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11. 发明申请

US20050124123A1 Fabrication method for semiconductor device and manufacturing apparatus for the same 有权
标题翻译：半导体装置及其制造装置的制造方法
公开(公告)号：US20050124123A1
公开(公告)日：2005-06-09
申请号：US10980232
申请日：2004-11-04
申请人： Takaharu Itani , Takayuki Ito , Kyoichi Suguro
发明人： Takaharu Itani , Takayuki Ito , Kyoichi Suguro
IPC分类号： H01L21/265 , H01L21/324 , H01L21/336 , H01L29/78 , F27B3/20 , F27B7/34 , F27B9/36 , H01L21/26 , H01L21/42 , H01L21/477
CPC分类号： H01L21/26533 , H01L21/324 , H01L29/6659
摘要： A shallow p-n junction diffusion layer having a high activation rate of implanted ions, low resistivity, and a controlled leakage current is formed through annealing. Annealing after impurities have been doped is carried out through light irradiation. Those impurities are activated by annealing at least twice through light irradiation after doping impurities to a semiconductor substrate 11. The light radiations are characterized by usage of a W halogen lamp RTA or a flash lamp FLA except for the final light irradiation using a flash lamp FLA. Impurity diffusion maybe controlled to a minimum, and crystal defects, which have developed in an impurity doping process, may be sufficiently reduced when forming ion implanted layers in a source and a drain extension region of the MOSFET or ion implanted layers in a source and a drain region.
摘要翻译：通过退火形成具有注入离子的高激活速率，低电阻率和受控的漏电流的浅p-n结扩散层。通过光照射进行杂质掺杂后的退火。这些杂质通过在将杂质掺杂到半导体衬底11之后通过光照射退火至少两次来激活。光辐射的特征在于使用W卤素灯RTA或闪光灯FLA，除了使用闪光灯FLA的最终光照射。杂质扩散可以被控制到最小，并且当在MOSFET的源极和漏极延伸区域中形成离子注入层时，在杂质掺杂过程中已经发展出的晶体缺陷可以被充分地减小，或者源中的离子注入层和漏区。

12. 发明授权

US07084068B2 Annealing furnace, manufacturing apparatus, annealing method and manufacturing method of electronic device 失效
标题翻译：退火炉，制造装置，退火方法和电子装置的制造方法
公开(公告)号：US07084068B2
公开(公告)日：2006-08-01
申请号：US10661564
申请日：2003-09-15
申请人： Kyoichi Suguro , Takayuki Ito , Takaharu Itani
发明人： Kyoichi Suguro , Takayuki Ito , Takaharu Itani
IPC分类号： H01L21/302 , H01L21/461 , C23C16/00
CPC分类号： H01L21/28185 , H01L21/02046 , H01L21/02233 , H01L21/02247 , H01L21/28202 , H01L21/28211 , H01L21/28238 , H01L21/3144 , H01L21/32 , H01L21/67115 , H01L21/67155 , H01L21/823462 , H01L29/513 , H01L29/518
摘要： An annealing furnace, includes a processing chamber configured to store a substrate; a susceptor located in the processing chamber so as to load the substrate and having an auxiliary heater for heating the substrate at 650° C. or less, the susceptor having a surface being made of quartz; a gas supply system configured to supply a gas required for a thermal processing on the substrate in parallel to a surface of the substrate; a transparent window located on an upper part of the processing chamber facing the susceptor; and a main heater configured to irradiate a pulsed light on the surface of the substrate to heat the substrate from the transparent window, the pulsed light having a pulse duration of approximately 0.1 ms to 200 ms and having a plurality of emission wavelengths.
摘要翻译：一种退火炉，包括：配置成存储基板的处理室; 位于所述处理室中的基座，以便加载所述基板并具有用于在650℃以下加热所述基板的辅助加热器，所述基座具有由石英制成的表面; 气体供给系统，被配置为平行于所述基板的表面在所述基板上供给热处理所需的气体; 位于处理室的与感受器相对的上部的透明窗口; 以及主加热器，其被配置为在所述基板的表面上照射脉冲光以从所述透明窗加热所述基板，所述脉冲光具有约0.1ms至200ms的脉冲持续时间并且具有多个发射波长。

