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11. 发明申请

US20050093439A1 Organic electroluminescent device and fabrication method thereof 有权
标题翻译：有机电致发光器件及其制造方法
公开(公告)号：US20050093439A1
公开(公告)日：2005-05-05
申请号：US10953061
申请日：2004-09-30
申请人： Gaku Harada , Hisao Haku
发明人： Gaku Harada , Hisao Haku
IPC分类号： H05B33/04 , H01L27/32 , H01L51/00 , H01L51/30 , H01L51/50 , H01L51/52 , H05B33/10 , H05B33/12 , H05B33/26 , H01J1/62
CPC分类号： H01L51/5253 , H01L27/322 , H01L51/0059 , H01L51/0078 , H01L51/0081 , H01L51/5221 , H01L51/5246
摘要： First, a plurality of organic EL elements are formed on a substrate. The electron injection electrode of an organic EL element has a stacked layer structure of a metal thin film and a metal oxide film. A sealing agent is provided on the upper portion and outer periphery of the plurality of organic EL elements on the substrate, so as to surround the entire perimeter of the plurality of organic EL elements. A sealing plate is bonded to the upper face side of the sealing agent with a color filter sandwiched therebetween. As the sealing agent, a resin adhesive is used from which a solution extracted in accordance with the SEMI standard G29-1296 after curing has a pH of not less than four nor more than ten. It is preferable that the resin adhesive has a light transmittance of 70% or more on average in the wavelength range of 450 nm to 800 nm, with the variation range of the light transmittance in the wavelength range of 450 nm to 800 nm being not more than ±10% for the average light transmittance.
摘要翻译：首先，在基板上形成多个有机EL元件。有机EL元件的电子注入电极具有金属薄膜和金属氧化物膜的叠层结构。在基板上的多个有机EL元件的上部和外周设置密封剂，以围绕多个有机EL元件的整个周边。密封板与夹在其间的滤色器的上表面侧接合。作为密封剂，使用树脂粘合剂，其中固化后根据SEMI标准G29-1296提取的溶液具有不小于4或不超过10的pH。优选树脂粘合剂在450nm〜800nm的波长范围内的透光率平均为70％以上，450nm〜800nm的波长范围的透光率的变化范围不大比平均透光率的±10％。

12. 发明授权

US4719123A Method for fabricating periodically multilayered film 失效
标题翻译：定期制造多层膜的方法
公开(公告)号：US4719123A
公开(公告)日：1988-01-12
申请号：US891758
申请日：1986-07-31
申请人： Hisao Haku , Yukio Nakashima , Kaneo Watanabe , Tsugufumi Matsuoka
发明人： Hisao Haku , Yukio Nakashima , Kaneo Watanabe , Tsugufumi Matsuoka
IPC分类号： H01L21/205 , H01L31/0352 , B05D3/06
CPC分类号： B82Y20/00 , H01L21/02422 , H01L21/02425 , H01L21/02447 , H01L21/0245 , H01L21/02529 , H01L21/02532 , H01L21/02579 , H01L21/0262 , H01L31/035245 , Y10S438/931
摘要： A method for fabricating a periodically multilayered film having a plurality of amorphous thin layers of different kinds stacked periodically is performed by forming at least one kind of the layers in the stack by a photo CVD method, whereby a more definite periodicity in the composition of the lattice and fewer defects are achieved.
摘要翻译：通过利用光CVD法在堆叠中形成至少一种层来制造具有周期性地堆叠的多个不同种类的非晶薄层的周期性多层膜的方法，由此，实现了晶格和更少的缺陷。

