摘要翻译：特征是在绝缘基板上形成栅电极; 在栅绝缘膜上形成主要由氧化铟构成的膜厚为5nm以上的第一半导电层，在第一半导电层上形成主要由锌和锡氧化物组成的第二半导体层，其不含铟并且具有5至50nm的膜厚度，并且包括在第二半导体层上形成源电极和漏电极的步骤。以这种方式，通过将第一半导体层和第二半导体层的材料彼此组合，提供对半导体层的膜厚度的依赖性降低的半导体器件，在大面积衬底上几乎没有特征变化。

13. 发明申请

US20100330738A1 Oxide semiconductor target and manufacturing method of oxide semiconductor device by using the same 审中-公开
标题翻译：氧化物半导体靶和使用其的氧化物半导体器件的制造方法
公开(公告)号：US20100330738A1
公开(公告)日：2010-12-30
申请号：US12662305
申请日：2010-04-09
申请人： Hiroyuki Uchiyama , Hironori Wakana , Tetsufumi Kawamura , Fumi Kurita , Hideko Fukushima
发明人： Hiroyuki Uchiyama , Hironori Wakana , Tetsufumi Kawamura , Fumi Kurita , Hideko Fukushima
IPC分类号： H01L21/36 , C23C14/35 , C23C14/34 , H01L21/365
CPC分类号： H01L29/7869 , C04B35/453 , C04B35/457 , C04B2235/3284 , C04B2235/3293 , C04B2235/6585 , C04B2235/72 , C04B2235/722 , C04B2235/727 , C04B2235/77 , C23C14/086 , C23C14/3414 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L29/66969
摘要： An oxide semiconductor target of a ZTO (zinc tin complex oxide) type oxide semiconductor material of an appropriate (Zn/(Zn+Sn)) composition having high mobility and threshold potential stability and with less restriction in view of the cost and the resource and with less restriction in view of the process, and an oxide semiconductor device using the same, in which a sintered Zn tin complex oxide with a (Zn/(Zn+Sn)) composition of 0.6 to 0.8 is used as a target, the resistivity of the target itself is at a high resistance of 1 Ωcm or higher and, further, the total concentration of impurities is controlled to 100 ppm or less.
摘要翻译： ZTO（锌锡复合氧化物）型氧化物半导体材料的氧化物半导体靶，具有高迁移率和阈值电位稳定性的合适的（Zn /（Zn + Sn））组合物，考虑到成本和资源，限制少，考虑到该方法的限制较少，并且使用其中使用具有0.6至0.8（Zn /（Zn + Sn））组成的烧结Zn锡复合氧化物作为靶的氧化物半导体器件，其电阻率的目标本身的电阻为1Ω·cm以上的高电阻，另外将杂质的总浓度控制在100ppm以下。

14. 发明授权

US08139173B2 Liquid crystal display 有权
标题翻译：液晶显示器
公开(公告)号：US08139173B2
公开(公告)日：2012-03-20
申请号：US12216581
申请日：2008-07-08
申请人： Tetsufumi Kawamura , Takeshi Sato , Mutsuko Hatano , Mieko Matsumura
发明人： Tetsufumi Kawamura , Takeshi Sato , Mutsuko Hatano , Mieko Matsumura
IPC分类号： G02F1/133 , G02F1/1343
CPC分类号： G02F1/1368 , G02F1/136209 , G02F1/136227 , G02F2001/13613
摘要： A liquid crystal display, having an improved application of electric field to the molecules of liquid crystal, includes a substrate and a pixel array bonded to the surface of this substrate, and the pixel array includes at least a thin-film transistor and a pixel electrode connected with this thin-film transistor, and the pixel electrode is formed in a layer higher than the thin-film transistor in relation to the substrate.
摘要翻译：具有改善对液晶分子的电场应用的液晶显示器包括基板和与该基板的表面接合的像素阵列，像素阵列至少包括薄膜晶体管和像素电极与该薄膜晶体管连接，并且像素电极相对于衬底形成在比薄膜晶体管高的层中。