13. 发明授权

US08211785B2 Fabrication method for semiconductor device including flash lamp annealing processes 有权
标题翻译：包括闪光灯退火工艺的半导体器件的制造方法
公开(公告)号：US08211785B2
公开(公告)日：2012-07-03
申请号：US11819776
申请日：2007-06-29
申请人： Takaharu Itani , Takayuki Ito , Kyoichi Suguro
发明人： Takaharu Itani , Takayuki Ito , Kyoichi Suguro
IPC分类号： H01L21/425
CPC分类号： H01L21/26533 , H01L21/324 , H01L29/6659
摘要： A shallow p-n junction diffusion layer having a high activation rate of implanted ions, low resistivity, and a controlled leakage current is formed through annealing. Annealing after impurities have been doped is carried out through light irradiation. Those impurities are activated by annealing at least twice through light irradiation after doping impurities to a semiconductor substrate 11. The light radiations are characterized by usage of a W halogen lamp RTA or a flash lamp FLA except for the final light irradiation using a flash lamp FLA. Impurity diffusion may be controlled to a minimum, and crystal defects, which have developed in an impurity doping process, may be sufficiently reduced when forming ion implanted layers in a source and a drain extension region of the MOSFET or ion implanted layers in a source and a drain region.
摘要翻译：通过退火形成具有注入离子的高激活速率，低电阻率和受控的漏电流的浅p-n结扩散层。通过光照射进行杂质掺杂后的退火。这些杂质通过在将杂质掺杂到半导体衬底11之后通过光照射退火至少两次来激活。光辐射的特征在于使用W卤素灯RTA或闪光灯FLA，除了使用闪光灯FLA的最终光照射。杂质扩散可以被控制到最小，并且当在源的源极和漏极延伸区域中形成离子注入层时，或者在源中的离子注入层形成离子注入层时，杂质掺杂过程中已经形成的晶体缺陷可以被充分地减小，以及漏极区域。

14. 发明申请

US20070232083A1 Apparatus and method for manufacturing semiconductor devices 失效
标题翻译：用于制造半导体器件的装置和方法
公开(公告)号：US20070232083A1
公开(公告)日：2007-10-04
申请号：US11727519
申请日：2007-03-27
申请人： Takaharu Itani
发明人： Takaharu Itani
IPC分类号： H01L21/00
CPC分类号： H01L21/67115 , H01L21/324 , H01L21/823814 , H01L29/6659
摘要： An apparatus for manufacturing a semiconductor device includes a treatment chamber in which a working substrate is disposed; a plurality of lamps provided above the treatment chamber; and a reflector provided behind the lamps relative to a direction towards the working substrate, spatially controlling an in-plane distribution of reflection rate of light beams from the lamps, and irradiating the working substrate with light from the lamps.
摘要翻译：一种用于制造半导体器件的设备，包括：处理室，其中设置有工作基板; 设置在处理室上方的多个灯; 以及设置在灯之后的反射器相对于朝向工作基板的方向的反射器，空间地控制来自灯的光束的反射率的面内分布，以及用来自灯的光照射工作基板。

15. 发明申请

US20100190336A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
标题翻译：半导体器件制造方法
公开(公告)号：US20100190336A1
公开(公告)日：2010-07-29
申请号：US12693093
申请日：2010-01-25
申请人： Takaharu Itani , Koji Matsuo , Kazuhiko Nakamura
发明人： Takaharu Itani , Koji Matsuo , Kazuhiko Nakamura
IPC分类号： H01L21/285
CPC分类号： H01L21/28518 , H01L29/665 , H01L29/66575 , H01L29/78
摘要： A semiconductor device manufacturing method has conducting first heating processing at a first heating temperature in an inert atmosphere under a first pressure in a first process chamber to silicide an upper part of the source-drain diffusion layer and form a silicide film; conducting second heating processing at a second heating temperature in an oxidizing atmosphere under a second pressure in a second process chamber to selectively oxidize at least a surface of the metal film on the element isolating insulation film and form a metal oxide film; conducting third heating processing at a third heating temperature which is higher than the first heating temperature and the second heating temperature in an atmosphere in a third process chamber to increase a concentration of silicon in the silicide film; and selectively removing the metal oxide film and an unreacted part of the metal film on the element isolating insulation film.
摘要翻译：半导体器件制造方法在第一处理室中在第一压力下在惰性气氛中在第一加热温度下进行第一加热处理，以硅化源极 - 漏极扩散层的上部并形成硅化物膜; 在第二处理室中在第二压力的氧化气氛中在第二加热温度下进行第二加热处理，以选择性地氧化元件隔离绝缘膜上的金属膜的至少一个表面，并形成金属氧化物膜; 在第三处理室的气氛中，在高于第一加热温度和第二加热温度的第三加热温度下进行第三加热处理，以增加硅化物膜中硅的浓度; 并且在元件隔离绝缘膜上选择性地除去金属氧化物膜和金属膜的未反应部分。

