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    • 11. 发明申请
    • Surface acoustic wave device
    • 表面声波装置
    • US20070096592A1
    • 2007-05-03
    • US10595237
    • 2004-08-06
    • Michio KadotaTakeshi Nakao
    • Michio KadotaTakeshi Nakao
    • H03H9/25
    • H03H9/02559H03H3/08
    • A surface acoustic wave device includes a piezoelectric substrate made of LiNbO3 having an electromechanical coupling coefficient k whose square is at least about 0.025, at least one electrode that is made of a metal whose density is greater than that of Al or an alloy primarily including the metal or that is composed of laminated films made of a metal whose density is greater than that of Al or an alloy primarily including the metal and another metal, the electrode being disposed on the piezoelectric substrate, a first insulating layer disposed in a region other than a region where the at least one electrode is disposed, the thickness of the first insulating layer being substantially equal to that of the electrode, and a second insulating layer covering the electrode and the first insulating layer. The density of the electrode is at least about 1.5 times greater than that of the first insulating layer.
    • 表面声波装置包括由LiNbO 3 3制成的压电基片,其具有至少约0.025的方形的机电耦合系数k,至少一个由密度高于其的金属制成的电极。 的Al或主要包含金属的合金,或由密度大于Al的金属或主要包含金属的合金的金属和其它金属构成的层压膜构成,所述电极设置在压电基板上,第一 绝缘层,其设置在除设置所述至少一个电极的区域以外的区域中,所述第一绝缘层的厚度与所述电极的厚度基本相等;以及覆盖所述电极和所述第一绝缘层的第二绝缘层。 电极的密度比第一绝缘层的密度高至少约1.5倍。
    • 18. 发明授权
    • Surface acoustic wave device
    • 表面声波装置
    • US07569972B2
    • 2009-08-04
    • US12234836
    • 2008-09-22
    • Kenji NishiyamaTakeshi NakaoMichio Kadota
    • Kenji NishiyamaTakeshi NakaoMichio Kadota
    • H01L41/08
    • H03H9/02559
    • A surface acoustic wave device utilizing a Rayleigh wave includes a LiNbO3 substrate having Euler angles of (0°±5°, θ±5°, 0°±10°), an electrode which is disposed on the LiNbO3 substrate and which includes an IDT electrode primarily including Au, a first silicon oxide film disposed in a region other than the region in which the above-described electrode is disposed, the first silicon oxide film having a film thickness substantially equal to the thickness of the above-described electrode, and a second silicon oxide film arranged to cover the electrode and the first silicon oxide film, wherein the film thickness of the electrode is in the range of about 0.062λ to about 0.14λ, where λ represents the wavelength of a surface acoustic wave, and θ of the above-described Euler angles of (0°±5°, θ±5°, 0°±10°) is in the range satisfying the following Formula (1): θ=31.72−206.92×exp(−1×TAu/0.0138)  Formula (1) where TAu is a value of Au electrode film thickness normalized with the wavelength λ.
    • 利用瑞利波的表面声波装置包括具有欧拉角(0°±5°,θ±5°,0°±10°)的LiNbO 3基板,设置在LiNbO 3基板上的电极,其包括IDT 主要包括Au的电极,设置在除了上述电极的区域以外的区域中的第一氧化硅膜,第一氧化硅膜的膜厚度基本上等于上述电极的厚度,以及 布置成覆盖电极和第一氧化硅膜的第二氧化硅膜,其中电极的膜厚度在约0.062λ至约0.14λ的范围内,其中λ表示声表面波的波长,θ表示 (0°±5°,θ±5°,0°±10°)的上述欧拉角在满足下列公式(1)的范围内:<?在线公式描述=“In- 线公式“end =”lead“?> theta = 31.72-206.92xexp(-1×TAu / 0.0138)式(1)<?in-line-formula description =“In-line Formulas”end =“tail”?>其中TAu是用波长λ标准化的Au电极膜厚度的值。
    • 19. 发明申请
    • ACOUSTIC WAVE RESONATOR
    • 声音波共振器
    • US20080309192A1
    • 2008-12-18
    • US12203393
    • 2008-09-03
    • Takeshi NakaoYasuharu NakaiMichio Kadota
    • Takeshi NakaoYasuharu NakaiMichio Kadota
    • H03H9/25H03H9/15
    • H03H9/02818H03H9/02992H03H9/1452
    • In an acoustic wave resonator, an IDT electrode is provided on a piezoelectric substrate. The IDT electrode is apodization-weighted such that a plurality of maximum values of cross widths are provided in acoustic wave propagation directions. Alternatively, in apodization weighting, weighting is applied such that at least one of a pair of envelopes located at outer side portions of the IDT electrode in directions substantially perpendicular to acoustic wave propagation directions includes a plurality of angled envelope portions angled from a central portion of the IDT electrode toward an outer side portion of the IDT electrode in a direction substantially perpendicular to the acoustic wave propagation directions.
    • 在声波谐振器中,在压电基板上设置有IDT电极。 IDT电极被变迹加权,使得在声波传播方向上提供多个最大交叉宽度值。 或者,在变迹加权中,施加加权,使得位于IDT电极的外侧部分的大致垂直于声波传播方向的方向上的一对包络中的至少一个包括多个成角度的包络部分,该包络部分从 IDT电极朝向与声波传播方向大致正交的方向朝向IDT电极的外侧部分。