13. 发明授权

US06617785B2 Electroluminescence display unit and method of fabricating the same 有权
标题翻译：电致发光显示单元及其制造方法
公开(公告)号：US06617785B2
公开(公告)日：2003-09-09
申请号：US09738882
申请日：2000-12-18
申请人： Kenichi Shibata , Tatsuro Usuki , Kiyoshi Yoneda , Haruhisa Hashimoto , Hisao Haku
发明人： Kenichi Shibata , Tatsuro Usuki , Kiyoshi Yoneda , Haruhisa Hashimoto , Hisao Haku
IPC分类号： H05B3314
CPC分类号： G09F9/33 , H01L27/3211
摘要： A large-sized organic EL display unit is formed by bonding four small display panels on junction surfaces so that the pitch between emission parts adjacent to each other over the small display panels is equal to the pitch between the emission parts in the small display panels, so that the junction between the adjacent ones of the small electroluminescence display panels is inconspicuous.
摘要翻译：通过将四个小显示面板接合在接合面上形成大尺寸有机EL显示单元，使得小型显示面板之间彼此相邻的排出部件之间的间距等于小型显示面板中的排出部件之间的间距，使得相邻的小电致发光显示面板之间的接合不显眼。

14. 发明授权

US4843451A Photovoltaic device with O and N doping 失效
标题翻译：具有O和N掺杂的光伏器件
公开(公告)号：US4843451A
公开(公告)日：1989-06-27
申请号：US228796
申请日：1988-07-29
申请人： Kaneo Watanabe , Tsugufumi Matsuoka , Yukio Nakashima , Hisao Haku
发明人： Kaneo Watanabe , Tsugufumi Matsuoka , Yukio Nakashima , Hisao Haku
IPC分类号： H01L31/04 , H01L31/0288 , H01L31/075 , H01L31/20
CPC分类号： H01L31/202 , H01L31/0288 , H01L31/075 , H01L31/204 , Y02E10/548 , Y02P70/521
摘要： A photovoltaic device has at least one set of amorphous semiconductor layers forming a p-i-n junction structure, wherein at least one of the semiconductor layers having a given thickness, is doped with nitrogen and oxygen to a depth forming at least part of said given thickness. Such a photovoltaic device is fabricated by depositing on a substrate at least one set of amorphous semiconductor layers which form a p-i-n junction structure, and by doping at least one of the layers with nitrogen and oxygen to a depth forming at least part of the thickness of the doped layer.
摘要翻译：光伏器件具有形成p-i-n结结构的至少一组非晶半导体层，其中具有给定厚度的至少一个半导体层掺杂有氮和氧至形成所述给定厚度的至少一部分的深度。这样的光伏器件通过在衬底上沉积至少一组形成pin结结构的非晶半导体层，并且通过用氮和氧掺杂至少一个层至深度形成至少一部分厚度的掺杂层。

15. 发明授权

US4755483A Method for producing semiconductor device with p-type amorphous silicon carbide semiconductor film formed by photo-chemical vapor deposition 失效
标题翻译：用于通过光化学气相沉积形成的具有p型非晶碳化硅半导体膜的半导体器件的制造方法
公开(公告)号：US4755483A
公开(公告)日：1988-07-05
申请号：US888474
申请日：1986-07-21
申请人： Hisao Haku , Yukio Nakashima , Tsugufumi Matsuoka , Kaneo Watanabe
发明人： Hisao Haku , Yukio Nakashima , Tsugufumi Matsuoka , Kaneo Watanabe
IPC分类号： H01L21/04 , H01L21/205
CPC分类号： H01L21/0445 , Y10S438/931
摘要： A method for producing a semiconductor device uses trimethyl boron (B(CH.sub.3).sub.3) of triethyl boron (B(C.sub.2 H.sub.5).sub.3) or a mixture thereof as a p-type dopant and/or a band gap widening source material gas in a process for forming a p-type amorphous semiconductor film. Accordingly, the quantity and the number of different gases which are used can be reduced and also the photoconductivity and dark conductivity can be improved, whereby a semiconductor device suitable for photovoltaic cells, photo sensors and the like using a p-type amorphous semiconductor film having a wide optical band gap can be produced.
摘要翻译：半导体器件的制造方法使用三乙基硼（B（C 2 H 5）3）的三甲基硼（B（CH 3）3））或其混合物作为p型掺杂剂和/或带隙加宽源材料气体用于形成p型非晶半导体膜。因此，可以减少使用的不同气体的量和数量，并且还可以提高光电导率和暗电导率，由此适用于使用具有p型非晶半导体膜的光伏电池，光电传感器等的半导体器件，其具有可以产生宽的光学带隙。

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