16. 发明授权

US06905983B2 Apparatus and method for manufacturing semiconductor devices, and semiconductor device 失效
标题翻译：用于制造半导体器件的装置和方法以及半导体器件
公开(公告)号：US06905983B2
公开(公告)日：2005-06-14
申请号：US10395230
申请日：2003-03-25
申请人： Takaharu Itani
发明人： Takaharu Itani
IPC分类号： H01L21/265 , H01L21/00 , H01L21/26 , H01L21/324 , H01L21/336 , H01L31/0328
CPC分类号： H01L21/324 , H01L21/67115 , H01L29/66568
摘要： An apparatus of manufacturing a semiconductor device is disclosed which comprises at least one heat/light source opposing at least one major surface of a to-be-processed substrate, the heat/light source emitting light rays with a heating function onto the major surface of the to-be-processed substrate, and at least one light intensity adjusting member interposed between the heat/light source and the to-be-processed substrate, the light intensity adjusting member being made of a material which can pass therethrough the light rays, the light intensity adjusting member adjusting, to a substantially predetermined value, an intensity of the light rays at the major surface of the to-be-processed substrate.
摘要翻译：公开了一种制造半导体器件的装置，其包括至少一个与待处理衬底的至少一个主表面相对的热/光源，所述热/光源发射具有加热功能的光线到主要表面上待处理衬底和插入在热/光源和被处理衬底之间的至少一个光强度调节构件，光强度调节构件由能够穿过其的光的材料制成，光强度调节部件将被处理基板的主表面的光线强度调整为基本上为规定值。

17. 发明申请

US20090137107A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20090137107A1
公开(公告)日：2009-05-28
申请号：US12323977
申请日：2008-11-26
申请人： Takaharu Itani
发明人： Takaharu Itani
IPC分类号： H01L21/283
CPC分类号： H01L21/28518 , H01L21/268 , H01L21/28052 , H01L21/823418 , H01L21/823437 , H01L21/823475
摘要： A method of manufacturing a semiconductor device according to an embodiment of the invention includes forming patterns on a substrate, depositing a light absorption layer on the patterns, processing the light absorption layer to form a first region which includes a first type of pattern included in the patterns and is coated with the light absorption layer having a first thickness, a second region which includes a second type of pattern included in the patterns and is coated with the light absorption layer having a second thickness thinner than the first thickness, and a third region which includes a third type of pattern included in the patterns and is coated with the light absorption layer having a third thickness thinner than the second thickness, and annealing the substrate by radiating light on the substrate.
摘要翻译：根据本发明的实施例的制造半导体器件的方法包括在衬底上形成图案，在图案上沉积光吸收层，处理光吸收层以形成第一区域，该第一区域包括第一类型并且涂覆有具有第一厚度的光吸收层，第二区域，其包括包含在图案中的第二类型图案，并且涂覆有具有比第一厚度薄的第二厚度的光吸收层，以及第三区域其包括图案中包括的第三类型图案，并且涂覆有具有比第二厚度薄的第三厚度的光吸收层，并且通过在基板上照射光使基板退火。

18. 发明授权

US5246789A AC powder type EL panel and method of manufacturing the same 失效
标题翻译： AC粉末型EL面板及其制造方法
公开(公告)号：US5246789A
公开(公告)日：1993-09-21
申请号：US822673
申请日：1992-01-21
申请人： Takaharu Itani , Masaru Nikaido , Hideki Yamaguchi
发明人： Takaharu Itani , Masaru Nikaido , Hideki Yamaguchi
IPC分类号： G09F9/33 , H05B33/04 , H05B33/10 , H05B33/26
CPC分类号： G09F9/33 , H05B33/04 , H05B33/10 , H05B33/26
摘要： An AC powder type EL panel includes an AC powder type EL element, thermoplastic adhesive layers formed on all surfaces of the AC powder type EL element, and a pair of protective films adhered to cover substantially the entire surfaces of the thermoplastic adhesive layers and having end portions to be fused to each other to seal the AC powder type EL element. A thickness ratio of the protective film to the thermoplastic adhesive layer is within the range of 5:1 to 2:1. Since the thermocompression-bonded end portions of the thermoplastic adhesive layers having poor moisture barrier properties are not exposed between the protective films at the end portions of the AC powder type EL panel, penetration of external moisture into the panel can be effectively prevented.
摘要翻译：交流粉末型EL面板包括AC粉末型EL元件，在AC粉末型EL元件的所有表面上形成的热塑性粘合剂层，以及一对保护膜，其粘附到基本上覆盖热塑性粘合剂层的整个表面并具有末端彼此熔合的部分以密封AC粉末型EL元件。保护膜与热塑性粘合剂层的厚度比在5:1〜2:1的范围内。由于在AC粉末型EL面板的端部的保护膜之间没有露出具有差的防潮性的热塑性粘合剂层的热压粘合端部，因此可以有效地防止外部水分渗透到面板中。

