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11. 发明授权

US06566261B2 Semiconductor device and method of manufacturing the same 失效
公开(公告)号：US06566261B2
公开(公告)日：2003-05-20
申请号：US09946601
申请日：2001-09-06
申请人： Hiroshi Ikegami , Rempei Nakata , Takashi Yoda , Nobuo Hayasaka , Yoshimi Hisatsune
发明人： Hiroshi Ikegami , Rempei Nakata , Takashi Yoda , Nobuo Hayasaka , Yoshimi Hisatsune
IPC分类号： H01L2144
CPC分类号： H01L23/53238 , H01L21/0217 , H01L21/02274 , H01L21/02307 , H01L21/02315 , H01L21/3122 , H01L21/76838 , H01L24/11 , H01L2224/13099 , H01L2224/45144 , H01L2224/45147 , H01L2924/00011 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/04953 , H01L2924/12042 , H01L2924/19043 , H01L2924/30105 , Y10S438/959 , H01L2924/00 , H01L2924/01005 , H01L2924/01004 , H01L2924/00014
摘要： There is provided a semiconductor device including a semiconductor substrate and a conductive layer above the semiconductor substrate, wherein the conductive layer contains copper, a surface region of the conductive layer contains at least one of C—H bonds and C—C bonds, and a total amount of C atoms forming the C—H bonds and C atoms forming the C—C bonds in the surface region is 30 atomic % or more of a whole amount of elements in the surface region.

12. 发明授权

US06508578B2 Indication lamp 失效
标题翻译：指示灯
公开(公告)号：US06508578B2
公开(公告)日：2003-01-21
申请号：US09876804
申请日：2001-06-07
申请人： Takashi Yoda , Kunio Toyota
发明人： Takashi Yoda , Kunio Toyota
IPC分类号： F21S1002
CPC分类号： G09F13/08 , G09F13/04 , Y10S362/80 , Y10S362/812
摘要： An indication lamp for, for instance, aircraft passenger cabins comprising light sources housed in lamp chambers defined by a housing and a front cover. Translucent indication portions of the shapes indicative of non-smoking and fasten-seatbelt signs in red, for instance, are formed in the front cover; and the light sources, each comprising a set of light emitting diodes of different colors, such as green and red, are installed behind the translucent indication portions so that each light source emits a mixture of colors that is similar to an incandescent light, thus illuminating the sings with an enhanced visibility.
摘要翻译：用于例如飞机乘客舱的指示灯，其包括容纳在由壳体和前盖限定的灯室中的光源。例如，在前盖中形成表示红色的非吸烟和紧固安全带标志的形状的半透明指示部分; 并且每个包括一组不同颜色的发光二极管（例如绿色和红色）的光源被安装在半透明指示部分的后面，使得每个光源发射类似于白炽灯的颜色的混合物，从而照亮歌声增强了知名度。

13. 发明授权

US07202168B2 Method of producing semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US07202168B2
公开(公告)日：2007-04-10
申请号：US11136494
申请日：2005-05-25
申请人： Hiroshi Ikenoue , Hisashi Kaneko , Masaaki Hatano , Soichi Yamashita , Takashi Yoda , Makoto Sekine
发明人： Hiroshi Ikenoue , Hisashi Kaneko , Masaaki Hatano , Soichi Yamashita , Takashi Yoda , Makoto Sekine
IPC分类号： H01L21/44
CPC分类号： H01L21/76862 , H01L21/76807 , H01L21/76831 , H01L21/76846 , H01L21/76873
摘要： A method of producing a semiconductor device according to an aspect of the present invention comprises forming a seed film of Cu on a substrate; polycrystallizing the seed film formed on the substrate; and forming a plated film of Cu on the polycrystallized seed film by electrolytic plating.
摘要翻译：根据本发明的一个方面的制造半导体器件的方法包括在衬底上形成Cu的种子膜; 使形成在基板上的种子膜多晶化; 并通过电解电镀在多晶种子膜上形成Cu的镀膜。