15. 发明授权

US08629451B2 Display device 有权
公开(公告)号：US08629451B2
公开(公告)日：2014-01-14
申请号：US13537462
申请日：2012-06-29
申请人： Tetsufumi Kawamura , Takeshi Sato , Mutsuko Hatano , Yoshiaki Toyota
发明人： Tetsufumi Kawamura , Takeshi Sato , Mutsuko Hatano , Yoshiaki Toyota
IPC分类号： H01L29/04 , H01L31/036
CPC分类号： H01L27/127 , H01L27/12 , H01L27/1225 , H01L27/124 , H01L29/7869
摘要： A display device for improving an aperture ratio of the pixel is provided. In the display device, a transparent oxide layer, an insulating film, and a conductive layer are sequentially stacked on a pixel region on a substrate, the conductive layer has a gate electrode of a thin film transistor connected to a gate signal line, and a region of the transparent oxide layer other than at least a channel region portion directly below the gate electrode is converted into an electrically conductive region, and a source signal line, a source region portion of the thin film transistor connected to the source signal line, a pixel electrode, and a drain region portion of the thin film transistor connected to the pixel electrode are formed from the conductive region.

16. 发明申请

US20120261668A1 DISPLAY DEVICE 有权
标题翻译：显示设备
公开(公告)号：US20120261668A1
公开(公告)日：2012-10-18
申请号：US13537462
申请日：2012-06-29
申请人： Tetsufumi Kawamura , Takeshi Sato , Mutsuko Hatano , Yoshiaki Toyota
发明人： Tetsufumi Kawamura , Takeshi Sato , Mutsuko Hatano , Yoshiaki Toyota
IPC分类号： H01L33/08
CPC分类号： H01L27/127 , H01L27/12 , H01L27/1225 , H01L27/124 , H01L29/7869
摘要： A display device for improving an aperture ratio of the pixel is provided. In the display device, a transparent oxide layer, an insulating film, and a conductive layer are sequentially stacked on a pixel region on a substrate, the conductive layer has a gate electrode of a thin film transistor connected to a gate signal line, and a region of the transparent oxide layer other than at least a channel region portion directly below the gate electrode is converted into an electrically conductive region, and a source signal line, a source region portion of the thin film transistor connected to the source signal line, a pixel electrode, and a drain region portion of the thin film transistor connected to the pixel electrode are formed from the conductive region.
摘要翻译：提供了一种用于提高像素的开口率的显示装置。在显示装置中，透明氧化物层，绝缘膜和导电层依次层叠在基板上的像素区域上，导电层具有与栅极信号线连接的薄膜晶体管的栅电极，透明氧化物层的除了栅电极正下方的沟道区域以外的透明氧化物层的区域被转换为导电区域，源极信号线，连接到源极信号线的薄膜晶体管的源极区域部分像素电极和连接到像素电极的薄膜晶体管的漏区部分由导电区域形成。

17. 发明授权

US07737517B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US07737517B2
公开(公告)日：2010-06-15
申请号：US12253257
申请日：2008-10-17
申请人： Tetsufumi Kawamura , Takeshi Sato , Mutsuko Hatano
发明人： Tetsufumi Kawamura , Takeshi Sato , Mutsuko Hatano
IPC分类号： H01L31/0232 , H01L31/103
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/41733
摘要： A display device includes a pixel including: a gate line; a gate insulating film; a substrate; a data line; a pixel electrode; a semiconductor layer formed on the gate line and the gate insulating film; a protective film formed on the data line, the pixel electrode, and the semiconductor layer; and a thin film transistor. A portion of the gate line also serves as a gate electrode of the thin film transistor. A portion of the data line also serves as a drain electrode of the thin film transistor. A portion of the pixel electrode also serves as a source electrode of the thin film transistor. The semiconductor layer is formed of an oxide semiconductor layer. The oxide semiconductor layer is directly connected to the drain electrode and the source electrode, and the data line and the pixel electrode are formed of different conductive films.
摘要翻译：显示装置包括：像素，包括：栅极线; 栅极绝缘膜; 底物; 数据线像素电极; 形成在栅极线和栅极绝缘膜上的半导体层; 形成在数据线上的保护膜，像素电极和半导体层; 和薄膜晶体管。栅极线的一部分也用作薄膜晶体管的栅电极。数据线的一部分也用作薄膜晶体管的漏电极。像素电极的一部分也用作薄膜晶体管的源电极。半导体层由氧化物半导体层形成。氧化物半导体层直接连接到漏电极和源电极，数据线和像素电极由不同的导电膜形成。