19. 发明授权

US08211796B2 Semiconductor device manufacturing method 有权
标题翻译：半导体器件制造方法
公开(公告)号：US08211796B2
公开(公告)日：2012-07-03
申请号：US13282494
申请日：2011-10-27
申请人： Takaharu Itani , Koji Matsuo , Kazuhiko Nakamura
发明人： Takaharu Itani , Koji Matsuo , Kazuhiko Nakamura
IPC分类号： H01L21/44
CPC分类号： H01L21/28518 , H01L29/665 , H01L29/66575 , H01L29/78
摘要： A semiconductor device manufacturing method has conducting first heating processing at a first heating temperature in an inert atmosphere under a first pressure in a first process chamber to silicide an upper part of the source-drain diffusion layer and form a silicide film; conducting second heating processing at a second heating temperature in an oxidizing atmosphere under a second pressure in a second process chamber to selectively oxidize at least a surface of the metal film on the element isolating insulation film and form a metal oxide film; conducting third heating processing at a third heating temperature which is higher than the first heating temperature and the second heating temperature in an atmosphere in a third process chamber to increase a concentration of silicon in the silicide film; and selectively removing the metal oxide film and an unreacted part of the metal film on the element isolating insulation film.
摘要翻译：半导体器件制造方法在第一处理室中在第一压力下在惰性气氛中在第一加热温度下进行第一加热处理，以硅化源极 - 漏极扩散层的上部并形成硅化物膜; 在第二处理室中在第二压力的氧化气氛中在第二加热温度下进行第二加热处理，以选择性地氧化元件隔离绝缘膜上的金属膜的至少一个表面，并形成金属氧化物膜; 在第三处理室的气氛中，在高于第一加热温度和第二加热温度的第三加热温度下进行第三加热处理，以增加硅化物膜中硅的浓度; 并且在元件隔离绝缘膜上选择性地除去金属氧化物膜和金属膜的未反应部分。

20. 发明申请

US20120040526A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD 有权
标题翻译：半导体器件制造方法
公开(公告)号：US20120040526A1
公开(公告)日：2012-02-16
申请号：US13282494
申请日：2011-10-27
申请人： Takaharu Itani , Koji Matsuo , Kazuhiko Nakamura
发明人： Takaharu Itani , Koji Matsuo , Kazuhiko Nakamura
IPC分类号： H01L21/3205
CPC分类号： H01L21/28518 , H01L29/665 , H01L29/66575 , H01L29/78
摘要： A semiconductor device manufacturing method has conducting first heating processing at a first heating temperature in an inert atmosphere under a first pressure in a first process chamber to silicide an upper part of the source-drain diffusion layer and form a silicide film; conducting second heating processing at a second heating temperature in an oxidizing atmosphere under a second pressure in a second process chamber to selectively oxidize at least a surface of the metal film on the element isolating insulation film and form a metal oxide film; conducting third heating processing at a third heating temperature which is higher than the first heating temperature and the second heating temperature in an atmosphere in a third process chamber to increase a concentration of silicon in the silicide film; and selectively removing the metal oxide film and an unreacted part of the metal film on the element isolating insulation film.
摘要翻译：半导体器件制造方法在第一处理室中在第一压力下在惰性气氛中在第一加热温度下进行第一加热处理，以硅化源极 - 漏极扩散层的上部并形成硅化物膜; 在第二处理室中在第二压力的氧化气氛中在第二加热温度下进行第二加热处理，以选择性地氧化元件隔离绝缘膜上的金属膜的至少一个表面，并形成金属氧化物膜; 在第三处理室的气氛中，在高于第一加热温度和第二加热温度的第三加热温度下进行第三加热处理，以增加硅化物膜中硅的浓度; 并且在元件隔离绝缘膜上选择性地除去金属氧化物膜和金属膜的未反应部分。

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