14. 发明授权

US06938638B2 Gas circulating-processing apparatus 失效
标题翻译：气体循环处理装置
公开(公告)号：US06938638B2
公开(公告)日：2005-09-06
申请号：US10026566
申请日：2001-12-27
申请人： Hiroshi Kubota , Rempei Nakata , Naruhiko Kaji , Itsuko Sakai , Takashi Yoda
发明人： Hiroshi Kubota , Rempei Nakata , Naruhiko Kaji , Itsuko Sakai , Takashi Yoda
IPC分类号： G05D7/03 , B08B5/00 , B08B9/027 , F17D1/04 , H01L21/00
CPC分类号： G05D7/03 , Y10S438/905 , Y10S438/906 , Y10T137/0379 , Y10T137/0396 , Y10T137/0419 , Y10T137/4245 , Y10T137/4259 , Y10T137/6606 , Y10T137/85954 , Y10T137/86083 , Y10T137/86139
摘要： A gas-circulating processing apparatus which comprises a processing chamber, a gas feeding piping, a gas supply piping, a first exhaust mechanism discharging a gas from the processing chamber, a second exhaust mechanism discharging a portion of a gas discharged from the first exhaust mechanism, a back pressure adjusting mechanism interposed between the first exhaust mechanism and the second exhaust mechanism to adjust a back pressure of the first exhaust mechanism, and a gas circulating piping which is configured to combine another portion of the gas that has been discharged from the first exhaust mechanism with a processing gas supplied from the gas supply piping, wherein the gas feeding piping has a larger inner diameter than that of the gas supply, or the processing gas is introduced into the first exhaust mechanism, or a first heater is provided to heat at least part of the circulating route.
摘要翻译：一种气体循环处理装置，包括处理室，供气管道，气体供给管道，从处理室排出气体的第一排气机构，排出从第一排气机构排出的气体的一部分的第二排气机构设置在所述第一排气机构和所述第二排气机构之间的背压调节机构，以调节所述第一排气机构的背压;以及气体循环管道，其配置为将从所述第一排气机构排出的气体的另一部分排气机构，其具有从气体供给配管供给的处理气体，其中，所述气体供给配管的内径比所述气体供给更大，或者所述处理气体被引入到所述第一排气机构，或者设置第一加热器以加热至少部分循环路线。

15. 发明授权

US06933234B2 Method for manufacturing semiconductor device and polishing apparatus 失效
标题翻译：半导体器件和抛光装置的制造方法
公开(公告)号：US06933234B2
公开(公告)日：2005-08-23
申请号：US10303001
申请日：2002-11-25
申请人： Kenro Nakamura , Naoto Miyashita , Takashi Yoda , Katsuya Okumura
发明人： Kenro Nakamura , Naoto Miyashita , Takashi Yoda , Katsuya Okumura
IPC分类号： B24B9/00 , B24B9/06 , B24B21/00 , B24B21/06 , H01L21/304 , H01L21/321 , B24B1/00 , H01L21/302
CPC分类号： H01L21/304 , B24B9/065 , B24B21/002 , B24B21/06 , H01L21/321 , Y10S134/902
摘要： In manufacturing a semiconductor device, a part of an element is formed on the surface of a substrate, and at least a periphery of the substrate is polished using a polishing member stretched around the periphery of the substrate so that a polishing face of the polishing member is slid on a polishing target surface of the periphery.
摘要翻译：在半导体器件的制造中，元件的一部分形成在基板的表面上，并且使用在基板周围进行拉伸的研磨部件来研磨基板的至少周边，使得研磨部件的研磨面在周边的抛光对象表面上滑动。

16. 发明授权

US06812557B2 Stacked type semiconductor device 有权
公开(公告)号：US06812557B2
公开(公告)日：2004-11-02
申请号：US10673192
申请日：2003-09-30
申请人： Mie Matsuo , Takashi Yoda
发明人： Mie Matsuo , Takashi Yoda
IPC分类号： H01L2302
CPC分类号： H01L23/5382 , H01L23/544 , H01L25/0657 , H01L2223/5444 , H01L2223/54473 , H01L2223/5448 , H01L2223/54486 , H01L2224/16 , H01L2224/32145 , H01L2225/06527 , H01L2924/00014 , H01L2224/0401
摘要： Disclosed is a stacked type semiconductor device comprising a predetermined semiconductor integrated circuit chip and at least one semiconductor integrated circuit chip which are stacked, the at least one semiconductor integrated circuit chip including a group of circuit blocks, and the predetermined semiconductor integrated circuit chip comprising a storage section configured to store defect information indicative of a defective circuit block if the group includes the defective circuit block and a replacement circuit section configured to replace the defective circuit block.

17. 发明授权

US4876223A Method of manufacturing semiconductor devices 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US4876223A
公开(公告)日：1989-10-24
申请号：US260300
申请日：1988-10-20
申请人： Takashi Yoda , Tohru Watanabe
发明人： Takashi Yoda , Tohru Watanabe
IPC分类号： H01L21/306 , H01L21/311 , H01L21/3205 , H01L21/3213 , H01L21/768
CPC分类号： H01L21/31133 , H01L21/32134 , H01L21/7684 , Y10S148/051
摘要： A method of manufacturing a semiconductor device whereby a wiring material is filled within a recess of an insulating film, with the upper surface of the wiring material being uneven, a coating film being evenly deposited on the wiring material, the wiring material and the coating film being etched with tetra-methyl-guanidine having the same etching speed with respect to the wiring material and the coating film in such a manner that the upper surface of the wiring material filled within the recess is made substantially flat and substantially flush with the upper surface of the insulating film. A tetra-methyl-guanide may be used which has a higher etching speed with respect to the wiring material than the coating film. In this case, the wiring material has an indentation above the recess, and the coating film is thick above the recess and thin above the insulating film. Therefore, the wiring material within the recess is etched in such a manner that the upper surface of the wiring material within the recess is made flat and substantially flush with the upper surface of the insulating film.

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