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    • 13. 发明授权
    • Method of fabricating nitride crystal, mixture, liquid phase growth method, nitride crystal, nitride crystal powders, and vapor phase growth method
    • 氮化物晶体的制备方法,混合物,液相生长法,氮化物晶体,氮化物晶体粉末和气相生长法
    • US06270569B1
    • 2001-08-07
    • US09096458
    • 1998-06-11
    • Masatomo ShibataTakashi Furuya
    • Masatomo ShibataTakashi Furuya
    • C30B1104
    • C30B19/00C01B21/0602C01B21/0632C01B21/0722C01P2004/10C01P2004/61C01P2006/60C30B9/00C30B15/00C30B29/403C30B29/406
    • A Group III metal element is heated so as to melt, a gas NH3 containing nitrogen atoms is injected into a melt 3 of the Group III metal element at a temperature lower than the melting point of a nitride to be obtained, thereby producing a nitride microcrystal of the Group III element having high wettability with the melt 3 in the melt 3 of the Group III metal element. A mixture of the Group III nitride microcrystal obtained as mentioned above and the Group III metal element solution is used as a starting material of a liquid phase growth or Group III nitride powders obtained by removing the Group III metal material from the mixture are used as a starting material of a vapor phase growth. Further, a seed crystal or a substrate crystal is immersed in a melt of a Group III element such as gallium, bubbles of a gas containing nitrogen such as ammonia are intermittently come into contact with the surface of the crystal, and the Group III element and the gas containing nitrogen are allowed to react with each other on the surface of the seed crystal or the substrate crystal, thereby allowing the nitride crystal of the Group III element to be grown on the surface of the seed crystal or substrate crystal.
    • 将III族金属元素加热熔化,将含有氮原子的气体NH 3在低于所得氮化物的熔点的温度下注入到III族金属元素的熔体3中,从而制备氮化物微晶 的III族元素与III族金属元素的熔体3中的熔体3具有高润湿性。 使用如上所述获得的III族氮化物微晶和III族金属元素溶液的混合物作为液相生长的起始材料或通过从混合物中除去第III族金属材料获得的III族氮化物粉末作为 气相生长的原料。 此外,将种子晶体或基板晶体浸渍在诸如镓的III族元素的熔体中,包含诸如氨的氮气的气体的气泡间歇地与晶体的表面接触,并且III族元素和 允许含氮的气体在晶种或基板晶体的表面上彼此反应,从而允许III族元素的氮化物晶体生长在晶种或基板晶体的表面上。
    • 17. 发明授权
    • Pyrazinecarboxamide derivatives and plant disease controlling agents containing the same
    • 吡嗪甲酰胺衍生物和含有其的植物病害防治剂
    • US08168638B2
    • 2012-05-01
    • US12086582
    • 2006-12-21
    • Masatsugu OdaTakashi FuruyaMotohiro HasebeNobutaka Kuroki
    • Masatsugu OdaTakashi FuruyaMotohiro HasebeNobutaka Kuroki
    • A01N43/60A01P3/00C07D241/16C07D241/24
    • C07D241/24A01N43/60C07D401/12C07D403/12C07D405/12
    • The present invention provides the compounds represented by the general formula (I): [wherein X is a halogen atom or an (C1-C3)alkyl group which may be substituted with a halogen atom(s); Y is a hydrogen or halogen atom, or a cyano, a (C1-C3)alkyl or (C1-C3)alkoxy group; R is a hydrogen or halogen atom, a cyano group, or a (C1-C6)alkyl, (C2-C6)alkenyl group, (C2-C6)alkynyl, (C1-C6)alkoxy, (C2-C6)alkenyloxy, (C2-C6)alkynyloxy, (C1-C6)alkylthio, (C1-C6)alkylsulfinyl or (C1-C6)alkylsulfonyl group which may be substituted with a halogen atom(s), a (C1-C6)alkoxycarbonyl group, a (C1-C6)alkoxyimino(C1-C3)alkyl group, a tri(C1-C10)alkylsilyl group, or a phenyl, phenoxy, pyridyloxy or pyrimidyloxy group which may be substituted with a substituent(s); n is an integer of 1 to 5], which compounds cause reduced loads of deleterious, harmful effects to the earth environment, and exhibit a widened controlling spectrum at lowered chemical application rates, thereby finding useful application as a plant disease controlling agent for agricultural and horticultural uses.
    • 本发明提供由通式(I)表示的化合物:[其中X为可被卤原子取代的卤素原子或(C1-C3)烷基); Y是氢或卤原子,或氰基,(C1-C3)烷基或(C1-C3)烷氧基; (C 1 -C 6)烷基,(C 2 -C 6)烯基,(C 2 -C 6)炔基,(C 1 -C 6)烷氧基,(C 2 -C 6)烯氧基, (C 1 -C 6)烷氧基羰基,(C 1 -C 6)烷硫基,(C 1 -C 6)烷基亚磺酰基或可被卤原子取代的(C 1 -C 6)烷基磺酰基, (C1-C6)烷氧基亚氨基(C1-C3)烷基,三(C1-C10)烷基甲硅烷基,或可被取代基取代的苯基,苯氧基,吡啶氧基或嘧啶基氧基; n为1〜5的整数],这种化合物对地球环境造成有害的有害影响的负荷减少,化学施用率降低,控制谱扩大,从而有助于农业和植物病害防治剂的应用。 园艺用途。
    • 18. 发明授权
    • Random error signal generator
    • 随机误差信号发生器
    • US08095842B2
    • 2012-01-10
    • US12510423
    • 2009-07-28
    • Takashi FuruyaMasahiro KurodaHiroshi Shimotahira
    • Takashi FuruyaMasahiro KurodaHiroshi Shimotahira
    • G01R31/3183
    • G01R31/318371G01R31/31917
    • In a random error signal generator, an M-sequence generation circuit outputs, in parallel, pieces of bit data stored in each register, a first generation circuit sequentially outputs first reference values C which are changed by a predetermined value in response to clocks, a second generation circuit outputs a second reference value D which is shifted from the first reference value C by a range value E which is determined depending on an error rate p. A comparison and determination unit outputs random error signals to be error bits when a numeric value A of the bit data output exists between the first and second reference values C, D. The random error signal has the error rate p, the number of times of error occurrences follows Poisson distribution, and a distribution of adjacent error occurrence intervals follows a geometric distribution.
    • 在随机误差信号发生器中,M序列产生电路并行地输出存储在每个寄存器中的位数据,第一生成电路顺序地输出响应于时钟改变预定值的第一参考值C, 第二产生电路输出从第一参考值C偏移根据错误率p确定的范围值E的第二参考值D. 当在第一和第二参考值C,D之间存在位数据输出的数值A时,比较和确定单元输出随机误差信号为误差位。随机误差信号具有误差率p, 错误发生遵循泊松分布,相邻误差发生间隔的分布遵循几何分布。