18. 发明申请

US20090040411A1 Liquid crystal display 有权
标题翻译：液晶显示器
公开(公告)号：US20090040411A1
公开(公告)日：2009-02-12
申请号：US12216581
申请日：2008-07-08
申请人： Tetsufumi Kawamura , Takeshi Sato , Mutsuko Hatano , Mieko Matsumura
发明人： Tetsufumi Kawamura , Takeshi Sato , Mutsuko Hatano , Mieko Matsumura
IPC分类号： G02F1/1368
CPC分类号： G02F1/1368 , G02F1/136209 , G02F1/136227 , G02F2001/13613
摘要： A liquid crystal display, having an improved application of electric field to the molecules of liquid crystal, includes a substrate and a pixel array bonded to the surface of this substrate, and the pixel array includes at least a thin-film transistor and a pixel electrode connected with this thin-film transistor, and the pixel electrode is formed in a layer higher than the thin-film transistor in relation to the substrate.
摘要翻译：具有改善对液晶分子的电场应用的液晶显示器包括基板和与该基板的表面接合的像素阵列，像素阵列至少包括薄膜晶体管和像素电极与该薄膜晶体管连接，并且像素电极相对于衬底形成在比薄膜晶体管高的层中。

19. 发明申请

US20080169469A1 Display device 有权
标题翻译：显示设备
公开(公告)号：US20080169469A1
公开(公告)日：2008-07-17
申请号：US12003462
申请日：2007-12-26
申请人： Tetsufumi Kawamura , Takeshi Sato , Mutsuko Hatano , Yoshiaki Toyota
发明人： Tetsufumi Kawamura , Takeshi Sato , Mutsuko Hatano , Yoshiaki Toyota
IPC分类号： H01L29/04
CPC分类号： H01L27/127 , H01L27/12 , H01L27/1225 , H01L27/124 , H01L29/7869
摘要： A display device for improving an aperture ratio of the pixel is provided. In the display device, a transparent oxide layer, an insulating film, and a conductive layer are sequentially stacked on a pixel region on a substrate, the conductive layer has a gate electrode of a thin film transistor connected to a gate signal line, and a region of the transparent oxide layer other than at least a channel region portion directly below the gate electrode is converted into an electrically conductive region, and a source signal line, a source region portion of the thin film transistor connected to the source signal line, a pixel electrode, and a drain region portion of the thin film transistor connected to the pixel electrode are formed from the conductive region.
摘要翻译：提供了一种用于提高像素的开口率的显示装置。在显示装置中，透明氧化物层，绝缘膜和导电层依次层叠在基板上的像素区域上，导电层具有与栅极信号线连接的薄膜晶体管的栅电极，透明氧化物层的除了栅电极正下方的沟道区域以外的透明氧化物层的区域被转换为导电区域，源极信号线，连接到源极信号线的薄膜晶体管的源极区域部分像素电极和连接到像素电极的薄膜晶体管的漏区部分由导电区域形成。

20. 发明授权

US08242505B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US08242505B2
公开(公告)日：2012-08-14
申请号：US12003462
申请日：2007-12-26
申请人： Tetsufumi Kawamura , Takeshi Sato , Mutsuko Hatano , Yoshiaki Toyota
发明人： Tetsufumi Kawamura , Takeshi Sato , Mutsuko Hatano , Yoshiaki Toyota
IPC分类号： H01L29/04 , H01L31/036
CPC分类号： H01L27/127 , H01L27/12 , H01L27/1225 , H01L27/124 , H01L29/7869
摘要： A display device for improving an aperture ratio of the pixel is provided. In the display device, a transparent oxide layer, an insulating film, and a conductive layer are sequentially stacked on a pixel region on a substrate, the conductive layer has a gate electrode of a thin film transistor connected to a gate signal line, and a region of the transparent oxide layer other than at least a channel region portion directly below the gate electrode is converted into an electrically conductive region, and a source signal line, a source region portion of the thin film transistor connected to the source signal line, a pixel electrode, and a drain region portion of the thin film transistor connected to the pixel electrode are formed from the conductive region.
摘要翻译：提供了一种用于提高像素的开口率的显示装置。在显示装置中，透明氧化物层，绝缘膜和导电层依次层叠在基板上的像素区域上，导电层具有与栅极信号线连接的薄膜晶体管的栅电极，透明氧化物层的除了栅电极正下方的沟道区域以外的透明氧化物层的区域被转换为导电区域，源极信号线，连接到源极信号线的薄膜晶体管的源极区域部分像素电极和连接到像素电极的薄膜晶体管的漏区部分由导电区域形成。

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